IGBT - Field Stop

600 V, 40 A

FGH40N60SMD-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low www.onsemi.com
conduction and switching losses are essential.

Features C
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A G

• High Input Impedance

• Tightened Parameter Distribution E
• AEC Qualified and PPAP Capable
IGBT: AEC−Q101 E
• This Device is Pb−Free and is RoHS Compliant C
G

Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Inverters, SMPS, PFC, UPS
ABSOLUTE MAXIMUM RATINGS TO−247−3LD
CASE 340CK
Rating Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V MARKING DIAGRAM
Collector Current IC A
@ TC = 25°C 80
@ TC = 100°C 40
$Y&Z&3&K
Pulsed Collector Current ICM 120 A
FGH40N60
(Note 1)
SMD
Diode Forward Current IF A
@ TC = 25°C 40
@ TC = 100°C 20
Pulsed Diode Maximum Forward IFM 120 A
Current (Note 1)

Maximum Power Dissipation PD W

@ TC = 25°C 349 $Y = ON Semiconductor Logo
@ TC = 100°C 174 &Z = Assembly Plant Code
&3 = Numeric Date Code
Operating Junction Temperature TJ −55 to +175 °C &K = Lot Code
Storage Temperature Range Tstg −55 to +175 °C FGH40N60SMD = Specific Device Code

Maximum Lead Temperature TL 300 °C

for Soldering, 1/8″ from Case ORDERING INFORMATION
for 5 Seconds See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

February, 2020 − Rev. 4 FGH40N60SMD−F085/D
 FGH40N60SMD−F085

THERMAL CHARACTERISTICS
Parameter Symbol Ratings Unit
Thermal Resistance Junction−to−Case, for IGBT RJC (Note 2) 0.43 °C/W
Thermal Resistance Junction−to−Case, for Diode RJC 1.8 °C/W
Parameter Symbol Typ.
Thermal Resistance Junction−to−Ambient (PCB Mount) (Note 2) RJA 45 °C/W
2. RJC for TO−247: according to Mil standard 883−1012 test method. RJA for TO−247 : according to JESD51−2, test method environmental
condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective
Thermal Conductivity Test Board for Leaded Surface Mount Package.

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Package Type Quantity
FGH40N60SMD FGH40N60SMD−F085 TO−247−3 Tube 30 Units

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V
Temperature Coefficient of Breakdown BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C
Voltage
Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A
ICES at 80% * BVCES, 175°C − − 800
G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICs
G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 3.5 4.5 6.0 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.9 2.5 V
IC = 40 A, VGE = 15 V, TC = 175°C − 2.1 − V
DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz − 1880 2500 pF
Output Capacitance Coes − 180 240 pF
Reverse Transfer Capacitance Cres − 50 65 pF

SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A, − 18 24 ns
RG = 6  VGE = 15 V,
Rise Time tr Inductive Load, TC = 25°C − 28 36.4 ns
Turn−Off Delay Time td(off) − 110 143 ns
Fall Time tf − 13.2 18.5 ns
Turn−On Switching Loss Eon − 0.92 1.2 mJ
Turn−Off Switching Loss Eoff − 0.3 0.39 mJ
Total Switching Loss Ets − 1.22 1.59 mJ
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A, − 16.7 23.8 ns
RG = 6  VGE = 15 V,
Rise Time tr Inductive Load, TC = 175°C − 27 35.1 ns
Turn−Off Delay Time td(off) − 116 151 ns
Fall Time tf − 56.5 81 ns
Turn−On Switching Loss Eon − 1.47 1.91 mJ
Turn−Off Switching Loss Eoff − 0.73 0.95 mJ
Total Switching Loss Ets − 2.20 2.86 mJ

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 FGH40N60SMD−F085

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter Symbol Test Conditions Min Typ Max Unit
Total Gate Charge Qg VCE = 400 V, IC = 40 A, VGE = 15 V − 119 180 nC
Gate to Emitter Charge Qge − 13 20 nC
Gate to Collector Charge Qgc − 58 90 nC

ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)

Parametr Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage VFM IF = 20 A TC = 25°C − 2.3 2.8 V
TC = 175°C − 1.67 −
Reverse Recovery Energy Erec IF = 20 A, diF/dt = 200 A/s TC = 175°C − 48.9 − J
Diode Reverse Recovery Time trr TC = 25°C − 36 47 ns
TC = 175°C − 110 −
Diode Reverse Recovery Charge Qrr TC = 25°C − 46.8 61 nC
TC = 175°C − 470 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH40N60SMD−F085

TYPICAL CHARACTERISTICS

120 120
VGE = 20 V 12 V VGE = 20 V 12 V
10 V 10 V
15 V
100 100
Collector Current, IC [A]

15 V

Collector Current, IC [A]

80 80

60 60
8V
40 40
8V
20 20
TC = 25°C TC = 175°C
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
Common Emitter
100 Collector Current, IC [A] 100 VCE = 20 V
TC = 25°C
Collector Current, IC [A]

TC = 175°C
80 80

60 60

40 40
Common Emitter
VGE = 15 V
20 TC = 25°C 20
TC = 175°C
0 0
0 1 2 3 4 5 0 2 4 6 8 10 12
Collector−Emitter Voltage, VCE [V] Gate−Emitter Voltage, VGE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics

3 20
Common Emitter Common Emitter
Collector−Emitter Voltage, VCE [V]

VGE = 15 V
Collector−Emitter Voltage, VCE [V]

TC = −40°C
80 A 16
80 A

12
40 A
2
40 A 8

IC = 20 A
IC = 20 A 4

1 0
25 50 75 100 125 150 175 4 8 12 16 20
Collector−Emitter Case Temperature, TC [°C] Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. Case Temperature Figure 6. Saturation Voltage vs. VGE
at Variant Current Level

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 FGH40N60SMD−F085

TYPICAL CHARACTERISTICS

20 20
Common Emitter Common Emitter
Collector−Emitter Voltage, VCE [V]

TC = 25°C

Collector−Emitter Voltage, VCE [V]

TC = 175°C
16 14
80 A
80 A
12 12
40 A 40 A

8 8

IC = 20 A
4 4

IC = 20 A
0 0
4 8 12 16 20 4 8 12 16 20
Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V]

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

4000 15
Cies

Gate−Emitter Voltage, VGE [V]

12
VCC = 200 V
400 V
1000
Capacitance [pF]

Coes 9 300 V

6
Cres
Common Emitter
VGE = 0 V, f = 1 MHz 3
100
TC = 25°C Common Emitter
TC = 25°C
50 0
1 10 30 0 50 100 120
Collector−Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

300 100
tr
100 10 s
Collector Current, IC [A]

Switching Time [ns]

100 s
td(on)
10 10 ms 1 ms
10

DC Common Emitter
1 VCC = 400 V, VGE = 15 V
*Notes:
IC = 40 A
1. TC = 25°C
TC = 25°C
2. TJ ≤ 175°C
TC = 175°C
3. Single Pulse
0.1 1
1 10 100 1000 0 10 20 30 40 50
Collector−Emitter Voltage, VCE [V] Gate Resistance, RG []
Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate
Resistance

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 FGH40N60SMD−F085

TYPICAL CHARACTERISTICS

10000 100
Common Emitter
VCC = 400 V, VGE = 15 V tr
IC = 40 A
Switching Time [ns]

TC = 25°C

Switching Time [ns]

1000 TC = 175°C
td(off) td(on)
10

100
tf Common Emitter
VGE = 15 V, RG = 6 
TC = 25°C
TC = 175°C
10 1
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [] Collector Current, IC [A]
Figure 13. Turn−off Characteristics vs. Gate Figure 14. Turn−on Characteristics vs.
Resistance Collector Current

1000 100
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
td(off)
TC = 25°C
Switching Time [ns]

Switching Loss [mJ]

100 10 TC = 175°C

tf
Eon

10 1
Common Emitter
VGE = 15 V, RG = 6 
Eoff
TC = 25°C
TC = 175°C
1 0.1
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG []
Figure 15. Turn−off Characteristics vs. Figure 16. Switching Loss vs. Gate
Collector Current Resistance

10 200
Common Emitter
VGE = 15 V, RG = 6  100
TC = 25°C Eon
Collector Current, IC [A]

TC = 175°C
Switching Loss [mJ]

1
10

Eoff

Safe Operating Area

VGE = 15 V, TC ≤ 175°C
0.1 1
20 40 60 80 1
Collector Current, IC [A] Collector−Emitter Voltage, VCE [V]
Figure 17. Switching Loss vs. Collector Figure 18. Turn−off Switching SOA
Current Characteristics

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 FGH40N60SMD−F085

TYPICAL CHARACTERISTICS

90 120
110 Square Wave
80 TJ ≤ 175°C, D = 0.5, VCE = 400 V
100 VGE = 15/0 V, RG = 6 
70
Collector Current, IC [A]

90

Collector Current, IC [A]

60 80
70 TC = 75°C
50
60
40 TC = 100°C
50
30 40
20 30
20
10
10
0 0
0 25 50 75 100 125 150 175 1k 10k 100k 1M
Collector−Emitter Case Temperature, TC [°C] Switching Frequency, f [Hz]
Figure 19. Current Derating Figure 20. Load Current vs. Frequency

100 1000

TC = 175°C
100
Reverse Current ICES [A]
Forward Current, IF [A]

TC = 175°C 10 TC = 100°C
10
1

TC = 25°C
0.1 TC = 25°C

1 0.01
0 1 2 3 0 200 400 600
Forward Voltage, VF [V] Collector to Emitter Voltage, VCES [V]
Figure 21. Forward Characteristics Figure 22. Reverse Current

600 200
TC = 25°C TC = 25°C
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

500 TC = 175°C TC = 175°C di/dt = 100 A/s

150
400

300 100 200 A/s

di/dt = 200 A/s

200
di/dt = 100 A/s
50
di/dt = 100 A/s
100
200 A/s
0 0
0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45
Forward Current, IF [A] Forward Current, IF [A]
Figure 23. Stored Charge Figure 24. Reverse Recovery Time

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 FGH40N60SMD−F085

0.5

0.5

Thermal Response [Zjc]

0.1 0.2
0.1
0.05
0.02
0.01 0.01
PDM
Single Pulse t1
t2
Duty Factor, D = t1/t2
Peak TJ = Pdm x Zjc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1
Rectangular Pulse Duration [sec]
Figure 25. Transient Thermal Impedance of IGBT

1 0.5
Thermal Response [Zjc]

0.2
0.1

0.1 0.05 PDM

0.02
t1
0.01 t2
Duty Factor, D = t1/t2
single pulse
Peak TJ = Pdm x Zjc + TC
0.01
1E−5 1E−4 1E−3 0.01 0.1 1
Rectangular Pulse Duration [sec]
Figure 26. Transient Thermal Impedance of Diode

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK
ISSUE A
DATE 31 JAN 2019
A P1
A E
A2
P D2

Q
E2
S
D1
D B E1

2
1 2 3

L1
A1

b4 L

c
(3X) b
(2X) b2 0.25 M B A M
MILLIMETERS
(2X) e DIM
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
GENERIC D 20.32 20.57 20.82
MARKING DIAGRAM*
D1 13.08 ~ ~
AYWWZZ D2 0.51 0.93 1.35
XXXXXXX E 15.37 15.62 15.87
XXXXXXX E1 12.81 ~ ~
E2 4.96 5.08 5.20
XXXX = Specific Device Code e ~ 5.56 ~
A = Assembly Location
Y = Year L 15.75 16.00 16.25
WW = Work Week L1 3.69 3.81 3.93
ZZ = Assembly Lot Code
P 3.51 3.58 3.65
*This information is generic. Please refer to
device data sheet for actual part marking. P1 6.60 6.80 7.00
Pb−Free indicator, “G” or microdot “G”, may Q 5.34 5.46 5.58
or may not be present. Some products may
not follow the Generic Marking. S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13851G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD SHORT LEAD PAGE 1 OF 1

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