MICROWAVE SILICON COMPONENTS

Contents

MICROWAVE SILICON COMPONENTS

CONTENTS
CONTENTS

New
t of
i y
Spir nolog
Tech

PAGE

INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2

SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4

SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28

All specifications contained in that catalog are subject to change without notice.

TUNING VARACTORS DIODES ............................................... 12-31

POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40

CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47

MOS CAPACITORS: Please consult page 7-39 of this catalog

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MICROWAVE SILICON COMPONENTS
Introduction

INTRODUCTION
This part of the Microwave section presents TEMEX product lines including:

• receiving diodes
• control diodes
• tuning varactors
• multiplier varactors
• step recovery diodes
• high voltage PIN diodes

TEMEX products are available in a complete assortment of packages including:

• chips
• standard
• surface mount ceramic and plastic
• non magnetic
• custom

IN-HOUSE PRODUCTION

The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer,
TEMEX performs all functions, including:

• epitaxy
• diffusion
• photomasking
• metallization
• passivation
• dicing
• packaging
• control and burn-in

TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all
junction passivations, and all mesa operations.

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 MICROWAVE SILICON COMPONENTS
Symbols

SYMBOLS
Cb .................................... Case Capacitance
Cj .................................... Junction Capacitance
CT .................................... Total Capacitance
CX/Cy .................................... Tuning Ratio
f .................................... Test Frequency
FCO .................................... Cut-off Frequency
FI .................................... Frequency Input
FIF .................................... Intermediate Frequency
FO .................................... Output Frequency
Foper .................................... Operating frequency
IF .................................... Forward Continuous Current
IR .................................... Reverse Continuous Current
IRP .................................... Reverse Pulse Current
L .................................... Conversion Loss
N/A .................................... Not Applicable
NFSSB .................................... Single Sideband Noise Figure
NFIF .................................... Noise Figure of Intermediate Frequency
∅ .................................... Gold Contact Diameter
PCW .................................... CW Power Capability
Pdiss .................................... Power Dissipation
Pin .................................... Power Input
PL .................................... Limiting Threshold
PLO .................................... Local Oscillator Power
PO .................................... Output Power
PRF .................................... RF Power
Q-X .................................... Figure of Merit
RSF .................................... Forward Series Resistance
Rth .................................... Thermal Resistance
RV .................................... Video Resistance
τI .................................... Minority Carrier Lifetime
TCR .................................... Reverse Switching Time
Tj .................................... Junction Temperature
tSO .................................... Snap-off Time
TSS .................................... Tangential Sensitivity
VBR .................................... Breakdown Voltage
VF .................................... Forward Continuous Voltage
VR .................................... Applicable Voltage (RF + bias)
VSWR .................................... Voltage Standing Wave Ratio
VT .................................... Forward Threshold Voltage
VTO .................................... Threshold Voltage
ZIF .................................... Impedance at Intermediate Frequency
ZO .................................... Output Impedance

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SILICON PIN DIODES
Selection guide

SILICON PIN DIODES

Selection Guide
PAGE

HOW TO SPECIFY A PIN DIODE? 12-5

SURFACE MOUNT PACKAGE

- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6

- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8

- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES 12-10

- SQUARE CERAMIC PIN DIODES 12-12

- NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES 12-15

HIGH VOLTAGE PIN DIODES 12-17

- SWITCHING & PHASE SHIFTING APPLICATIONS 12-18

- TWO AND THREE PORTS RF PIN SWITCH MODULES 12-20

MICROWAVE APPLICATIONS 12-22

- ULTRAFAST SWITCHING SILICON PIN DIODES 12-23

- FAST SWITCHING SILICON PIN DIODES 12-24

- ATTENUATOR SILICON PIN DIODES 12-25

- SILICON LIMITER PIN DIODES 12-26

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 SILICON PIN DIODES
How to specify a PIN diode

HOW TO SPECIFY A PIN DIODE ?

To obtain the PIN diodes best suited for a specific application, consider the following:

1. Application 8. Maximum loss expected

• switch
9. Minimum isolation needed
• attenuator
10. VSWR and distortion requirements
• limiter

11. Power applied to the diode

2. Frequency and bandwidth requirements
• forward biased
3. Power characteristics • reverse biased
• peak • during switching
• average
12.Static characteristics
• pulse duration and duty cycle

4. Switching time • applicable voltage: VR

• total capacitance: CT
5. Bias conditions
(in space charge)
• forward
• forward series resistance: RSF
• reverse
• carrier lifetime τl
6. Circuit impedance • thermal resistance: Rth

7. Shunt or series assembly 13. Mechanical and packaging constraints

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SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes

PLASTIC PACKAGE SURFACE MOUNT SWITCHING

SILICON PIN DIODES

Description

TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.

This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.

Applications

The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)
and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching
time and low switching current.

TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak
power, RF and microwave applications (up to 3 GHz).

Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems)
and filter switches, phase shifters ....

Note: To reduce the distortion, it is necessary to verify and design with the following formula:

ÎHF
πτl IDC F
<< 1

ÎHF : RF peak current (A)

τl : Diode minority carrier lifetime (s)
IDC : DC bias current (A)
πF : Application frequency (Hz)

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 SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes

Characteristics @ Ta = +25° C
PACKAGED DIODES
Breakdown Total Series Minority carrier
voltage (VBR (1)) capacitance (CT (2)) resistance (RSF) lifetime (τI)
F = 1 MHz IF = 10 mA IF = 10 mA
Test conditions IR = 10 µA
VR = 50 V F = 120 MHz IR = 6 mA
V pF Ω ns
Type
min. max max typ.
DH50051 35 0.3 (3) 2.5 (5) 150
DH50058 35 1 (3) 0.5 200
DH50053 50 0.35 (4) 1.5 200
DH50103 100 0.35 3 500
DH50109 100 1.2 0.6 1000
DH50203 200 0.35 3 500
DH50209 200 1.2 0.6 1000
DH80051 400 0.6 2 2000
(1) : Other breakdown values on request (4) : VR = 20 V at F = 1 MHz
(2) : Other capacitance values on request (5) : RSF at IF = 5 mA
(3) : VR = 5 V at F = 1 MHz
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C Storage : -55° C to +150° C
Packages

SOD323 SOT23 SOT23 SOT23 SOT143

Packages

DH50051 DH50051-60 DH50051-51 DH50051-53 DH50051-54 DH50051-70

DH50058 DH50058-60 DH50058-51 DH50058-53 DH50058-54 DH50058-70
DH50053 DH50053-60 DH50053-51 DH50053-53 DH50053-54 DH50053-70
DH50103 DH50103-60 DH50103-51 DH50103-53 DH50103-54 DH50103-70
DH50109 DH50109-60 DH50109-51 DH50109-53 DH50109-54 DH50109-70
DH50203 DH50203-60 DH50203-51 DH50203-53 DH50203-54 DH50103-70
DH50209 DH50209-60 DH50209-51 DH50209-53 DH50209-54 DH50209-70
DH80051 DH80051-60 DH80051-51 DH80051-53 DH80051-54 DH80051-70

(1) Other configuration available on request.

How to order?

DH50051 - 51 T3

Diode type Package Conditioning

information
51: single SOT23 T3: 3000 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143

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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes

PLASTIC PACKAGE SURFACE MOUNT ATTENUATING

SILICON PIN DIODES

Description

TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.

This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.

Applications

Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits,
from MHz to several GHz.

The attenuating Pin diode uses properties of variation of forward series resistance versus the DC
forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used
in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device
may be matched through the attenuation range.

Note: To reduce the distortion, it is necessary to verify and design with the following formula:

ÎHF
πτl IDC F << 1

ÎHF : RF peak current (A)

τl : Diode minority carrier lifetime (s)
IDC : DC bias current (A)
F : Application frequency (Hz)

Typical performance curve

RSF (Ω) Typical series resistance versus forward current

1000

100 DH40144
DH40225
DH40141
10

1 IF (mA)
0.1 1 10

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 SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes

Electrical characteristics at 25° C

I Zone Junction Reverse Carrier

Electrical Forward series
thickness capacitance current lifetime
Parameters resistance Rsf (Ω)
(1) Cj (2) IR τI
IF = 10 mA
Test conditions µm F = 120 MHz F = 1 MHz VR = 100 V
IR = 6 mA
IF = 0.1 mA IF = 1 mA IF = 10 mA pF µA µs
Type
typ. min. max min. max min. max typ. max max typ.
DH40141 140 400 800 50 100 6.5 13 0.05 0.10 10 2.5
DH40144 140 200 400 25 50 3.5 7 0.10 0.30 10 5.0
DH40225 220 400 800 50 100 6.5 13 0.10 0.30 10 7.0

(1) Other I zone thicknesses on request

(2) Other capacitance values on request (measured at 50 V)

Temperature ranges:

Operating junction (Tj) : - 55° C to + 125° C

Storage : - 65° C to + 150° C

Packages

SOD323 SOT23 SOT143

Packages

DH40141 DH40141-60 DH40141-51 DH40141-70

DH40144 DH40144-60 DH40144-51 DH40144-70
DH40225 DH40225-60 DH40225-51 DH40225-70
(1) Other configuration available on request.
How to order?

DH40141 - 51 T3

Diode type Package Conditioning

information
51: single SOT23 T3: 3000 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143
87: SOT323

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SILICON PIN DIODES
Low cost square ceramic package PIN diodes

LOW COST SQUARE CERAMIC PACKAGE PIN DIODES

Features Description

• Low loss, low distortion TEMEX is manufacturing a square PIN diode

for surface mount applications. The chip inside
• Low inductance is passivated to ensure high reliability and very
low leakage current. These diodes ensure high
• High reliability power switching at frequencies from HF to few
GHz. This package utilizes ceramic package
• Hermetically sealed package technology with low inductance and leadless
faced package. The design simplifies automatic
• Non rolling MELF design pick and place indexing and assembly.
The termination contacts are tin plated for
• Pick and place compatibility vapor or reflow circuit board soldering. The
active area is a PIN glass passivated chip, which
can be designed to customer specifications.

Pinning Outline drawing

SOLDERABLE
SURFACES
A

CERAMIC
A

C
B

Millimeters Inches
Package Symbol min. max min. max
FULL FACE BOND CHIP A 2 2.3 .079 .091
SMD4 B 2.9 3.5 .114 .138
C 0.3 0.8 .012 .031
A 2.5 2.8 .098 .0110
SMD6 B 4.7 5.2 .185 .205
C 0.3 0.8 .012 .031
A 3.50 3.81 .138 .150
SMD8 B 4.70 5.2 .185 .205
C 0.20 0.38 .008 .015

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 SILICON PIN DIODES
Low cost square ceramic package PIN diodes

Applications

TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly.
Several values of total capacitance are available, together with a low forward series resistance. These
components are designed to meet the low distortion specification required by all the mobile radio
applications. Due to the specific design, these devices offer low loss and low thermal resistance
performance and are characterized for high power handling. The electrical properties are ideal for use
in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz
frequencies.

Electrical characteristics at 25° C

Applicable Total Forward Minority

Electrical Power
Package voltage capacitance series resistance carrier
Parameter dissipation
V CT RSF lifetime
τI
f = 1 MHz f = 120 MHz IF = 10 mA Contact
Test conditions IR < 10 µA
VR = 50 V IF = 50 mA IR = 6 mA surface (1)
V pF Ω µs W
Type Type
max typ. max typ. max min. max
SQM1050 SMD4 (2) 50 0.6 0.7 0.70 0.90 1.0 3.0
SQM1150 SMD4 200 1.0 1.2 0.25 0.35 1.0 3.0
SQM1250 SMD4 50 0.9 1.2 0.50 0.75 2.0 4.0
SQM1350 SMD4 (2) 50 1.5 1.7 0.40 0.60 3.5 4.5
SQM1450 SMD8 50 1.8 2.5 0.50 0.75 5.0 8.0
SQM2050 SMD4 50 0.6 0.7 0.7 1.00 1.0 3
w!
Ne SQM2150 SMD4 50 1.0 1.2 0.25 0.35 1.0 3

(1) diode brazed on infinite copper heat sink at 25° C

(2) standard package SMD4 also available in SMD6

Temperature ranges:

Operating junction (Tj) : -55° C to +150° C

Storage : -65° C to +150° C
Soldering : 230° C 5 Sec.

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SILICON PIN DIODES
Square ceramic surface mountable PIN diodes

SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES

Description

These PIN diodes are manufactured in a square package (SMD) for surface mount applications.
These packages utilize ceramic package technology with low inductance and axial terminations.
This design simplifies automatic pick and place indexing and assembly. The termination contacts are
tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards.

These diodes are particularly suited for applications in frequency hopping radios, low loss,
low distortion, and filters in HF, VHF and UHF frequencies.

Packages

Packages SMD4 SMD4AM SMD6 SMD8 SMD8AM

DH50209 -06 -40

DH80050 -06 -40
DH80051 -06 -40
DH80052 -06 -40
DH80053 -06 -40
DH80054 -06 -40
DH80055 -06 -40 -20
DH80082 -06 -40 -20
DH80100 -06 -40 -20
DH80102 -20 -24 -44
DH80106 -24 -44

Other specifications available on request.

How to order?

DH80053 - 06 T3

Diode type Package Conditioning

information
-06: SMD4 T1: 1000 pieces
-40: SMD4AM tape & reel
SMD8AM T3: 3000 pieces
-20: SDM6 tape & reel
-24: SMD8 blank: bulk

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 SILICON PIN DIODES
Square ceramic surface mountable PIN diodes

Electrical characteristics

Low voltage PIN diodes

Breakdown Total Forward Minority

Vbr capacitance series resistance carrier
(V) Ct (pF) Rsf (Ω) t l (µs)
Test Vr = 50 V If = 50 mA If = 10 mA
Ir = 10 µA
conditions f = 1 MHz f = 120 MHz Ir = 6 mA
Type min. typ. max. max. min.

DH50209 200 1.00 1.20 0.25 2.00

Medium voltage PIN diodes

Applicable Breakdown Total capacitance Forward series Minority Max. power

voltage V Vbr Ct resistance Rsf carrier dissipation
(V) (V) (pF) (Ω) τl (µs) 25° C
Test I < 10 µA Ir = 10 µA Vr = 50 V I= 100mA I= 200 mA If= 10mA Contact Free
conditions f = 1MHz f= 120MHz f= 120 MHz Ir= 6mA surface air
Type max. typ. typ. max. max. min. W (1) W (2)
DH80050 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2
DH80051 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2
DH80052 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2
DH80053 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5
DH80054 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5
DH80055 500 550 1.45 1.55 0.28 0.25 3.5 4.5 1.5

(1) Diode brazed on infinite copper heat sink

(2) Diode brazed on Epoxy circuit (PCB)

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SILICON PIN DIODES
Square ceramic surface mountable PIN diodes

Medium voltage PIN diodes

Applicable Breakdown Total capacitance Forward series Minority Max. power

voltage V Vbr Ct resistance Rsf carrier dissipation
(V) (V) (pF) (Ω) τl (µs) 25° C
Test Vr = 50 V I=100mA I=200 mA If=10mA Contact Free
I < 10 µA Ir = 10 µA
conditions f = 1MHz f=120MHz f=120 MHz Ir=6mA surface air
Type max. typ. typ. max. max. min. W (1) W (2)
DH80082 800 850 0.90 1.00 0.40 0.35 3.00 TBD TBD
DH80100 1000 1100 0.55 0.65 0.70 0.60 3.00 TBD TBD
DH80102 1000 1100 0.85 1.00 0.50 0.35 4.00 TBD TBD
DH80106 1000 1100 1.25 2.00 0.35 0.30 7.00 TBD TBD

(1) Diode brazed on infinite copper heat sink

(2) Diode brazed on Epoxy circuit (PCB)

Temperature ranges

Operating junction (Tj) : -55° C to +150° C

Storage : -65° C to +150° C

Series Resistance vs. Forward Current

RSF (Ω)
100

DH80052
10 DH80050

0 I (mA)
0.1 10 100 1000

RSF (Ω)
100

10
DH80053
DH80051

0 I (mA)
0.1 10 100 1000

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 SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes

NON MAGNETIC SQUARE CERAMIC PACKAGE

500 VOLTS PIN DIODES

Features Description

• Non magnetic package TEMEX is manufacturing a non magnetic

square PIN diode for surface mount appli-
• Low loss, low distortion cations. The properties of non magnetism
prevent interference in the magnetic field of the
• Low inductance
imaging system. The chip inside is passivated to
• High reliability ensure high reliability and very low leakage.
These diodes ensure high power switching at
• Hermetically sealed package frequencies from 1 MHz to several GHz. This
package utilizes ceramic package technology
• Glass passivated PIN diode chip with low inductance and axial terminations. The
design simplifies automatic pick and place
• Non rolling MELF design indexing and assembly. The termination
contacts are tin plated for vapor or reflow circuit
• Pick and place compatibility
board soldering. The active area is a PIN high
power glass passivated chip which can be
designed to customer specifications.

Pinning Outline drawing

SOLDERABLE
SURFACES
80 + -0 .3
(.0 .00 +0
-0 12
)
.0
2

CERAMIC
(.080 )
+.012
+0.3
-0

-0
2.00

0.635 max
+0.3
3.20
-0.3
(.025 max)
+.012
(.126 )
-.012

FULL FACE BOND CHIP

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SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes

Applications Maximum ratings

TEMEX non magnetic SQP diodes are OPERATING

particularly suitable for Magnetic Resonance STORAGE SOLDERING
JUNCTION
Imaging applications. The maximum operating
breakdown voltage is 550 V. Several values of - 55° C - 65° C 230° C 5 sec.
total capacitance are available (beginning at
0.40 pF), together with a low forward series + 150° C + 150° C
resistance.
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetime design). The electrical properties
are ideal for use in RF coils which must produce
a homogeneous electromagnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.

Electrical characteristics

STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS

PACKAGED DIODES
Minority
Characteristics Applicable Breakdown Total Forward series Power
carrier
at 25° C voltage voltage capacitance resistance dissipation
lifetime
V VBR CT RSF τI
Test f = 1 MHz f = 120 MHz IF = 10 mA Contact
IR < 10 µA Ir < 10 µA
conditions VR = 50 V IF as below IR = 6 mA surface (1)

TYPE V V pF Ω max µs W
max typ. typ. max IF=100mA IF=200mA min. max
DH80050-40 500 550 0.40 0.45 0.70 0.65 1.1 3.0
DH80051-40 500 550 0.55 0.65 0.60 0.55 1.5 3.5
DH80052-40 500 550 0.85 1.05 0.40 0.35 2.0 4.0
DH80053-40 500 550 1.05 1.20 0.35 0.30 2.5 4.0
DH80054-40 500 550 1.25 1.35 0.30 0.27 3.0 4.5
DH80055-40 500 550 1.45 1.55 0.25 0.22 3.5 4.5

(1) diode brazed on infinite copper heat sink

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 SILICON PIN DIODES
High voltage PIN diodes

HIGH VOLTAGE PIN DIODES

Applications Characteristics

These devices are most often used to control The controlling element of a PIN diode is its
Radio Frequency (RF) and microwave signals. Intrinsic (l) layer. The diode itself is a sandwich,
Typically, high-voltage PIN diodes are found in i.e. a high resistivity l layer between highly
high power switches and phase shifters. doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
TEMEX high-voltage PIN diode products are exhibits very high parallel resistance, e.g. acting
designed for very high reliability, high power as a switch in the OFF position. A positive bias
handling capabilities, high isolation, and low causes the diode to conduct, with very low
signal distortion, especially in the HF and VHF series resistance. Certain applications impose
bands. High-power multithrow switch modules specific objectives on diode construction (e.g.
are available for frequencies in the 1 MHz to in the HF and VHF band, low signal distortion
1 GHz range. can be achieved with high Minority Carrier
Lifetime τl).
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.

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SILICON PIN DIODES
High voltage PIN diodes

SILICON PIN DIODES FOR SWITCHING & PHASE

SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.

Electrical characteristics

CHIP DIODES CHIP AND PACKAGED DIODES

Break-
Applicable Junction Forward series Minority
Characteristics Chip
voltage down capacitance resistance carrier
at 25°C dimensions
VR VBR Cj (1) RSF lifetime
τI
VR = 50 V f = 120 MHz IF = 10 mA
Test conditions N/A I < 10µA I < 10µA
f = 1 MHz IF AS SHOWN IR = 6mA
TYPE mm typ. V V pF Ω MAX µS
PIN Gold dia per side min. typ. typ. max IF = 100 mA IF = 200 mA min.

EH80050 0.13 0.6 500 550 0.15 0.20 0.70 0.65 1.1
EH80051 0.15 0.6 500 550 0.30 0.40 0.60 0.55 1.5
EH80052 0.25 0.8 500 550 0.60 0.70 0.40 0.30 2.0
EH80053 0.27 0.8 500 550 0.80 0.90 0.30 0.25 2.5
EH80055 0.34 0.9 500 550 1.2 1.3 0.25 0.22 3.0
EH80080 0.13 0.8 800 850 0.15 0.35 0.80 0.70 2.0
EH80083 0.27 0.9 800 850 0.80 0.90 0.40 0.30 3.0
EH80086 0.55 1.4 800 850 1.4 1.7 0.35 0.28 5.0
EH80100 0.23 0.9 1000 1100 0.30 0.40 0.70 0.60 3.0
EH80102 0.30 0.9 1000 1100 0.60 0.75 0.40 0.35 4.0
EH80106 0.55 1.4 1000 1100 1.40 1.70 0.35 0.30 7.0
VR = 100V IF = 200 mA IF = 300 mA

EH80120 0.25 0.9 1200 1300 0.30 0.40 0.60 0.55 6.0
EH80124 0.65 1.5 H (2) 1200 1300 1.00 1.20 0.45 0.35 10.0
EH80126 0.75 1.7 H (2) 1200 1300 1.40 1.70 0.40 0.30 12.0
EH80129 1.25 2.2 1200 1300 2.00 2.30 0.30 0.25 15.0
EH80154 0.65 1.5 1500 1600 1.00 1.20 0.45 0.35 10.0
EH80159 1.25 2.2 1500 1600 2.00 2.30 0.30 0.25 15.0
VR = 200V IF = 200 mA IF = 300 mA

EH80182 0.75 1.5 1800 1900 0.60 0.80 0.60 0.50 12.0
EH80189 1.4 2.6 H (2) 1800 1900 2.00 2.40 0.35 0.30 18.0
EH80204 0.85 1.7 2000 2100 1.00 1.30 0.50 0.40 14.0
EH80209 1.4 2.6 H (2) 2000 2100 2.00 2.40 0.35 0.30 18.0
EH80210 1.5 3 H (2) 2000 2100 3.00 3.40 0.20 0.15 25.0

(1) Other capacitance values available on request

(2) Hexagonal chips (between opposite flats)

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 SILICON PIN DIODES
High voltage PIN diodes

PACKAGED DIODES
Thermal Typical operating
resistance conditions
RTH (4)
Type Standard case (3)
VSWR < 1.5
PDISS = 1 W Z0 = 50 Ω
Chip configuration
°C/W Frequency Power
PIN Shunt Isolated stud Flat mounted max MHz W
DH80050 F 27d BH301 BH202 20.0 50 - 20000 50
DH80051 F 27d BH301 BH202 18.0 30 - 15000 80
DH80052 F 27d BH301 BH202 15.0 20 - 10000 100
DH80053 F 27d BH301 BH202 12.0 20 - 3000 100
DH80055 F 27d BH301 BH202 10.0 10 - 1000 250
DH80080 F 27d BH301 BH202 18.0 50 - 20000 60
DH80083 F 27d BH301 BH202 12.0 20 - 10000 80
DH80086 BH35 BH301 BH202 8.0 10 - 500 200
DH80100 F 27d BH301 BH202 15.0 20 - 10000 80
DH80102 F 27d BH301 BH202 12.0 20 - 3000 100
DH80106 BH35 BH300 BH202 5.5 10 - 500 500

DH80120 F 27d BH301 BH202 15.0 10 - 8000 100

DH80124 BH35 BH300 BH200 8.0 10 - 2000 250
DH80126 BH35 BH300 BH200 6.0 10 - 500 500
DH80129 BH141 BH300 BH200 4.5 5 - 200 1000
DH80154 BH141 BH300 BH200 8.0 10 - 2000 250
DH80159 BH141 BH300 BH200 4.5 5 - 200 1000

DH80182 BH35 BH300 BH200 10 10 - 50

DH80189 BH141 BH300 BH200 4.5 15 - 200 1000
DH80204 BH141 BH300 BH200 8.0 10 - 1000 250
DH80209 BH141 BH300 BH200 4.5 1.5 - 200 1000
DH80210 BH141 BH300 BH200 2.5 1.5 - 50 1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink

Temperature ranges: Operating junction (Tj): -55° C to +175° C Storage: -65° C to +200° C

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SILICON PIN DIODES
High voltage PIN diodes

TWO & THREE PORT RF PIN SWITCH MODULES

Description

This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.

Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Electrical characteristics

Characteristics Frequency Loss Isolation Input power Suggested bias

at 25°C range conditions
L I Pin
f (MHz) f (MHz)
Test conditions N/A CW Forward Reverse
If (mA) Vr (V)
Switch
Type Case MHz dB dB W mA V
Type
(1) (2) typ. max min. max typ. typ.
200 MHz 100 MHz
100 mA 0V
SH90101 TO39 SP2T 10 - 600 0.35 35 10 100 50
SH91101 TO39 SP2T 10 - 600 0.35 35 10 100 50
400 MHz 200 MHz
100 mA 0V
SH90103 BH203 SP2T 20 - 1000 0.35 25 100 200 150
SH91103 BH203 SP2T 20 - 1000 0.35 25 100 200 150
SH92103 BH204 SP3T 20 - 1000 0.35 25 100 200 150
SH93103 BH204 SP3T 20 - 1000 0.35 25 100 200 150
100 MHz 200 MHz
200 mA 100 V
SH91107 BH403a SP2T 20 - 500 0.20 33 1000 400 600
10 MHz 10 MHz
200 mA 200 V
SH90207 BH405 SP2T 1.5 - 50 0.15 37 1000 1000 700
SH91207 BH405 SP2T 1.5 - 50 0.15 37 1000 1000 700

(1) Series 90 and 92 : common anode (2) Custom configurations available on request
Series 91 and 93 : common cathode

Temperature ranges:
Operating junction (Tj) : - 55° C to + 150° C
Storage : - 65° C to + 175° C

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 SILICON PIN DIODES
High voltage PIN diodes

Internal wiring diagrams Typical performances

INSERTION LOSS AND ISOLATION

VERSUS FREQUENCY

common common Insertion Isolation

loss (dB) (dB)
anode cathode 0.9 46
0.8 44
0.7 42
Isolation
0.6 40
BOTTOM 0.5 38
VIEW 0.4 36
0.3 34
0.2 32
SH90101 SH91101 0.1 Insertion 30
0
loss 28 f
10 20 30 50 70 100 200 400 600 (MHz)

Insertion Isolation
loss (dB) (dB)
0.8 52

0.7 48

0.6 44

SH90103 SH91103 0.5 40

0.4 Isolation 36

0.3 32

0.2 28

0.1 Insertion 24

0 loss 20 f
20 30 50 70 100 200 400 700 1000 (MHz)

SH92103 SH93103

Insertion Isolation
loss (dB) (dB)
0.8 52
0.7 48
0.6 44

0.5 40
Isolation
0.4 36

0.3 32

0.2 Insertion 28
SH91107 0.1
loss
24

0 20 f
20 30 50 70 100 200 300 500 (MHz)

Insertion Isolation
loss (dB) (dB)
0.8 54
0.7 51
0.6 48

0.5 45
bias bias bias bias Isolation
0.4 42

0.3 38

0.2 Insertion 36
SH90207 SH91207 loss
0.1 33

0 30 f
1 2 3 5 7 10 20 30 50 (MHz)

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SILICON PIN DIODES
Microwave applications

MICROWAVE APPLICATIONS

Low and medium voltage PIN diode applications

The most common uses of these devices are: fast switching, attenuation and limiting. They operate at
frequencies from a few MHz to 100 GHz.

In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels
below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 µm, and passivated mesa technology in chip
configurations, yield very low junction capacitance (Cj), i.e. below 0.025 pF.

As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with
a proprietary technology. This technology optimizes the relationship between Cj and RSF (Forward
Series Resistance), offering a high Minority Carrier Lifetime τl, which minimizes signal distortion.

In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power
dependent variable resistors.

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 SILICON PIN DIODES
Microwave applications

ULTRAFAST SWITCHING SILICON PIN DIODES

Description

For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 µm).

Electrical characteristics

CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES

Characteristics Gold Breakdown Junction Series Minority Reverse Thermal
at 25°C dia voltage capacitance resistance carrier switching resistance
lifetime time

Ø VBR Cj RSF τI TCR Rth

Test VR = 6 V IF = 10 mA IF = 10 MA IF = 20 mA Pdiss
IR = 10 µA
conditions f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V 1W
50 Ω F 27 d
Type µm V pF Ω ns ns Type Standard cases (1) °C/W
Cb = Cb =
Case
typ. min. typ. max max typ. typ. 0.18 pF 0.12 pF max
C2a (1)
(2) (2)
EH50033 25 30 0.08 0.12 1.8 20 2.0 DH50033 F27d M208 80
EH50034 30 30 0.12 0.17 1.5 20 2.0 DH50034 F27d M208 80
EH50035 35 30 0.17 0.23 1.0 25 2.5 DH50035 F27d M208 70
EH50036 55 30 0.23 0.40 0.9 30 3.0 DH50036 F27d M208 60
EH50037 65 30 0.40 0.60 0.7 40 4.0 DH50037 F27d M208 50
EH50052 30 50 0.06 0.08 1.6 30 3.0 DH50052 F27d M208 80
EH50053 35 50 0.08 0.12 1.4 30 3.0 DH50053 F27d M208 70
EH50054 40 50 0.12 0.17 1.1 35 4.0 DH50054 F27d M208 60
EH50055 50 50 0.17 0.23 1.0 40 4.0 DH50055 F27d M208 50
EH50056 65 50 0.23 0.40 0.9 50 5.0 DH50056 F27d M208 45
EH50057 80 50 0.40 0.60 0.7 60 6.0 DH50057 F27d M208 45
EH50071 35 70 0.04 0.06 2.0 50 5.0 DH50071 F27d M208 70
EH50072 40 70 0.06 0.08 1.7 50 5.0 DH50072 F27d M208 70
EH50073 45 70 0.08 0.12 1.6 60 6.0 DH50073 F27d M208 60
EH50074 50 70 0.12 0.17 1.4 60 6.0 DH50074 F27d M208 50
EH50075 60 70 0.17 0.23 1.0 100 10.0 DH50075 F27d M208 45
EH50076 80 70 0.23 0.40 0.9 100 10.0 DH50076 F27d M208 40
EH50077 100 70 0.40 0.60 0.7 150 15.0 DH50077 F27d M208 40
EH50101 45 100 0.04 0.06 1.9 150 15.0 DH50101 F27d M208 60
EH50102 50 100 0.06 0.08 1.7 150 15.0 DH50102 F27d M208 60
EH50103 60 100 0.08 0.12 1.4 200 20.0 DH50103 F27d M208 55
EH50104 70 100 0.12 0.17 1.2 250 25.0 DH50104 F27d M208 50
EH50105 90 100 0.17 0.23 1.0 300 30.0 DH50105 F27d M208 40
EH50106 110 100 0.23 0.40 0.8 400 40.0 DH50106 F27d M208 35
EH50107 130 100 0.40 0.60 0.6 500 50.0 DH50107 F27d M208 35

(1) Custom cases available on request Temperature ranges:

(2) C T = Cj + C b Operating Junction (Tj) : -55° C to +175° C
Storage : -65° C to +200° C

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SILICON PIN DIODES
Microwave applications

FAST SWITCHING SILICON PIN DIODES

Description

For fast switching, these passivated mesa diodes have a medium I layer (< 50 µm).

Electrical characteristics

CHIP DIODES E L CHIP

E AND
C PACKAGED
T R IDIODES
C A L PACKAGED DIODES
Characteristics Gold Breakdown Junction Series Minority Reverse Thermal
at 25°C dia voltage capacitance resistance carrier switching resistance
lifetime time

Ø VBR Cj RSF τI TCR Rth

Test VR = 50 V IF = 10 mA IF = 10 MA IF = 20 mA Pdiss
IR = 10 µA
conditions f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V 1W
50 Ω F27 d
Type µm V pF Ω ns ns Type Standard cases (2) °C/W
Cb = Cb =
Case
typ. min. typ. max max typ. typ. 0.18 pF 0.12 pF max
C2a (1)
(2) (2)
EH50151 55 150 0.04 0.06 2.0 200 20 DH50151 F27d M208 50
EH50152 60 150 0.06 0.08 1.7 230 23 DH50152 F27d M208 50
EH50153 70 150 0.08 0.12 1.5 300 30 DH50153 F27d M208 45
EH50154 90 150 0.12 0.17 1.4 500 50 DH50154 F27d M208 40
EH50155 110 150 0.17 0.23 1.0 550 55 DH50155 F27d M208 35
EH50156 130 150 0.23 0.40 0.8 800 80 DH50156 F27d M208 30
EH50157 150 150 0.40 0.60 0.6 950 95 DH50157 F27d M208 30
EH50201 60 200 0.04 0.06 2.3 300 30 DH50201 F27d M208 45
EH50202 65 200 0.06 0.08 2.1 400 40 DH50202 F27d M208 45
EH50203 75 200 0.08 0.12 1.5 500 50 DH50203 F27d M208 40
EH50204 100 200 0.12 0.17 1.3 650 65 DH50204 F27d M208 35
EH50205 120 200 0.17 0.23 1.0 800 80 DH50205 F27d M208 30
EH50206 150 200 0.23 0.40 0.8 950 95 DH50206 F27d M208 30
EH50207 170 200 0.40 0.60 0.7 1050 100 DH50207 F27d M208 25
EH50251 65 250 0.04 0.06 2.4 330 33 DH50251 F27d M208 40
EH50252 75 250 0.06 0.08 2.2 500 50 DH50252 F27d M208 40
EH50253 100 250 0.08 0.12 2.0 900 90 DH50253 F27d M208 35
EH50254 130 250 0.12 0.17 1.4 900 90 DH50254 F27d M208 30
EH50255 160 250 0.17 0.23 0.9 1000 100 DH50255 F27d M208 30
EH50256 180 250 0.23 0.40 0.8 1150 110 DH50256 F27d BH142 25
EH50401 80 400 0.04 0.06 2.5 700 70 DH50401 F27d M208 35
EH50402 90 400 0.06 0.08 2.3 800 80 DH50402 F27d M208 35
EH50403 120 400 0.08 0.12 2.1 1000 100 DH50403 F27d M208 30
EH50404 150 400 0.12 0.17 1.8 1500 150 DH50404 F27d BH142 25
EH50405 200 400 0.17 0.23 1.6 2000 200 DH50405 F27d BH142 20

(1) Chip presentation C2a, except: Temperature ranges:

C2b for EH50256, EH50404 and EH50405 Operating junction (Tj) : -55° C to +175° C
(2) Custom cases available on request Storage : -65° C to +200° C
(3) CT = Cj + Cb

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 SILICON PIN DIODES
Microwave applications

ATTENUATOR SILICON PIN DIODES

Description

The table below presents a single set of values from the variety of customer options available for this
series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the customer
to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness.
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from
a few MHz to several GHz.

Electrical characteristics

PACKAGED
CHIP DIODES CHIP AND PACKAGED DIODES
DIODES
C I Junction Reverse Minority carrier
Series resistance
Charact. O ZONE capacitance current lifetime
at 25°C N
F
THICKNESS RSF
CJ (2) IR τI
(1)
I
Test G F = 1 MHz IF = 10 mA
U F = 120 MHz VR = 50 V VR = 100 V IR = 6 mA
conditions
R
A µm Standard
IF = 0.1 mA IF = 1 mA IF = 10 mA
Type T pF µA µs Type package
I Ω Ω Ω (3)
O
N typ. min. max min. max min. max typ. max max min. typ.
EH40073 C4c 70 70 140 8 16 1.0 2.0 0.30 0.50 10 1.5 2.0 DH40073 F 27d
EH40141 C4a 140 400 800 50 100 6.5 13.0 0.05 0.10 10 1.5 2.5 DH40141 F 27d
EH40144 C4c 140 200 400 25 50 3.5 7.0 0.10 0.30 10 4.0 5.0 DH40144 F 27d
EH40225 C4d 220 400 800 50 100 6.5 13.0 0.10 0.30 10 5.5 7.0 DH40225 F 27d

(1) Other I zone thicknesses available on request Temperature ranges:

(2) Other capacitance values available on request Operating junction (Tj) : -55° C to +175° C
(3) Custom cases available on request Storage : -65° C to +200° C

Typical series resistance vs forward current

RSF (Ω)
1000

EH40141 - EH40225
100 EH40144
EH40073

10

1 IF (mA)
0.1 1 10 100

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SILICON PIN DIODES
Microwave applications

SILICON LIMITER PIN DIODES

Description

These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in
hermetic ceramic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise amplifiers, mixers, and detectors).

Electrical characteristics

CHIP DIODES PACKAGED DIODES

Breakdown Junction Junction Series Minority

GOLD DIA voltage capacitance capacitance carrier
Characteristics at 25°C resistance lifetime
Ø
VBR Cj0 Cj-6 (1) RSF τ I
IR = 10 µA VR = 0 V VR = 6 V IF = 10 mA IF = 10 mA
Test conditions
f = 1 MHz f = 1 MHz f = 120 MHz IR = 6 mA
Type Case µm V pF pF Ω ns
typ. min. max typ. min. max max typ.
EH60033 C2a 25 25 50 0.14 0.08 0.12 1.8 20
EH60034 C2a 30 25 50 0.20 0.12 0.17 1.5 20
EH60035 C2a 35 25 50 0.28 0.17 0.23 1.0 25
EH60036 C2a 55 25 50 0.45 0.23 0.40 0.9 30
EH60037 C2a 65 25 50 0.70 0.40 0.60 0.7 40
EH60052 C2a 30 50 70 0.10 0.06 0.08 1.8 30
EH60053 C2a 35 50 70 0.14 0.08 0.12 1.4 30
EH60054 C2a 40 50 70 0.20 0.12 0.17 1.1 35
EH60055 C2a 50 50 70 0.28 0.17 0.23 1.0 40
EH60056 C2a 65 50 70 0.45 0.23 0.40 0.9 50
EH60057 C2a 80 50 70 0.70 0.40 0.60 0.8 60
EH60072 C2a 40 70 90 0.10 0.06 0.08 1.7 50
EH60074 C2a 50 70 90 0.20 0.12 0.17 1.4 60
EH60076 C2a 80 70 90 0.45 0.23 0.40 0.9 100
EH60102 C2a 50 90 120 0.10 0.06 0.08 1.7 150
EH60104 C2a 70 90 120 0.20 0.12 0.17 1.2 250
EH60106 C2a 110 90 120 0.45 0.23 0.40 0.8 400

(1) Other values of capacitance available on request

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 SILICON PIN DIODES
Microwave applications

PACKAGED DIODES NOMINAL MICROWAVE CHARACTERISTICS

Thermal Threshold Leakage Insertion Peak CW power

Characteristics at 25°C resistance power loss power
RTH PL PIN PIN
POUT L
Pdiss = 1W f = 2.7 GHz f = 2.7 GHz 1 µs
Test conditions 1dB f = 2.7 GHz PIN = -10 Pulse
case F 27d Limiting dBm 1% DC
Standard case (2) °C/W dBm dBm dB dBm W
Type Cb = 0.18 pF Cb = 0.12 pF
max typ. typ. typ. max max
(3) (3)
DH60033 F 27d M208 80 + 10 + 20 0.1 + 50 2.0
DH60034 F 27d M208 80 + 10 + 20 0.1 + 50 2.0
DH60035 F 27d M208 70 + 10 + 21 0.1 + 52 2.5
DH60036 F 27d M208 60 + 10 + 22 0.2 + 53 3.0
DH60037 F 27d M208 50 + 10 + 23 0.2 + 56 4.0
DH60052 F 27d M208 80 + 15 + 24 0.1 + 52 2.5
DH60053 F 27d M208 70 + 15 + 24 0.1 + 52 2.5
DH60054 F 27d M208 60 + 15 + 25 0.1 + 53 3.0
DH60055 F 27d M208 50 + 15 + 26 0.1 + 54 3.5
DH60056 F 27d M208 45 + 15 + 27 0.2 + 57 4.0
DH60057 F 27d M208 45 + 15 + 28 0.2 + 58 5.0
DH60072 F 27d M208 70 + 18 + 27 0.1 + 54 3.0
DH60074 F 27d M208 50 + 18 + 30 0.2 + 55 4.0
DH60076 F 27d M208 40 + 18 + 32 0.2 + 58 5.0
DH60102 F 27d M208 60 + 20 + 31 0.2 + 56 3.5
DH60104 F 27d M208 50 + 20 + 33 0.2 + 59 5.0
DH60106 F 27d M208 35 + 20 + 35 0.3 + 61 7.0

(2) Other capacitance values available on request Temperature ranges:

(3) CT = Cj +Cb Operating junction (Tj) : -55° C to +125° C
Storage : -65° C to +200° C

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SILICON SCHOTTKY DIODES
Selection guide

SILICON SCHOTTKY DIODES

Selection Guide

PAGE

SCHOTTKY BARRIER DETECTOR DIODES 12-29

SCHOTTKY BARRIER MIXER DIODES 12-30

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 SILICON SCHOTTKY DIODES
Silicon Schottky barrier detector diodes

SILICON SCHOTTKY BARRIER DETECTOR DIODES

Description

Silicon Schottky barrier detector diodes are available as:

• packaged diodes
• chip

They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.

Electrical characteristics packaged diodes

Frequency Tangential Video RF Forward

range sensitivity resistance power continuous Breakdown
voltage
Characteristics at 25°C currenT
Foper Tss RV PRF IF VBR

Test conditions N/A Video bandwidth = 1 MHz CW N/A IR = 10 µA

IF = 30 µA
dBm kΩ mW mA V
TYPE CASE (1) GHz
min. min. max max max typ.
DH340 F51 2 - 12 - 54 1 2 250 50 3
12 - 18 - 51

(1) Custom cases available on request Temperature ranges:

Operating junction (Tj) : -55° C to +150° C
Storage : -65° C to +175° C

Typical tangential sensitivity vs frequency

• T = + 25° C
• IF = 30 µA TSS
(dBm)
• Video bandwidth = 1 MHz
-56

-54

-52

-51
1 2 5 10 20
f (GHz)

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SILICON SCHOTTKY DIODES
Silicon Schottky barrier mixer diodes

SILICON SCHOTTKY BARRIER MIXER DIODES

Description

Silicon Schottky barrier mixer diodes are available in the following configurations:

• packaged
• chip

Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between
- 10 dBm and + 10 dBm. Medium barrier diodes are required for applications where the LO drive level
is between - 5 dBm and + 15 dBm. The use of a passivated planar construction contributes to high
reliability.

Electrical characteristics packaged diodes

Frequency SSB VSWR IF Breakdown Total

Characteristics Noise Impedance Test pulse
range voltage capacitance
at 25°C figure energy
Foper (ratio) ZIF VBR CTO
NFSSB
f = 30 MHZ F = 1 MHZ
Test conditions N/A (1) N/A I = 10 µA
PLO = 1 mW Pulse = 3 nS R VR = 0 V
Type Case (2) GHz dB ratio Ω Ergs V pF
max typ. max min. max max typ. typ.
DH301 F51 1-6 6.5 1.5 2 200 400 5 3 0.40
DH302 F51 1-6 6.0 1.5 2 200 400 5 3 0.40
DH303 F51 1-6 5.5 1.5 2 200 400 5 3 0.40
DH312 F51 6 - 12 7.0 1.5 2 200 400 5 3 0.25
DH313 F51 6 - 12 6.5 1.5 2 200 400 5 3 0.25
DH314 F51 6 - 12 6.0 1.5 2 200 400 5 3 0.25
DH315 F51 6 - 12 5.5 1.5 2 200 400 5 3 0.25
DH322 F51 12 - 18 7.5 1.5 2 200 400 5 3 0.17
DH323 F51 12 - 18 7.0 1.5 2 200 400 5 3 0.17
DH324 F51 12 - 18 6.5 1.5 2 200 400 5 3 0.17
DH325 F51 12 - 18 6.0 1.5 2 200 400 5 3 0.17

RF Power max: 250 mW CW Temperature ranges:

Operating junction (Tj) : -55° C to +150° C
(1) Noise figure measurement conditions: Storage : -65° C to +175° C
PLO = 1 mW
fIF = 30 MHz
NFIF = 1.5 dB
noise tube: 15.6 dB
dc load = 10 Ω
test frequencies: 3.0, 9.3 or 15.0 GHz
(2) Custom cases available on request

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 TUNING VARACTOR
Selection guide

TUNING VARACTOR

Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 12-32

HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

- VBR = 30 V 12-34

- VBR = 45 V 12-35

SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 12-36

MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 12-39

A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.

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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor

SOT23 SURFACE MOUNT SILICON ABRUPT

TUNING VARACTOR

Description

This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.

Applications

The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.

NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:

Cj (Vr) = Cj (0 V)

[ ]
γ
1 + Vr
φ

Vr : Reverse voltage
φ : Built-in potential .7V for Si
γ : .5 for abrupt tuning varactor

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 TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor

Electrical characteristics at Ta = +25° C

Reverse breakdown voltage, Vb = @10 µA: 30 V min.
Breakdown Junction Tuning Figure
Electrical
voltage capacitance ratio of merit
parameters
VBR Cj Q
F = 1 MHz VR = 4 V
Test Conditions IR = 10 µA Cj0V/Cj30V
VR = 4 V F = 50 MHz
V pF
Type typ. typ.
min. (1)

DH71010 30 1.0 ± 20% 4.0 4300

DH71016 30 1.6 ± 20% 4.5 4100
DH71020 30 2.0 ± 20% 4.6 3900
DH71030 30 3.0 ± 20% 4.7 3400
DH71045 30 4.5 ± 20% 4.8 2200
DH71067 30 6.7 ± 10% 4.9 2600
DH71100 30 10 ± 10% 5.0 2200
(1) Other tolerance on request

Temperature ranges:

Operating junction (Tj): -55° C to +125° C Storage: -65° C to +150° C

Packages

SOD323 SOT23 SOT23 SOT23 SOT143

Packages

DH71010 DH71010-60 DH71010-51 DH71010-53 DH71010-54 DH71010-70

DH71016 DH71016-60 DH71016-51 DH71016-53 DH71016-54 DH71016-70
DH71020 DH71020-60 DH71020-51 DH71020-53 DH71020-54 DH71020-70
DH71030 DH71030-60 DH71030-51 DH71030-53 DH71030-54 DH71030-70
DH71045 DH71045-60 DH71045-51 DH71045-53 DH71045-54 DH71045-70
DH71067 DH71067-60 DH71067-51 DH71067-53 DH71067-54 DH71067-70
DH71100 DH71100-60 DH71100-51 DH71100-53 DH71100-54 DH71100-70
(1) Other configuration available on request.
How to order?

DH71010 - 51 T3

Diode type Package Conditioning

information
51: single SOT23 T3: 3000 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143

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TUNING VARACTOR
High Q silicon abrupt junction tuning varactor

HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

VBR 30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.

CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES (1)

VBR (10 µA) ≥ 30 V Standard cases Other cases
Gold junction Fig. of Tuning Tuning
Characteristics at 25°C dia capacitance merit ratio ratio
Ø Cj Q CTO/CT30 CTO/CT30
CASE CASE
VR = 4 V VR = 4 V CAPACITANCE CAPACITANCE
Test Conditions
f = 1 MHZ f = 50 MHZ Cb Cb

Type Case µm pF Type Case Case

typ. ± 20 % (2) min. Cb= 0.18 pF (3) min. Cb= 0.12 pF (3) min.
EH71004 C2a 50 0.4 4500 DH71004 F27d 3.0 M208 3.3
EH71006 C2a 60 0.6 4500 DH71006 F27d 3.4 M208 3.7
EH71008 C2a 70 0.8 4400 DH71008 F27d 3.7 M208 4.0
EH71010 C2a 80 1.0 4300 DH71010 F27d 4.0 M208 4.3
EH71012 C2a 90 1.2 4200 DH71012 F27d 4.3 M208 4.5
EH71016 C2a 100 1.6 4100 DH71016 F27d 4.5 M208 4.6
EH71020 C2a 110 2.0 3900 DH71020 F27d 4.6 M208 4.7
EH71025 C2a 120 2.5 3600 DH71025 F27d 4.6 M208 4.8
EH71030 C2a 140 3.0 3400 DH71030 F27d 4.7 M208 4.8
EH71037 C2a 150 3.7 3200 DH71037 F27d 4.7 M208 4.8
EH71045 C2a 170 4.5 3000 DH71045 F27d 4.8 M208 4.9
EH71054 C2a 180 5.4 2800 DH71054 F27d 4.8 M208 4.9
± 10 % (2) Cb= 0.18 pF (3) Cb= 0.2 pF (3)
EH71067 C2a 200 6.7 2600 DH71067 F27d 4.9 BH142 4.9
EH71080 C2b 220 8.0 2400 DH71080 F27d 5.0 BH142 5.0
EH71100 C2b 250 10.0 2200 DH71100 F27d 5.0 BH142 5.0
EH71120 C2b 270 12.0 2000 DH71120 F27d 5.1 BH142 5.1
EH71150 C2b 300 15.0 1800 DH71150 F27d 5.1 BH142 5.1
EH71180 C2b 330 18.0 1700 DH71180 F27d 5.2 BH142 5.2
EH71200 C2b 350 20.0 1500 DH71200 F27d 5.2 BH142 5.2
EH71220 C2b 370 22.0 1400 DH71220 F27d 5.2 BH142 5.2
EH71270 C2b 410 27.0 1300 DH71270 F27d 5.2 BH142 5.2
EH71330 C2c 450 33.0 1200 DH71330 F27d 5.2 BH142 5.2
EH71390 C2c 500 39.0 950 DH71390 F27d 5.2 BH142 5.2
EH71470 C2c 540 47.0 750 DH71470 F27d 5.2 BH142 5.2
EH71560 C2c 590 56.0 650 DH71560 F27d 5.2 BH142 5.2
EH71680 C2c 650 68.0 500 DH71680 F27d 5.2 BH142 5.2
EH71820 C2d 720 82.0 400 DH71820 F27d 5.2 BH142 5.2
EH71999 C2d 800 100.0 300 DH71999 F27d 5.2 BH142 5.2
(1) Custom cases available on request Temperature ranges:
(2) Closer capacitance tolerances available on request Operating junction (Tj) : -55° C to +150° C
(3) CT = Cj + Cb Storage : -65° C to +175° C

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 TUNING VARACTOR
High Q silicon abrupt junction tuning varactor

VBR 45 V
Description
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.

Chip diodes Chip and packaged diodes Packaged diodes (1)

VBR (10 µA) ≥ 45 V STANDARD CASES OTHER CASES
GOLD Junction Fig. of Tuning Tuning
Characteristics at 25° C DIA Capacitance Merit Ratio Ratio
Ø Cj Q CTO/CT45 CTO/CT45
Case Case
VR = 4 V VR = 4 V
Test conditions Capacitance Capacitance
f = 1 MHZ f = 50 MHZ Cb Cb
Type Case µm pF Type Case Case
typ. ± 20 % (2) min. Cb = 0.18 pF (3) min. Cb = 0.12 pF (3) min.
EH72004 C2a 60 0.4 3000 DH72004 F27d 3.5 M208 3.7
EH72006 C2a 80 0.6 2900 DH72006 F27d 3.9 M208 4.1
EH72008 C2a 90 0.8 2800 DH72008 F27d 4.2 M208 4.5
EH72010 C2a 110 1.0 2700 DH72010 F27d 4.5 M208 4.7
EH72012 C2a 110 1.2 2700 DH72012 F27d 4.7 M208 4.9
EH72016 C2a 120 1.6 2600 DH72016 F27d 5.0 M208 5.2
EH72020 C2a 140 2.0 2500 DH72020 F27d 5.2 M208 5.5
EH72025 C2a 150 2.5 2400 DH72025 F27d 5.4 M208 5.6
EH72030 C2a 170 3.0 2300 DH72030 F27d 5.5 M208 5.7
EH72037 C2a 190 3.7 2200 DH72037 F27d 5.6 M208 5.7
EH72045 C2a 210 4.5 2000 DH72045 F27d 5.7 M208 5.8
EH72054 C2a 230 5.4 1900 DH72054 F27d 5.8 M208 5.9
± 10 % (2) Cb =0.18pF (3) Cb = 0.2pF (3)
EH72067 C2b 250 6.7 1800 DH72067 F27d 5.9 BH142 6.0
EH72080 C2b 280 8.0 1700 DH72080 F27d 5.9 BH142 6.0
EH72100 C2b 310 10.0 1600 DH72100 F27d 6.0 BH142 6.0
EH72120 C2b 340 12.0 1500 DH72120 F27d 6.0 BH142 6.0
EH72150 C2b 380 15.0 1400 DH72150 F27d 6.0 BH142 6.0
EH72180 C2b 420 18.0 1300 DH72180 F27d 6.0 BH142 6.0
EH72200 C2b 440 20.0 1200 DH72200 F27d 6.0 BH142 6.0
EH72220 C2c 470 22.0 1100 DH72220 F27d 6.0 BH142 6.0
EH72270 C2c 520 27.0 1000 DH72270 F27d 6.0 BH142 6.0
EH72330 C2c 570 33.0 900 DH72330 F27d 6.0 BH142 6.0
EH72390 C2c 620 39.0 800 DH72390 F27d 6.0 BH142 6.0
± 10 % (2) Cb = 0.18 pF (3)
EH72470 C2d 680 47.0 700 DH72470 BH28 6.0
EH72560 C2d 740 56.0 600 DH72560 BH28 6.0
EH72680 C2d 820 68.0 450 DH72680 BH28 6.0
± 10 % (2) Cb = 0.4 pF (3)
EH72820 C2g 900 82.0 350 DH72820 BH141 6.0
EH72999 C2g 1000 100.0 250 DH72999 BH141 6.0
(1) Custom cases available on request Temperature ranges:
(2) Closer capacitance tolerances available on request Operating junction (Tj) : -55° C to +150° C
(3) CT = Cj + Cb Storage : -65° C to +175° C

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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor

PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT

TUNING VARACTOR

Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. This family is designed for a low cost medium to high volume market that
may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.

Application
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical
applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly)
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase
shifters, delay lines...

20 Volt hyperabrupt junction varactors

Characteristics @ Ta=+25° C Temperature ranges:
Reverse breakdown voltage, Vb = 20 V min. @ 10 µA Operating junction (Tj) : -55° C to +125° C
Reverse Current, Ir = 200 nA @ 16 V Storage : -55° C to +150° C
Total capacitance (pF) Tuning
Ct ratio
Test f = 1 MHz f = 1 MHz f=1 MHz f = 1 MHz Ct1V/Ct12V Ct1V/Ct20V
conditions Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V f = 1 MHz f = 1 MHz
Type typ ±20 % typ. typ. typ. typ.
DH76010 2.5 1.2 0.6 0.5 4.1 4.9
DH76015 3.6 1.7 0.8 0.7 4.4 5.4
DH76022 5.2 2.4 1.1 0.9 4.7 5.8
DH76033 8.0 3.5 1.6 1.3 4.9 6.1
DH76047 11.0 4.9 2.2 1.7 5.0 6.4
DH76068 16.0 7.0 3.1 2.4 5.1 6.5
DH76100 23.0 10.0 4.5 3.5 5.2 6.7
DH76150 35.0 15.0 6.6 5.1 5.2 6.8

12 Volt hyperabrupt junction varactors

Characteristics @ Ta=+25° C Temperature ranges:
Reverse breakdown voltage, Vb = 12 V min. @ 10 µA Operating junction (Tj) : -55° C to +125° C
Reverse Current, Ir = 200 nA @ 8 V Storage : -55° C to +150° C
Total capacitance (pF) Tuning
Ct ratio
Test f = 1 MHz f = 1 MHz f=1 MHz Ct1V/Ct2.5V Ct1V/Ct4V
conditions Vr = 1 V Vr = 2.5 V Vr = 4 V f = 1 MHz f = 1 MHz
Type typ ±20 % typ. typ. typ.
DH77033 6.0 3.5 1.9 1.7 3.1
DH77047 8.5 4.9 2.7 1.7 3.2
DH77068 12.0 7.0 3.8 1.7 3.2
DH77100 18.0 10.0 5.5 1.7 3.2
DH77150 27.0 15.0 8.1 1.8 3.3

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 TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor

Typical junction capacitance versus reverse voltage

Profils in Cj
100.00

10.00
76010
76015
76022
76033
Cj (pF)

76047
76068
76100
76150

1.00
0.01 0.1 10 100

0.10
VR (V)

100
Cj (pF)

10

DH77033
DH77047
DH77068
DH77100
DH77150 1
0.1 1 10
V (V)

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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor

Packages

SOD323 SOT23 SOT23 SOT23 SOT143

Packages

DH76010 DH76010-60 DH76010-51 DH76010-53 DH76010-54 DH76010-70

DH76015 DH76015-60 DH76015-51 DH76015-53 DH76015-54 DH76015-70
DH76022 DH76022-60 DH76022-51 DH76022-53 DH76022-54 DH76022-70
DH76033 DH76033-60 DH76033-51 DH76033-53 DH76033-54 DH76033-70
DH76047 DH76047-60 DH76047-51 DH76047-53 DH76047-54 DH76047-70
DH76068 DH76068-60 DH76068-51 DH76068-53 DH76068-54 DH76068-70
DH76100 DH76100-60 DH76100-51 DH76100-53 DH76100-54 DH76100-70
DH76150 DH76150-60 DH76150-51 DH76150-53 DH76150-54 DH76150-70
DH77033 DH77033-60 DH77033-51 DH77033-53 DH77033-54 DH77033-70
DH77047 DH77047-60 DH77047-51 DH77047-53 DH77047-54 DH77047-70
DH77068 DH77068-60 DH77068-51 DH77068-53 DH77068-54 DH77068-70
DH77100 DH77100-60 DH77100-51 DH77100-53 DH77100-54 DH77100-70
DH77150 DH77150-60 DH77150-51 DH77150-53 DH77150-54 DH77150-70

(1) Other configuration available on request.

How to order?

DH76150 - 51 T3

Diode type Package Conditioning

information
51: single SOT23 T3: 3000 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143

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 TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor

HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR

Description

This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.

Characteristics @ Ta = +25° C

Reverse breakdown voltage, Vb = @ 10 µA: 20 V min.

Reverse current, Ir @ 16 V: 200 nA

Figure of Total capacitance (pF) Tuning

merit (Q) Ct ratio
Test f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Ct1V/Ct12V Ct1V/CT20V
conditions Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V f = 1 MHz f = 1 MHz
Type Case (1) typ. typ. ±20% typ. typ. typ. typ. Chip
DH76010 F27d 2200 2.5 1.2 0.6 0.5 4.1 4.9 EH76010
DH76015 F27d 2000 3.6 1.7 0.8 0.7 4.4 5.4 EH76015
DH76022 F27d 1700 5.2 2.4 1.1 0.9 4.7 5.8 EH76022
DH76033 F27d 1400 7.7 3.5 1.6 1.3 4.9 6.1 EH76033
DH76047 F27d 1000 11 4.9 2.2 1.7 5.0 6.4 EH76047
DH76068 F27d 700 16 6.9 3.0 2.4 5.1 6.5 EH76068
DH76100 F27d 400 23 10.2 4.5 3.5 5.2 6.7 EH76100
DH76150 F27d 140 34 15.2 6.6 5.1 5.2 6.8 EH76150

(1) Custom cases available on request Temperature ranges:

Operating junction (Tj) : -55° C to +150° C
Storage : -65° C to +150° C

Typical junction capacitance reverse voltage

Profils in Cj
100.00

10.00
76010
76015
76022
76033
Cj (pF)

76047
76068
76100
76150

1.00
0.01 0.1 10 100

0.10
VR (V)

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POWER GENERATION DIODES
Selection guide

POWER GENERATION DIODES

Selection Guide

PAGE

STEP RECOVERY DIODES

- STANDARD 12-42

- SURFACE MOUNT PLASTIC PACKAGES 12-43

SILICON MULTIPLIER VARACTORS 12-45

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 POWER GENERATION DIODES
Step recovery diodes and multiplier varactor applications

STEP RECOVERY DIODES AND MULTIPLIER

VARACTOR APPLICATIONS

A Step Recovery Diode (SRD) generates pulses that can be used to multiply frequencies, and to set up
reference points, e.g. for synchronizing test instruments.

This device operates by alternately producing and consuming a charge, based on the frequency of its
input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias,
the SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the
SRD snaps off, i.e. very quickly reverts to zero conduction.

This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming
pulses at a repetition rate equal to the frequency of its input.

The output of a step recovery diode is most often used in two ways:

• a pulse train can be applied to resonant circuits, which provides output power at a frequency
above that of the original input,
• a pulse train can be used to develop a series of frequencies at multiples of the original input
frequencies.

Typical applications of step recovery diodes include oscillators, power transmitters and drivers,
for telecommunications, telemetry, radar and test equipment.

In choosing a SRD, the significant characteristics include:

Output Frequency (fo) ; Breakdown Voltage (VBR) ; Junction Capacitance (Cj) ; Minority Carrier Lifetime (τl);
Snap-off Time (tso) ; Thermal Resistance (Rth) and Output Power (Po).

Multiplier varactors

A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of
multiplying power.

Packages for multiplier varactors are designed to dissipate the power yield Power out
(
Power in (
Most of these packages hold from 2 to 4 chips, this type of components are available on customer
request.

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POWER GENERATION DIODES
Step recovery diodes (SRD)

STEP RECOVERY DIODES (S.R.D.)

Description

These diodes use mesa technology and oxide passivation. They support fast switching and multiplier
applications:

• very short pulse generation,

• ultra fast waveform shaping,

• comb generation,

• high order multiplication, at moderate power ratings.

Chip diodes Chip and packaged diodes Packaged diodes

Gold Breakdown Junction Min. car. Snap-Off Thermal
Characteristics dia voltage capacitance lifetime time resistance
at 25°C
∆ Vbr Cj tI tso Rth
Vr =6 V If =10mA If = 10 mA Pdiss = 1 W
Test conditions N/A Ir = 10 µA
f = 1 MHz Ir = 6 mA Vr = 10 V in F 27d
Type Case µm V pF ns ps Type Case (1) °C/W Other cases (1)
typ. min. max min. typ. max Cb =0.1pF max Cb =0.18pF Cb =0.12pF
(2) (2) (2)
EH541 C2a 160 30 1.5 25 90 140 DH541 A22e 30 F27d M208
EH542 C2a 220 50 1.5 40 150 250 DH542 A22e 25 F27d M208
EH543 C2a 110 30 1.0 20 90 140 DH543 A22e 40 F27d M208
EH544 C2a 140 50 1.0 35 150 250 DH544 A22e 35 F27d M208
EH545 C2a 55 25 0.4 10 75 100 DH545 A22e 70 F27d M208
EH546 C2a 40 15 0.3 6 60 80 DH546 A22e 100 F27d M208

(1) Custom cases available on request Temperature ranges:

(2) CT = Cj + Cb Operating junction (Tj) : -55° C to +150° C
Storage : -65° C to +175° C

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 POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes

PLASTIC PACKAGE SURFACE MOUNT S.R.D.

Description

Our SRD diodes are also available in plastic package. They incorporate a passivated mesa technology.
This family is designed for a low cost medium to high volume market that may be supplied in tape
and reel for automated pick and place assembly on surface mount circuit boards.

Application

The DH54X series support fast switching and multiplier applications:

• very short pulse generation

• ultra fast waveform shaping
• comb generation
• high order multiplication at moderate power ratings.

Temperature ranges

Operating junction (Tj) : -55°C to +125°C Storage : -55° C to +150° C

Junction Minority Snapp-Off

Breakdown
capacitance carrier time tso
Vbr (V)
Cj (pF) lifetime t l (ns) (ps)
Test Vr = 6 V If = 10 mA If = 10 mA
Ir = 10 µA
conditions f = 1 MHz Ir = 6 mA Vr = 10 V
Type min. max. min. typ. max.
DH541 30 1.5 25 90 140
DH542 50 1.5 40 150 250
DH543 30 1.0 20 90 140
DH544 50 1.0 35 150 250
DH545 25 0.4 10 75 100
DH546 15 0.3 6 60 80

Packages

SOD323 SOT23 SOT23 SOT23 SOT143

Packages

DH541 DH541-60 DH541-51 DH541-53 DH541-54 DH541-70

DH542 DH542-60 DH542-51 DH542-53 DH542-54 DH542-70
DH543 DH543-60 DH543-51 DH543-53 DH543-54 DH543-70
DH544 DH544-60 DH544-51 DH544-53 DH544-54 DH544-70
DH545 DH545-60 DH545-51 DH545-53 DH545-54 DH545-70
DH546 DH546-60 DH546-51 DH546-53 DH546-54 DH546-70

(1) Other configuration available on request.

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POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes

How to order?

DH541 - 51 T3

Diode type Package Conditioning

information
51: single SOT23 T3: 3000 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143

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 POWER GENERATION DIODES
Silicon multiplier varactor

SILICON MULTIPLIER VARACTORS

Description

These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power
levels (stack configuration) and/or at high multiplication orders.

Packaged diodes

Output Breakdown Junction Min. car. Snap-Off Thermal Power

Characteristics freq. voltage capacitance lifetime time resistance output
at 25°C Varactor Fo Vbr Cj τI tso Rth Po
chips IF = 10 mA IF = 10 mA
Test VR = 6 V
per N/A IR = 10 µA N/A fo = (n)fi
Conditions f = 1 MHz IR = 6 mA VR = 10 V
package
V pF ns ps °C/W W
Type Case GHz
min. max min. max min. max max typ. (n)
DH294 M208b 1 0.2 - 2 45 70 4.0 7.0 125 400 300 0.5 2
DH200 BH142b 1 0.5 - 2 90 140 5.5 7.0 250 1000 8 20.0 2
DH270 S268-W1 1 2-3 80 110 4.0 5.5 160 700 10 15.0 2
DH110 F27d 1 2-4 60 90 3.0 4.0 100 400 25 9.0 2
DH293 F60d 1 3-6 50 70 2.0 3.0 60 250 30 6.0 2
DH252 F27d 1 2-8 40 60 0.9 2.0 35 200 50 3.0 2
DH256 F27d 1 5 - 12 30 45 0.5 1.1 20 120 60 2.0 2
DH292 F27d 1 8 - 16 20 35 0.2 0.5 10 75 70 0.6 2
DH267 F27d 1 10 - 25 15 25 0.2 0.3 6 60 100 0.2 2

Temperature ranges:

Operating junction (Tj) : -55° C to +150° C

Storage : -65° C to +175° C

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 MICROWAVE SILICON COMPONENTS
Case styles

CASE STYLES
GENERAL PURPOSE SURFACE MOUNT DEVICES STRIP LINE / MICRO STRIP

PAGE PAGE PAGE

A22e .....................12-48 SMD3 ......................12-56 BH15 .....................12-48

BH28 .....................12-48 SMD4 ......................12-56 BH16 .....................12-48
BH32 .....................12-48 SMD6 ......................12-56 BH101 .....................12-49
BH35 .....................12-48 SMD8 ......................12-56 BH143 .....................12-50
BH142a .....................12-49 SOD323 ......................12-56 BH151 .....................12-50
BH142b .....................12-49 SOT23 ......................12-56 BH152 .....................12-50
BH142c .....................12-49 SOT143 ......................12-57 BH153 .....................12-50
BH142d .....................12-49 SOT323 ......................12-57 BH154 .....................12-50
BH142e .....................12-49 BH155 .....................12-50
POWER
BH142f .....................12-49 BMH76 .....................12-53
BH167 .....................12-51 PAGE
BH167s .....................12-51
BH141 ......................12-49
BH198 .....................12-51
BH158 ......................12-51
F27d .....................12-54
BH158am ......................12-51
F30 .....................12-54
BH200a ......................12-52
F51 .....................12-54
BH202 ......................12-52 CHIP vERSION
F54 .....................12-54
BH203a ......................12-52
F54s .....................12-55 PAGE
BH203b ......................12-52
F60 .....................12-55
BH203c ......................12-52 C2 .....................12-54
F60d .....................12-55
BH204 ......................12-52 C4 .....................12-54
M208a .....................12-55
BH300 ......................12-53
M208b .....................12-55
BH301 ......................12-53
M208c .....................12-55
BH303 ......................12-53
M208d .....................12-55
BH403a ......................12-53
M208e .....................12-55
BH405 ......................12-53
M208f .....................12-56
S268/W1 .....................12-56
TO39 .....................12-57
W2 .....................12-57

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MICROWAVE SILICON COMPONENTS
Case styles

Cb=0.1pF E ∅ 1.7 ∅ 2.1 .067 DIA .083 DIA Cb=0.1pF E 0.09 0.11 .0035 .0043
A22e D ∅ 0.35 ∅ 0.41 .014 DIA .016 DIA
BH15 D 0.28 0.48 .011 .019

C 25.4 1 C 3.82 4.58 .15 .18

E B
D E B 25.4 1 B 0.15 0.35 .006 .014

A 4 4.4 .157 .173 A 1.17 1.37 .046 .054

A C
SYM min. max min. max SYM min. max min. max
C A B
BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES
D

Cb=0.16pF E 0.08 0.12 .003 .005 Cb=0.2pF

BH16 D 0.45 0.55 .018 .022
BH28 C 2.04 2.50 .080 .098

B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA

C 4.58 5.58 .180 .220 A
A ∅ 3.00 ∅ 3.20 .118 DIA .126 DIA
B E B 0.66 0.86 .026 .034
SYM min. max min. max
A 2.4 2.6 .094 .102
C BOL MILLIMETERS INCHES
SYM min. max min. max C
D
BOL MILLIMETERS INCHES

A
B

Cb=0.2pF
Cb=0.25pF H 5.14 5.93 .202 .233

G 1.37 1.77 .054 .070

BH32 BH35
C 3.5 3.9 .138 .154 F 1.78 1.98 .070 .078
A C E 1.37 1.77 .054 .070
B ∅ 3.86 ∅ 4.26 .152 DIA .168 DIA
D
A ∅ 5.64 ∅ 6.04 .222 DIA .238 DIA D ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA

SYM min. max min. max G C ∅ 3.96 ∅ 4.16 .156 DIA .164 DIA

BOL MILLIMETERS INCHES B ∅ 3.05 ∅ 3.25 .120 DIA .128 DIA

C B
H F A ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA
SYM min. max min. max
E
BOL MILLIMETERS INCHES
B
A

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Case styles

Cb=0.15pF Cb=0.4pF F 0.70 .028

E 0.05 0.15 .002 .006
BH101 D 0.55 0.65 .022 .026
BH141 E 4.70 5.10 .185 .201

D 12.8 13.4 .504 .526

C 5 .197 A
B E F
C 6. 40 UNF-3A
B 0.28 0.48 .011 .019
E B ∅ 5.20 ∅ 5.40 .205 DIA .203 DIA
A 2.3 2.7 .091 .106
A
D SYM min. max min. max A ∅ 6.50 ∅ 6.70 .256 DIA .263 DIA
D

SYM min. max min. max

C BOL MILLIMETERS INCHES
A
BOL MILLIMETERS INCHES
C
B

Cb=0.2pF G 0.1 0.5 .004 .020 Cb=0.2pF

BH142a F 0.06 0.10 .0024 .0039 BH142b
E 0.55 0.65 .022 .026
B
D B D A
D 2.5 .098

C 2.10 2.70 .083 .106 B 1.24 1.58 .049 .062

C
B 1.24 1.58 .049 .062 A A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA

F G E A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA SYM min. max min. max

SYM min. max min. max BOL MILLIMETERS INCHES

BOL MILLIMETERS INCHES

Cb=0.2pF Cb=0.2pF
BH142c E 0.06 0.10 .0024 .0039 BH142d E 0.06 0.10 .0024 .0039
D 0.55 0.65 .022 .026 E D 0.55 0.65 .022 .026
B A A
C 5 .197 C 5 .197
B 1.24 1.58 .049 .062 B 1.24 1.58 .049 .062
A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA
SYM min. max min. max SYM min. max min. max
C C

E D BOL MILLIMETERS INCHES E D BOL MILLIMETERS INCHES

BH142e Cb=0.2pF E 0.06 0.10 .0024 .0019 BH142f Cb=0.2pF E 0.06 0.10 .0024 .0039

D 0.55 0.65 .022 .026 D 0.55 0.65 .022 .026

C 5 .197 C 10 .394
B A C A B
B 1.24 1.58 .049 .062 B 1.24 1.58 .049 .062

A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA
C

SYM min. max min. max SYM min. max min. max
E C BOL MILLIMETERS INCHES D
E
BOL MILLIMETERS INCHES
D

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MICROWAVE SILICON COMPONENTS
Case styles

Cb=0.1pF E 0.08 0.12 .003 .005 Cb=0.25pF

BH143 D 0.45 0.55 .094 .102 BH151
E 0.08 0.12 .003 .005
C 7.60 .299
D 0.35 0.45 .014 .018
C B 0.45 0.55 .018 .022
E
E
B C 3.70 4.30 .147 .169
A ∅ 2.40 ∅ 2.60 .094 .102
B A B 0.20 0.30 .008 .012
SYM min. max min. max
D A 1.17 1.37 .046 .054
BOL MILLIMETERS INCHES
SYM min. max min. max
D BOL MILLIMETERS INCHES
A C

Cb=0.05pF E 0.08 0.12 .003 .005 Cb=0.13pF

BH152 BH153 E 0.08 0.12 .003 .005
D 0.35 0.45 .014 .018
D 0.45 0.55 .018 .022
E
C 3.70 4.30 .147 .169
B E B
C 6.15 6.55 .242 .258
B 0.20 0.30 .008 .012 C C

B 0.91 1.01 .036 .040

A 1.17 1.37 .046 .054
A 1.68 1.88 .066 .074
SYM min. max min. max
A
SYM min. max min. max
D BOL MILLIMETERS INCHES D

A C BOL MILLIMETERS INCHES

BH154 Cb=0.13pF E 0.08 0.12 .003 .005 Cb=0.13pF

BH155
E 0.08 0.12 .003 .005
D 0.45 0.55 .018 .022
D 0.45 0.55 .018 .022
C 6.15 6.55 .242 .258
C 6.15 6.55 .242 .258
B 0.91 1.01 .036 .040
E B
C C B 0.91 1.01 .036 .040
A 1.68 1.88 .066 .074 E B
A SYM min. max min. max C C A 1.68 1.88 .066 .074
D
SYM min. max min. max
BOL MILLIMETERS INCHES
D BOL MILLIMETERS INCHES
A

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Case styles

Cb=0.4pF Cb=0.4pF
BH158 D 4.00 4.50 .157 .177 BH158am D 4.1 4.4 .16 .173

C ∅ 5.10 ∅ 5.50 .200 DIA .216 DIA C ∅ 5.2 ∅ 5.5 .204 DIA .216 DIA
A A

B 4.90 5.30 .193 .209 B 4.7 5.2 .185 .205

A ∅ 6.50 ∅ 6.70 .256 DIA .264 DIA A ∅ 5.7 ∅ 6.1 .224 DIA .240 DIA
SYM min. max min. max SYM min. max min. max
B B D
D
BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES

C
C

Cb=0.12pF G 1.86 2.06 .073 .081 Cb=0.12pF

BH167s F 0.71 0.81 .028 .032
F 0.71 0.81 .028 .032
BH167 E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA
A
E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA A D 1.55 1.75 .061 .069
E D 1.55 1.75 .060 .070
C ∅ 1.22 ∅ 1.32 .048 DIA .052 DIA
C ∅ 1.22 ∅ 1.32 .048 DIA 052 DIA
B 1.86 2.06 .073 .081
B 2.57 2.87 .101 .113
B A ∅ 1.42 ∅ 1.62 .056 DIA .064 DIA
A ∅ 1.42 ∅ 1.62 .056 DIA .064 DIA D
SYM min. max min. max
F
B SYM min. max min. max
G
BOL MILLIMETER INCHES
D BOL MILLIMETERS INCHES E
F C

Cb=0.6pF
BH198
4 (.157)
0.1 (.004)
2 (.079) L 4 .157
Cathod
D1 1.55 1.75 .06 .069
0.5 (.020)

2 (.079)

D 1.68 1.88 .066 .074

4 (.079)

Anode in C 0.07 0.15 .003 .006

B2 0.4 0.6 .016 .024

1.70 (.070)

B1 0.92 1.12 .036 .044

Cathod
A1 0.86 1.25 .034 .049
1.02 (.040) 1.25 (.049)max
A 0.66 0.86 .026 .034
SYM min. max min. max
Dimensions in mm (inches)
BOL MILLIMETER INCHES
Tg : ± 0.1 (.004)

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MICROWAVE SILICON COMPONENTS
Case styles

Cb=0.4pF L 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°
K 5.49 5.89 .216 .232 L 4.12 4.52 .162 .178
BH200a BH202
J ∅ 30.48 ∅ 31.50 1.200 DIA 1.240 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
I 6.30 6.40 .248 .252 J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
A
C H 18.26 18.67 .719 .735 D
I 1.25 1.29 .049 .051
E
G 24.64 24.89 .970 .980 A H 16.30 16.70 .642 .658
F ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA F G 6.30 6.40 .248 .252
B D B
E 0.10 0.127 .004 .005 L F 0.23 0.27 .009 .011
E C E 2.50 2..67 .098 .105
G D 6.78 7.19 .267 .283
I H
J C 3.86 4.27 .152 .168 K I D 18.26 18.67 .719 .735
J
B 2.50 2.667 .098 .105 C 24.64 24.89 .970 .980
A ∅ 12.50 ∅ 12.90 .492 DIA .508 DIA G B 6.78 7.19 .267 .283
K
SYM min. max min. max H A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA
L M
L M SYM min. max min. max
F
BOL MILLIMETERS INCHES
BOL MILLIMETERS INCHES

Cb=0.15pF M 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°

BH203a L 4.12 4.52 .162 .178 BH203b L 4.12 4.52 .162 .178
K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
D I 1.25 1.29 .049 .051 D I 1.25 1.29 .049 .051
A H 16.30 16.70 .642 .658 A H 16.30 16.70 .642 .658
F F

B G 6.30 6.40 .248 .252 B G 6.30 6.40 .248 .252

L L
C F 0.23 0.27 .009 .011 E C F 0.23 0.27 .009 .011
E
E 2.50 2.67 .098 .105 E 2.50 2.67 .098 .105
K K
I
J D 18.26 18.67 .719 .735 J D 18.26 18.67 .719 .735
H

G
C 24.64 24.89 .970 .980 G C 24.64 24.89 .970 .980
B 6.78 7.19 .267 .283 B 6.78 7.19 .267 .283

M H A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA M M A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA
M I
SYM min. max min. max SYM min. max min. max

BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES

Cb=0.15pF M 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°

BH203c L 4.12 4.52 .162 .178 BH204 L 4.12 4.52 .162 .178
K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
D
D
I 1.25 1.29 .049 .051 I 1.25 1.29 .049 .051
A
A H 16.30 16.70 .642 .658 F H 16.30 16.70 .642 .658
F
G 6.30 6.40 .248 .252 B L G 6.30 6.40 .248 .252
B L
F 0.23 0.27 .009 .011 E C F 0.23 0.27 .009 .011
E C
E 2.50 2.67 .098 .105 I E 2.50 2.67 .098 .105
K
K I
J
D 18.26 18.67 .719 .735 J D 18.26 18.67 .719 .735

G
C 24.64 24.89 .970 .980 G C 24.64 24.89 .970 .980
B 6.78 7.19 .267 .283 B 6.78 7.19 .267 .283
M M
H A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA M M H
A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA
SYM min. max min. max SYM min. max min. max

BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES

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 MICROWAVE SILICON COMPONENTS
Case styles

Cb=0.2pF
Cb=0.4pF
BH300 BH301
J 1.52 1.62 .060 .064
I 3.25 3.45 .128 .136
I 2.82 3.02 .111 .119
H 5.60 6.00 .220 .236
A A H 4.42 4.82 .174 .190
G 6 - 32 UNC - 3A
G 4 - 40 UNC - 3A
F 2.97 3.38 .177 .133 E I B F 2.16 2.56 .85 .101
E I E 0.20 0.30 .008 .012 J
B
H E 0.18 0.20 .007 .008
H D 20 - .787 -
D 15.67 16.18 .617 .637
C 6.30 6.40 .248 .252 G
G
C C 4.70 4.80 .185 .189
B 13.95 15.05 .549 .593
F B 9.46 10.54 .372 .415
F A ∅ 6.5 ∅ 6.7 .256 DIA .264 DIA
D A ∅ 3.00 ∅ 3.20 .118 DIA .126 DIA
D C SYM min. max min. max
SYM min. max min. max
BOL MILLIMETERS INCHES
BOL MILLIMETERS INCHES

Cb=0.4pF I 3.25 3.45 .128 .136 Cb=0.3pF N - 3 - .120

BH303 H 5.60 6.00 .220 .236 M Typical: 45°
G 6 - 32 UNC - 3A BH403a L 9.68 10.08 .381 .397
A F 2.97 3.38 .177 .133 K ∅ 10.46 ∅ 10.87 .412 DIA .428 DIA
E E 0.20 0.30 .008 .012 J 2.72 3.12 .107 .123
I B D 20 - .787 - A E I 1.57 1.98 .062 .078
H H
C 6.30 6.40 .248 .252 F B K
H 0.10 0.15 .004 .006
L
C
F G B 13.95 15.05 .549 .593 J G 1.78 2.03 .070 .080
A ∅ 6.5 ∅ 6.7 .256 DIA .264 DIA D
F 4.39 4.64 .173 .183
I
SYM min. max min. max E 1.90 2.16 .075 .085
D M
C BOL MILLIMETERS INCHES G
D 25.4 - 1 -
N
C 10 - 32 UNF 3A
B ∅ 12.50 ∅ 12.90 .492 DIA .508
A 18.67 19.43 .735 .765
SYM min. max min. max

BOL MILLIMETERS INCHES

Cb=0.4pF J 0.97 1.07 .038 .042

Cb=0.15pF K 0.50 0.70 .020 .028
I 2.49 2.59 .098 .102 J 0.20 0.24 .008 .010
BH405
H 2.9 3.1 .114 .122 BMH76 I 1.95 2.15 .077 .085
G 22.4 22.6 .882 .890 H 1.47 1.67 .058 .066
H B
F F 0.20 0.30 .0079 .0118 G 5.1 5.3 .201 .209
I J
B G E 6.1 6.5 .240 .256 H F 3.18 3.68 .125 .145
J E
C
D 9.2 9.6 .362 .378 E ∅ 2.36 ∅ 2.52 .093 DIA .099 DIA
A
C 5/16 - 24 UNF - 2A K D 3.1 3.3 .122 .130
D
B 14 14.2 .551 .559 A C 4 4.2 .157 .165
I
E G
A ∅ 19.6 ∅ 19.8 .772 DIA .780 DIA G D B 3.02 3.22 .119 .127
D
SYM min. max min. max A 10.3 10.5 .406 .413
I SYM min. max min. max
BOL MILLIMETERS INCHES
F C F BOL MILLIMETERS INCHES

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MICROWAVE SILICON COMPONENTS
Case styles

C2J 1740 1800 68.50 70.87 C4

C2 C2H 1440 1500 56.69 59.06 C4G 1500 2500 59.06 98.43

C2G 1140 1200 44.88 47.24 C4F 1000 1500 39.37 59.06
Ø
C2E 940 1000 37.01 39.37 C4E 700 1000 27.56 39.37

C2D 840 900 33.07 35.43 C4D 500 700 19.69 27.56

C2C 740 800 29.13 31.50 C4C 400 500 15.75 19.69

C2B 540 600 21.26 23.62 C4B 300 400 11.81 15.75

C2A 340 400 13.39 15.75 A

C4A 200 300 7.87 11.81
A

CON min. max min. max CON min. max min. max
A A
FIG A (µm) A (µ”) FIG A (µm) A (µ”)

F27d Cb=0.18pF
H ∅ 2.01 ∅ 2.05 .079 DIA .081 DIA
G
G ∅ 2.95 ∅ 3.15 .116 DIA .124 DIA F30 Cb=0.25pF
F
F ∅ 1.55 ∅ 1.59 .061 DIA .063 DIA D 0.4 0.6 .016 .024

E ∅ 1.55 ∅ 1.59 .061 DIA .063 DIA

A C 1.4 1.6 .055 .063
C

D 5.15 5.65 .202 .222 B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA

H
C 1.55 1.59 .061 .063
D
A ∅ 2.94 ∅ 3.14 .116 DIA .124 DIA
D
B
C SYM min. max min. max
B 1.74 1.82 .069 .072
BOL MILLIMETERS INCHES
A A 1.55 1.59 .061 .063
B
SYM min. max min. max
E
BOL MILLIMETERS INCHES

F51 Cb=0.1pF Cb=0.2pF

F54 F 1.0 1.2 .039 .047
C D 1.47 1.67 .058 .066
A E 0.40 0.47 .016 .019
C ∅ 1.47 ∅ 1.67 .058 DIA .066 DIA
D
D ∅ 0.61 ∅ 0.66 .024 DIA .029 DIA
D B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA
C ∅ 1.19 ∅ 1.35 .047 DIA .053 DIA
A 4.9 5.3 .193 .209
B 1.70 2.00 .067 .079
B
A SYM min. max min. max E

F
A ∅ 2.00 ∅ 2.16 .079 DIA .085 DIA
BOL MILLIMETERS INCHES
SYM min. max min. max
D
BOL MILLIMETER INCHES
C

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Case styles

Cb=0.2pF Cb=0.2pF F 1.51 1.63 .059 .064

D 0.36 0.46 .014 .018 F60
F54s E 1.81 1.95 .071 .077
C 0.84 0.94 .073 .047 A
A
D 3.76 4.21 .148 .166
B ∅ 1.19 ∅ 1.35 .047 DIA .053 DIA
C ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA
A ∅ 2.00 ∅ 2.16 .079 DIA .085 DIA
∅ 1.93 ∅ 2.13 .076 DIA .084 DIA
D E
B
SYM min. max min. max
C
BOL MILLIMETERS INCHES
D A ∅ 2.95 ∅ 3.15 .116 DIA .124 DIA
F
SYM min. max min. max

B BOL MILLIMETER INCHES

C

Cb=0.12pF G 0.1 0.4 .004 .015

F60d Cb=0.25pF M208a
F 1.52 1.64 .060 .065 F 0.06 0.1 .0024 .004
A E 0.95 1.09 .037 .043 E 0.55 0.65 .022 .026
D 2.91 3.36 .115 .132 D 2.5 .100
D B D A
C ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA C 1.3 1.7 .052 .068
E
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA C B 0.95 1.35 .037 .053
∅ 2.95 ∅ 3.15 .116 DIA .124 DIA
D
A F G A ∅ 1,07 ∅ 1,47 .042 DIA .058 DIA
F
E
SYM min. max min. max SYM min. max min. max
BOL MILLIMETER INCHES BOL MILLIMETER INCHES
C

Cb=0.12pF E 0.06 0.1 .0024 .004

M208c
M208b D 0.55 0.65 .022 .026
Cb=0.12pF B
A
D
C 5 .200
B
A B 0.95 1.35 .037 .053
B 0.95 1.35 .037 .053
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA
SYM min. max min. max
SYM min. max min. max C
BOL MILLIMETERS INCHES
BOL MILLIMETERS INCHES
E

Cb=0.12pF Cb=0.12pF
M208d M208e
E 0.06 0.1 .0024 .004 E 0.06 0.1 .0024 .004
D B
A D 0.55 0.65 .022 .026 E
D 0.55 0.65 .022 .026
D
C 5 .200 C 5 .200
C
B
B 0.95 1.35 .037 .053 B 0.95 1.35 .037 .053
A
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA
C

SYM min. max min. max SYM min. max min. max
E
BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES
C

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MICROWAVE SILICON COMPONENTS
Case styles

Cb=0.12pF Cb=0.2pF I 0.38 0.62 .015 .024

M208f S268/W1
H 0.64 0.88 .025 .035

F 0.06 0.1 .0024 .004 G 0.51 0.60 .020 .024

E F
E 0.55 0.65 .022 .026 F ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA
B
B D 5 .200 E 0.21 0.31 .008 .012
D
A
E
C 9.8 10.2 .392 .408 D 1.71 2.00 .067 .079
C

B 0.95 1.35 .037 .053 I C 3 - 48 UNC 2A

C F A
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA B 5.01 5.46 .197 .215
D
SYM min. max min. max A ∅ 2.85 ∅ 3.25 .112 DIA .128 DIA
H G

BOL MILLIMETER INCHES SYM min. max min. max

BOL MILLIMETER INCHES

Cb=0.11pF E 2.69 2.89 .106 .114 Cb=0.24pF E Typical 0,2 Typical .008
SMD3
D 3.71 3.91 .146 .154 D Typical 1 Typical .039
A SMD4
C 4.4 4.6 .173 .181 C 0.3 0.8 .012 .031
B B ∅ 2.19 ∅ 2.39 .086 DIA .094 DIA B 2.9 3.5 .114 .138
A
A ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA A 2 2.3 .079 .091

SYM min. max min. max SYM min. max min. max

BOL MILLIMETERS INCHES C BOL MILLIMETERS INCHES

E
D C
B
E

Cb=0.24pF E Typical 0,20 Typical .008

SMD6
D Typical 1.20 Typical .047
SMD8

A
C 0.3 0.8 .012 .031
B 4.70 5.2 .185 .205
A

B 4.70 5.2 .185 .205

A 2.5 2.8 .098 .110 C 0.20 0.38 .008 .015

SYM min. max min. max
C

SYM min. max min. max

A

BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES

B

C
E

B
D

Cb=0.2pF
SOD323 SOT23
K 0.1 0.13 0.004 0.005
H 1.70 .0669 D J 0.53 0.56 0.021 0.022
B C F
G 0.20 .0078 I 0.05 0.1 0.002 0.0004
F 0.15 .0059 H 1.07 1.14 0.042 0.045
B C
E 0.05 .0020 G 0.43 0.46 0.017 0.018
D 0.30 .0118 F 1.78 2.04 0.070 0.080
A H C
G
C 1.10 .043 E 0.94 typ. 0.037 typ.
A
B 1.25 .049 D 0.43 0.45 0.017 0.020
F A 2.50 .098 H
C 2.36 2.49 0.093 0.098
D G I
K
SYM Typical Typical J B 1.3 1.35 0.051 0.053
E
BOL MILLIMETERS INCHES A 2.84 3.02 0.112 0.119
SYM min. max min. max
BOL Millimeters Millimeters Inches Inches

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 MICROWAVE SILICON COMPONENTS
Case styles

SOT143 SOT323
J max 8° K 0.12 .0047
I 0.10 .0039 J 0.43 .017
D
H 0.12 .0047 F I 0.1 max. .004 max.
A
G
J G 1.90 .0075 H 0.9 .035
F 0.40 .0157 G 0.3 .012

C
4 3 H
E 0.80 .0315 F 1.3 .051
B D D 1.30 .051 G E E 0.65 .026
I C 1.10 .043 D 0.3 .012
1 2 A
B 2.60 .102 C 2.1 .0.83
E F C

H
A 2.90 .114 B 1.25 .043

K
I
SYM Typical Typical A 1.9 .075
J
BOL MILLIMETERS INCHES SYM Typical Typical

BOL MILLIMETERS INCHES

Cb=0.2pF
TO39
I ∅ 8.3 ∅ 8.5 .327 DIA .335 DIA

H ∅ 0.41 ∅ 0.48 .016 DIA .019 DIA

G 44° 46° 44° 46°

F 0.71 0.81 .028 .032

E 9.40 10.40 .370 .409

D 12.7 .500
G C 4.98 5.18 .196 .204
E F
B 6.30 6.40 .248 .252

I A ∅ 9.10 ∅ 9.30 .358 DIA .366 DIA

A C
H SYM min. max min. max
D B
BOL MILLIMETER INCHES

Cb=0.15pF
W2
H 0.71 0.81 .028 .032

G 0.45 0.55 .020 .022

F 3 - 48 UNC - 3A
E
F H E 0.61 0.81 .024 .032

D ∅ 1.17 ∅ 1.37 .046 DIA .054 DIA

B D G
C 3.40 3.60 .134 .142

B ∅ 2.46 ∅ 2.66 .097 DIA .105 DIA

C A 4.38 4.68 .172 .184

A
SYM min. max min. max

BOL MILLIMETERS INCHES

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