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ECX10N20 N-Channel MOSFET Specs

This document provides information about an N-channel lateral MOSFET transistor: - It is designed specifically for linear audio amplifier applications requiring high bandwidth. - Key specifications include a maximum drain-source voltage of 200V, continuous drain current of 8A, and power dissipation of 125W. - Electrical characteristics include a drain-source saturation voltage below 10V, forward transfer admittance between 0.7-2 mS, and turn-on/off times below 100/50ns.

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0% found this document useful (0 votes)
156 views4 pages

ECX10N20 N-Channel MOSFET Specs

This document provides information about an N-channel lateral MOSFET transistor: - It is designed specifically for linear audio amplifier applications requiring high bandwidth. - Key specifications include a maximum drain-source voltage of 200V, continuous drain current of 8A, and power dissipation of 125W. - Electrical characteristics include a drain-source saturation voltage below 10V, forward transfer admittance between 0.7-2 mS, and turn-on/off times below 100/50ns.

Uploaded by

Asad Ahmed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECX10N20

N CHANNEL LATERAL MOSFET

N Channel Lateral Mosfet


Designed specifically for linear audio amplifier applications

High-speed for high bandwidth amplifiers

Reduced Vds sat

High voltage rating - 200V

TO-247 plastic package

Enhanced oscillation suppression in multi-device applications

Complementary P-channel available – ECX10P20

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


VDSS Drain – Source Voltage 200V
VGSS Gate – Source Voltage +/-14V
ID Continuous Drain Current 8A
I DR Body Drain Diode Current 8A
PD Allowable Power Dissipation* Tcase = 25°C 125W
Tch Channel Temperature 150°C
Tstg Storage Temperature Range -55 to +150°C

*Thermal Resistance, Junction To Case 1.0°C/W

Exicon products are available at www.profusionplc.com


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ECX10N20

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols Parameters Test Conditions Min. Typ Max. Units


BVDSX Drain-Source VGS = 10V      ID = 10mA 200 V
Breakdown Voltage

V GS(off ) Gate-Source Cut-off VDS = 10V I D = 100mA 0.15 1.5 V


Voltage
VDS(sat)* Drain-Source Saturation VGD  = 0 ID = 8A 10 V
Voltage
|yfs|* Forward Transfer V DS= 10V IDS = 3A 0.7 2 S( )
Admittance
IDSX Drain-Source Cut-Off V GS = 10V V DS = 200V 10 mA
Current
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%

DYNAMIC CHARACTERISTICS

Symbols Parameters Test Conditions Min. Typ Max. Units

C iss Input Capacitance 500 pF


VGS = 0
Coss Output Capacitance 300 pF
VDS = 10V
Crss Reverse Transfer f = 1.0MHz 10 pF
Capacitance

t on Turn-On Time VDS = 20V 100 ns

t off Turn-Off Time ID = 7A 50 ns

Exicon products are available at www.profusionplc.com


1
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www.exicon.info Tel: +44 (0)1702 543500 Fax:
Fax:+44
+44(0)1702
(0)1702543700
543700 Rev 3.2
ECX10N20

GENERAL CHARACTERISTICS (T = 25°C unless otherwise stated)


Typical Output Characteristics Typical Output Characteristics

12 9
Pch = 125W 8 Vgs = 8V
10 VGS = 8V Vgs = 7V
VGS = 7V 7 Vgs = 6V
8 VGS = 6V 6

Drain Current (A)


Vgs = 5V
Drain Current (A)

5
6 VGS = 5V Vgs = 4V
4
VGS = 4V
4 3 Vgs = 3V
VGS = 3V 2
2 VGS = 2V Vgs = 2V
1 Vgs = 1V
VGS = 1V
0 0

0 20 40 60 80 0 5 10 15
VDS (V) VDS (V)

Transfer Characteristic Transfer Characteristic


12 0.300 +25°C
-25°C
10 0.250
25°C
Drain Current (A)

8 +75°C 0.200
Drain current (A)

6 0.150

4 0.100

0.050
2
0.000
0
0 0.5 1 1.5
0 5 10 15
Gate - Source Voltage (V) Gate - Source Voltage (V)

Drain - Source Voltage Transconductance


vs Gate - Source Voltage
18 10
16
Drain - Source Voltage (V)

14
Transconductance (s)

12
10 VDS = 20V
1
8
6 ID = 6A
4
ID = 3A
2
ID = 1A
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Gate - Source Voltage (V) ID Drain Current (A)

Exicon products are available at www.profusionplc.com


3
1
www.exicon.info Tel: +44 (0)1702 543500 Fax:
Fax:+44
+44(0)1702
(0)1702543700
543700 Rev 3.2
ECX10N20

Safe Operating Area Typical Capacitance VDS = 10


vs Gate Source Voltage f = 1 Mhz

800
10
700

Typical Capacitance (pF)


CISS
600
Drain Current (A)

1 500
400
COSS
300
0.1
200
200V
100
CRSS
0.01 0
1 10 100 1000 0 5 10
Drain - Source Voltage (V) Gate Source Voltage (-VGS V)

4.69 (0.185) 15.49 (0.610)


5.31 (0.209) 16.26 (0.640)
1.49 (0.059)
2.49 (0.098)

5.38 (0.212)
(0.242)
BSC
6.15

6.20 (0.244)
21.46 (0.845)
20.80 (0.819)

3.55 (0.140)
2 3.81 (0.150)

1 2 3
(0.177)
MAX
4.50

2.87 (0.113)
19.81 (0.780)
20.32 (0.800)

0.40 (0.016)
3.12 (0.123)
0.79 (0.031)
1.65 (0.065)
2.13 (0.084)
1.01 (0.040)
1.40 (0.055)

2.21 (0.087) 5.45 (0.215)


2.59 (0.102) BSC
1. GATE
2. SOURCE
3. DRAIN

MECHANICAL DATA dimensions in mm (inches)

Exicon products are available at www.profusionplc.com


1
4
www.exicon.info Tel: +44 (0)1702 543500 Fax:
Fax:+44
+44(0)1702
(0)1702543700
543700 Rev 3.2

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