IRIS-G5653

Features INTEGRATED SWITCHER

• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part. Package Outline
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PRC mode (≒20kHz) TO-220 Fullpack (5 Lead)
• Various kinds of protection functions
Key Specifications
• Pulse-by-pulse Overcurrent Protection (OCP)
MOSFET RDS(ON) Pout(W)
• Overvoltage Protection with latch mode (OVP) Type VDSS(V) MAX AC input(V) Note 1

• Thermal Shutdown with latch mode (TSD) 230±15% 125

IRIS-G5653 650 1.9Ω 85 to 264 60
Descriptions
IRIS-G5653A is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back Quasi-
Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external
components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).

Typical Connection Diagram

IRIS-G5600

OCP/FB
Vin
GND
S
D

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 IRIS-G5653A

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 1-2 10 A Single Pulse
V2-3=0.78V
IDMAX Maximum switching current *5 1-2 10 A Ta=-20~+125℃
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2 1-2 80 mJ IL peak=2.6A
Vin Input voltage for control part 4-3 35 V
Vth O.C.P/F.B Pin voltage 5-3 6 V
26 W With infintite heatsink
P D1 Power dissipation for MOSFET *3 1-2 1.5 W Without heatsink
Power dissipation for control part Specified by
P D2 (Control IC) *4 4-3 0.8 W Vin×Iin
Internal frame temperature Refer to recommended
TF in operation - -20 ~ +125 ℃ operating temperature
Top Operating ambient temperature - -20 ~ +125 ℃
Tstg Storage temperature - -40 ~ +125 ℃
Tch Channel temperature - 150 ℃

*1 Refer to MOS FET A.S.O curve

Fig.1
*2 MOS FET Tch-EAS curve
V2-3
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.

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 IRIS-G5653A

Electrical Characteristics (for Control IC)

Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)

Ratings Test
Symbol Definition MIN TYP MAX Units Conditions
Vin(ON) Operation start voltage 14.4 16 17.6 V Vin=0→17.6V
Vin(OFF) Operation stop voltage 9 10 11 V Vin=17.6→9V
Iin(ON) Circuit current in operation - - 20 mA -
Iin(OFF) Circuit current in non-operation - - 100 µA Vin=14V
TOFF(MAX) Maximum OFF time 45 - 55 µsec -
Minimum time for input of quasi
Tth(2) resonant signals *6 - - 1 µsec -
TOFF(MIN) Minimum OFF time *7 - - 2 µsec -
Vth(1) O.C.P/F.B Pin threshold voltage 1 0.68 0.73 0.78 V -
Vth(2) O.C.P/F.B Pin threshold voltage 2 1.3 1.45 1.6 V
IOCP/FB O.C.P/F.B Pin extraction current 1.2 1.35 1.5 mA -
Vin(OVP) O.V.P operation voltage 34 36.5 39 V Vin=0→39.0V
Iin(H) Latch circuit sustaining current *8 - - 400 µA Vin=39.0→8.5V
Vin(La.OFF) Latch circuit release voltage *8 6.6 - 8.4 V Vin=39.0→6.6V
Tj(TSD) Thermal shutdown operating temperature 140 - - ℃ -
Vin(SENSE) Detected Voltage 31.7 32 32.3 V Vin=31.7→32.3V
- Temperature coefficient of detected voltage - 2.5 - mV/℃ Vin=31.7→32.3V

*6 Recommended operating conditions

Tth(2)≧1.0μsec
Time for iunput of quasi resonant signals
For the quasi resonant signal inputted to OCP/FB Pin ＶO.C.P/F.B
at the time of quasi resonant operation, the signal shall Vth(2)
be wider thant Tth(2). 0V
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.

Electrical Characteristics (for MOSFET)

(Ta=25℃) unless otherwise specified
Ratings
Symbol Definition MIN TYP MAX Units Test Conditions
ID=300µA
VDSS Drain-to-Source breakdown voltage 650 - - V V3- 2 =0V(short)
VDS =650V
IDSS Drain leakage current - - 300 µA V3-2=0V(short)
V3-2=10V
RDS(ON) On-resistance - - 1.9 Ω ID=1.2A
tf Switching time - - 250 nsec -
Between channel and
θch-F Thermal resistance - - 2 ℃/W internal frame

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 IRIS-G5653A

IRIS-G5653
IRIS-G5653 MOSFET A.S.O. Curve
A.S.O. temperature derating coefficient curve
100
100
A.S.O. temperature derating coefficient[%]

80 Drain current 0.1ms

10 limit by ON
resistance

Drain CurrentD I[A]

1ms

60

40

0.1
20 ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.

0
0 20 40 60 80 100 120 0.01
1 10 100 1000
Internal frame temperature TF [℃] D rain-to-Source V oltage V D S[V ]

IRIS-G5653 IRIS-G5653
Maximum Switching current derating curve Avalanche energy derating curve
Ta=‐20～+125℃
12
100

10
Maximum Switchng Current IDMAX[A]

EAS temperature derating coefficient[%]

80

8
60

40
4

20
2

0 0
0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150
V2-3 [V] Channel temperature Tch [℃]

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 IRIS-G5653A

IRIS-G5653 IRIS-G5653
MOSFET Ta-PD1 Curve MIC TF-PD2 Curve
30 0.9
PD1=26[W] PD2=0.8[W]
0.8
25
0.7
With infinite

Power dissipation P D2[W]

Power dissipation P D1[W]

20 heatsink 0.6

0.5
15
0.4

10 0.3

Without 0.2
5 heatsink
PD1=1.5[W] 0.1

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]

IRIS-G5653
Transient thermal resistance curve

10
Transient thermal resistance θch-c[℃/W]

0.1

0.01

0.001
1µ 10µ 100µ 1m 10m 100m
tim e t [sec]

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 IRIS-G5653A

Block Diagram
4 Vin

3
D
START O.V.P. LATCH

DRIVE
REG.
2
S
T.S.D Vth(1) 1
- OCP/FB
+

O.S.C
Vth(2)
-
+

5
GND

Lead Assignments

Pin No. Symbol Description Function

1 D Drain Pin MOSFET drain
2 S Source Pin MOSFET source
3 GND Ground Pin Ground
4 Vin Power supply Pin Input of power supply for control circuit
Overcurrent / Feedback Input of overcurrent detection
5 OCP/FB Pin signal / constant voltage control signal

Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
D
S STEP DRV – 2 step drive circuit
GND
Vin
OCP/FB

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 IRIS-G5653A

Case Outline
4.2 ±0.2

φ3.2 ±0.2
4 ±0.2 2.8 ±0.2

7.9 ±0.2

16.9 ±0.3

IRIS

2.6 ±0.1

2-(R1)
4.1 ±0.5

8.7 ±0.5
0.94 ±0.15 R-end
(4.6)

+0.2
0.85 -0.1

+0.2
0.45 -0.1

4xp1.7±0.1=(6.8) 5.08 ±0.6

a：Type Number G5653A

10 ±0.2
b：Lot Number
1st letter：The last digit of year
0.7 0.7 2nd letter：Month
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.
3rd & 4th letter：Day
Arabic Numerals
1 2 3 4 5
Weight : Approx. 2.3g
Dimensions in mm
Material of Pin : Cu
DWG.No.：TG3A-1128
Treatment of Pin : Ni plating + solder dip

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.

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