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Datasheet

The document provides specifications for the MBT3904L NPN transistor made by AiT Semiconductor Inc. It is available in the SOT-23 package. The document includes maximum ratings, thermal characteristics, electrical characteristics, typical characteristics graphs, and ordering information for the MBT3904L transistor. It provides key parameters and performance details needed for using the transistor in circuit designs.

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Jakub Pilarski
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0% found this document useful (0 votes)
97 views9 pages

Datasheet

The document provides specifications for the MBT3904L NPN transistor made by AiT Semiconductor Inc. It is available in the SOT-23 package. The document includes maximum ratings, thermal characteristics, electrical characteristics, typical characteristics graphs, and ordering information for the MBT3904L transistor. It provides key parameters and performance details needed for using the transistor in circuit designs.

Uploaded by

Jakub Pilarski
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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AiT Semiconductor Inc.

MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

DESCRIPTION FEATURES

The MBT3904L is available in SOT-23 Package.  Available in SOT-23 Package.

ORDERING INFORMATION PIN DESCRIPTION

Package Type Part Number


SOT-23 MBT3904L
Note SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -1-


AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

VCEO, Collector-Emitter Voltage 40Vdc


VCBO, Collector-Base Voltage 60Vdc
VEBO, Emitter-Base Voltage 6.0Vdc
IC, Collector Current-Continuous 200mAdc
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

Parameter Symbol Max Unit


Total Device Dissipation FR-5 Board NOTE1
TA = 25°C PD 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance Junction to Ambient RθJA 556 °C/W
Total Device Dissipation Alumina Substrate NOTE2
TA = 25°C PD 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg -55 to +150 °C
NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -2-


AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise noted

Parameter Symbol Conditions Min Max Unit


OFF CHARACTERISTICS
Collector-Emitter Breakdown
V(BR)CEO IC = 1.0mAdc 40 - Vdc
Voltage NOTE3
Collector-Base Breakdown
V(BR)CBO IC = 10μAdc 60 - Vdc
Voltage
Emitter-Base Breakdown
V(BR)EBO IE = 10μAdc 6.0 - Vdc
Voltage
Base Cutoff Current IBL VCE = 30Vdc, VEB = 3.0Vdc - 50 nAdc
Collector Cutoff Current ICEX VCE = 30Vdc, VEB = 3.0Vdc - 50 nAdc
ON CHARACTERISTICS NOTE3
IC = 0.1mAdc, VCE = 1.0Vdc 40 - -
IC = 1.0mAdc, VCE = 1.0Vdc 70 - -
DC Current Gain NOTE1 hFE IC = 10mAdc, VCE = 1.0Vdc 100 300 -
IC = 50mAdc, VCE = 1.0Vdc 60 - -
IC = 100mAdc, VCE =1.0Vdc 30 - -
Collector-Emitter Saturation IC = 10mAdc, IB = 1.0mAdc NOTE3 - 0.2
VCE(sat) Vdc
Voltage IC = 50mAdc, IB = 5.0mAdc - 0.3
Base-Emitter Saturation IC = 10mAdc, IB = 1.0mAdc 0.65 0.85
VBE(sat) Vdc
Voltage NOTE3 IC = 50mAdc, IB = 5.0mAdc - 0.95
SMALL–SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth IC = 10mAdc, VCE = 20Vdc,
fT 300 - MHz
Product f = 100MHz
Output Capacitance Cobo VCB = 5.0Vdc, IE = 0, f = 1.0MHz - 4.0 pF
Input Capacitance Cibo VBE = 0.5Vdc, IC = 0, f = 1.0MHz - 8.0 pF
VCE = 10Vdc,
Input Impedance hie 1.0 10 kΩ
IC = 1.0mAdc, f = 1.0 kHz
VCE = 10Vdc,
Voltage Feedback Ratio hre 0.5 8.0 x10 –4
IC = 1.0mAdc, f = 1.0kHz
VCE = 10Vdc, IC = 1.0mAdc,
Small-Signal Current Gain hfe 100 400 -
f = 1.0kHz
VCE = 10Vdc, IC = 1.0mAdc,
Output Admittance hoe 1.0 40 μmhos
f = 1.0kHz
VCE = 5.0Vdc, IC = 100μAdc,
Noise Figure NF - 5.0 dB
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td VCC = 3.0Vdc,VBE = -0.5Vdc - 35
ns
Rise Time tr IC = 10mAdc, IB1 = 1.0mAdc - 35
Storage Time ts VCC = 3.0Vdc, IC = 10mAdc, - 200
ns
Fall Time tf IB1 = IB2 = 1.0mAdc - 50
NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
NOTE3: Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -3-


AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

TYPICAL CHARACTERISTICS

Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit

Figure 3. Capacitance Figure 4. Charge Data

Figure 5. Turn–On Time Figure 6. Rise Time

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AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

Figure 7. Storage Time Figure 8. Fall Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS


(VCE = 5.0Vdc, TA = 25°C, Bandwidth = 1.0Hz)
Figure 9. Figure 10.

h PARAMETERS (VCE = 10Vdc, f = 1.0kHz, TA = 25°C)


Figure 11. Current Gain Figure 12. Output Admittance

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AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

Figure 15. DC Current Gain

Figure 16. Collector Saturation Region

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AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -7-


AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm)

INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -8-


AiT Semiconductor Inc. MBT3904L
www.ait-ic.com SWITCHING TRANSISTOR
NPN TRANSISTOR

IMPORTANT NOTICE

AiT Components (AiT) reserves the right to make changes to any its product, specifications, to discontinue
any integrated circuit product or service without notice, and advises its customers to obtain the latest version
of relevant information to verify, before placing orders, that the information being relied on is current.

AiT Components’ integrated circuit products are not designed, intended, authorized, or warranted to be
suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may
involve potential risks of death, personal injury, or server property, or environmental damage. In order to
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.

AiT Components assumes to no liability to customer product design or application support. AiT warrants the
performance of its products of the specifications applicable at the time of sale.

REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - -9-

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