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2N2222A

The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

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Jack Harper
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59 views5 pages

2N2222A

The 2N2222A is a silicon NPN transistor in a TO-18 metal case designed for high-speed switching applications up to 500mA. It has a useful current gain over a wide range of currents, low leakage currents, and low saturation voltage. Key specifications include a collector-emitter breakdown voltage of 40V, saturation voltage below 1V at 150mA, and DC current gain of 100-300 at 150mA. The transistor provides good performance for general purpose switching and small signal applications.

Uploaded by

Jack Harper
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2N2222A

NPN Transistor
DESCRIPTION

The 2N2222A is silicon planar epitaxial NPN transistors


in Jedec TO-18 metal case. It is designed for high speed
switching application at collector current up to 500mA,
and feature useful current gain over a wide range of collector
current, low leakage currents and low saturation voltage.

ABSOLUTE MAXIMUM RATINGS


Parameter Symbol Rating UNIT
Collector-Base Votlage (I E=0) VCBO 75 V
Collector-Emitter Voltage (I B=0) VCEO 40 V
Emitter-Base Voltage(I C=0) V EBO 6 V
Collector Current IC 800 mA
at T A≤25℃
Total Dissipation 0.5 W
Ptot
at T C≤25℃ 1.8 W
Thermal Resistance Junction to Ambient Rthja 300 °C/W
Thermal Resistance Junction to Case Rthjc 83.3 °C/W
Operating Temperature TJ 175 °C
Storage Temperature Range TSTG -65 ~ 200 °C

ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)


Parameter Symbol Test Condition. Min. Max. Unit
VCB=60V 10 nA
Collector Cut-off Current (IE=0) ICBO
VCB=60V, TC=150°C 10 uA
Collector Cut-off Current (VBE=-3V) ICEX VCE=60V 10 nA
Base Cut-off Current(V BE=-3V) IBEX VCE=60V 20 nA
Emitter Cut-off Current(I C=0) IEBO VEB=3V 10 nA
Collector-Base Breakdown Voltage (I E=0) V(BR)CBO* IC=10uA 75 V
Collector-Emitter Breakdown Voltage(I B=0) V(BR)CEO* IC=10mA 40 V
Emitter-Base Breakdown Voltage(IC=0) V(BR)EBO* IE=10uA 6 V
IC=150mA I B=15mA 0.3 V
Collector-Emitter Saturation Voltage VCE(sat)*
IC=500mA I B=50mA 1 V
IC=150mA I B=15mA 0.6 1.2 V
Base-Emitter Saturation Voltage VBE(sat)*
IC=500mA I B=50mA 2 V
IC=0.1mA VCE=10V 35
IC=1mA VCE=10V 50
IC=10mA V CE=10V 75
DC Current Gain
hFE* IC=150mA V CE=10V 100 300
IC=500mA V CE=10V 40
IC=150mA V CE=1V 50
IC=10mA VCE=10V TA=-55℃ 35
IC=1mA V CE=10V f=1KHz 50 300
Small Signal Current Gain hfe*
IC=10mA VCE=10V f=1KHz 75 375

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2N2222A
NPN Transistor
ELECTRICAL CHARACTERISTICS(continued)
Parameter Symbol Test Condition. Min. Max. Unit
Transition Frequency fT IC=20mA VCE=20V f=100MHz 300 MHz
Emitter Base Capacitance CEBO IC=0 VEB=0.5V f=100KHz 25 pF
Collector Base Capacitance CCBO IE=0 VCB=10V f=100KHz 8 pF
Real Part of Input Impedance Re(hie) IC=20mA VCE=20V f=300MHz 60 Ω
IC=0.1mA V CE=10V f=1KHz
Noise Figure NF 4(Typ.) dB
Rg=1KΩ
IC=1mA VCE=10V 2 8 kΩ
Input Impedance hie
IC=10mA VCE=10V 0.25 1.25 kΩ
-4
IC=1mA VCE=10V 8 10
Reverse Voltage Ratio hre -4
IC=10mA VCE=10V 4 10
IC=1mA VCE=10V 5 35 uS
Output Admittance hoe
IC=10mA VCE=10V 25 200 uS
VCC=30V IC=150mA
Delay Time td** 10 nS
IB1=15mA VBB=-0.5V
VCC=30V IC=150mA
Rise Time tr** 25 nS
IB1=15mA VBB=-0.5V
Storage Time ts** VCC=30V IC=150mA I B1=-IB2=15mA 225 nS
Fall Time tf** VCC=30V IC=150mA I B1=-IB2=15mA 60 nS
Feedback Time Constant rbb’ Cd’c IC=20Ma VCE=20V f=31.8MHz 150 pS
*Pulsed: Pulse duration =300us, duty cycle≤1%
**see test circuit

RATINGS AND CHARACTERISTICS CURVES

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2N2222A
NPN Transistor

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2N2222A
NPN Transistor

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2N2222A
NPN Transistor
PACKAGE OUTLINE DIMENSIONS (TO-18 PACKAGE)

www.goodarksemi.com 5/5 Doc.US2N2222Ax2.0

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