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2 SC 1971

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aldenice silva
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73 views3 pages

2 SC 1971

Uploaded by

aldenice silva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MITSUBISHI RF POWER TRANSISTOR 28C1971 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1971 is asilicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. FEATURES '© High power gain: Gpe 2 1048 @Vec = 13.5V, Po = 6W, f 175MHz Emitter ballasted construction, gold metallization for high feliability and good performances. 70-220 package similar is combinient for mounting Ability of withstanding more than 20:1 load VSWR when operated at Vec = 15.2V, Po = 6W, f= 175MHz. Equivalont input/output series impedance: Zin=1.3+13.29 @Po=6W, Voc=13.8V, f= 175MHz Zout=6.2—j32 APPLICATION 44 to 5 watts output power amplifiers in VHF band applications. OUTLINE DRAWING 2 Taney a: ; it seas OO qt oar gie a3 2 wax © tase @ fuarven my © coutecton T90E || © Fv cewirreny ABSOLUTE MAXIMUM RATINGS (1o=25° ones otra os) Soa [ a Core Fone | Cateco to be vloae ; a oe. Ave paar are gusarand aepenaeay ELECTRICAL CHARACTERISTICS (1025 wien oben snes) Erie uot eve [veo=3v, toe _— soo [wa am aesigee Ter iav.o=aa oe od - [eee ear male [ca vicon x Noes Ree wat, P= 16008, = MITSUBISHI RF POWER TRANSISTOR 28¢C1971 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT 2in=300 100,727 cy 0.0% Eh TStoF, OME, 2046.28 nr Note lenis oe mode tom ise sate copper wie TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION Vs. ‘AMBIENT TEMPERATURE 2 ICTOR OISSPATION Fe (Wa cou: AMBIENT TEMPERATURE Ts C0) Dc CURRENT GAIN vs, COLLECTOR CURRENT 100,27.3P- Zour 802 so vo Aor io SOB COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Tanate fama. tema COLLECTOR CURRENT ic (AD ae COLLECTOR TO EMITTER VOLTAGE Vee (V1 COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. BASE TO EMITTER RESISTANCE wo} }— 3 = al 1 2 afl 28 a0 : | Bae : 22 af 4 ine 58 - Sorar aa as set 18 "25 30 SOOT FOU 300 SOOT OTR COLLECTOR CURRENT Ie IAI BASE TO EMITTER RESISTANCE Fae (0) MITSUBISHI RF POWER TRANSISTOR 28C1971 NPN EPITAXIAL PLANAR TYPE OUTPUT POWER, Sto 100 3 MERE ee tld 2 zg fli) i © Yi tat|, 2 3 g 7 = a 8 le 8 ETT oT "ar ee ee ‘OUTPUT POWER VS. COLLECTOR ‘SUPPLY VOLTAGE Oe Wee

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