Basic Electronics Engineering Exam
Basic Electronics Engineering Exam
testNo=5215&code=1052000&showTest=345&actForm=edit&set=1
Seat No -
Total number of questions : 60
1000531_T1 BASIC ELECTRONICS ENGINEERING
Time : 1hr
Max Marks : 50
N.B
1) All questions are Multiple Choice Questions having single correct option.
7) Use only black/blue ball point pen to darken the appropriate circle.
Q.no 1. Which of the following materials can be used to produce infrared LED?
A : Si
B : GaAs
C : CdS
D : PbS
A : Heavily doped
B : Lightly doped
C : Metallic
A : acceptor ions
B : donor ions
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C : free electrons
D : holes
A : Output
B : Input
C : Standby
D : None of these
A : NOT gate
B : NOR gate
C : AND gate
D : NAND gate
A : 2,2
B : 2.3
C : 3,2
D : 3,3
A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
A : Intrinsic semiconductor
B : Extrinsic semiconductor
C : Diffused semiconductor
B : Capacitors
C: Semiconductor devices
D : Relays
A : Voltage
B : AM signal
C : Current
D : frequency
Q.no 12. Maximum average load voltage VLdc for Full wave rectifier is given as _____
A : Vm/π
B : 2Vm/π
C : 3Vm/π
D : Vm/2π
A : 2,2
B : 2.3
C : 3,2
D : 3,3
Q.no 14. When a silicon diode is forward biased, what is VBE for a C-E configuration?
A : voltage-divider bias
B : 0.4 V
C : 0.7 V
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D : emitter voltage
Q.no 15. Number of diodes used in Bridge type Full Wave Rectifier
A : One
B : Two
C : Four
D : Three
Q.no 16. In a transistor, the base current is about ________ of emitter current.
A : 0.25
B : 0.2
C : 0.35
D : 05
Q.no 17. For a silicon P-N junction diode, the barrier potential is about
A: 0.7 V
B: 0.8 V
C: 0.9 V
D: 1.0 V
A : one pn junction
B : two pn junctions
C : three pn junctions
D : four pn junctions
Q.no 19. The logic gate which detects equality of two bits is
A : EX-OR
B : EX-NOR
C : NOR
D : NAND
A : AND
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B : OR
C : NAND
D : NOR
Q.no 21. Gain of common emitter amplifier is determine by the ratio of ac output voltage to
input
A : collector voltage
B : emitter voltage
C : base voltage
D : drain voltage
A : AC to DC
B : DC to AC
C : DC to DC
D : AC to AC
A : One
B : Two
C : Four
D : Six
A : Series
B : Parallel
C : Both A & B
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Q.no 26. Special kind of CRO which can store the waveforms in digital form is
called______________
A : ROM
B : RAM
C : DSO
D : Autotransformer
A : Sine
B : Sawtooth
C : Square
Q.no 28. The output of a logic gate is 1 when all its inputs are at logic 1, the gate is either
A : A NAND or a NOR
B : An AND or an OR
C : An OR or an X-OR
D : An AND or a NOR
A : EX-OR
B : NOR
C : NAND
D : EX-NOR
A : a.c.
B : d.c.
Q.no 31. A current ratio of IC/IE is usually less than one and is called as
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A : beta
B : theta
C : alpha
D : omega
A : logical notation
B : Arithmetic logics
C : logic gates
D : Expressions
Q.no 33. For the same excitation voltage and winding currents, the autotransformer gives
A : voltage
B : current
C : resistance
D : power
Q.no 35. Which of the following materials can be used to make a light-emitting diode?
A : Silicon
B: Germanium
C: Gallium Arsenide
D : Phosphorescent material
Q.no 36. During reverse bias in a diode , a small current develops known as______.
A : Forward current
D : Active current
Q.no 37. What is the main advantage of using a digital storage oscilloscope?
A : Low
B : High
C : Constant
A:1
B:A
C:0
D : A'
A : Four
B : Three
C : One
D : Two
A : EX-OR
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B : NOR
C : NAND
D : EX-NOR
A : Power
B : Voltage
C : Current
D : Resistance
A : 0.45
B : 0.48
C : 0.52
D : 0.82
A:3
B:4
C:5
D:6
A : It allows the passage of current in the forward bias with zero potential drop across the diode
C : It offers zero resistance in forward bias & infinity resistance in reverse bias.
A : and mathematically differentiates the average of the voltages on the two input lines
B : and differentiates the input waveform on one line when the other line is grounded
Q.no 48. In a transistor if β = 100 and collector current is 10 mA, then IE is _______
A : 10 mA
B : 10.1 mA
C : 11.0 mA
D : 11.1 mA
Q.no 50. To operate in active region, transistor's base-emitter junction must be forward
biased and ________junction is reverse bias.
A : collector-emitter
B : base-collector
C : base-emitter
D : collector-base
Q.no 52. For Bridge Wave Rectifier, Transformer Utilization Factor is given as_________
A : 0.48
B : 0.287
C : 0.6933
D : 0.81
A : voltage gain
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B : current gain
C : resistance gain
D : power gain
A : S=1,C=0
B : S=1,C=1
C : S=0,C=1
D : S=0,C=0
A : S=1,C=0
B : S=1,C=1
C : S=0,C=1
D : S=0,C=0
C : drift+diffusion current
D : No winding
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Q.no 59. The fan-out of a MOS-logic gate is higher than that of TTL gates because of its
Q.no 60. The basic difference between square wave and pulse generator is based on its____.
A : Wavform amplitude
B : Frequency Range
C : Cost
D : Duty Cycle
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Seat No -
Total number of questions : 60
1000531_T1 BASIC ELECTRONICS ENGINEERING
Time : 1hr
Max Marks : 50
N.B
1) All questions are Multiple Choice Questions having single correct option.
7) Use only black/blue ball point pen to darken the appropriate circle.
A : collector
B : emitter
C : base
D : drain
A : Lightly dopped
B : Heavily dopped
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C : Moderately dopped
D : Not dopped
Q.no 4. When a silicon diode is forward biased, what is VBE for a C-E configuration?
A : voltage-divider bias
B : 0.4 V
C : 0.7 V
D : emitter voltage
A : EX-OR
B : EX-NOR
C : NOR
D : NAND
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
Q.no 8. The forward region of a semiconductor diode characteristic curve is where diode
appears as
A : Inductor
B : An ON switch
C : An OFF switch
D : Capacitor
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A : Series
B : Parallel
C : Both A & B
A : Series
B : Parallel
C : Both A & B
A : Output
B : Input
C : Standby
D : None of these
A : collector voltage
B : emitter current
C : base current
D : emitter voltage
Q.no 13. Which of the following elements comprise of the passive devices?
A : 2,2
B : 2.3
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C : 3,2
D : 3,3
A : Heavily doped
B : Lightly doped
C : Metallic
Q.no 16. Number of diodes used in Center Tap Full Wave Rectifier
A : One
B : Two
C : Four
D : Three
A : acceptor ions
B : donor ions
C : free electrons
D : holes
Q.no 19. Compared to the two winding transformer, in an autotransformer the leakage
reactance and copper losses is
A : less, more
B : less, less
C : more, more
D : more, less
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A:0
B:3
C:2
D:1
A : More than
B : Lies between
C : Less than
D : Same as
A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
B : Capacitors
C: Semiconductor devices
D : Relays
A : free electrons
B : holes
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C : donor ions
D : acceptor ions
Q.no 26. Which of the following materials can be used to make a light-emitting diode?
A : Silicon
B: Germanium
C: Gallium Arsenide
D : Phosphorescent material
D : None of these
Q.no 28. A certain non-inverting amplifier has an R1=1KΩ and an Rf=100KΩ. The closed
loop gain is...
A : 100
B : 101
C : 10
D : 1000
A : voltage
B : current
C : resistance
D : power
Q.no 30. In a transistor if β = 100 and collector current is 10 mA, then IE is _______
A : 10 mA
B : 10.1 mA
C : 11.0 mA
D : 11.1 mA
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Q.no 31. In a P-N junction the positive voltage at which the diode starts to conduct
consequently is called.
B : Saturation voltage
C : Knee voltage
D : Breakdown voltage
A : logical notation
B : Arithmetic logics
C : logic gates
D : Expressions
Q.no 33. Which process of the Electron-hole pair is responsible for emitting of light?
A : Generation
B : Movement
C : Recombination
D : Diffusion
Q.no 34. A Zener diode utilises ………… characteristic for voltage regulation
A : Forward
B : Reverse
A : Sinusoidal
B : Square
C : Triangular
D : Saw-tooth
A:9
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B : 0.9
C : 900
D : 90
A : 0.45
B : 0.48
C : 0.52
D : 0.82
A : Low
B : High
C : Constant
A:3
B:4
C:5
D:6
B : quiescent point
C : saturation point
D : center point
Q.no 42. The point of intersection of d.c. and a.c. load lines represents .........
A : Operating point
B : Saturation point
D : Center point
Q.no 44. Output characteristics of common emitter configuration is plotted between _____
A:3
B:4
C:5
D:6
Q.no 46. The element that has the biggest size in a transistor is _______
A : Collector
B : Base
C : Emitter
A : Sine signal
B : Cosine signal
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D : Constant DC Signal
A:1
B:A
C:0
D : A'
A : IC = IE + IB
B : IB = IC + IE
C : IE = IC − IB
D : IE = IC + IB
Q.no 50. The output of a logic gate is 1 when all its inputs are at logic 0. The gate is either
A : A NAND or a NOR
B : An AND or an X-OR
C : An OR or a NAND
D : An X-OR or an X-NOR
Q.no 51. The basic difference between square wave and pulse generator is based on its____.
A : Wavform amplitude
B : Frequency Range
C : Cost
D : Duty Cycle
Q.no 52. The tendency of charge carriers to move from a region of heavily concentrated
charges to region of less concentrated charge is known as_______.
A : Depletion current
B : Drain current
C : Diffusion current
D : Saturation current
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A : UPS
C : Transformers
A : S=1,C=0
B : S=1,C=1
C : S=0,C=1
D : S=0,C=0
Q.no 55. For Center tap full Wave Rectifier, Transformer Utilization Factor is given
as_________
A : 0.48
B : 0.287
C : 0.6933
D : 0.81
A : 001
B : 004
C : 100
D : 1000
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Q.no 59. For Bridge Wave Rectifier, Transformer Utilization Factor is given as_________
A : 0.48
B : 0.287
C : 0.6933
D : 0.81
Q.no 60. Magnetic coil galvanometer can be converted into ammeter by connecting ___
resistance in _____ with it.
A : Low, Series
B : High, Series
C : High, Shunt
D : Low, Shunt
A : Amplitude
B : AM signal
C : Current
D : frequency
Q.no 3. Gain of common emitter amplifier is determine by the ratio of ac output voltage to
input
A : collector voltage
B : emitter voltage
C : base voltage
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D : drain voltage
A: Insulator
B: Superconductor
C: Intrinsic semiconductor
D: Extrinsic semiconductor
A : Voltage
B : Current
C : Resistance
C : Regulate voltage
D : Emit light
A : Germanium
B : Carbon
C : Sulphur
D : Silicon
A : One
B : Two
C : Four
D : Six
A : Commutative
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B : Associative
C : Distributive
D : Idempotence
A : AND
B : OR
C : NAND
D : NOR
Q.no 12. For a silicon P-N junction diode, the barrier potential is about
A: 0.7 V
B: 0.8 V
C: 0.9 V
D: 1.0 V
A : 2,2
B : 2.3
C : 3,2
D : 3,3
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
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A:1
B:2
C:3
D:4
A : Inphase
B : Out of phase
A : DC to AC conversion
B : AC to AC conversion
C : AC to DC conversion
D : DC to DC conversion
Q.no 18. Lower voltage level represents logic 0 and Higher voltage level represents logic 1 ,
then system is called as ________ logic system.
A : Transition
B : Negative
C : Positive
D : Dual
A : AND
B : OR
C : NAND
D : NOR
A : AC to DC
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B : DC to AC
C : DC to DC
D : AC to AC
Q.no 21. Average load current (ILdc) for Half Wave Rectifier is _______
A : Im/π
B : 2Im/π
C : Im/2π
D : 2Im
Q.no 22. Which of the following materials can be used to produce infrared LED?
A : Si
B : GaAs
C : CdS
D : PbS
Q.no 23. Maximum average load voltage VLdc for Full wave rectifier is given as _____
A : Vm/π
B : 2Vm/π
C : 3Vm/π
D : Vm/2π
A : NOR
B : NAND
C : NOT
D : AND
A : Output
B : Input
C : standby
D : None of these
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Q.no 26. _______is an electronic instrument which generate different electric signals over
given range of frequencies
A : Multimeter
B : Function Generator
C : CRO
D : Autotransformer
A : It allows the passage of current in the forward bias with zero potential drop across the diode
C : It offers zero resistance in forward bias & infinity resistance in reverse bias.
Q.no 29. Input and output signals of common emiiter amplifier are
A : Equal
B : Out of phase
C : In phase
Q.no 31. For the same excitation voltage and winding currents, the autotransformer gives
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A : EX-OR
B : NOR
C : NAND
D : EX-NOR
A : D’Arsonval principle.
B : Einstein
C : Newtons
D : None of these
A:3
B:4
C:5
D:6
Q.no 36. Special kind of CRO which can store the waveforms in digital form is
called______________
A : ROM
B : RAM
C : DSO
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D : Autotransformer
Q.no 37. To operate in active region, transistor's base-emitter junction must be forward
biased and ________junction is reverse bias.
A : collector-emitter
B : base-collector
C : base-emitter
D : collector-base
A : EX-OR
B : NOR
C : NAND
D : EX-NOR
B : NAND gates
C : NOR gates
A : Amplifiers
B : Choppers
C : Converters
D : Inverters
A : a.c.
B : d.c.
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A : Four
B : Three
C : One
D : Two
Q.no 43. What is the main advantage of using a digital storage oscilloscope?
A:A+0=0
B:A+1=1
C:A+A=1
D:A+B=1
Q.no 45. For Half Wave Rectifier, Transformer Utilization Factor is given as_________
A : 0.48
B : 0.287
C : 0.6933
D : 0.81
A : Recombination of carriers
Q.no 47. The maximum reverse voltage that can be applied to an ordinary semiconductor
diode without irreverslible damage is called
A: Cut-off voltage
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D: Zener voltage
Q.no 48. In an unclocked R-S flip-flop made of NOR gates, the forbidden input condition is
A : R = 0, S = 0
B : R = 1, S = 0
C : R = 0, S = 1
D : R = 1, S = 1
A : Constant Current
B : Constant Volatge
C : Constant frequency
D : Constant resistance
Q.no 50. A current ratio of IC/IB is usually greater than one and is called…..
A : beta
B : alpha
C : omega
D : theta
Q.no 51. A Zener voltage regulator needs to provide a constant voltage in spite of the fact that
there may be
A : Change in the load current drawn from the terminals of the regulator
C : Both A & B
Q.no 52. Magnetic coil Galvanometer can be converted into voltmeter by connecting ____
resistance in ____ with it.
A : Low, Series
B : High, Series
C : High, Shunt
D : Low, Shunt
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Q.no 54. Maximum rectification efficiency for Half Wave Rectifier is ________
A : 0.4
B : 0.6
C : 0.45
D : 0.48
Q.no 55. An Ideal voltmeter has ____ equivalent resistance & ideal ammeter has ____
equivalent resistance
A : Unity, Unity
B : Zero , Infinite
C : Infinite , Zero
D : Zero , Zero
A : voltage gain
B : current gain
C : resistance gain
D : power gain
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D : Class B amplifier
Q.no 60. The number of rows in the truth table of a 4- input gate is,
A:4
B:8
C : 12
D : 16
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Seat No -
Total number of questions : 60
1000531_T1 BASIC ELECTRONICS ENGINEERING
Time : 1hr
Max Marks : 50
N.B
1) All questions are Multiple Choice Questions having single correct option.
7) Use only black/blue ball point pen to darken the appropriate circle.
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
Q.no 2. Lower voltage level represents logic 0 and Higher voltage level represents logic 1 ,
then system is called as ________ logic system.
A : Transition
B : Negative
C : Positive
D : Dual
Q.no 4. Which of the following materials can be used to produce infrared LED?
A : Si
B : GaAs
C : CdS
D : PbS
A : Germanium
B : Carbon
C : Sulphur
D : Silicon
A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
A : Voltage
B : Current
C : Resistance
A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
Q.no 10. In a transistor, the base current is about ________ of emitter current.
A : 0.25
B : 0.2
C : 0.35
D : 05
Q.no 11. For a silicon P-N junction diode, the barrier potential is about
A: 0.7 V
B: 0.8 V
C: 0.9 V
D: 1.0 V
A : Commutative
B : Associative
C : Distributive
D : Idempotence
A : AND
B : OR
C : NAND
D : NOR
A : Series
B : Parallel
C : Both A & B
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C : Regulate voltage
D : Emit light
A : Lightly dopped
D : Not dopped
A : Voltage
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B : AM signal
C : Current
D : frequency
A : always zero
B : always one
C : always complementary
A: Insulator
B: Superconductor
C: Intrinsic semiconductor
D: Extrinsic semiconductor
Q.no 23. Compared to the two winding transformer, in an autotransformer the leakage
reactance and copper losses is
A : less, more
B : less, less
C : more, more
D : more, less
A : acceptor ions
B : donor ions
C : free electrons
D : holes
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Q.no 26. To operate in active region, transistor's base-emitter junction must be forward
biased and ________junction is reverse bias.
A : collector-emitter
B : base-collector
C : base-emitter
D : collector-base
A : Sine
B : Sawtooth
C : Square
Q.no 28. The output of a logic gate is 1 when all its inputs are at logic 0. The gate is either
A : A NAND or a NOR
B : An AND or an X-OR
C : An OR or a NAND
D : An X-OR or an X-NOR
Q.no 29. For Half Wave Rectifier, Transformer Utilization Factor is given as_________
A : 0.48
B : 0.287
C : 0.6933
D : 0.81
Q.no 30. Output characteristics of common emitter configuration is plotted between _____
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A : and mathematically differentiates the average of the voltages on the two input lines
B : and differentiates the input waveform on one line when the other line is grounded
A:3
B:4
C:5
D:6
Q.no 33. In a transistor if β = 100 and collector current is 10 mA, then IE is _______
A : 10 mA
B : 10.1 mA
C : 11.0 mA
D : 11.1 mA
A : D’Arsonval principle.
B : Einstein
C : Newtons
D : None of these
Q.no 35. The point of intersection of d.c. and a.c. load lines represents .........
A : Operating point
B : Saturation point
D : Center point
A : voltage
B : current
C : resistance
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D : power
A:1
B:A
C:0
D : A'
D : None of these
A : Sine signal
B : Cosine signal
D : Constant DC Signal
A : Power
B : Voltage
C : Current
D : Resistance
Q.no 42. _____ gives all possible combinations between input and output of logic gate.
A : Truth Table
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B : Flow Table
C : Boolean Expression
D : Excitation table
A:3
B:4
C:5
D:6
A : It allows the passage of current in the forward bias with zero potential drop across the diode
C : It offers zero resistance in forward bias & infinity resistance in reverse bias.
Q.no 45. For the same excitation voltage and winding currents, the autotransformer gives
Q.no 46. Input and output signals of common emiiter amplifier are
A : Equal
B : Out of phase
C : In phase
Q.no 48. In Volt Ampere characteristics of diode the current increases with voltage ___.
A : Exponentially
B : Equally
C : Sinusoidal
D : Unequally
Q.no 49. The element that has the biggest size in a transistor is _______
A : Collector
B : Base
C : Emitter
A : logical notation
B : Arithmetic logics
C : logic gates
D : Expressions
Q.no 51. The fan-out of a MOS-logic gate is higher than that of TTL gates because of its
A : S=1,C=0
B : S=1,C=1
C : S=0,C=1
D : S=0,C=0
A : voltage gain
B : current gain
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C : resistance gain
D : power gain
Q.no 56. Maximum rectification efficiency for Center Tap Full Wave Rectifier is ________
A : 0.28
B : 0.95
C : 0.812
D : 0.4
A : VBE
B : 2 VBE
C : 1.5 VBE
D : 3 VBE
C : drift+diffusion current
A : 001
B : 004
C : 100
D : 1000
Q.no 60. A Zener voltage regulator needs to provide a constant voltage in spite of the fact that
there may be
A : Change in the load current drawn from the terminals of the regulator
C : Both A & B
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
A : 2,2
B : 2.3
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C : 3,2
D : 3,3
Q.no 5. When a silicon diode is forward biased, what is VBE for a C-E configuration?
A : voltage-divider bias
B : 0.4 V
C : 0.7 V
D : emitter voltage
A : DC to AC conversion
B : AC to AC conversion
C : AC to DC conversion
D : DC to DC conversion
A : Intrinsic semiconductor
B : Extrinsic semiconductor
C : Diffused semiconductor
A : One
B : Two
C : Four
D : Three
A : AC to DC
B : DC to AC
C : DC to DC
D : AC to AC
Q.no 10. Inversion of single bit input to a single bit output using
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A : NOT gate
B : NOR gate
C : AND gate
D : NAND gate
A : free electrons
B : holes
C : donor ions
D : acceptor ions
A : Series
B : Parallel
C : Both A & B
A : one pn junction
B : two pn junctions
C : three pn junctions
D : four pn junctions
B : Capacitors
C: Semiconductor devices
D : Relays
A : One
B : Two
C : Four
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D : Six
Q.no 16. Gain of common emitter amplifier is determine by the ratio of ac output voltage to
input
A : collector voltage
B : emitter voltage
C : base voltage
D : drain voltage
A : Amplitude
B : AM signal
C : Current
D : frequency
A : NOR
B : NAND
C : NOT
D : AND
A : Inphase
B : Out of phase
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A:1
B:2
C:3
D:4
Q.no 22. Number of diodes used in Bridge type Full Wave Rectifier
A : One
B : Two
C : Four
D : Three
A : collector
B : emitter
C : base
D : drain
A : Heavily doped
B : Lightly doped
C : Metallic
A : collector voltage
B : emitter current
C : base current
D : emitter voltage
A : EX-OR
B : NOR
C : NAND
D : EX-NOR
A : Constant Current
B : Constant Volatge
C : Constant frequency
D : Constant resistance
A : Low
B : High
C : Constant
Q.no 31. Which of the following materials can be used to make a light-emitting diode?
A : Silicon
B: Germanium
C: Gallium Arsenide
D : Phosphorescent material
Q.no 32. The maximum reverse voltage that can be applied to an ordinary semiconductor
diode without irreverslible damage is called
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A: Cut-off voltage
D: Zener voltage
A : Four
B : Three
C : One
D : Two
B : quiescent point
C : saturation point
D : center point
A : Low
B : High
C : Constant
A : Amplifiers
B : Choppers
C : Converters
D : Inverters
Q.no 37. In a P-N junction the positive voltage at which the diode starts to conduct
consequently is called.
B : Saturation voltage
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C : Knee voltage
D : Breakdown voltage
Q.no 38. What is the main advantage of using a digital storage oscilloscope?
A : 0.45
B : 0.48
C : 0.52
D : 0.82
B : NAND gates
C : NOR gates
Q.no 41. In an unclocked R-S flip-flop made of NOR gates, the forbidden input condition is
A : R = 0, S = 0
B : R = 1, S = 0
C : R = 0, S = 1
D : R = 1, S = 1
A:A+0=0
B:A+1=1
C:A+A=1
D:A+B=1
A : EX-OR
B : NOR
C : NAND
D : EX-NOR
A:3
B:4
C:5
D:6
A : IC = IE + IB
B : IB = IC + IE
C : IE = IC − IB
D : IE = IC + IB
A : Recombination of carriers
A:3
B:4
C:5
D:6
Q.no 48. A Zener diode utilises ………… characteristic for voltage regulation
A : Forward
B : Reverse
Q.no 49. A current ratio of IC/IB is usually greater than one and is called…..
A : beta
B : alpha
C : omega
D : theta
Q.no 50. Which process of the Electron-hole pair is responsible for emitting of light?
A : Generation
B : Movement
C : Recombination
D : Diffusion
A : 0.4
B : 0.28
C : 0.48
D : 0.812
D : Class B amplifier
A : ac signal bypass
B : Bias stabilization
C : collector bias
D : Emitter bias
Q.no 55. A simple diode rectifier has ‘ripples’ in the output wave which makes it unsuitable as
a DC source. To overcome this one can use
A : S=1,C=0
B : S=1,C=1
C : S=0,C=1
D : S=0,C=0
A : Data
B : Word
C : Nibble
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Q.no 60. The tendency of charge carriers to move from a region of heavily concentrated
charges to region of less concentrated charge is known as_______.
A : Depletion current
B : Drain current
C : Diffusion current
D : Saturation current
Q.no 1. Average load current (ILdc) for Half Wave Rectifier is _______
A : Im/π
B : 2Im/π
C : Im/2π
D : 2Im
A : Commutative
B : Associative
C : Distributive
D : Idempotence
A : EX-OR
B : EX-NOR
C : NOR
D : NAND
Q.no 4. Lower voltage level represents logic 0 and Higher voltage level represents logic 1 ,
then system is called as ________ logic system.
A : Transition
B : Negative
C : Positive
D : Dual
A : Germanium
B : Carbon
C : Sulphur
D : Silicon
A : Output
B : Input
C : Standby
D : None of these
A:0
B:3
C:2
D:1
Q.no 10. Maximum average load voltage VLdc for Full wave rectifier is given as _____
A : Vm/π
B : 2Vm/π
C : 3Vm/π
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D : Vm/2π
A : Voltage
B : Current
C : Resistance
A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
Q.no 13. In a transistor, the base current is about ________ of emitter current.
A : 0.25
B : 0.2
C : 0.35
D : 05
A : Vm
B : 2Vm
C : 3Vm
D : Vm/π
A: Insulator
B: Superconductor
C: Intrinsic semiconductor
D: Extrinsic semiconductor
A : always zero
B : always one
C : always complementary
A : 2,2
B : 2.3
C : 3,2
D : 3,3
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A : Lightly dopped
B : Heavily dopped
C : Moderately dopped
D : Not dopped
Q.no 23. Which of the following materials can be used to produce infrared LED?
A : Si
B : GaAs
C : CdS
D : PbS
Q.no 24. The forward region of a semiconductor diode characteristic curve is where diode
appears as
A : Inductor
B : An ON switch
C : An OFF switch
D : Capacitor
A : Inverted
B : Active
C : Cut off
D : Saturation
Q.no 27. For the same excitation voltage and winding currents, the autotransformer gives
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A : 1.21
B : 1.12
C : 0.48
D : 0.63
Q.no 29. _____ gives all possible combinations between input and output of logic gate.
A : Truth Table
B : Flow Table
C : Boolean Expression
D : Excitation table
A : voltage
B : current
C : resistance
D : power
Q.no 31. A certain non-inverting amplifier has an R1=1KΩ and an Rf=100KΩ. The closed
loop gain is...
A : 100
B : 101
C : 10
D : 1000
Q.no 32. For Half Wave Rectifier, Transformer Utilization Factor is given as_________
A : 0.48
B : 0.287
C : 0.6933
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D : 0.81
Q.no 33. Output characteristics of common emitter configuration is plotted between _____
Q.no 34. The element that has the biggest size in a transistor is _______
A : Collector
B : Base
C : Emitter
A:3
B:4
C:5
D:6
Q.no 36. The point of intersection of d.c. and a.c. load lines represents .........
A : Operating point
B : Saturation point
D : Center point
A : logical notation
B : Arithmetic logics
C : logic gates
D : Expressions
A : a.c.
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B : d.c.
Q.no 39. A current ratio of IC/IE is usually less than one and is called as
A : beta
B : theta
C : alpha
D : omega
A : It allows the passage of current in the forward bias with zero potential drop across the diode
C : It offers zero resistance in forward bias & infinity resistance in reverse bias.
A:9
B : 0.9
C : 900
D : 90
A : 0.4
B : 0.42
C : 0.46
D : 0.48
A : Sinusoidal
B : Square
C : Triangular
D : Saw-tooth
Q.no 45. _______is an electronic instrument which generate different electric signals over
given range of frequencies
A : Multimeter
B : Function Generator
C : CRO
D : Autotransformer
Q.no 46. To operate in active region, transistor's base-emitter junction must be forward
biased and ________junction is reverse bias.
A : collector-emitter
B : base-collector
C : base-emitter
D : collector-base
A : Power
B : Voltage
C : Current
D : Resistance
Q.no 49. In an ammeter the shunt resistance usually ..... meter resistance
A : Equal to
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B : Less than
C : Greater than
D : Of any value
A:1
B:A
C:0
D : A'
Q.no 51. The basic difference between square wave and pulse generator is based on its____.
A : Wavform amplitude
B : Frequency Range
C : Cost
D : Duty Cycle
Q.no 52. The arrow in the symbol of a transistor indicates the direction of __________
A : UPS
C : Transformers
Q.no 54. Maximum rectification efficiency for Center Tap Full Wave Rectifier is ________
A : 0.28
B : 0.95
C : 0.812
D : 0.4
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Q.no 56. If a transistor operates at the middle of the dc load line, a decrease in the current
gain will move the Q point
A : down
C : up
D : no where
B : unfaithful amplification
D : No impact
Q.no 58. Maximum rectification efficiency for Half Wave Rectifier is ________
A : 0.4
B : 0.6
C : 0.45
D : 0.48
D : No winding
Q.no 60. Magnetic coil galvanometer can be converted into ammeter by connecting ___
resistance in _____ with it.
A : Low, Series
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B : High, Series
C : High, Shunt
D : Low, Shunt
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