APT8030LVFR

800V Ω
27A 0.300Ω

POWER MOS V ® FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested D

FREDFET

• Lower Leakage • Popular TO-264 Package

G
• Faster Switching
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT8030LVFR UNIT

VDSS Drain-Source Voltage 800 Volts
ID Continuous Drain Current @ TC = 25°C 27
Amps
IDM 1
Pulsed Drain Current 108
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 520 Watts
PD
Linear Derating Factor 4.16 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 27 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
27
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.300 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
1-2005

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 4 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5592 Rev B

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT8030LVFR
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V 6600 7900
Coss Output Capacitance VDS = 25V 645 900 pF
Crss Reverse Transfer Capacitance f = 1 MHz 320 480
Qg Total Gate Charge 3 VGS = 10V 340 510
Qgs Gate-Source Charge VDD = 0.5 VDSS 31 47 nC
Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 170 250
t d(on) Turn-on Delay Time VGS = 15V 16 32
tr Rise Time VDD = 0.5 VDSS 14 28
ns
t d(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 59 90
tf Fall Time RG = 0.6Ω 8 16

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 27
Amps
ISM Pulsed Source Current 1 (Body Diode) 108
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts
dv/ Peak Diode Recovery dv/ 5 18 V/ns
dt dt
Reverse Recovery Time Tj = 25°C 300
t rr ns
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 600
Reverse Recovery Charge Tj = 25°C 2.0
Q rr µC
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 6.7
Peak Recovery Current Tj = 25°C 13
IRRM Amps
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 22

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.24
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 6.86mH, R = 25Ω, Peak I = 27A
j G L
DD - VDSS, Tj - 150°C, RG = 2.0Ω,
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I - -I [Cont.], di/ = 100A/µs, V
S D dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.3
Z JC, THERMAL IMPEDANCE (°C/W)

D=0.5
0.1
0.2
0.05
0.1

0.05
Note:
0.01
PDM
1-2005

0.02 t1
0.005
0.01 t2
SINGLE PULSE
Duty Factor D = t1/t2
050-5592 Rev B

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT8030LVFR
50 50
VGS=5.5V, 6V, 7V, 10V & 15V VGS=15V

ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

VGS=10V
40 40
5V VGS=5.5V, 6V & 7V 5V

30 30

20 20
4.5V 4.5V

10 10

4V 4V
0 0
0 100 200 300 400 0 4 8 12 16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

100 1.4
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
ID, DRAIN CURRENT (AMPERES)

TJ = +25°C
80 1.3
TJ = +125°C

VDS> ID (ON) x RDS (ON)MAX.

60 250µSEC. PULSE TEST 1.2
@ <0.5 % DUTY CYCLE

VGS=10V
40 1.1
VGS=20V

TJ = +125°C
20 1.0
TJ = +25°C TJ = -55°C

0 0.9
0 2 4 6 8 0 10 20 30 40 50 60
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
30 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

25
1.10
VOLTAGE (NORMALIZED)

20
1.05

15
1.00
10

0.95
5

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

1.1
2.0

1.0
(NORMALIZED)
(NORMALIZED)

1.5

0.9
1.0
0.8
1-2005

0.5
0.7
050-5592 Rev B

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT8030LVFR
200 30,000
100 10µS

ID, DRAIN CURRENT (AMPERES)

OPERATION HERE
50 LIMITED BY RDS (ON) 100µS 10,000 Ciss

C, CAPACITANCE (pF)
5,000
10 1mS

5 Coss
10mS
1,000

1 100mS
500
TC =+25°C DC
.5 TJ =+150°C Crss
SINGLE PULSE

.1 100
1 5 10 50 100 800 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V 100
TJ =+150°C TJ =+25°C
16
VDS=250V 50
VDS=400V
12

8 10

5
4

0 1
100 200 0
300 400 500 600 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-264 Package Outline

4.60 (.181)
5.21 (.205) 19.51 (.768)
1.80 (.071) 20.50 (.807)
2.01 (.079)
3.10 (.122)
3.48 (.137)

5.79 (.228)
6.20 (.244)
Drain

25.48 (1.003)
26.49 (1.043)

2.29 (.090)
2.29 (.090) 2.69 (.106)
2.69 (.106)
19.81 (.780) Gate
21.39 (.842)
Drain
Source
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102) 2.79 (.110)
1-2005

3.00 (.118) 3.18 (.125)

5.45 (.215) BSC
2-Plcs.
050-5592 Rev B

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.