NJM11100 E-1917008
NJM11100 E-1917008
FEATURES
Output Voltage Setting Range 1.3V to 17V
Reference Voltage Accuracy 1.25V 1.0
Output Current 240mA (min.) 320mA (typ.)
Correspond to Low ESR capacitor (MLCC) 1.0 F: (Vo 1.4V)
Low Dropout Voltage 0.2V (typ.) @Io=200mA
Input Voltage Range 2.1V to 18V
ON/OFF Control
Reverse Current Protection Circuit
Thermal Shutdown Circuit
Over Current Protection Circuit (OCP)
Bipolar Technology
Direct Replacement to TK11100 (180 degree rotated)
Package Outline SOT-23-6-1, DFN6-H1(ESON6-H1)
■ PIN CONFIGURATION
6 5 4 1. CONTROL 1. VIN
6 5 4
2. VADJ
2. GND
3. Noise Bypass 3. VOUT
NJM11100 NJM11100 4. Noise Bypass
4. VOUT
5. GND
5. VADJ
6. VIN 1 2 3 6. CONTROL
1 2 3
Should be noted the device direction when replacing from TK11100. Exposed Pad(Rear PAD) should be connect to GND
BLOCK DIAGRAM
VIN VOUT
Reverse
CONTROL Current
Thermal
Protection
Protection
Noise
Bandgap
Reference
Bypass
VADJ
Over Current
Protection
GND
Ver.2015-02-27 -1-
NJM11100
■ ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
PARAMETER SYMBOL MAXIMUM RATING UNIT
Input Voltage VIN 0.3 to 20 V
Output Voltage VOUT 0.3 to 19 V
Control Pin Voltage VCONT 0.3 to 20 V
Output Adjust Pin Voltage VADJ 0.3 to 4 V
Noise Bypass Pin Voltage (*5) VNB 0.3 to 4 V
510(*1)
SOT-23-6
710(*2)
Power Dissipation PD mW
DFN6-H1 450(*3)
(ESON6-H1) 1200(*4)
Operating Temperature Range Topr 40 to 85 C
Storage Temperature Range Tstg 40 to 150 C
(*1): Mounted on glass epoxy board. (76.2 114.3 1.6mm: based on EIA/JDEC standard, 2Layers)
(*2): Mounted on glass epoxy board. (76.2 114.3 1.6mm: based on EIA/JDEC standard, 4Layers),internal Cu area: 74.2 74.2mm
(*3): Mounted on glass epoxy board (101.5×114.5×1.6mm: based on EIA/JEDEC standard, 2Layers FR-4, with Exposed Pad)
(*4): Mounted on glass epoxy board (101.5×114.5×1.6mm: based on EIA/JEDEC standard, 4Layers FR-4, with Exposed Pad)
(4Layers: Applying 99.5×99.5mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5)
(*5): When input voltage is less than 4V, the absolute maximum control voltage is equal to the input voltage.
■ ELECTRICAL CHARACTERISTICS
(Unless other noted, VIN=4V, R1=51k , R2=68k , CIN=0.1 F, CO=1.0 F(VO<1.4V: 2.2 F), Cp=0.01 F, Cfb=100pF, Ta=25 C)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reference Voltage Vref IO=30mA 1.0 1.25 1.0 V
Quiescent Current IQ IO=0mA, except Icont - 200 260 A
Quiescent Current
IQ(OFF) VCONT=0V - - 100 nA
at OFF-state
Ground Current IGND IO=50mA - 0.75 1.5 mA
Output Current IO VO 0.3V 240 320 - mA
Line Regulation VO/ VIN VIN= VO 1V to VO 6V, IO=30mA - - 0.10 /V
Load Regulation VO / IO IO=0 to 200mA - - 0.01 /mA
Dropout Voltage(*6) VI-O IO=200mA - 0.2 0.35 V
Control Voltage at
VCONT(ON) 1.6 - - V
ON-state
Control Voltage at
VCONT(OFF) - - 0.6 V
OFF-state
Control Current ICONT VCONT=1.6V - 3 12 A
ein=200mVrms,f=1kHz, IO=10mA,
Ripple Rejection RR - 75 - dB
VO=3V setting
Average Temperature
Coefficient of Output VO/ Ta Ta=0 C to 85 C, IO=30mA - 35 - ppm/ C
Voltage
f=10Hz to 80kHz, IO=10mA,
Output Noise Voltage VNO - 30 - Vrms
VO=3V setting
(*6):Except setting Output Voltage less than 2.1V.
-2- Ver.2015-02-27
NJM11100
POWER DISSIPATION vs. AMBIENT TEMPERATURE
1000
900
800
Pow er Dissipation PD(mW)
700
on 4 layers board
600
500
on 2 layers board
400
300
200
100
0
-50 -25 0 25 50 75 100
Temperature : Ta(⁰C)
1300
1200
1100 on 4 layers board
Power Dissipation PD(mW)
1000
900
800
700
600
500
400 on 2 layers board
300
200
100
0
-50 -25 0 25 50 75 100
Temperature : Ta(ºC)
Ver.2015-02-27 -3-
NJM11100
TEST CIRCUIT
IIN
A VIN VOUT
Cfb=100pF
R2 IOUT V VOUT
VIN NJM11100 CO=1.0 F(*6)
CIN=0.1 F (ceramic)
VADJ
ICONT Noise
A CONTROL Bypass
R1
GND
V VCONT
Cp=0.01 F
-4- Ver.2015-02-27
NJM11100
■ TYPICAL APPLICATION
1. In the case where ON/OFF Control is not required:
VADJ
Noise
CONTROL Bypass
R1
Cp=0.01 F
GND
Cfb=100pF
R2
NJM11100 1.0 F (*9)
0.1 F
VADJ
Noise
CONTROL Bypass
R1
Cp=0.01 F
GND
Ver.2015-02-27 -5-
NJM11100
* Input Capacitor CIN
Input Capacitor CIN is required to prevent oscillation and reduce power supply ripple for applications when high
power supply impedance or a long power supply line.
Therefore, use the recommended CIN value (refer to conditions of ELECTRIC CHARACTERISTIC) or larger and
should connect between GND and VIN as shortest path as possible to avoid the problem.
-6- Ver.2015-02-27
NJM11100
■CHARACTERISTICS
600
VOUT=3V
300
VOUT=1.3V
0
0 5 10 15 20
Input Voltage [V]
-50 -50
Load Regulation [mV]
-100 -100
-150 -150
@:Ta=25゜C @:Ta=25゜C
-200 VIN=2.3V
-200
VIN=4.0V
Co=2.2uF(Ceramic) Co=1.0uF(Ceramic)
R1=51kΩ R1=51kΩ
-250 R2=2kΩ -250 R2=68kΩ
Cfb=100pF Cfb=100pF
-300 -300
0 100 200 300 0 100 200 300
Output Current [mA] Output Current [mA]
-100
0.25
-150 0.20
VOUT=3V
0.15
-200 @:Ta=25゜C
VIN=18V
Co=1uF(Ceramic)
0.10
-250 R1=51kΩ
R2=640kΩ 0.05
Cfb=100pF
-300 0.00
0 100 200 300 0 100 200 300
Output Current [mA] Output Current [mA]
Ver.2015-02-27 -7-
NJM11100
CHARACTERISTICS
Io=200mA
Io=200mA
1.2 2.8
1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5
Input Voltage [V] Input Voltage [V]
CONT=VIN
17
Io=30mA
Io=0mA
16.5 Io=100mA
Io=200mA
16
16 16.5 17 17.5 18
Input Voltage [V]
14
12 2.5
10 2
@:Ta=25゜C
8 1.5
VIN=VOUT+1V
Cin=0.1uF(Ceramic)
6 R1=51kΩ
1 R2=68kΩ
4 Cfb=100pF
Io=30mA
2 0.5
0 0
0 1 2 3 4 0 0.5 1 1.5 2 2.5 3
Control Voltage [V] Control Voltage [V]
-8- Ver.2015-02-27
NJM11100
CHARACTERISTICS
8
6 VIN=18V
VOUT=17V
4
2
0
0 100 200 300
Output Current [mA]
1.4 Cfb=100pF
1.2 2.5
1 2
0.8 1.5
@:Ta=25゜C
0.6 Cin=0.1uF(Ceramic)
1 Co=1uF(Ceramic)
0.4 R1=51kΩ
0.2 0.5 R2=68kΩ
Cfb=100pF
0 0
0 100 200 300 400 500 0 100 200 300 400 500
Output Current [mA] Output Current [mA]
14
12
10
8
@:Ta=25゜C
6 Cin=0.1uF(Ceramic)
Co=1uF(Ceramic)
4 R1=51kΩ
R2=640kΩ
2 Cfb=100pF
0
0 100 200 300 400 500
Output Current [mA]
Ver.2015-02-27 -9-
NJM11100
CHARACTERISTICS
Io=100mA
60 60
Io=200mA
Io=100mA Io=200mA
40 @:Ta=25ºC 40 @:Ta=25ºC
VIN=2.3V VIN=4V
ein=200mVrms ein=200mVrms
Co=2.2uF(Ceramic) Co=1uF(Ceramic)
20 R1=51kΩ 20 R1=51kΩ
R2=2kΩ R2=68kΩ
Cfb=100pF Cfb=100pF
0 0
10 100 1k 10k
10k 100k
100k 10 100 1k
1000 10k
10000 100k
100000
Frequency [Hz] Frequency [Hz]
80 Io=0mA
Io=10mA
60
Io=100mA
40 Io=200mA @:Ta=25ºC
Io=30mA VIN=18V
ein=200mVrms
Co=1.0uF(Ceramic)
20
R1=51kΩ
R2=640kΩ
Cfb=100pF
0
10 100 1k 10k
10k 100k
100k
Frequency [Hz]
Co=4.7uF(Ceramic)
Ripple Rejection Ratio [dB]
80
60
Co=2.2uF(Ceramic)
40 @:Ta=25ºC
VIN=4V
ein=200mVrms
R1=51kΩ Co=1uF(Ceramic)
20 R2=68kΩ
Cfb=100pF
Io=10mA
0
10 100 1k 10k 100k 1M
Frequency [Hz]
- 10 - Ver.2015-02-27
NJM11100
CHARACTERISTICS
Ripple Rejection Ratio vs.Output Current Ripple Rejection Ratio vs.Output Current
VOUT=1.3V VOUT=3.0V
100 100
f=1kHz f=1kHz
Ripple Rejection Ratio [dB]
60 60 f=10kHz
f=10kHz
40 40
@:Ta=25ºC @:Ta=25ºC
20 VIN=2.3V 20 VIN=4V
ein=200mVrms ein=200mVrms
Co=1uF(Ceramic) Co=1.0uF(Ceramic)
0 0
0.001 0.1 10 1000 0.001 0.1 10 1000
Output Current [mA] Output Current [mA]
80 Co=1.0uF(Ceramic)
f=1kHz
60
f=10kHz
40
20
0
0.001 0.1 10 1000
Output Current [mA]
Ver.2015-02-27 - 11 -
NJM11100
CHARACTERISTICS
Output Noise Voltage vs.Output Current Output Noise Voltage vs.Output Current
VOUT=1.3V VOUT=3.0V
100 100
@:Ta=25゜C
@:Ta=25゜C
90 VIN=2.3V 90 VIN=4.0V
Output Noise Voltage [μVrms]
Cin=0.1uF(Ceramic)
160 Co=1.0uF(Ceramic)
R1=51kΩ
140 R2=640kΩ
Cfb=100pF
120
100
80
LPF:80Hz
60
40
20
0
0.001 0.1 10 1000
Output Current [mA]
250 Cin=1.0uF(Ceramic)
R1=51kΩ
R2=68kΩ
200 Cfb=100pF
Io=10mA
150
100
50
0
1p
1.00E-12 100p
1.00E-10 0.01μ
1.00E-08 1μ
1.00E-06
Noise Bypass Capacitance [F]
- 12 - Ver.2015-02-27
NJM11100
CHARACTERISTICS
Equivalent Serise Resistance vs.Output Current Equivalent Serise Resistance vs.Output Current
VOUT=1.3V VOUT=3.0V
100 100
Equivalent Serise Resistance [Ω]
10 10
VIN=2.3V
VIN=4V
1 1
@:Ta=25ºC @:Ta=25ºC
Cin=0.1uF(Ceramic) Cin=0.1uF(Ceramic)
0.1 Co=2.2uF(Ceramic) 0.1 Co=1.0uF(Ceramic)
R1=51kΩ R1=51kΩ
R2=2kΩ R2=68kΩ
Cfb=100pF Cfb=100pF
0.01 0.01
0.001 0.1 10 1000 0 0 10 1000
Output Current [mA] Output Current [mA]
10
@:Ta=25ºC
Cin=0.1uF(Ceramic)
Co=1.0uF(Ceramic)
0.1
R1=51kΩ
R2=640kΩ
Cfb=100pF
0.01
0.001 0.1 10 1000
Output Current [mA]
Ver.2015-02-27 - 13 -
NJM11100
CHARACTERISTICS
Cfb=100pF
Cp=0.01uF
1.26 VIN=4V
Io=30mA
1.25
1.24
1.23
1.22
-50 0 50 100 150
Ambient Temperature [ºC]
3.1 Cfb=100pF
Output Voltage [V]
Cp=0.01uF 200
VIN=4V
Io=30mA
3.0 150
@:Cin=0.1uF
Co=1.0uF
R1=51kΩ
100 R2=68kΩ
2.9 Cfb=100pF
Cp=0.01uF
50 VIN=4V
Output is open
2.8 0
-50 0 50 100 150 -50 0 50 100 150
Ambient Temperature [ºC] Ambient Temperature [ºC]
Cfb=100pF
Dropout Voltage [V]
14 Cp=0.01uF Cp=0.01uF
VIN=4V
12 0.6
10
8 0.4 IO=200mA
6
Io=200mA
4 0.2 IO=30mA
2 Io=100mA
Io=50mA
0 0
-50 0 50 100 150 -50 0 50 100 150
Ambient Temperature [ºC] Ambient Temperature [ºC]
- 14 - Ver.2015-02-27
NJM11100
CHARACTERISTICS
Cfb=100pF
4 0.8
0.6
2 0.4
0.2
0 0
-50 0 50 100 150 -50 0 50 100 150
Ambient Temperature [ºC] Ambient Temperature [ºC]
Cfb=100pF
0.04 0.07 Cp=0.01unF
VIN=4V
0.02 0.06 Io=0mA to 200mA
0 0.05
@:Cin=0.1uF
-0.02 Co=1.0uF 0.04
R1=51kΩ
-0.04 R2=68kΩ 0.03
Cfb=100pF
-0.06 Cp=0.01uF 0.02
VIN=4V to 9V
-0.08 Io=30mA 0.01
-0.1 0
-50 0 50 100 150 -50 0 50 100 150
Ambient Temperature [ºC] Ambient Temperature [ºC]
3.5
Output Peak Current [mA]
400
3
Output Voltage [V]
300 2.5
@:Cin=0.1uF
2
@:Cin=0.1uF
Co=1.0uF Co=1.0uF
200 R1=51kΩ 1.5 R1=51kΩ
R2=68kΩ R2=68kΩ
Cfb=100pF Cfb=100pF
Cp=0.01uF
1
100 Cp=0.01uF
VO=VOUTtyp)×90% VIN=4V
VIN=4V 0.5 Io=30mA
0 0
-50 0 50 100 150 -50 0 50 100 150 200
Ambient Temperature [ºC] Ambient Temperature [ºC]
Ver.2015-02-27 - 15 -
NJM11100
CHARACTERISTCS
5 0 5 0
1 -8 1 -8
Co=4.7uF
0 -10 0 Co=1uF -10
-1 -12 -1 -12
-20 0 20 40 60 80 100 120 140 160 180 -200 0 200 400 600 800 1000 1200 1400 1600 1800
Time [μs] Time [μs]
5 0 5 0
Control Voltage [V]
4 -2 4 -2
Output Voltage Output Voltage
3 Co=1uF -4 3 -4
Co=2.2uF Co=4.7uF
2 -6 2 -6
Co=2.2uF
1 -8 1 -8
Co=4.7uF
0 -10 0 -10
Co=1uF
-1 -12 -1 -12
-200 0 200 400 600 800 1000 1200 1400 1600 1800 -200 0 200 400 600 800 1000 1200 1400 1600 1800
Time [μs] Time [μs]
5 0 5 0
Control Voltage [V]
4 -2 4 -2
Output Voltage Output Voltage
3 -4 3 -4
Cp=0.01uF
Cp=0.1uF
2 -6 2 -6
Cp=0.1uF
1 -8 1 -8
Cp=0.01uF
0 -10 0 -10
-1 -12 -1 -12
-1000 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 -200 0 200 400 600 800 1000 1200 1400 1600 1800
- 16 - Ver.2015-02-27
NJM11100
CHARACTERISTICS
5 40
Output Voltage [V]
3.02
3 -4
Output Voltage
3.00
2 -6
2.98
1 -8
0 -10
-1 -12
0
-20 0 40 40 60
20 80 80 100
120 120 160
100 140 160 200
180
Time [μs]
2006 2
Output Current
1005 0
Output Current [mA]
04 -2
3 4-4
Output Voltage
2 3-6
1 2-8
0 -10
-1 -12
0
-20 0 40 40 60
20 80 80 100
120 120 160
100 140 160 200
180
Time [μs]
Ver.2015-02-27 - 17 -
NJM11100
PACKAGE OUT LINE
SOT-23-6-1
0~10°
2.9±0.2
1.9±0.2
6 5 4
+0.2
1.6 - 0.1
2.8±0.2
0.445±0.1
0.6
1 2 3
0.95
+0.1
0.13 -0.03
1.1±0.1
0.8
0.1MAX
0.4±0.1
0.1
UNIT:mm
NOTES
All linear dimensions are in millimeters.
- 18 - Ver.2015-02-27
NJM11100
DFN6-H1 (ESON6-H1)
UNIT:mm
NOTES
All linear dimensions are in millimeters.
Ver.2015-02-27 - 19 -
NJM11100
[CAUTION]
The specifications on this datasheets are only
given for information , without any guarantee as
regards either mistakes or omissions.
The application circuits in this datasheets are
described only to show representative usages of
the product and not intended for the guarantee or
permission of any right including the industrial
rights.
- 20 - Ver.2015-02-27
Mouser Electronics
Authorized Distributor