X-Ray Photoelectron Spectroscopy
(XPS)
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Outline
Basic principles
Instrumentation
Peak characteristics
Quantitative analysis
Depth profiling
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X-Ray Photoelectron Spectroscopy (XPS)
X-ray Photoelectron Spectroscopy (XPS), also known
as Electron Spectroscopy for Chemical Analysis
(ESCA), is used to determine quantitative atomic
composition and chemistry.
A sample is irradiated with monochromatic x-rays,
resulting in the emission of photoelectrons whose
energies are characteristic of the elements within the
sampling volume.
An XPS spectra is created by plotting the number of
electrons verses their binding energy.
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Historical Notes on XPS
Kai Siegbahn (b.1918): inventor of
modern-day XPS was working at
Uppsala University in Sweden in the
1950s and 1960s.
Siegbahn was a physicist, and chose
to call his method electron
spectroscopy for chemical analysis
(ESCA), because he understood the
importance of the chemical information 1918-2007
that XPS or ESCA can provide.
Siegbahn shared the Nobel Prize for
Physics (1981) for his work.
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X-ray Photoelectron Spectroscopy
Based on Einstein’s photoelectric effect.
Many materials emit electrons when light shines upon them
Core electrons with kinetic energy Ek are ejected by
incident X-rays.
EK = hν – Eb – φsp EVac
hν Eb e-
EK = kinetic energy
Eb = binding energy
h = Planck’s constant
ν = frequency of X-rays
φsp = spectrometer work function
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X-Ray Photoelectron Spectroscopy (XPS)
An x-ray beam usually comprised
of k-alpha x-rays is focused on x-ray
the sample.
The absorption of incident x-rays
results in the ejection of
electrons.
The energy of the ejected
electrons is measured by the
detector.
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X-Ray Photoelectron Spectroscopy
Released into the public domain by its author, Bvcrist at the English Wikipedia project.
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Energy of the ejected electrons
Released into the public domain by its author, Bvcrist at the English Wikipedia project.
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X-Ray Photoelectron Spectroscopy (XPS)
Each atom has a unique XPS spectra.
XPS can determine elemental composition,
stoichiometry, electrical/chemical states and examine
surface contamination.
XPS is an elemental analysis technique that is unique in
providing chemical state information of the detected
elements, such as distinguishing between sulfate and
sulfide forms of the element sulfur.
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Inelastic mean free path (λM)
When an electron with kinetic
energy E moves through a
solid matrix M, it has a 1000
λ, monolayers
probability of traveling a
100
certain distance before losing
all or part of its energy due to
10
an inelastic collision.
The average distance traveled 1
before such a collision is 1 10 100 1000
Energy, eV
known as the inelastic mean
free path λM(E).
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Inelastic mean free path (λM)
Since the energy ranges used
in XPS analysis are typically 1000
λ, monolayers
50–1200 eV, the values of λ are
very small, corresponding to 100
only a few monolayers.
10
Photoelectrons must originate
from atomic layers very close to 1
surface to be detected. 1 10 100 1000
Energy, eV
Therefore, the XPS technique is
very surface-specific.
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XPS surface analysis
What is a surface?
Surfaces
(3 atomic layers) using XPS and
angle resolved XPS (ARXPS) Ultra-thin films: 1-10 nm
Surface: ~1 nm Thin film: 10 nm to 2 µm
Ultra-thin films
(3-30 atomic layers) using XPS
and angle resolved XPS Bulk
Thin films
(3-600 atomic layers) using XPS
in combination with sputter
etching for profiling
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X-Ray Photoelectron Spectroscopy (XPS)
XPS is used to measure:
elemental composition of the surface (top 1–10 nm usually)
empirical formula of pure materials
elements that contaminate a surface
chemical or electronic state of each element in the surface
uniformity of elemental composition across the top surface (or line
profiling or mapping)
uniformity of elemental composition as a function of ion beam
etching (or depth profiling)
Electron energy analyzer
EK = hν – Eb – φsp X-ray
Photoelectron
Sample
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Outline
Basic principles
Instrumentation
Peak characteristics
Quantitative analysis
Depth profiling
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XPS instrumentation
UHV System
X-ray source
Electron analyzer Hemispherical energy analyzer
Magnetic Shield
Ion gun
Lenses for
energy Detector
X-ray adjustment
source Lenses for
analysis
area definition
Analyzer control &
Sample computer system
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XPS instrumentation
Ultra-High Vacuum System
Allows longer photoelectron path length
Ultra-high vacuum keeps surfaces clean,
preventing the contaminations to produce
X-ray signal
Pressure < 10-8 Torr Pressure (Torr)
Vacuum pumps 102
Low Vacuum
Roughing Pump 10-1
Medium Vacuum
Turbo Pump 10-4
High Vacuum
Ion Pump 10-8
Ultra-High Vacuum
10-11
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XPS instrumentation
Al Window
X-ray source
X-ray
Dual Anode X-ray source
Filament Filament
Mg Kα radiation: hν = 1253.6 eV Mg Al
Silver
Shield
Al Kα radiation: hν = 1486.6 eV substrate
Anode
Monochromated using quartz crystal 15 kV
Quartz crystal
Electron
source
X-ray
Electron beam
beam
X-ray Source XR 50
http://www.specs.de/cms/front_content.php?idcat=118
Al anode
Sample
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XPS instrumentation
Electron analyzer
Lens system to collect photoelectrons
Analyzer to filter electron energies
Detector to count electrons
Hemispherical energy analyzer
Magnetic Shield
Lenses for
energy Detector
X-ray adjustment
source Lenses for
analysis
area definition
Analyzer control &
Sample computer system
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XPS instrumentation
Ion gun
Sample cleaning
Depth profiling
Ar+ is the most widely used ion
Electron analyzer
X-ray Ar+ gun
source
e-
e- e-
e-
Sample
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Outline
Basic principles
Instrumentation
Peak characteristics
Quantitative analysis
Depth profiling
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XPS spectrum
Photoelectron peaks reflect discrete binding energies
of the electrons present in the solid
MoO3 film excited by Al Kα (1486.6 eV)
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XPS Peak: spin orbit coupling
XPS peak is originated from the photoelectrons in the core-levels
and valence band.
In the quantum mechanics, the nomenclature for a core level is nlj:
n : principle quantum number
l : orbit angular momentum quantum number
j : total angular momentum quantum number; j = l + s
s : spin angular momentum quantum number, s=±1/2
If l=0, single XPS peak
if l>0, a doublet peak-- spin orbit (l-s) coupling
0 s
n l=2 1 p
2 d
2d3/2 3 f
j=l-s
j=l+s
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XPS Peak: spin orbit coupling
Since s can be ±1/2, each level with l>0 is split into two sublevels
with an energy difference known as the spin-orbit splitting.
The degeneracy of each of these levels is 2j+1
Δ = 3.13 eV
Orbital l J Degeneracy Electron level
Mo 3d5/2 1s 0 1/2 1 1s
Mo 3d3/2 2s 0 1/2 1 2s
2p 1 1/2 2 2p1/2
2p 1 3/2 4 2p3/2
3d 2 3/2 4 3d3/2
3d 2 5/2 6 3d5/2
4f 3 5/2 6 4f5/2
4f 3 7/2 8 4f7/2
MoO3 film
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XPS Peak intensities
s orbital p orbital d orbital f orbital
1 1:2 2:3 3:4
1s 2p1/2 2p3/2 3d3/2 3d5/2 4f5/2 4f7/2
Binding Energy (eV)
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XPS energy levels
The photoelectron’s binding energy will be based on
the element’s final-state configuration.
Initial State Final State
Free
electron
Conduction band Conduction band
Fermi
level
Valence band Valence band
2p
2s
1s
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Energy lines
Photon energies,
in eV, of principle
K- and L- shell
emission lines.
X-ray data booklet, Lawrence Berkeley
National Laboratory, 3rd edition, 2009
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XPS energy: chemical shifts
When an atom makes a bond with another atom, the
valence electron density changes resulting in an
adjustment of the electrostatic potential affecting the
core electrons.
Change in the binding energies of the core electrons
cause shifts in the corresponding photoelectron peaks
EK = hν – Eb – φsp
Atom loses valence charge, BE increases
(Mo -> MoO2)
Atom gains valence charge, BE decreases
(MoO3 -> MoO2)
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XPS energy: chemical shifts
Atoms of higher positive oxidation state show a higher
binding energy
Extra coulombic interaction between the photo-
emitted electron and the ion core
Element level Compound Binding Energy
(eV)
Mo 3d5/2 Mo2C 227.8
Mo 3d5/2 Mo 228.0
Mo 3d5/2 MoO2 229.4
Mo 3d5/2 MoS2 229.4
Mo 3d5/2 MoCl3 230.0
Mo 3d5/2 MoCl4 231.0
Mo 3d5/2 MoCl5 232.2
Mo 3d5/2 MoO3 232.6
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Outline
Basic principles
Instrumentation
Peak characteristics
Quantitative analysis
Depth profiling
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Quantitative analysis
Atomic concentration of elements can be calculated:
We define sensitivity factors:
σij : Photoionization cross-section of peak j of element i
λ(KE): Inelastic mean free path length
Therefore, ni is dependent on the peak area (Iij) and sensitivity factor
Peak area
Intensity
Kinetic energy
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Quantitative analysis
Atomic sensitivity factors for X-ray sources at 54.7o
C.D. Wagner, et al, Surf. Interface Anal. 3, (1981) 211.
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Outline
Basic principles
Instrumentation
Peak characteristics
Quantitative analysis
Depth profiling
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Depth profiling
To remove surface contaminations or find elemental
distribution throughout the film thickness
Ar+ energy: 1-3 KV
Sample rotation
Start XPS spectrum Ar+ sputtering
Electron analyzer
X-ray Ar+ gun
source
Sample
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Depth profiling
Cu(In,Ga)Se2 film deposited on ITO
Elemental distribution Ga 3d analysis
Ga accumulation at the interface Formation of Ga
Cu diffusion into the ITO layer oxide at the interface
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Summary
Vacuum Range
Requires ultra high vacuum
Sample compatibility with UHV environment may be an
issue with biological samples
Sensitivity
Measures the elemental composition of the top 10 nm
Can detect all elements except H and He
Detection limits typically ~ 0.1 atomic percent
Typically the smallest analytical area ~10 µm
Material analysis
Can analyze metals, inorganic, polymers
Sample compatibility with UHV environment
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Online sources
• PNNL EMSL: www.emsl.gov
• AVS Science & Technology Society: www.avs.org
• AVS Surface Science Spectra: www.avs.org/literature.sss.aspx
• Evans Analytical Group: www.cea.com
• NIST X-ray Photoelectron Spectroscopy Database: www.srdata.nist.gov/sps/
• NIST Electron Inelastic-Mean-Free-Path Database: www.nist.gov/srd/nist71.htm
• QUASES-IMFP-TPP2M QUASES-Tougaard Inc.: www.quases.com
• Surfaces & Interfaces Section, National Physical Lab. www.npl.co.uk/npl/cmmt/sis
• XPS MultiQuant www.chemres.hu/aki/XMQpages/XMQhome.htm
• ASTM International: www.astm.org
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