TEMPFET BTS 121A

Features
● N channel
● Logic level
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab 3
2
1

Pin 1 2 3
G D S

Type VDS ID RDS(on) Package Ordering Code

BTS 121A 100 V 22 A 0.1 Ω TO-220AB C67078-S5010-A2

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage VDS 100 V
Drain-gate voltage, RGS = 20 kΩ VDGR 100
Gate-source voltage VGS ± 10
Continuous drain current, TC = 25 °C ID 22 A
ISO drain current ID-ISO 3.5
TC = 85 °C, VDS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C ID puls 88
Short circuit current, Tj = – 55 ... + 150 °C ISC 68
Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax W
VDS ≤ 50 V / VDS ≤ 15 V 800 / 1000
Power dissipation Ptot 95
Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance K/W
Chip-case Rth JC ≤ 1.32
Chip-ambient Rth JA ≤ 75

Semiconductor Group 1 04.97

 BTS 121A

Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 100 – –
Gate threshold voltage VGS(th)
VGS = VDS, ID = 1 mA 1.5 2.0 2.5
Zero gate voltage drain current I DSS µA
VGS = 0 V, VDS = 100
Tj = 25 °C – 0.1 1.0
Tj = 125 °C – 10 100
Gate-source leakage current I GSS
VGS = ± 20 V, VDS = 0
Tj = 25 °C – 10 100 nA
Tj = 150 °C – 2 4 µA
Drain-source on-state resistance RDS(on) Ω
VGS = 4.5 V, ID = 9.5 A – 0.085 0.1

Dynamic Characteristics
Forward transconductance gfs S
VDS ≥ 2 × ID × RDS(on)max, ID = 9.5 A 8 14 –
Input capacitance Ciss pF
VGS = 0, VDS = 25 V, f = 1 MHz – 1200 1500
Output capacitance Coss
VGS = 0, VDS = 25 V, f = 1 MHz – 320 580
Reverse transfer capacitance Crss
VGS = 0, VDS = 25 V, f = 1 MHz – 160 260
Turn-on time ton, (ton = td(on) + tr) td(on) – 25 40 ns
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω tr – 110 170
Turn-off time toff, (toff = td(off) + tf) td(off) – 210 270
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω tf – 100 130

Semiconductor Group 2
 BTS 121A

Electrical Characteristics (cont’d)

at Tj = 25 °CC, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Continuous source current IS – – 19 A
Pulsed source current ISM – – 76
Diode forward on-voltage VSD V
I F = 38 A, VGS = 0 – 1.35 1.7
Reverse recovery time t rr ns
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 150 –
Reverse recovery charge Q rr µC
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 0.58 –

Temperature Sensor
Forward voltage VTS(on) V
I TS(on) = 5 mA, Tj = – 55 ... + 150 °C – 1.3 1.4
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 10
Forward current ITS(on) mA
Tj = – 55 ... + 150 °C – – 5.0
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 600
Holding current, VTS(off) = 5 V, Tj = 25 °C IH 0.05 0.1 0.5
Tj = 150 °C 0.05 0.2 0.3
Switching temperature TTS(on) °C
VTS = 5 V 150 – –
Turn-off time toff µs
VTS = 5 V, ITS(on) = 2 mA 0.5 – 2.5

Semiconductor Group 3
 BTS 121A

Examples for short-circuit protection

at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Examples Unit
1 2 –

Drain-source voltage VDS 15 30 – V

Gate-source voltage VGS 5.5 4.0 –
Short-circuit current ISC 66.7 26.7 – A
Short-circuit dissipation PSC 1000 800 – W
Response time tSC(off) ms
Tj = 25 °C, before short circuit ≤ 25 ≤ 25 –

Short-circuit protection ISC = f (VDS) Max. gate voltage VGS(SC) = f (VDS)

Parameter: VGS Parameter: Tj = – 55 ... + 150 °C
Diagram to determine ISC for Tj = – 55 ... + 150 ˚C

Semiconductor Group 4
 BTS 121A

Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance

RDS(on) = f (ID)
Parameter: VGS

Typical output characteristics ID = f (VDS) Safe operating area ID = f (VDS)

Parameter: tp = 80 µs Parameter: D = 0.01, TC = 25 °C

Semiconductor Group 5
 BTS 121A

Drain-source on-state resistance Gate threshold voltage VGS(th) = f (Tj)

RDS(on) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread)
Parameter: ID = 4.5 A, VGS = 9.5 V

Typ. transfer characteristic Typ. transconductance gfs = f (ID)

ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V
Parameter: tp = 80 µs, VDS = 25 V

Semiconductor Group 6
 BTS 121A

Continuous drain current ID = f (TC) Forward characteristics of reverse diode

Parameter: VGS ≥ 10 V IF = f (VSD)
Parameter: Tj, tp = 80 µs (spread)

Typ. gate-source leakage current Typ. capacitances C = f (VDS)

IGSS = f (TC) Parameter: VGS = 0, f = 1 MHz
Parameter: VGS = 20 V, VDS = 0

Semiconductor Group 7
 BTS 121A

Transient thermal impedance ZthJC = f (tp)

Parameter: D = tp/T

Semiconductor Group 8
 BTS 121A
Package Outlines

TO 220 AB Ordering Code TO 220 AB Ordering Code

Standard C67078-S5010-A2 SMD Version E 3045 C67078-S5010-A5

9.9
9.5 4.4
3.7 1.3
2.8

15.6
17.5
12.8

1)
9.2
1

4.6

3)
13.5
2)

0.75 0.5
1.05 2.4
2.54 2.54 GPT05155

1) punch direction, burr max. 0.04

2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05

Semiconductor Group 9
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