30H80/30H80A N-Channel Enhancement Mode MOSFET

Features
• 30H80 (TO-220) / 30H80A (TO-262)
• 30V/80A, D
RDS(ON)=7.5mΩ ( ｍａｘ ) @ VGS=10V
RDS(ON)= 10 mΩ ( ｍａｘ ) @ VGS=4.5V
• Super High Dense Cell Design
G
• Reliable and Rugged
• Avalanche Rated
• Lead Free and Green Devices Available
(RoHS Compliant)
S
Applications N-Channel MOSFET

• Power Management in Desktop Computer or

DC/DC Converters.

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current 80 A
TC=25°C 160
IDP 300µs Pulse Drain Current Tested A
TC=100°C 90
TC=25°C 80*
ID Continuous Drain Current A
TC=100°C 48
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
RθJA Thermal Resistance-Junction to Ambient 50 °C/W
EAS Drain-Source Avalanche Energy, L=0.5mH 225 mJ
Note：* Current limited by bond wire.

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Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

30H80(A)
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V
VDS=20V, V GS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, I DS=250µA 1.0 1.4 1.7 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, IDS=40A - 5.5 7.5
RDS(ON) a Drain-Source On-state Resistance mΩ
VGS=4.5V, I DS=20A - 7.2 10
Diode Characteristics
VSDa Diode Forward Voltage ISD =40A, V GS=0V - 0.85 1.1 V
trr Reverse Recovery Time - 25 - ns
IDS=40A, dlSD /dt=100A/µs
Qrr Reverse Recovery Charge - 10 - nC

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

30H80(A)
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics b
RG Gate Resistance VGS=0V,V DS=0V,F=1MHz - 1.6 - Ω
Ciss Input Capacitance - 2000 2800
VGS=0V,
Coss Output Capacitance VDS=15V, - 400 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 320 -
td(ON) Turn-on Delay Time - 14 26
tr Turn-on Rise Time VDD=15V, RL=15Ω, - 12 23
IDS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time RG=6Ω - 49 89
tf Turn-off Fall Time - 21 39
b
Gate Charge Characteristics
Qg Total Gate Charge - 22.5 32
VDS=15V, V GS=4.5V,
Qgs Gate-Source Charge - 5.6 - nC
IDS=40A
Q gd Gate-Drain Charge - 13 -
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

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Typical Operating Characteristics

Power Dissipation Drain Current

60 70

50 60

ID - Drain Current (A)

50
40
Ptot - Power (W)

40
30
30
20
20

10
10
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 2

1
100 Duty = 0.5
Normalized Effective Transient
it
Lim

1ms
ID - Drain Current (A)

n)

0.2
s(o
Rd

10ms
0.1
10 100ms

1s 0.05
0.1
DC
0.02
1
0.01

2
O Mounted on 1in pad
TC=25 C o
Single Pulse RθJA :50 C/W
0.1 0.01
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

160 14
VGS= 5,6,7,8,9,10V 4.5V

140
12

RDS(ON) - On - Resistance (mΩ)

120
10 VGS=4.5V
ID - Drain Current (A)

4V
100
8
80

3.5V 6 VGS=10V
60

4
40
3V
20 2
2.5V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

18 1.6
IDS=40A IDS =250µA
16
RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Voltage

1.4
14
1.2
12

10 1.0

8 0.8

6
0.6
4
0.4
2

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 160
VGS = 10V
100
1.8 IDS = 40A
Normalized On Resistance

1.6

IS - Source Current (A)

1.4 o
Tj=150 C
1.2
o
Tj=25 C
1.0 10

0.8

0.6

0.4

0.2 1
o
RON@Tj=25 C: 4.5mΩ
0.0 0.5
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

3000 10
Frequency=1MHz VDS= 15V
2700 9 ID= 40A
VGS - Gate-source Voltage (V)

2400 8
C - Capacitance (pF)

2100 7
Ciss
1800 6

1500 5

1200 4

900 3

600 2
Coss
Crss 1
300

0 0
0 5 10 15 20 25 0 9 18 27 36 45

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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