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High-Current PNP Transistor 2SA2210

This document provides specifications for the 2SA2210 PNP epitaxial planar silicon transistor made by Sanyo Semiconductors. It is intended for high-current switching applications such as relay drivers, lamp drivers, and motor drivers. The transistor has a low collector-to-emitter saturation voltage, high-speed switching capabilities, and can handle currents up to -20A continuously and -25A pulsed. The document provides maximum ratings, package dimensions, electrical characteristics, and ordering information for the 2SA2210.

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0% found this document useful (0 votes)
75 views7 pages

High-Current PNP Transistor 2SA2210

This document provides specifications for the 2SA2210 PNP epitaxial planar silicon transistor made by Sanyo Semiconductors. It is intended for high-current switching applications such as relay drivers, lamp drivers, and motor drivers. The transistor has a low collector-to-emitter saturation voltage, high-speed switching capabilities, and can handle currents up to -20A continuously and -25A pulsed. The document provides maximum ratings, package dimensions, electrical characteristics, and ordering information for the 2SA2210.

Uploaded by

marcos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Ordering number : ENA0667B 2SA2210

SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor

2SA2210 High-Current Switching Applications

Applications
• Relay drivers, lamp drivers, motor drivers.

Features
• Adoption of MBIT processes • Large current capacitance
• Low collector-to-emitter saturation voltage • High-speed switching

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --50 V
Collector-to-Emitter Voltage VCEO --50 V
Emitter-to-Base Voltage VEBO --6 V
Collector Current IC --20 A
Collector Current (Pulse) ICP --25 A
Base Current IB --3 A
2 W
Collector Dissipation PC
Tc=25°C 30 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Package Dimensions Product & Package Information


unit : mm (typ) • Package : TO-220F-3SG
7529-002 • JEITA, JEDEC : SC-67
• Minimum Packing Quantity
10.16 4.7
2SA2210-1E : 50 pcs./magazine
3.18 2.54

Marking Electrical Connection


3.3

6.68

2
15.87

A
15.8

3.23

1
A2210
2.76 LOT No.
3
12.98

1.47 MAX
0.8 DETAIL-A
(0.84)

1 2 3
0.5 1 : Base
FRAME
2 : Collector
EMC
3 : Emitter
( 1.0)

2.54 2.54 SANYO : TO-220F-3SG

http://semicon.sanyo.com/en/network
60612 TKIM/21512 TKIM TC-00002708/30707FA TI IM TC-00000565 No. A0667-1/7
2SA2210

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB= --40V, IE=0A --10 μA
Emitter Cutoff Current IEBO VEB= --4V, IC=0A --10 μA
DC Current Gain hFE VCE= --2V, IC= --1A 150 450
Gain-Bandwidth Product fT VCE= --10V, IC= --1A 140 MHz
Output Capacitance Cob VCB= --10V, f=1MHz 215 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC= --7A, IB= --350mA --200 --500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= --7A, IB= --350mA --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC= --100μA, IE=0A --50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --100μA, IC=0A --6 V
Turn-On Time ton 60 ns
Storage Time tstg See specified Test Circuit 270 ns
Fall Time tf 20 ns

Switching Time Test Circuit

PW=20μs IB1
D.C.≤1%
IB2 OUTPUT
INPUT

VR RB
RL
50Ω + +
100μF 470μF

VBE=5V VCC= --20V

IC=20IB1= --20IB2= --7A

Ordering Information
Device Package Shipping memo
2SA2210-1E TO-220F-3SG 50pcs./magazine Pb Free

No. A0667-2/7
2SA2210
IC -- VCE IC -- VCE
--20 --10

A
mA

0mA
mA --10
0

0m
0
--18 --30 --9
--80m
A

--70

--20
0mA
A
--200m

A
--16 --8
--60mA

Collector Current, IC -- A
Collector Current, IC -- A

0m

00m --30
--14 A --80 --7
0 mA

A
--40
--12 mA --100mA --6 --40mA
0
A 00m

--50

0mA --4
--10 0 mA --5
--120mA
00m --9

0
--6
--8 --4
--160mA 40mA
--1

--50
--180mA --20mA
--10

--6 --3

--4 --2

--2 --1
IB=0mA IB=0mA
0 0
0 --0.5 --1.0 --1.5 --2.0 0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE -- V IT12019 Collector-to-Emitter Voltage, VCE -- V IT12020
IC -- VBE hFE -- IC
--30 1000
VCE= --2V VCE= --2V
7

--25 5
Collector Current, IC -- A

3
Ta=75°C

DC Current Gain, hFE


--20 25°C
2
--25°C
--15 100

--10 5
°C

C
75

25°

3
=
Ta

--5
°C

2
--25

0 10
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Base-to-Emitter Voltage, VBE -- V IT12021 Collector Current, IC -- A IT12022
hFE -- IC fT -- IC
1000 1000
Ta=25°C VCE= --10V
7 7
Gain-Bandwidth Product, fT -- MHz

5 5

3 3
DC Current Gain, hFE

2 2
VC
E
=-

100 100
-2.
--0

0V
.2V

--0.

7 7
5V

5 5
--1.0V
--0.7V

3 3

2 2

10 10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC -- A IT12023 Collector Current, IC -- A IT12024
Cob -- VCB VCE(sat) -- IC
2 --1.0
f=1MHz IC / IB=20
7
5
Saturation Voltage, VCE(sat) -- V

C
Output Capacitance, Cob -- pF

1000

3
=7


--2
Ta

7
2
°C

5
25

--0.1
Collector-to-Emitter

3 7
5
2
3
2
C
100 Ta= --25°
--0.01
7 75°C
7 25°C
5 5
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector-to-Base Voltage, VCB -- V IT12025 Collector Current, IC -- A IT12026

No. A0667-3/7
2SA2210
VCE(sat) -- IC VBE(sat) -- IC
5 3
3 IC / IB=50 IC / IB=20
2
Saturation Voltage, VCE(sat) -- V
2

Saturation Voltage, VBE(sat) -- V


--1.0
7
5
--1.0
3
Collector-to-Emitter

2
Ta= --25°C
°C 7

Base-to-Emitter
= 75
Ta C
--0.1 5° 75°C
7 --2 5
25°C
5°C
5
2
3 Ta= --25°C
3
2
75°C
25°C
--0.01 2
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Collector Current, IC -- A IT12027 Collector Current, IC -- A IT12028
Forward Bias A S O PC -- Ta
5 2.5
3
ICP= --25A
2
IC= --20A
10
PT

Collector Dissipation, PC -- W
--10 2.0
7 0m
=5
Collector Current, IC -- A

5 s
00
DC

μs

3
10
op

2
er

1.5
s
1m
ati

--1.0
s
on

7
S

5
/B

3 1.0
Li

2
m
it

--0.1
7
5 0.5
3
2 Tc=25°C
Single pulse
--0.01 0
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT12029 Ambient Temperature, Ta -- °C IT12030
PC -- Tc
35

30
Collector Dissipation, PC -- W

25

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT12031

No. A0667-4/7
2SA2210

Magazine Specification
2SA2210-1E

No. A0667-5/7
2SA2210

Outline Drawing
2SA2210-1E
Mass (g) Unit
1.8 mm
* For reference

No. A0667-6/7
2SA2210

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.

This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.

PS No. A0667-7/7

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