New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
PRIMARY CHARACTERISTICS accordance to WEEE 2002/96/EC
VWM 10 V to 43 V
TYPICAL APPLICATIONS
PPPM (10 x 1000 μs) 6600 W
Use in sensitive electronics protection against voltage
PPPM (10 x 10 000 μs) 5200 W transients induced by inductive load switching and lighting,
PD 8W especially for automotive load dump protection application.
IFSM 700 A
MECHANICAL DATA
TJ max. 175 °C
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
with 10/1000 μs waveform 6600
Peak pulse power dissipation PPPM W
with 10/10 000 μs waveform 5200
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD 8.0 W
Peak pulse current with 10/1000 μs waveform IPPM (1) See next table A
Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
Note
(1) Non-repetitive current pulse derated above T = 25 °C
A
Document Number: 88387 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 205
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN MAXIMUM MAXIMUM REVERSE MAX. PEAK MAXIMUM
TEST STAND-OFF
VOLTAGE REVERSE LEAKAGE PULSE CURRENT CLAMPING
DEVICE CURRENT VOLTAGE
VBR (V) LEAKAGE AT VWM AT 10/1000 μs VOLTAGE
TYPE IT VWM
AT VWM TJ = 175 °C WAVEFORM AT IPPM
MIN. MAX. (mA) (V)
ID (μA) ID (μA) (A) VC (V)
SM8S10 11.1 13.6 5.0 10.0 15 250 351 18.8
SM8S10A 11.1 12.3 5.0 10.0 15 250 388 17.0
SM8S11 12.2 14.9 5.0 11.0 10 150 328 20.1
SM8S11A 12.2 13.5 5.0 11.0 10 150 363 18.2
SM8S12 13.3 16.3 5.0 12.0 10 150 300 22.0
SM8S12A 13.3 14.7 5.0 12.0 10 150 332 19.9
SM8S13 14.4 17.6 5.0 13.0 10 150 277 23.8
SM8S13A 14.4 15.9 5.0 13.0 10 150 307 21.5
SM8S14 15.6 19.1 5.0 14.0 10 150 256 25.8
SM8S14A 15.6 17.2 5.0 14.0 10 150 284 23.2
SM8S15 16.7 20.4 5.0 15.0 10 150 245 26.9
SM8S15A 16.7 18.5 5.0 15.0 10 150 270 24.4
SM8S16 17.8 21.8 5.0 16.0 10 150 229 28.8
SM8S16A 17.8 19.7 5.0 16.0 10 150 254 26.0
SM8S17 18.9 23.1 5.0 17.0 10 150 216 30.5
SM8S17A 18.9 20.9 5.0 17.0 10 150 239 27.6
SM8S18 20.0 24.4 5.0 18.0 10 150 205 32.2
SM8S18A 20.0 22.1 5.0 18.0 10 150 226 29.2
SM8S20 22.2 27.1 5.0 20.0 10 150 184 35.8
SM8S20A 22.2 24.5 5.0 20.0 10 150 204 32.4
SM8S22 24.4 29.8 5.0 22.0 10 150 168 39.4
SM8S22A 24.4 26.9 5.0 22.0 10 150 186 35.5
SM8S24 26.7 32.6 5.0 24.0 10 150 153 43.0
SM8S24A 26.7 29.5 5.0 24.0 10 150 170 38.9
SM8S26 28.9 35.3 5.0 26.0 10 150 142 46.6
SM8S26A 28.9 31.9 5.0 26.0 10 150 157 42.1
SM8S28 31.1 38.0 5.0 28.0 10 150 132 50.1
SM8S28A 31.1 34.4 5.0 28.0 10 150 145 45.4
SM8S30 33.3 40.7 5.0 30.0 10 150 123 53.5
SM8S30A 33.3 36.8 5.0 30.0 10 150 136 48.4
SM8S33 36.7 44.9 5.0 33.0 10 150 112 59.0
SM8S33A 36.7 40.6 5.0 33.0 10 150 124 53.3
SM8S36 40.0 48.9 5.0 36.0 10 150 103 64.3
SM8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1
SM8S40 44.4 54.3 5.0 40 10 150 92.4 71.4
SM8S40A 44.4 49.1 5.0 40 10 150 102 64.5
SM8S43 47.8 58.4 5.0 43 10 150 86 76.7
SM8S43A 47.8 52.8 5.0 43 10 150 95.1 69.4
Note
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88387
206 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to case RJC 0.90 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
13" diameter plastic tape and reel,
SM8S10AHE3/2D (1) 2.605 2D 750
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0 150
tr = 10 μs TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Input Peak Pulse Current (%) Peak Value Where the Peak Current
Power Dissipation (W)
6.0 IPPM Decays to 50 % of IPPM
100
4.0 Half Value - IPP
IPPM 2
50
2.0
td
0 0
0 50 100 150 200 0 10 20 30 40
Case Temperature (°C) t - Time (ms)
Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform
6000 10 000
5000
Reverse Surge Power (W)
Load Dump Power (W)
4000
3000
2000
1000
0 1000
25 50 75 100 125 150 175 10 100
Case Temperature (°C) Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 2 - Load Dump Power Characteristics Fig. 4 - Reverse Power Capability
(10 ms Exponential Waveform)
Document Number: 88387 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 207
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
100 100 000
TJ = 25 °C
Transient Thermal Impedance (°C/W)
f = 1.0 MHz
CJ - Junction Capacitance (pF)
RθJA Vsig = 50 mVp-p
10
RθJC Measured at Zero Bias
1 10 000
0.1
Measured at Stand-Off
Voltage VWM
0.01 1000
0.01 0.1 1 10 100 10 15 20 25 30 35 40 45
t - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V)
Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7) Mounting Pad Layout
0.524 (13.3) 0.150 (3.8)
0.116 (3.0) 0.126 (3.2)
0.093 (2.4)
0.091 (2.3)
0.413 (10.5) 0.342 (8.7) 0.067 (1.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5) 0.116 (3.0)
0.374 (9.5) 0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3) 0.366 (9.3)
0.382 (9.7) Lead 1 0.343 (8.7)
0.606 (15.4)
0.197 (5.0) 0.583 (14.8)
0.185 (4.7) 0.138 (3.5)
0.098 (2.5)
0.028 (0.7)
0.016 (0.4) MIN. 0.020 (0.5)
Lead 2/Metal Heatsink 0.098 (2.5)
0.059 (1.5)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88387
208 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
