STP10NK80ZFP

STP10NK80Z - STW10NK80Z
N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247
Zener-protected superMESHTM MOSFET

General features
Type VDSS RDS(on) ID Pw
STP10NK80Z 800V <0.90Ω 9A 160 W 3
2 3
STW10NK80Z 800V <0.90Ω 9A 160 w 1
1
2
TO-220 TO-220FP
STP10NK80ZFP 800V <0.90Ω 9A 40 W

■ Extremely high dv/dt capability

■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances TO-247
■ Very good manufacturing repeability

Description
Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STP10NK80Z P10NK80Z TO-220 Tube
STP10NK80ZFP P10NK80ZFP TO-220FP Tube
STW10NK80Z W10NK80Z TO-247 Tube

July 2006 Rev 6 1/15

www.st.com 15
Contents STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220/ TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0) 800 V

VDGR Drain-gate voltage (RGS = 20KΩ) 800 V
VGS Gate-source voltage ± 30 V

ID Drain current (continuous) at TC = 25°C 9 9(1) A

ID Drain current (continuous) at TC=100°C 6 6(1) A

IDM(2) Drain current (pulsed) 36 36(1) A

PTOT Total dissipation at TC = 25°C 160 40 W

Derating Factor 1.28 0.32 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4 KV
(3)
dv/dt Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) -- 2500 V
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX

Table 2. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-220FP TO-247

Rthj-case Thermal resistance junction-case Max 0.78 3.1 0.78 °C/W

Rthj-a Thermal resistance junction-ambient Max 62.5 50 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAS 9 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 290 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

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Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test condictions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1mA, VGS= 0 800 V
voltage

Zero gate voltage drain VDS = Max rating, 1 µA

IDSS
current (VGS = 0) VDS = Max rating @125°C 50 µA

Gate body leakage current

IGSS VGS = ±20V ±10 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V

Static drain-source on
RDS(on) VGS= 10V, ID= 4.5A 0.78 0.9 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test condictions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 4.5A 9.6 S

Ciss Input capacitance

2180 pF
Coss Output capacitance
VDS =25V, f=1 MHz, VGS=0 205 pF
Crss Reverse transfer
38 pF
capacitance

Coss eq(2). Equivalent output VGS=0, VDS =0V to 640V 105 pF

capacitance
Qg Total gate charge VDD=640V, ID = 9A 72 nC
Qgs Gate-source charge VGS =10V 12.5 nC
Qgd Gate-drain charge (see Figure 19) 37 nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical characteristics

Table 6. Switching times

Symbol Parameter Test condictions Min. Typ. Max. Unit

VDD=400 V, ID=4.5A,
td(on) Turn-on Delay Time 30 ns
RG=4.7Ω, VGS=10V
tr Rise Time 20 ns
(see Figure 20)
VDD=400 V, ID=4.5A,
td(off) Turn-off Delay Time 65 ns
RG=4.7Ω, VGS=10V
tf Fall Time 17 ns
(see Figure 20)

Table 7. Gate-source zener diode

Symbol Parameter Test condictions Min. Typ. Max. Unit

BVGSO(1) Gate-Source Breakdown Igs=±1mA

30 V
Voltage (Open Drain)

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Table 8. Source drain diode

Symbol Parameter Test condictions Min Typ. Max Unit

ISD Source-drain current 9 A

ISDM(1) Source-drain current (pulsed) 36 A

VSD(2) Forward on voltage ISD=9A, VGS=0 1.6 V

trr Reverse recovery time ISD=9A, 645 ns

Qrr Reverse recovery charge di/dt = 100A/µs, 6.4 µC
IRRM Reverse recovery current VDD=45V, Tj=150°C 20 A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP

Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical characteristics

Figure 7. Output characterisics Figure 8. Transfer characteristics

Figure 9. Transconductance Figure 10. Static drain-source on resistance

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations

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Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Figure 13. Normalized gate threshold voltage Figure 14. Normalized on resistance vs
vs temperature temperature

Figure 15. Source-drain diode forward Figure 16. Normalized BVDSS vs temperature
characteristics

Figure 17. Maximum avalanche energy vs

temperature

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Test circuit

3 Test circuit

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load

Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

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Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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Revision history STP10NK80ZFP - STP10NK80Z - STW10NK80Z

5 Revision history

Table 9. Document revision history

Date Revision Changes

08-Sep-2005 4 Complete document

10-Mar-2006 5 Inserted ecopack indication
28-Sep-2005 6 New template, no content change

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z

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