What’s the Right

Switch for You? When

to Use Si MOSFETs,
IGBTs, SiC, GaN
What’s the Right Switch I. Introduction
for You? When to Use Si
MOSFETs, IGBTs, SiC, GaN Power electronics has been one of the Historically, most of the switched-
most rapidly advancing technologies in mode power supplies (SMPS) have been
recent years and a key technology for the implemented with silicon (Si) insulated
new electrification era. The introduction gate bipolar transistors (IGBTs) and
of new semiconductor materials and metal-oxide semiconductor field-effect
manufacturing processes has revolutionized transistors (MOSFETs) tackling all power
the way we design and implement power levels, but eventually wide band-gap
electronics systems. (WBG) semiconductor devices started to
revolutionize this market.

II. Benefits of WBG semiconductors

Silicon carbide (SiC) and gallium nitride (GaN) is that their material improvements have
are two relatively new WBG semiconductor a positive effect on the power system by
devices that have gained popularity as they allowing it to operate at a higher switching
have very good thermal performance and low frequency. This allows it to reduce the size
switching losses, making them ideal for any of the passives, thus having a positive effect
power conversion application. on the end-application via higher efficiency
in a smaller board area (high power density)
Without entering into the material properties and into a lighter design due to shrinking the
analysis, the key takeaway from WBG devices magnetics size.

Effect on Effect on Effect on

Material Properties Device System End-Application

Band-Gap (eV) 1.1

3.3
3.5
Higher Voltage
Lower RSP High
Breakdown Field 0.3

(MV/cm)
2.2 Switching
2
Frequency
and
Electron Mobility 1.5 Higher Efficiency,
1.1 Smaller
(CM2/V*s) 1.3 Smaller, Lighter,
Lower Switching Passives
Cheaper
Losses
1
Electron Drift Velocity 2
(107 cm/s) 2.2

1.5
Thermal Conductivity 4.9 Higher Power Density
(W/cm*K) 1.3

Si SiC GaN

Figure 1: WBG semiconductor material comparison and benefits.

While Si can be implemented in almost GaN is intended for sub-650V applications,

all power levels -- low to high switching while SiC and IGBTs are the main drivers of
frequency -- SiC and GaN are designed to high-power/high-voltage applications like
handle different power and frequency levels: solar inverters, industrial drives, and electric
vehicles (EVs). It’s not an easy task to select
*SiC: Targeted voltages 650-3.3kV. High the right WBG device without first analyzing
power (>3kW up to 10MW) and mid-to-high the value drivers of the application.
switching frequency (>30kHz up to 500KHz).

*GaN: Targeted voltages 80-650V. Medium

power (<10kW) at the highest switching
frequency (>10kHz up to several MHz).

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What’s the Right Switch III. IGBT vs. SiC
for You? When to Use Si
MOSFETs, IGBTs, SiC, GaN As stated before, SiC stands out with regards What about IGBTs?
to high performance with robustness, As they have been in the market for decades,
reliability, and high-temperature operation in IGBTs are a well-established technology.
a smaller system size. Gate drivers don’t have to be as specialized
as SiC gate drivers — meaning that they are
There are some drawbacks, however. SiC easier to implement and use.
MOSFETs require a more specialized gate
driver, as these devices usually require In terms of efficiency, as soon as the
negative voltage driving to fully close the switching frequency drops in high-power
switch to the off state. The discrete Infineon applications (e.g., 2kHz in wind turbines1,
CoolSiC MOSFET can be turned off with 0V, 2-4kHz for solar inverters2, 1-4kHz in
thus there’s no need for negative turn-off general-purpose drives3,6), switching losses
voltage. Read this Bodo’s Power article for between implementing IGBTs or SiC will be
further details. almost irrelevant — resulting in IGBTs having
the best price/performance for low switching
Also, one aspect to consider is that SiC frequency, high-power applications.
wafers require a higher production care
and boast a lower yield, resulting in a IGBTs are offered in both discrete and
slower production rate and lower overall module form actors, thus covering a wide
SiC availability. Plus, SiC wafers are more spectrum of power applications where
expensive than Si wafers. Click this link for robustness may be a deciding factor.
more information. CoolSiC also offered in discrete and module
packaging. Click this link for further details.

Efficiency Value Driver Si IGBTs SiC MOSFETs

Efficiency  
Frequency  
Power Portfolio
Density Power Density  
Efficiency at
Maximum Power  
Density
Robustness  
Robustness Price
High-Temperature
Performance  
Operations
Ease-of-Use  
Ease-of-Use Price Performance  

Si IGBT SiC MOSFET Portfolio Breadth  

Figure 2: IGBT vs. SiC value drivers comparison.

IV. Infineon IGBT7 technology overview and applications

IGBT7 — Infineon’s latest generation, based and cosmic ray ruggedness have both been
on micro-pattern trenches -- performs improved for a better performance in harsh
incredibly well; the channel distribution is environments with critical operation profiles
optimized for improved carrier confinement, and long operation hours.
balancing VCE (sat) and Eoff and having a
positive effect on very low-switching losses4. IGBT7 discrete form factor — such as the
1,200V TRENCHSTOP™ IGBT7 H7 — comes
As these devices are aimed at solar, energy in a wide package offering, like the four-pin
storage systems (ESS) and UPS, welding, and package with auxiliary collector that allows
EV charging applications, IGBT7 humidity improved stray inductance. It has been

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What’s the Right Switch tested on solar applications with ESS and a come in a wide variety of IGBT configurations
for You? When to Use Si three-level NPC2 topology. — giving flexibility to the power designer
MOSFETs, IGBTs, SiC, GaN
to configure the inverter in several ways,
P whether it be a two- or three-level (NPC1,
NPC2, ANPC, etc.) topology. For instance,
a three-level NPC2 topology can be
S2 S3 S1
achieved with one FF2400RB12IP7 and
FF1800R23IE7, but several FF1800R23IE7
0 phase legs can be put in parallel for more
increased power (Figure 4).
S4
For instance, a 3-Level NPC2 topology can
be achieved with one FF2400RB12IP7+
N FF1800R23IE7, but also several
FF1800R23IE7 phase legs can be put in
3L – NPC2 parallel for more increased power (Figure 4).

General purpose drives (GPD) applications

Figure 3: Three-level NPC2 topology tested also benefit from module form factor IGBTs as
on solar and ESS hybrid inverter. they have the lowest Eon and Eoff parameters
while conserving a high efficiency and power
There are more demanding applications density. TRENCHSTOP™ IGBT7 1200V T7
for which robustness is crucial. A module can support applications up to 55kW motor
can be a good option with regards to power ND (45kW motor power HD)6.

3 level NPC2 two module configurations for increased power

FF2400RB12IP7 FF1800R23IE7 P

S3 S2 S1

+ 0

S4

3 level NPC2 three module configurations for more increased power

P
FF2400RB12IP7 2x FF1800R23IE7
S3 S2 S1 S1

0
+ +
S4 S4

Figure 4: Three-level NPC2 module design options2

having the AC bus bar within the package Regarding EV charging, SiC is usually top-
to increase ampacity. These modules of-mind, but, as mentioned earlier, current
come with a pre-applied thermal interface market conditions and supply constraints
material (TIM) in a “honeycomb” shape that make IGBT7 an ideal fit for this — especially
increases robustness and optimizes thermal as it can find the right low-frequency
performance. topologies for outstanding performance.

Another benefit of modules is that they PUC5 (Figure 5) is a unique bidirectional

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What’s the Right Switch a
for You? When to Use Si
MOSFETs, IGBTs, SiC, GaN S1 S4
V1

DC Source

S2 S5

V2

Capacitor

S3 S6
b

Figure 5: PUC5 inverter topology for EV charging applications5.

EV charging topology that allows for lower S7 technology (IKW50N120CS7).

frequency switching -- ideal for 1,200V IGBT

V. IGBT7 + SiC: Best of both worlds

We have reviewed both IGBTs and SiC implemented with SiC technology then
devices, and they both have their own parasitics are minimized and a higher
benefits. But what if we joined the main performance is obtained.
benefits of IGBT7 (operating in high-
voltage, low-to-mid-switching applications) The F3L400R10W3S7F_B11, EasyPACK™ 3B
and the top-notch thermal performance of with TRENCHSTOP™ IGBT7 and CoolSiC™
an SiC diode? Schottky diode, is configured in a 3-Level
ANPC topology (Figure 6), which can achieve
In a three-level ANPC topology, the higher power density in a wide range of
commutation path goes all the way through applications.
IGBTs and diodes7, so if the diodes are

DC+
communication
path for active

T1
D1
operation

T2 T5
D2 D5

N Out

T3 T6
D3 D6

T4
D4

DC−

Figure 6: Three-level ANPC topology commutation path.

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What’s the Right Switch VI. Summary
for You? When to Use Si
MOSFETs, IGBTs, SiC, GaN In conclusion, choosing the right “switch” availability of both technologies. While IGBTs
depends on the specific requirements of the are generally less expensive than SiC devices,
application. the cost of SiC devices is decreasing rapidly,
and they may become more cost-effective in
If the application requires high-voltage the future.
handling and current capacity, IGBT7 may
be the right choice. However, if high power In terms of availability, IGBTs are more
density and efficiency are required with high readily available and have a well-established
temperatures at a high switching speed, SiC manufacturing process. However, SiC devices
may be the better choice. are becoming more widely available, and
new manufacturing processes are being
It’s also worth considering the cost and developed to make them more accessible.

References
1. W.Rusche, PrimePACK TM IGBT5/.XT Power Modules for Wind turbine applications, 2021.

2. W.Rusche, PrimePACK™ IGBT7 Pushing the Limit on PV Applications, 2022

3. Klaus Vogel, et al, New, best-in-class 900-A 1200-V EconoDUAL™ 3 with IGBT 7: highest
power density and performance, Nuremberg, Germany, 2019

4. It’s time to SWITCH! 1200 V TRENCHSTOP™ IGBT7 H7

5. Hani Vahedi, et al, “Topology and Control Analysis of Single-DC-Source Five-Level Packed
U-Cell Inverter (PUC5)” IECON 2017 - 43rd Annual Conference of the IEEE Industrial
Electronics Society, 29 October 2017 - 01 November 2017

6. TRENCHSTOP™ 1200 V IGBT7 T7 Application Note

7. C. Müller, et al, 950 V IGBT and Diode Technology Integrated in a Low Inductive ANPC
Topology for 1500 VDC PV String Inverter, 2020

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