ECX10N20
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet
Designed specifically for linear audio amplifier applications
High-speed for high bandwidth amplifiers
Reduced Vds sat
High voltage rating - 200V
TO-247 plastic package
Enhanced oscillation suppression in multi-device applications
Complementary P-channel available – ECX10P20
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDSS Drain – Source Voltage 200V
VGSS Gate – Source Voltage +/-14V
ID Continuous Drain Current 8A
I DR Body Drain Diode Current 8A
PD Allowable Power Dissipation* Tcase = 25°C 125W
Tch Channel Temperature 150°C
Tstg Storage Temperature Range -55 to +150°C
*Thermal Resistance, Junction To Case 1.0°C/W
Exicon products are available at www.profusionplc.com
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543700 Rev 3.2
ECX10N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ Max. Units
BVDSX Drain-Source VGS = 10V ID = 10mA 200 V
Breakdown Voltage
V GS(off ) Gate-Source Cut-off VDS = 10V I D = 100mA 0.15 1.5 V
Voltage
VDS(sat)* Drain-Source Saturation VGD = 0 ID = 8A 10 V
Voltage
|yfs|* Forward Transfer V DS= 10V IDS = 3A 0.7 2 S( )
Admittance
IDSX Drain-Source Cut-Off V GS = 10V V DS = 200V 10 mA
Current
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Symbols Parameters Test Conditions Min. Typ Max. Units
C iss Input Capacitance 500 pF
VGS = 0
Coss Output Capacitance 300 pF
VDS = 10V
Crss Reverse Transfer f = 1.0MHz 10 pF
Capacitance
t on Turn-On Time VDS = 20V 100 ns
t off Turn-Off Time ID = 7A 50 ns
Exicon products are available at www.profusionplc.com
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www.exicon.info Tel: +44 (0)1702 543500 Fax:
Fax:+44
+44(0)1702
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543700 Rev 3.2
ECX10N20
GENERAL CHARACTERISTICS (T = 25°C unless otherwise stated)
Typical Output Characteristics Typical Output Characteristics
12 9
Pch = 125W 8 Vgs = 8V
10 VGS = 8V Vgs = 7V
VGS = 7V 7 Vgs = 6V
8 VGS = 6V 6
Drain Current (A)
Vgs = 5V
Drain Current (A)
5
6 VGS = 5V Vgs = 4V
4
VGS = 4V
4 3 Vgs = 3V
VGS = 3V 2
2 VGS = 2V Vgs = 2V
1 Vgs = 1V
VGS = 1V
0 0
0 20 40 60 80 0 5 10 15
VDS (V) VDS (V)
Transfer Characteristic Transfer Characteristic
12 0.300 +25°C
-25°C
10 0.250
25°C
Drain Current (A)
8 +75°C 0.200
Drain current (A)
6 0.150
4 0.100
0.050
2
0.000
0
0 0.5 1 1.5
0 5 10 15
Gate - Source Voltage (V) Gate - Source Voltage (V)
Drain - Source Voltage Transconductance
vs Gate - Source Voltage
18 10
16
Drain - Source Voltage (V)
14
Transconductance (s)
12
10 VDS = 20V
1
8
6 ID = 6A
4
ID = 3A
2
ID = 1A
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Gate - Source Voltage (V) ID Drain Current (A)
Exicon products are available at www.profusionplc.com
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Fax:+44
+44(0)1702
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543700 Rev 3.2
ECX10N20
Safe Operating Area Typical Capacitance VDS = 10
vs Gate Source Voltage f = 1 Mhz
800
10
700
Typical Capacitance (pF)
CISS
600
Drain Current (A)
1 500
400
COSS
300
0.1
200
200V
100
CRSS
0.01 0
1 10 100 1000 0 5 10
Drain - Source Voltage (V) Gate Source Voltage (-VGS V)
4.69 (0.185) 15.49 (0.610)
5.31 (0.209) 16.26 (0.640)
1.49 (0.059)
2.49 (0.098)
5.38 (0.212)
(0.242)
BSC
6.15
6.20 (0.244)
21.46 (0.845)
20.80 (0.819)
3.55 (0.140)
2 3.81 (0.150)
1 2 3
(0.177)
MAX
4.50
2.87 (0.113)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
3.12 (0.123)
0.79 (0.031)
1.65 (0.065)
2.13 (0.084)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087) 5.45 (0.215)
2.59 (0.102) BSC
1. GATE
2. SOURCE
3. DRAIN
MECHANICAL DATA dimensions in mm (inches)
Exicon products are available at www.profusionplc.com
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4
www.exicon.info Tel: +44 (0)1702 543500 Fax:
Fax:+44
+44(0)1702
(0)1702543700
543700 Rev 3.2