SQ4401EY

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Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) - 40
Definition
RDS(on) () at VGS = - 10 V 0.014
• TrenchFET® Power MOSFET
RDS(on) () at VGS = - 4.5 V 0.023
• AEC-Q101 Qualified
ID (A) - 17.3
• 100 % Rg and UIS Tested
Configuration Single
• Compliant to RoHS Directive 2002/95/EC
S
SO-8

S 1 8 D
G
S 2 7 D

S 3 6 D
G 4 5 D

D
Top View P-Channel MOSFET

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4401EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 40
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 17.3
Continuous Drain Currenta ID
TC = 125 °C - 10
Continuous Source Current (Diode Conduction)a IS - 6.5 A
Pulsed Drain Currentb IDM - 69
Single Pulse Avalanche Current IAS - 30
L = 0.1 mH
Single Pulse Avalanche Energy EAS 45 mJ
TC = 25 °C 7.14
Maximum Power Dissipationb PD W
TC = 125 °C 2.4
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 85
°C/W
Junction-to-Foot (Drain) RthJF 21
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).

S11-2109 Rev. B, 31-Oct-11 1 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 40 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = - 40 V - - - 1.0
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 40 V, TJ = 125 °C - - - 50 μA
VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150
On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 30 - - A
VGS = - 10 V ID = - 10.5 A - 0.011 0.014
VGS = - 10 V ID = - 10.5 A, TJ = 125 °C - - 0.020
Drain-Source On-State Resistancea RDS(on) 
VGS = - 10 V ID = - 10.5 A, TJ = 175 °C - - 0.024
VGS = - 4.5 V ID = - 8.7 A - 0.017 0.023
Forward Transconductancea gfs VDS = - 15 V, ID = - 10.5 A - 30 - S
Dynamicb
Input Capacitance Ciss - 3400 4250
Output Capacitance Coss VGS = 0 V VDS = - 20 V, f = 1 MHz - 440 550 pF
Reverse Transfer Capacitance Crss - 350 436
Total Gate Chargec Qg - 74 115
Gate-Source Chargec Qgs VGS = - 10 V VDS = - 20 V, ID = - 10.5 A - 11 - nC
Gate-Drain Chargec Qgd - 16 -
Gate Resistance Rg f = 1 MHz 1.16 - 3.21 
Turn-On Delay Timec td(on) - 58 85
Rise Timec tr VDD = - 15 V, RL = 15  - 76 105
ns
Turn-Off Delay Timec td(off) ID  - 1 A, VGEN = - 4.5 V, Rg = 6  - 67 85
Fall Timec tf - 44 55
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - - 69 A
Forward Voltage VSD IF = - 2.7 A, VGS = 0 - - 0.8 - 1.1 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S11-2109 Rev. B, 31-Oct-11 2 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

50 50

V GS = 10 V thru 5 V
40 40

I D - Drain Current (A)

I D - Drain Current (A)

V GS = 4 V
30 30

20 20

10 10 T C = 125 °C

V GS = 3 V T C = 25 °C
T C = - 55 °C
0 0
0 2 4 6 8 10 0 2 4 6 8 10
V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

50 0.05

40 0.04
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)

T C = - 55 °C

30 T C = 25 °C 0.03

20 0.02 V GS = 4.5 V
T C = 125 °C
V GS = 10 V
10 0.01

0 0
0 5 10 15 20 25 0 10 20 30 40 50
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

5500 10
5000 ID = 10.5 A
VGS - Gate-to-Source Voltage (V)

4500 8
VDS = 20 V
C - Capacitance (pF)

4000 Ciss
3500
6
3000
2500
4
2000
1500
Coss 2
1000
500 Crss

0 0
0 10 20 30 40 0 10 20 30 40 50 60 70 80
V DS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S11-2109 Rev. B, 31-Oct-11 3 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ4401EY
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

1.8 - 40

ID = 10.5 A ID = 1 mA
R DS(on) - On-Resistance (Normalized)

- 42
1.5
V GS = 10 V
- 44

BVDSX
1.2

- 46

0.9
- 48

0.6 - 50
- 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175
T J - Junction Temperature (°C) T J - Junction Temperature (°C)

On-Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature

100 0.10

10 0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)

T J = 150 °C
1 0.06

T J = 25 °C
0.04
0.1

T J = 125 °C
0.01 0.02

T J = 25 °C
0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V)

Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.0

0.8
ID = 250 μA
0.6
VGS(th) Variance (V)

0.4
ID = 1 mA
0.2

- 0.2

- 0.4
- 50 - 25 0 25 50 75 100 125 150 175
T J - Temperature (°C)

Threshold Voltage

S11-2109 Rev. B, 31-Oct-11 4 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ4401EY
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

IDM Limited
100
100 µs
Limited by RDS(on)*

ID - Drain Current (A)

10
1 ms

10 ms
1
100 ms
1s
10 s, DC
0.1
TC = 25 °C
Single Pulse BVDSS Limited

0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 84 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

S11-2109 Rev. B, 31-Oct-11 5 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ4401EY
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65901.

S11-2109 Rev. B, 31-Oct-11 6 Document Number: 65901

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 01-Jan-2019 1 Document Number: 91000

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