Tanoshige Technologies (OPC) Pvt. Ltd.

Company Profile
 Verticals

Web Applications &

FPGA based Analytics
Beam forming DSP
& steering IOT & Sensor
RCS based Node Network
On-board+ Solutions
Ground Station Antenna Sub-system
Inverse SAR
Q-V Band GEO Solutions 5G Mobile Terminal

5G LEO, GEO RADARs 5G Access Point

Satellite Defence Communication

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 Design Capabilities
Transceivers Power Amplifiers Analog & Digital
Millimeter Wave Designs Class A to E Phase Sifters
Data Conversion
DACs and ADCs Low Noise Microwave
Amplifiers Passives
RFIC QAM Modulators &
Demodulators Diplexers & Planar Antennas &
Switches Arrays
MMIC PLLs/ILLs and Clock
Recovery Bias Circuits Meta Materials

FPGA/SOC based DSP RTL to FPGA DSP functional Blocks SOCs using Microblaze
Use of Xilinx IPs Xilinx Vitis Zynq SOC based designs

Microcontroller Applications ARM SOCs based on Cortex A, M, R

COMSOL based Device Modelling HBT

Multiphysics based designs & Modelling design & Modelling FinFET p-HEMT MOSFET

BSIM 3 & 4 Models VIBIC Models Diode &

Process Development Kits for ADS Varactor Models
BSIM- CMG Models TOM4 Models
Passive Models

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 Processes
Qorvo
(Triquint PED 0.25 µm) Silicon
GaAs Generic (5 nm & 7nm)
WIN
(0.1 µm)

UMS Cree
GaN LTCC Ferro A6S
(0.25 µm) (0.25 µm)

ON Semiconductors SilTerra 130 nm

(AMI 0.5 µm)
Silicon
Micron Semiconductors UMC 180 nm

Assembly Capabilities
Global Foundry
IHP
SiGe (IBM 4,5,6 HP/DM) Ball Bond
(0.25 µm)
0.5 µm and 0.25 µm Die Attach and Wire bond
Wedge Bond
BiCMOS designs

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 Testing & Evaluation
Maury
Load & Source Pull ATN Manual Load-Pull Stands

Focus

DC & RF Probing Cascade Microtech

Pout
CW test bench Modulated Signal test bench VSA SA Gain
PA Related & Connected Solutions Return Loss
VNA Linearity
Efficiency
LNA Related NF test bench VSNA Noise Figure Meter

Series Noise Source

VCO Related PN test bench

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 Simulation & Modelling
Circuit & System Advanced Design System Cadence Virtuoso
Simulations Genesys SystemVue ADS Thermal Simulation

EM Simulations ADS Momentum Feko LTCC RCS Plastic & Ceramic IC

Packages
EMPro COMSOL FR4, BT Inverse SAR

EBG Materials Antennas & Arrays

Planar Passive

VLSI Xilinx Vitis (Vivado) QuestaSim

ModelSim VHDL HLS (System C)

Embedded Embedded C (Code Vision) Keil, ARM Dev Studio 5 (ARM) Raspberry Pi Zybo

Atmel Microcontrollers (Arduino) SOC (ROCK 960) Nucleo and Discovery Boards

FinFET Device Simulation HBT Device Simulation

Multiphysics COMSOL
MOSFET Device Simulation Heat Sink Thermal Design & Simulation

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 List of Projects Completed
1. SiGe WCDMA PA (Freq. 1.92-1.98 GHz, 39% PAE, -39dBc ACPR, 24dBm Pout, 24dB Gain, with on chip Band
gap bias circuit)
2. GaAs MESFET Class E PA (Freq. 5 GHz, 69% PAE, 76% Drain Efficiency, 28dBm Pout, 10 dB Gain)
o Package non-50 Ohm transistor FLK057WG from Fujitsu was matched at fundamental and harmonics
for Class E Operation using distributed microstrip structures on RT Duroid 5880 10 mil substrate
3. GaAs MESFET Class E PA (Freq. 10 GHz, 58% PAE, 63% Drain Efficiency, 28 dBm Pout, 10 dB Gain)
o Package non-50 Ohm transistor FLK057WG from Fujitsu was matched at fundamental and harmonics
for Class E Operation using distributed microstrip structures on RT Duroid 5880 10 mil substrate
4. Flip Chip IS95 PA (42% PAE, -45dBc ACPR, 28dBm Pout, 29dB Gain, with on chip Band gap bias circuit)
o Evaluation board was designed to attach Flip Chip version of PA on 4-layer FR4 Board
5. InGaAs p-HEMT 802.11 b/g PA (Freq. 2.4-2.5 GHz, 16/19 dBm Pout, EVM 3.8%, 28.4 dB Gain, 80/110 mA
total current)
o Evaluation board was designed on FR4 4-layer board
6. SiGe Mixer (RF Freq. 61.8-63.5 GHz, LO Freq. 57 GHz), Single-ended input Differential output, Conversion
Gain -1 dB, total current 12 mA, DC 3.3 V/1.8V, Gain Balance < 0.3 dB, phase balance < 2.8 degrees)
7. SiGe LNA (Freq. 61.8-63.5 GHz), NF 7.23 dB, Gain 8 dB, Quiescent Current 17 mA, DC 3.3 V
8. SiGe VCO (2.6-2.9 GHz, 2.9-4.5V DC Supply, 7.74mW Pout, -131dBc/Hz @10MHz offset Phase Noise,
8kHz/°C Thermal Stability, with on chip bias circuit)
9. SiGe Dual Modulus Fractional N PLL @ 400 MHz
10. SiGe Large Dynamic Range Gilbert Cell Mixer down-converter @ 2.8 GHz
11. Dual Band Fractional N PLL for Wi-Fi @ WiMAX bands in 0.13 um Silterra CMOS Process.
12. 189 W, 200 to 260 MHz, 46%DE, Band Power Amplifier for Radar Applications using Freescale Power LDMOS
o Matching was implemented on FR4 board mounted on Brass Heat Sink

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 List of Projects Completed
13. 150 W, 60 to 105 MHz Band Power Amplifier Design using Freescale Power LDMOS
o Matching was implemented on FR4 board mounted on Brass Heat Sink
14. X-band Radar Core Design- in TRIQUINT PHEMT Process
15. 9.6 W -1dB Compression Point, 9.4 to 10.4 GHz, 17 dB Gain, 42% DE, PA Design
16. 0-360-degree Phase Shifter Design, 9.4 to 10.4 GHz
17. 6 Bit Digital Attenuator with 0.5 dB step
18. 3.8 dB NF,9.4 to 10.4 GHz 16 dB LNA
19. Ka-Band LNA Design – in UMS 0.15 um PHEMT Process, 9 dB Gain, 34.5 to 35.5 GHz, 1.8 dB NF, 5 dB input at 1
dB Gain Compression
20. Ka-Band PA Design – in UMS 0.15 um PHMT Process, 16 dB Gain, 34.5 to 35.5 GHz, PAE 37%, P1dB 30 dBm
21. 37.5-39.5 GHz (Receiver) 40-42 GHz (Transmitter) for Last Mile Connectivity for Fiber to Home Connectivity,
Direct Conversion CMOS Transceiver.
22. SiGe NADC/ PDC PA (PAE 52%)
23. InGaAs p-HEMT 802.11 b/g/BT FEM (Freq. 2.4-2.5 GHz, LNA + PA + SPTT + Logic Decoder + all matching on-
chip, 1.4mm x 1.4mm die size fits in 3mm x 3mm QFN)
o Evaluation board was designed on FR4 4-layer board
24. InGaAs p-HEMT 802.11 a FEM (Freq. 4.9-5.95 GHz, LNA + PA + SPTT + Logic Decoder + all matching on-chip,
1.4mm x 1.4mm die size fits in 3mm x 3mm QFN)
o Evaluation board was designed on FR4 4-layer board
25. GaN, 15 Watts, 30 dB Gain, 37% PAE X-Band Power Amplifier MMIC
26. GaN, 1.95 dB Noise Figure, 30 dB Gain, X-Band LNA MMIC

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 Major Trainings Conducted
1. One Day “Antenna Design” Training, Medium: Adobe Flash, Agilent, Singapore
2. One Day “MMIC Design” Training, Medium: Power Point, SAMEER, Kolkata
3. Two Days “Power Amplifier Design” Workshop, Space Application Center, ISRO, Ahmedabad
4. Visiting Lecturer, Birla Institute of Technology, Pilani-Goa Campus, Goa
5. Five days “SiGe BiCMOS Design” Training, R&D Telecom Malaysia
6. One Month “Millimeter Wave LNA & VCO Design” Workshop, R&D Telecom Malaysia
7. One Month “Dual Band (Wi-Fi/WiMAX) PLL Design for Direct Conversion Transceiver” Workshop, R&D Telecom Malaysia
8. Three Days “Advanced RF Design using Genesys” Training, MACRES, Malaysia
9. Three Days “Advanced Communication System Design using Ptolemy” Training, University of Malaysia, Kuala Perlis, Malaysia
10. Five Days “Advanced RF Design using ADS” Training, Motorola, Penang, Malaysia
11. Two Day Training, “Advanced Design System*”, Baba Ramdev College of Engineering, Nagpur
12. Three Day Training, “Advanced Design System”, Ambedkar Institute of Technology, New Delhi
13. One Day Training, “Advanced Design System”, Velamal Engineering College, Tamil Nadu
14. Two Day Training, “Advanced Design System”, PSG College of Technology, Coimbatore
15. One Day Training, “Advanced Design System”, MCET, Coimbatore
16. Two Day Training, “Advanced Design System”, VIT, Mumbai
17. Five Day Training Workshop, “Linear Circuit, Simulation & Synthesis using Genesys”, Agilent Technologies, Germany
18. Five Day Training Workshop,” MMIC Designs using ADS”, BEL Bangalore
19. Two Days Training Workshop, “MIC Amplifier Design”, BEL Bangalore
20. Two Days Training, “Advanced Design System”, VSSUT
21. Two Days Training Workshop, “Advanced Design System”, Birla Institute of Technology
22. Two Day Training, “Advanced Design System”, NIT Trichy 23. Three Day Training at SAC Ahmedabad, MMIC

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 Some Examples: 1
Class E PA 5 GHz and 10 GHz
DRDO LRDE (1999)

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 Some Examples: 2 WCDMA PA
WCDMA PA 3GPP SiGe BiCMOS IBM 0.5 µm 5HP Process
IBM (2001-2002)

MMIC dimensions - 1.5mm*1.1mm Band-gap Bias Circuit for Power Stage

PTAT Bias Circuit
for Driver Stage

Power
Stage

Inter- Driver Stage

Stage

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 Some Example: 2 (Measured Results)

Jan. 23, 2001 WCDMA Power Measurement - WCDMA (3GPP 3.2 03-00)
WCDMA PA (Driver Stage=320um², Power Stage=1920um²)
52.0

48.0

44.0

40.0
Output Power/Gain/ACPR

36.0

32.0

28.0

24.0

20.0

16.0

12.0

8.0

4.0
-11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2
Input Power (dBm)

Pout(dBm) Gain(dB) PAE(%) ACPR1 L(dB) ACPR1 H(dB)

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 Some Examples:3 Wi-Fi PA
Wi-Fi PA (802.11 b/g) Qorvo (Triquint 0.25 µm TQPED)
RF Arrays for Triquint (2005)

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 Some Examples: 3 (Simulation Results)
2.9 V
3.6 V
4.5 V

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 Some Examples: 3 (Measured Results)

CW Performance

30

25

20

15
Pout, Gain, RL

10

0
-30 -25 -20 -15 -10 -5 0 5

-5

-10

-15
Pin (dBm)

Pout (dBm) Gain (dB) RL (dB)

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 Some Examples: 4 Wi-Fi SPDT and LNA
Wi-Fi LNA and SPDT (802.11 b/g) Qorvo (Triquint 0.25 µm TQPED)
RF Arrays for Triquint (2005)

SP3T

LNA

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 Some Examples: 4 (Results)

S-Parameter Response for LNA and Switch at

Vdd=2.9,3.6&4.5V (Excluding Ceramic BPF)

S-Parameter Response of SPTT

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 Some Examples: 5 Wi-Fi Radio Front End
Wi-Fi Radio Front end(802.11 b/g) Qorvo (Triquint 0.25 µm TQPED)
RF Arrays for Triquint (2005)
TR/BT Switch

Full FEM
• PA
• SPTT Switch
• LNA
• Bias Networks

1.5 mm
• ESD
Low Noise Amplifier

Power Amplifier
Figure 33: Radio Front
End Layout
1.5 mm

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 Some Examples: 6 Evaluation Board
Evaluation Board for Wi-Fi Radio Front end(802.11 b/g) 4 Layer FR4
RF Arrays for Triquint (2005)

Coaxial to CPWG Transition

Design through EM Simulations

Evaluation boards on FR4 with 50 Ohm I/P & O/P Lines

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 Some Examples: 6 VCO for Wi-Fi
SiGe VCO SiGe BiCMOS IBM 0.25 µm 6DM Process
Persistent Systems Ltd. (2006)

Electrical Parameters Target Simulated

Specifications
Frequency of Operation 2.55GHz- 2.6GHz-
2.94GHz 2.9GHz
Supply Voltage (Vcc) 2.9-4.5V 2.9-4.5V

Power Dissipation (Core) <3mW 2.95mW

Power Dissipation (Total) <18mW 7.74mW

Phase Noise @ 100 KHz -95dBc/Hz -88dBc/Hz

Phase Noise @ 1 MHz -110dBc/Hz -109dBc/Hz

Phase Noise @ 10 MHz -126dBc/Hz -131dBc/Hz

Harmonic Distortion (II) -22dBc -25dBc

Harmonic Distortion (III) -28dBc -32dBc

Thermal Stability(-40/80 C) 10KHz/C 8KHz/C

Bias Circuit Present Present

VCO Layout in IBM SiGe6DM Process

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 Some Example: 7 Wi-Fi LNA
Wi-Fi (802.11 a) LNA WIN GaAs p- HEMT 0.1 µm

(2008)

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 Some Example: 8 Wi-Fi PA
Wi-Fi (802.11 a) PA WIN GaAs p- HEMT 0.1 µm

(2008)
Power Amplifier
Circuit

Ptolemy Test
Bench

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 Some Examples: 8 (Results)
WIN GaAs p- HEMT 0.1 µm Data Rate 54 Mbps
Wi-Fi (802.11 a) PA Input Power -4.7 dBm
(2008)

Data Rate 54 Mbps

Input Power -4.7 dBm
Output Power 19 dBm

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 Some Examples: 9 Wi-Fi SPDT
Wi-Fi (802.11 a) SPDT WIN GaAs p- HEMT 0.1 µm

(2008)

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 Some Example: 9 (Results)
Wi-Fi (802.11 a) SPDT WIN GaAs p- HEMT 0.1 µm

(2008)

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 Some Examples: 10 Mixer for 60 GHz LAN
Receiver Mixer 60 GHz Indoor LAN IHP SiGe BiCMOS 0.25 µm

Telekom Malaysia R&D (2008)

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 Some Examples: 10 (Results)
Receiver Mixer 60 GHz Indoor LAN IHP SiGe BiCMOS 0.25 µm

Telekom Malaysia R&D (2008)

Set the RF Power to -5 dBm
and LO Power to 0 dBm.
Sweep the frequency across
the band of interest and plot
the results

Across frequency Response of the Mixer

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 Some Examples: 10 (Results)
Receiver Mixer 60 GHz Indoor LAN IHP SiGe BiCMOS 0.25 µm

Telekom Malaysia R&D (2008)

Set the RF to 62.65 GHz and
LO Power to 0 dBm. Sweep
the RF Power and plot the
results

Across Power Response of the Mixer

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 Some Examples: 11 L-band MIC PA
L-band 200- 260 MHz MIC PA Rogers TMM10i
Vietnam Defence R&D (2012)

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 Some Examples: 11 (Results)
L-band 200- 260 MHz MIC PA
Vietnam Defence R&D (2012)
Rogers TMM10i

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 Some Examples: 12 Transceiver @ 40 GHz
Transmitter Chain @ 36 to 40 GHz SilTerra CMOS 0.13 µm

Telekom Malaysia R&D (2012) Patch Array

MIXER BALUN

BB Amp. Diver PA

PLL

LOIA
BB Amp. Patch Array
LNA

BPFPA
ADC Power
50 Ω
Detector

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 Some Examples: 12a Transmitter Chain
Transmitter Chain @ 36 to 40 GHz SilTerra CMOS 0.13 µm

Telekom Malaysia R&D (2012)

PA

BB Amp Var Gain BALUN

Driver Amp
Schematic I Gilbert Mixer

-20.15 dB

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 Some Examples: 12b Receiver Chain
Receiver Chain @ 39 to 43 GHz SilTerra CMOS 0.13 µm

Telekom Malaysia R&D (2012)

Low Noise
Amplifier
Baseband Amplifier

RF in RF out
Injection
Amplifier Mixer
LO in

Schematic I

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 Some Examples: 12b (Results)
Receiver Chain @ 39 to 43 GHz
Telekom Malaysia R&D (2012) Receiver shows Dynamic Range of 40 dB @
SilTerra CMOS 0.13 µm 1.5 GHz Baseband Frequency Input Power
-25 dBm

Stimulus -45 dBm

-65 dBm

-55 dBm

-35 dBm

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 Some Examples: 14 Dual Band Fractional N PLL
Wi-Fi/ WiMAX Dual Band Fractional N PLL: 2.3 to 2.7 GHz and 3.1 to 3.9 GHz SilTerra CMOS 0.13 µm

Telekom Malaysia R&D (2009)

2.3-2.7 GHz 3.3-3.9 GHz
Band Select 0º 90º 0º 90º
f ref f out
Loop Filter
Vcntl
PFD CP

OCXO

CML to
5/6-bit MMFD
CMOS
f out M f Divide
CMOS to CML By 2
5/6 select

6-bit Adder
3rd Order
ƩΔ Modulator
Load 5/6-bit Register
Clk
F15 F14 F13 F12 F11 F10 F9 F8 F7 F6 F5 F4 F3 F2 F1 F0
P5 P4 P3 P2 P1 P0

Fraction Count
Coarse Count
PLL Integration as per Block Diagram implemented in ADS

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 Some Examples: 14 (Results)
Wi-Fi/ WiMAX Dual Band Fractional N PLL: 2.3 to 2.7 GHz and 3.1 to 3.9 GHz SilTerra CMOS 0.13 µm

Telekom Malaysia R&D (2009)

Final Value
3.5556

Effect of Sigma
Delta Modulation

SDM decimal output

VCO Control Voltage with 1.5 V as initial condition

PLL Output settling towards final value of 3850 MHz VCO Control Voltage & UP-DOWN PFD Output

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 Some Examples: 15a X-Band Radar FEM
X-Band FEM 8.5 GHz to 10.5 GHz Ferro LTCC Package Ferro A6S LTCC

MMRFIC for DRDO (2018)

FEM Antenna Line

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 Design Example: 15b X-Band LNA
X-Band LNA 8.5 GHz to 10.5 GHz MMRFIC for DRDO (2018) UMS GaN 0.13 µm

Two Stage LNA Layout

LNA Response with LTCC Package

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 Design Examples: 15c X Band PA
X-Band PA 8.5 GHz to 10.5 GHz
MMRFIC for DRDO (2018)
UMS GaN 0.13 µm

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 Design Examples: 15c (Results)
X-Band PA 8.5 GHz to 10.5 GHz UMS GaN 0.13 µm
MMRFIC for DRDO (2018)
Stats
• Small Signal Gain 32 dB
• 2 dB compressed at 10.5
Watt
• 5 dB compresses at 15 Watt
• Worse case return loss -7 dB
• PAE at -2dB Compression is
34.3 %
• PAE at -5dB Compression is
35.6%

Across Power PA Response with LTCC Package

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 Design Examples: 15c (Results)
X-Band PA 8.5 GHz to 10.5 GHz UMS GaN 0.13 µm
MMRFIC for DRDO (2018)

Across Frequency PA Response with LTCC Package

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 Design Examples: 16 X- Band 6-bit Phase Shifter
X-Band 6-bit Phase Shifter 8.5 GHz to 10.5 GHz UMS GaN 0.13 µm
MMRFIC for DRDO (2018)

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 Design Examples: 17 Ground Station V Band PA
V Band Ground Station 3- Stage PA 47 GHz to 50.5 GHz WIN GaAs pHEMT 0.1 µm
Space Application Center ISRO (2019)
6 Watt at 3 dB Compression Worse Case
5.5 Watt at 1.6 dB Compression Best Case

Large Signal Response of 3-stage PA

Vdc= 3.6 V

Vdc= 3.6 V

Small Signal Response of 3-stage PA

8x8 Phased Array Proposed for
Geo Ground Station

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 Design Examples: 18 Ground Station Q Band LNA
Q Band Ground Station Two Stage LNA 37 GHz to 41 GHz WIN GaAs pHEMT 0.1 µm
Space Application Center ISRO (2019)
Vdc= 3.6 V, Icq= 42 mA

8x8 Phased Array Proposed for

Geo Ground Station

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 Some Examples: 19 Device Simulation & Modelling

NMOS 7nm FinFET

NMOS electron cons.

PMOS 7nm FinFET

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 Some Examples: 20 Use of EBG in Antennas

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 Some Examples: 21 Patch Shapes in Ka Band

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 For More Information
Mob: 9731956806 (Anurag Nigam)

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