TSM60NB190CF

Taiwan Semiconductor

N-Channel Power MOSFET

600V, 18A, 0.19Ω

FEATURES KEY PERFORMANCE PARAMETERS

● Super-Junction technology PARAMETER VALUE UNIT
● High performance, small RDS(ON)*Qg figure of merit (FOM)
VDS 600 V
● High ruggedness performance
RDS(on) (max) 0.19 Ω
● 100% UIS and Rg tested
● Compliant to RoHS Directive 2011/65/EU and in Qg 32 nC
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21

APPLICATIONS
● Power Supply
● AC/DC LED Lighting

ITO-220S

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V

(Note 1)
TC = 25°C 18 A
Continuous Drain Current ID
TC = 100°C 11 A
(Note 2)
Pulsed Drain Current IDM 54 A
Total Power Dissipation @ TC = 25°C PD 59.5 W
(Note 3)
Single Pulse Avalanche Energy EAS 441 mJ
(Note 3)
Single Pulse Avalanche Current IAS 4.2 A
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C

THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Case Thermal Resistance RӨJC 2.1 °C/W
Junction to Ambient Thermal Resistance RӨJA 62 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.

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ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V
Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3.2 4 V
Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA
Drain-Source On-State Resistance
(Note 4) VGS = 10V, ID = 3.7A RDS(on) -- 0.17 0.19 Ω
(Note 5)
Dynamic
Total Gate Charge Qg -- 32 --
VDS = 480V, ID = 11A,
Gate-Source Charge Qgs -- 8 -- nC
VGS = 10V
Gate-Drain Charge Qgd -- 14 --
Input Capacitance Ciss -- 1311 --
VDS = 100V, VGS = 0V,
Output Capacitance Coss -- 71 -- pF
f = 1.0MHz
Reverse Transfer Capacitance Crss -- 4 --
Gate Resistance f = 1.0MHz Rg -- 3 6 Ω
(Note 6)
Switching
Turn-On Delay Time td(on) -- 11 --
VDD = 300V,
Turn-On Rise Time tr -- 34 --
RGEN = 5Ω, ns
Turn-Off Delay Time td(off) -- 26 --
ID = 11A, VGS = 10V,
Turn-Off Fall Time tf -- 17 --
Source-Drain Diode
Body-Diode Continuous Forward Current IS -- -- 18 A
Body-Diode Pulsed Current ISM -- -- 54 A
(Note 4)
Forward Voltage IS = 11A, VGS = 0V VSD -- -- 1.4 V
Reverse Recovery Time IS = 11A trr -- 288 -- ns
Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 4.1 -- μC
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
o
3. L = 50mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO. PACKAGE PACKING

TSM60NB190CF C0G ITO-220S 50pcs / Tube

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)

Output Characteristics Transfer Characteristics

20 20
VGS=10V
VGS=9V
16 VGS=8V

ID, Drain Current (A)

VGS=7V
ID, Drain Current (A)

15
VGS=6V
12
10
25℃
8

VGS=5V
5
4
150℃
-55℃
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V)

On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge

RDS(on), Drain-Source On-Resistance (Ω)

0.3 10
VGS, Gate to Source Voltage (V)

0.25 VDS=480V
8 ID=3.7A
VGS=10V
0.2
6
0.15
4
0.1

2
0.05

0 0
0 4 8 12 16 20 0 7 14 21 28 35
ID, Drain Current (A) Qg, Gate Charge (nC)

On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage

RDS(on), Drain-Source On-Resistance

3 0.3
RDS(on), Drain-Source On-Resistance (Ω)

VGS=10V
2.5 ID=3.7A
0.25
2
(Normalized)

1.5 0.2

1 ID=3.7A
0.15
0.5

0 0.1
-75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10

TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V)

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature

10000 1.2

Drain-Source Breakdown Voltage

CISS ID=1mA
C, Capacitance (pF)

1000
1.1

BVDSS (Normalized)
100 COSS
1

10
CRSS
0.9
1

0.1 0.8
0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150
VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage
100 100

RDS(ON)
IS, Reverse Drain Current (A)

10
ID, Drain Current (A)

10

150℃ 25℃ -55℃

1
0.1 SINGLE PULSE
RӨJC=2.1°C/W
TC=25°C

0.01 0.1
1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2
VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient

SINGLE PULSE
RӨJC=2.1°C/W
Thermal Impedance

Duty=0.5
Duty=0.2
0.1 Duty=0.1
Duty=0.05 Notes:
Duty=0.02 Duty = t1 / t2
Duty=0.01 TJ = TC + PDM x ZӨJC x RӨJC
Single
0.01
0.0001 0.001 0.01 0.1 1 10
t, Square Wave Pulse Duration (sec)

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Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

ITO-220S

MARKING DIAGRAM

G = Halogen Free
Y = Year Code
TSC
60NB190 WW = Week Code (01~52)
GYWWF
F = Factory Code

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Taiwan Semiconductor

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

6 Version: A1612
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Authorized Distributor

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