HN4B101J

TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

HN4B101J
MOS Gate Drive Applications
Unit: mm
Switching Applications 　　+0.2
2.8 -0.3
　　+0.2
1.6 -0.1
• Small footprint due to a small and thin package
• High DC current gain : hFE = 200 to 500 (IC = −0.12 A) 1 5

0.95

0.4±0.1
2.9±0.2

1.9±0.2
• Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)
2

0.95
: NPN VCE (sat) = 0.17 V (max) 4
• High-speed switching : PNP tf = 45 ns (typ.)
3
: NPN tf = 50 ns (typ.)

0.16 -0.06
　　　+0.1
　　+0.2
1.1 -0.1
Absolute Maximum Ratings (Ta = 25°C)

0~0.1
Rating
1. Base (PNP)
Characteristic Symbol Unit
2. Emitter (PNP/NPN)
PNP NPN 3. Base (NPN)
4. Collector (NPN)
Collector-base voltage VCBO −30 50 V 5. Collector (PNP)

Collector-emitter voltage VCEO −30 30 V

JEDEC ―
Emitter-base voltage VEBO −7 7 V
JEITA ―
DC (Note 1) IC −1.0 1.2
Collector current A
Pulse (Note 1) ICP −5.0 5.0 TOSHIBA 2-3L1A

Base current IB −120 120 mA Weight: 0.014g (typ.)

Collector power Single-device

PC (Note 2) 0.85 W
dissipation (t = 10 s) operation

Collector power Single-device

PC (Note 2) 0.55 W
dissipation (DC) operation

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Start of commercial production

2004-10
1 2013-11-01
 HN4B101J
Figure 1. Circuit Configuration (top view) Figure 2. Marking
5　　　 　 4

PNP NPN

Part No.
(or abbreviation code)
5　K
1　 2　 　 3
Electrical Characteristics (Ta = 25°C)
PNP

Characteristic Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −30 V, IE = 0 ⎯ ⎯ −100 nA

Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −30 ⎯ ⎯ V
hFE (1) VCE = −2 V, IC = −0.12 A 200 ⎯ 500
DC current gain
hFE (2) VCE = −2 V, IC = −0.4 A 125 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) IC = −0.4 A, IB = −13 mA ⎯ ⎯ −0.20 V
Base-emitter saturation voltage VBE (sat) IC = −0.4 A, IB = −13 mA ⎯ ⎯ −1.10 V
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1MHz ⎯ 7.8 ⎯ pF
Rise time tr ⎯ 40 ⎯
See Figure 3 circuit diagram
Switching time Storage time tstg VCC ∼− −16 V, RL = 40 Ω ⎯ 200 ⎯ ns
−IB1 = IB2 = 13 mA
Fall time tf ⎯ 45 ⎯

NPN

Characteristic Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA

Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V
hFE (1) VCE = 2 V, IC = 0.12 A 200 ⎯ 500
DC current gain
hFE (2) VCE = 2 V, IC = 0.4 A 125 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) IC = 0.4 A, IB = 13 mA ⎯ ⎯ 0.17 V
Base-emitter saturation voltage VBE (sat) IC = 0.4 A, IB = 13 mA ⎯ ⎯ 1.10 V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ⎯ 7.0 ⎯ pF
Rise time tr ⎯ 45 ⎯
See Figure 4 circuit diagram
Switching time Storage time tstg VCC ∼− 16 V, RL = 40 Ω ⎯ 450 ⎯ ns
IB1 = −IB2 = 13 mA
Fall time tf ⎯ 50 ⎯

Figure 3. Switching Time Test Circuit & Timing Chart Figure 4. Switching Time Test Circuit & Timing Chart

20μs 20μs VCC

Output
IB1 RL
IB1
I B2 Input Output
RL

IB2 IB1
IB1 Input

I B2 VCC Duty cycle ＜1%

IB2
Duty cycle ＜1%

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 HN4B101J
PNP

IC – VCE hFE – IC
1.0 1000
−20 −10 −8 −6
−5
Ta = 100°C
−4
(A)

0.8

hFE
−3 25°C
−IC

0.6 −55°C

DC current gain
−2
Collector current

100

0.4 IB = −1 mA

Common emitter
0.2 Common emitter
VCE = −2 V
Ta = 25°C Single nonrepetitive pulse
Single nonrepetitive pulse 10
0 0.001 0.01 0.1 1
0 −1 −2 −3 −4 −5
Collector current −IC (A)
Collector−emitter voltage −VCE (V)

VCE (sat) – IC VBE (sat) – IC

1 10
Common emitter Common emitter
Collector−emitter saturation voltage

β = 30 β = 30
Base−emitter saturation voltage

Single nonrepetitive pulse Single nonrepetitive pulse

0.1
−VBE (sat) (V)
−VCE (sat) (V)

Ta = 100°C
Ta = −55°C
1
−55°C
25°C 100°C
0.01
25°C

0.001 0.1
0.001 0.01 0.1 1 0.001 0.01 0.1 1

Collector current −IC (A) Collector current −IC (A)

Safe operating area

10
IC max (pulse) * 100 μs*
IC – VBE 10 μs*
1.0
Common emitter IC max (pulse) * 10 ms* 1 ms*
(A)

VCE = −2 V
Single nonrepetitive IC max (continuous)*
(A)

0.8 1
−IC

pulse
DC operation
−IC

Ta = 25°C
Collector current

0.6
Ta = 100°C −55°C *: Single nonrepetitive pulse
Collector current

Ta = 25°C
Note that the curves for 100 ms,
0.4 0.1 10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
25°C (glass-epoxy, 1.6 mm thick, Cu
2
area: 645 mm ).
VCEO max

0.2 Single-device operation

These characteristic curves must 100 ms*
be derated linearly with increase
in temperature. 10 s*
0 0.01
0 0.4 0.8 1.2 1.6 0.1 1 10 100

Base−emitter voltage −VBE (V) Collector−emitter voltage −VCE (V)

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 HN4B101J
NPN

IC – VCE hFE – IC
1.2 1000
10 8 6
5
Ta = 100°C
1.0
(A)

hFE
25°C
IC

0.8 3

DC current gain
−55°C
Collector current

0.6 100
2

0.4
IB = 1 mA

Common emitter
0.2 Common emitter
VCE = 2 V
Ta = 25°C
Single nonrepetitive pulse
Single nonrepetitive pulse 10
0 0.001 0.01 0.1 1 10
0 1 2 3 4 5
Collector current IC (A)
Collector−emitter voltage VCE (V)

VCE (sat) – IC VBE (sat) – IC

1 10
Common emitter Common emitter
Collector−emitter saturation voltage

β = 30 β = 30
Base−emitter saturation voltage

Single nonrepetitive pulse Single nonrepetitive pulse

VBE (sat) (V)
VCE (sat) (V)

0.1 1 Ta = −55°C

Ta = 100°C −55°C 100°C

25°C

25°C

0.01 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1

Collector current IC (A) Collector current IC (A)

Safe operating area

10
IC max (pulse) * 100 μs* 10 μs*
IC – VBE
1.2
Common emitter IC max (pulse) * 10 ms* 1 ms*
VCE = 2 V
(A)

1.0 IC max (continuous)*

Single nonrepetitive
(A)

pulse 1
IC

DC operation
IC

0.8
Ta = 25°C
Collector current
Collector current

*: Single nonrepetitive pulse

Ta = 100°C −55°C Ta = 25°C
0.6
Note that the curves for 100 ms,
10 s and DC operation will be
0.1 different when the devices aren’t
0.4 25°C mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu
area: 645 mm2).
VCEO max

Single-device operation
0.2
These characteristic curves must 100 ms*
be derated linearly with increase
in temperature. 10 s*
0 0.01
0 0.4 0.8 1.2 1.6 0.1 1 10 100

Base−emitter voltage VBE (V) Collector−emitter voltage VCE (V)

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 HN4B101J
Common

rth – tw
1000
Transient thermal resistance
rth(j-a) (°C/W)

100

10

Curves apply only to limited areas of thermal resistance.

Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)

1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Permissible Power Dissipation for

Simultaneous Operation
0.7
DC operation
Permissible power dissipation for Q2

Ta = 25°C
0.6 Mounted on an FR4 board (glass-epoxy; 1.6
mm thick; Cu area, 645 mm2)
0.5

0.4
Pc (W)

0.3

0.2

0.1

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Permissible power dissipation for Q1

PC (W)
Collector power dissipation at single-device operation is
0.55 W.
Collector power dissipation at single-device value at
dual operation is 0.31 W.
Collector power dissipation at dual operation is set to
0.62 W.

5 2013-11-01
 HN4B101J

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

6 2013-11-01
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