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Datasheet

This document summarizes the specifications of the BC856AW-G through BC858CW-G small signal PNP transistors. The transistors are ideally suited for switching and audio frequency amplifier applications. Key specifications include: 1) Maximum power dissipation of 0.15W at 25°C case temperature. 2) Collector current rating of -0.1A continuous. 3) Collector-base voltage ratings ranging from -80V to -30V depending on the specific transistor. 4) DC current gain ranging from 125 to 800 depending on specific transistor and test conditions.

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0% found this document useful (0 votes)
47 views6 pages

Datasheet

This document summarizes the specifications of the BC856AW-G through BC858CW-G small signal PNP transistors. The transistors are ideally suited for switching and audio frequency amplifier applications. Key specifications include: 1) Maximum power dissipation of 0.15W at 25°C case temperature. 2) Collector current rating of -0.1A continuous. 3) Collector-base voltage ratings ranging from -80V to -30V depending on the specific transistor. 4) DC current gain ranging from 125 to 800 depending on specific transistor and test conditions.

Uploaded by

Lot Ux
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Small Signal Transistor

BC856AW-G Thru. BC858CW-G (PNP)


RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications SOT-323
-Power dissipation
PCM: 0.15W (@TA=25°C) 0.087 (2.20)
-Collector current 0.079 (2.00)

ICM: -0.1A 3
-Collector-base voltage 0.053(1.35)
VCBO: BC856W= -80V 0.045(1.15)

BC857W= -50V 1 2
BC858W= -30V 0.055 (1.40)
0.006 (0.15)
0.047 (1.20) 0.003 (0.08)
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C 0.039 (1.00) 0.096 (2.45)
0.085 (2.15)
0.035 (0.90)

Mechanical data
-Case: SOT-323, molded plastic. 0.004 (0.10) max
0.016 (0.40)
-Terminals: solderable per MIL-STD-750, 0.008 (0.20) 0.018 (0.46)
0.010 (0.26)
method 2026.

Circuit diagram
-1.BASE 3 Dimensions in inches and (millimeter)
-2.EMITTER
-3.COLLECTOR
1 2

Maximum Ratings (at Ta=25°C unless otherwise noted)


Parameter Symbol Value Units

BC856W-G -80
Collector-Base Voltage BC857W-G VCBO -50 V
BC858W-G -30

BC856W-G -65
Collector-Emitter Voltage BC857W-G VCEO -45 V
BC858W-G -30

Emitter-Base Voltage VEBO -5 V

Collector Current -Continuous IC -0.1 A

Collector Power Dissipation PC 150 mW

Junction Temperature TJ 150 O


C

Storage Temperature Range TSTG -65 to +150 O


C

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 1
Comchip Technology CO., LTD.
Small Signal Transistor

Electrical Characteristics (TA= 25 °C unless otherwise specified)


Parameter Symbol Test Conditions MIN MAX Units

BC856W-G -80
Collector-Base Breakdown Voltage IC = -10μA , IE=0
BC857W-G VCBO -50 V
BC858W-G -30

BC856W-G -65
Collector-Emitter Breakdown Voltage IC = -10mA , IB=0
BC857W-G VCEO -45 V
BC858W-G -30

Emitter-Base Breakdown Voltage VEBO IE = -1μA , IC=0 -5 V

Collector Cut-off Current ICBO VCB= -30V , IE=0 -15 nA

BC856AW,857AW,858AW 125 250


DC Current Gain BC856BW,857BW,858BW hFE VCE = -5V , IC= -2mA 220 475
BC857CW,858CW 420 800

Collector-Emitter Saturation Voltage VCE(sat) IC =-100mA , IB=-5mA -0.65 V

Base-Emitter Saturation Voltage VBE(sat) IC =-100mA , IB=-5mA -1.1 V

VCE=-5V , IC=-10mA
Transition Frequency fT 100 MHZ
f=100MHZ

Collector Capacitance Cob VCB =-10V , f=1MHZ 4.5 pF

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 2
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)

Fig.1- DC current gain as a function fo Fig.2- Base-Emitter Voltage as a function


collector current ;typical values. of collector current;typical values
500 -1200
BC857AW;VCE= -5V

-1000
400

-800
°C
=-55
Tamb=150°C Tamb

VBE (mV)
300
hFE

-600
5°C
b=2
Tam
200
Tamb=25°C -400
C
50 °
b=1
Tam
100 -200
Tamb=-55°C
BC857AW;VCE= -5V

0
0 3
-10-2 -10-1 -1 -10 -102
3
-10 -10-2 -10-1 -1 -10 -102 -10

IC (mA)
IC (mA)

Fig.3- Collector-emitter saturation voltage Fig.4- Base-emitter saturation voltage


as a function of collector current; as a function of collector current;
typical values. typical values
-104 -1200
BC857AW;IC/IB= 20

-1000

°C
-103 -800
Tamb
=-55
VBEsat (mV)
VCEsat (mV)

C
=25°
Tamb
-600

°C
Tamb=150°C =150
Tamb
-102 -400

-200
Tamb=25°C
BC857AW;IC/IB= 20
Tamb=-55°C
-10 0
2 3 2 3
-10-1 -1 -10 -10 -10 -10-1 -1 -10 -10 -10

IC (mA) IC (mA)

Fig.5- DC current gain as a function fo Fig.6- Base-emitter voltage as a function


collector current ;typical values. of collector current;typical values.
1000 -1200
BC857BW;VCE= -5V

-1000
800

Tamb=150°C
-800
°C
=-55
Tamb
VBE (mV)

600
-600
°C
b =2 5
Tam
hFE

400
Tamb=25°C -400
C
5 0°
b=1
Tam
200 -200
Tamb=-55°C BC857BW;VCE=-5V

0
0 3
-10-2 -10-1 -1 -10 -102
3
-10 -10-2 -10-1 -1 -10 -102 -10

IC (mA)
IC (mA)

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 3
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)

Fig.7- Collector-ernitter saturation voltage Fig.8- Base-Emitter Saturation Voltage as


as a function of collector current a function of collector current;typical
typical values. values
-104 -1200
BC857BW;IC/IB= 20

-1000

°C
-103 -800
Tamb
=-55
VCEsat (mV)

VBEsat (mV)
C
=25°
Tamb
-600

°C
Tamb=150°C =150
Tamb
-102 -400

-200
Tamb=25°C
BC857BW;IC/IB= 20
Tamb=-55°C
-10 0
2 3 2 3
-10-1 -1 -10 -10 -10 -10-1 -1 -10 -10 -10

IC (mA) IC (mA)

Fig.9- DC current gain as a function fo Fig.10- Base-Emitter Voltage as a function


collector current ;typical values. of collector current;typical values
1000 -1200
BC857CW;VCE= -5V

-1000
800 Tam
b =150
°C

-800
°C
=-55
Tamb
VBE (mV)

600
hFE

-600
°C
b =25
Tam
400
Tamb=25°C -400
C
5 0°
b =1
Tam
Tamb=-55°C
200 -200
BC857CW;VCE= -5V

0
0 3
-10-2 -10-1 -1 -10 -102
3
-10 -10-2 -10-1 -1 -10 -102 -10

IC (mA)
IC (mA)

Fig.11- Collector-ernitter saturation voltage Fig.12- Base-Emitter Saturation Voltage as


as a function of collector current; a function of collector current;typical
typical values. values
-104 -1200
BC857CW;IC/IB= 20

-1000

°C
-103 -800
Tamb
=-55
VCEsat (mV)

VBEsat (mV)

C
=25°
Tamb
-600

°C
Tamb=25°C =150
Tamb=150°C Tamb
-102 -400

-200
Tamb=-55°C BC857CW;IC/IB= 20

-10 0
2 3 2 3
-10-1 -1 -10 -10 -10 -10-1 -1 -10 -10 -10

IC (mA) IC (mA)

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 4
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification

P0 d
T
P1 E
Index hole

F
W
B

C
P A
12
0
o

D2 D1 D

W1

Trailer Device Leader

....... ....... ....... .......


End ....... ....... ....... ....... Start

10 pitches (min) 10 pitches (min)

Direction of Feed

SYMBOL A B C d D D1 D2
SOT-323 (mm) 2.25 ± 0.10 2.55 ± 0.10 1.19 ± 0.10 1.55 + 0.10 178 ± 1.00 54.40 ± 0.40 13.0 ± 0.20

(inch) 0.089 ± 0.004 0.100 ± 0.004 0.047 ± 0.004 0.061 + 0.004 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.008

SYMBOL E F P P0 P1 W W1
SOT-323 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00

(inch) 0.069 ± 0.004 0.138± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 5
Comchip Technology CO., LTD.
Small Signal Transistor

Marking Code
3
Part Number Marking Code

BC856AW-G 3A XX
BC857AW-G 3E 1 2
BC858AW-G 3J
xx = Product type marking code
BC856BW-G 3B

BC857BW-G 3F

BC858BW-G 3K

BC857CW-G 3G

BC858CW-G 3L

Suggested PAD Layout

SOT-323
SIZE A
(mm) (inch)

A 0.80 0.031
C D
B 1.30 0.051

C 1.94 0.076

B
D 2.74 0.108

Standard Packaging
REEL PACK
Case Type REEL Reel Size
( pcs ) (inch)

SOT-323 3,000 7

Company reserves the right to improve product design , functions and reliability without notice. REV:B

QW-BTR36 Page 6
Comchip Technology CO., LTD.

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