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C 2 Mos

The document provides a summary of the topics covered in the EE134 Digital Integrated Circuit (IC) Layout and Design course for Week 10, Lecture 20. The key points covered include: - Midterm exam being due in class - Dynamic logic and static random-access memory (SRAM) - Wrapping up the course with summaries of clocked CMOS logic, domino logic, dynamic shift registers, SRAM cell design, technology scaling challenges, and evaluating if course objectives and program outcomes were met.
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0% found this document useful (0 votes)
167 views11 pages

C 2 Mos

The document provides a summary of the topics covered in the EE134 Digital Integrated Circuit (IC) Layout and Design course for Week 10, Lecture 20. The key points covered include: - Midterm exam being due in class - Dynamic logic and static random-access memory (SRAM) - Wrapping up the course with summaries of clocked CMOS logic, domino logic, dynamic shift registers, SRAM cell design, technology scaling challenges, and evaluating if course objectives and program outcomes were met.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Digital Integrated Circuit (IC) Layout and

Design - Week 10, Lecture 20

ƒ Midterm Due in Class


ƒ Dynamic Logic
ƒ SRAM
ƒ Wrap up

EE134 1

Clocked CMOS Logic (C2MOS)


‰ Clocked CMOS Register (Positive Edge)
φ1 low:
• Master enabled. N1 = D. M1 & M3 on.
• Slave latched. M6 and M7 off. Output Q is
in charge storage mode (floating). Hi-Z
state (high impedance).

φ1 high:
• Master Hi-Z state (N1 floating Dn).
• Slave enabled. Qn+1 = Dn.

CLK

N1 Q

EE134 2

1
C2MOS: Precharge – Evaluate (PE) Logic
General Concept Specific Example
VDD VDD

Clk Mp off
Clk Mp on
Z 1
Out
In1 CL (AB+C)
In2 PDN A
In3 C
B
Clk Me
off
Clk Me on
CLK = 0: Precharge output Z = VDD.
Me off; Mp on. Z = VDD.

CLK = 1: Evaluate. Mp off. Me on. CLK = 0: Precharge Z = 1


Pull down Z (or not) depending on CLK = 1: Evaluate. Z = (AB + C)
logic implemented in PDN.
EE134 3

Domino Logic
‰ Like falling dominoes.
VDD VDD

Clk Mp Clk Mp
1→1
Out1
1→0
0→0
In1 0→1
In2 PDN In4 PDN
In3 In5

Clk Me Clk Me

CLK=0: Precharge
CLK=1: Logic propagates thru series of gates like dominoes falling.

EE134 4

2
Domino Logic with Keeper at output
‰ Use small Mkp

VDD VDD

Clk Mp Clk Mp Mkp


1→1
Out1 Out2
1→0
0→0
In1 0→1
In2 PDN In4 PDN
In3 In5

Clk Me Clk Me

EE134 5

Dynamic Shift Register


‰ Non-overlapping clock
φ1 high φ1 high

φ2 high φ2 high

∆1 ∆2
EE134 6

3
Non-Overlapping CLK
∆2

1
0 0 1 0 1
1 1 0 1 0
0 1 0 1
1
0
1

1 1 1 0
0 1
0 0 0 1 0
1 1 0 1 0
0

∆1
Initially, CLK=1 (Black). φ1 =1 & φ2 =0.
CLK Î 0 (Red)
CLK Î 1 (Blue)
EE134 7

Static RAM (SRAM)


‰ SRAM Cell: Simple D-FF (Latch)
BIT BIT

M3 / M4

M5 M6

M1 / M2
WORD
• Word line low
• Pass transistors M5 and M6 off.
• Data latched in inverter pair. D-FF (Latch)

• Word line high: Writing / Reading


• Writing: Write by force.
• Reading: BIT and BIT precharged to either VDD or VDD/2. Read.

EE134 8

4
SRAM at transistor level

WL

VDD
M2 M4
Q
M5 Q M6

M1 M3

BL BL

EE134 9

EE134 Summary
‰ Major Challenges
ƒ Cost
ƒ Power Consumption
ƒ Robustness
ƒ Complexity

‰ Some new circuit solutions and design


methodologies are coming.

EE134 10

5
Technology Scaling

SRC

EE134 11

Research Roadmap

EE134 12

6
Device Evolution

EE134 13

25 nm FinFET

EE134 14

7
Cost
‰ Mask cost in 90nm technology is over $1M.
‰ Bugs are very expensive.
‰ Design effort increases in DSM.
‰ Cost of new tools.
‰ Non-recurring costs dominate the price
effectiveness of low-volume ASICs.
‰ Need to have a product that can fit multiple
applications, customers (flexibility).

EE134 15

Power has become a Problem

EE134 16

8
The Productivity Gap

EE134 17

Challenges in Digital Design


‰ The Deep Submicron (DSM) Effect

∝ DSM ∝ 1/DSM
“Microscopic Problems” “Macroscopic Issues”
• Ultra-high speed design • Time-to-Market
• Interconnect • Millions of Gates
• Noise, Crosstalk • High-Level Abstractions
• Reliability, Manufacturability • Reuse & IP: Portability
• Power Dissipation • Predictability
• Clock distribution. • etc.

Everything Looks a Little


Different …and There’s a Lot of Them!

EE134 18

9
ABET Evaluation: Course Objectives
‰ Things that you should have learned in EE134.
Course Objective Very Very
Poorly Well
1 Understand the device model for a modern short- 1 2 3 4 5
channel FET.
2 Understand the parasitic diodes and capacitors of 1 2 3 4 5
an inverter.
3 Ability to layout, DRC, and LVS a CMOS digital 1 2 3 4 5
IC.
4 Calcuate delay times through inverters and logic 1 2 3 4 5
gates.
5 Size a chain of inverters to drive a large 1 2 3 4 5
capacitive load.
6 Design static CMOS logic gates. 1 2 3 4 5
7 Understand CMOS transmisison gates. 1 2 3 4 5
8 Understand CMOS transmission gate latches and 1 2 3 4 5
registers.

EE134 19

ABET: Program Outcomes


Attribute Very Very
Poorly Well
a An ability to apply knowledge of mathematics, 1 2 3 4 5
science, and engineering
b An ability to design and conduct experiments, as 1 2 3 4 5
well as to analyze and interpret data
c An ability to design a system, component, or 1 2 3 4 5
process to meet desired needs
d An ability to function on multi-disciplinary teams 1 2 3 4 5
e An ability to identify, formulate, and solve 1 2 3 4 5
engineering problems
f An understanding of professional ethical 1 2 3 4 5
responsibility
g An ability to communicate effectively 1 2 3 4 5
h The broad education necessary to understand the 1 2 3 4 5
impact of engineering solutions in a global and
societal context
i A recognition of the need for, and an ability to 1 2 3 4 5
engage in life-long learning
j A knowledge of contemporary issues 1 2 3 4 5
k An ability to use the techniques, skills, and 1 2 3 4 5
modern engineering tools necessary for
EE134engineering practice 20

10
EE134 21

11

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