BGU7061

5
Analog high linearity low noise variable gain amplifier
1
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Rev. 2 — 29 January 2015 Product data sheet

1. Product profile

1.1 General description

The BGU7061 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7061 is operating in the 770 MHz to 915 MHz
frequency range and has a gain control range of more than 35 dB. At maximum gain the
noise figure is 0.74 dB. The gain is analog-controlled having maximum gain at 0 V and
minimum gain at 3.3 V. The LNA can be bypassed extending the dynamic range. The
BGU7061 is internally matched to 50 ohm, meaning no external matching is required,
enabling ease of use. It is housed in a 16 pins 8 mm  8 mm  1.3 mm leadless
HLQFN16R package SOT1301.

1.2 Features and benefits

 Input and output internally matched to 50 
 Low noise figure of 0.74 dB
 High input IP3 of 2 dBm
 High Pi(1dB) of 12.5 dBm
 Bypass mode of LNA giving high dynamic gain range
 Gain control range of 0 dB to 35 dB
 Single 5 V supply
 Single analog gain control of 0 V to 3.3 V
 Unconditionally stable up to 12.75 GHz
 Moisture sensitivity level 3
 ESD protection at all pins

1.3 Applications
 Cellular base stations, remote radio heads
 3G, LTE infrastructure
 Low noise applications with variable gain and high linearity requirements
 Active antenna
NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

1.4 Quick reference data

Table 1. Quick reference data
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
f = 900 MHz
ICC(tot) total supply current high gain mode [1] 197 229 267 mA
low gain mode [2] 175 199 230 mA
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) [1] - 0.74 - dB
Gp = 35 dB [1] - 0.87 1.05 dB
IP3I input third-order intercept point Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz [1] 1 2.0 - dBm
Pi(1dB) input power at 1 dB gain Gp = 35 dB [1] 13.5 12.5 - dBm
compression
f = 788 MHz
ICC(tot) total supply current high gain mode [1] 197 229 267 mA
low gain mode [2] 175 199 230 mA
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) [1] - 0.64 - dB
Gp = 35 dB [1] - 0.86 1.05 dB
IP3I input third-order intercept point Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz [1] 0 1.3 - dBm
Pi(1dB) input power at 1 dB gain Gp = 35 dB [1] 13.5 12.4 - dBm
compression
f = 830 MHz
ICC(tot) total supply current high gain mode [1] 197 229 267 mA
low gain mode [2] 175 199 230 mA
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) [1] - 0.61 - dB
Gp = 35 dB [1] - 0.75 1.05 dB
IP3I input third-order intercept point Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz [1] 0.5 1.5 - dBm
Pi(1dB) input power at 1 dB gain Gp = 35 dB [1] 13.5 12.4 - dBm
compression
f = 850 MHz
ICC(tot) total supply current high gain mode [1] 197 229 267 mA
low gain mode [2] 175 199 230 mA
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) [1] - 0.64 - dB
Gp = 35 dB [1] - 0.77 1.05 dB
IP3I input third-order intercept point Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz [1] 0.5 1.6 - dBm
Pi(1dB) input power at 1 dB gain Gp = 35 dB [1] 13.5 12.4 - dBm
compression

[1] high gain mode: GS1 = LOW; GS2 = HIGH (see Table 15)
[2] low gain mode: GS1 = HIGH; GS2 = LOW (see Table 15)

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 2 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

2. Pinning information

2.1 Pinning

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Fig 1. Pin configuration

2.2 Pin description

Table 2. Pin description
Symbol Pin Description
RF_IN 1 RF input
GND 2, 11, 13, 16 ground
GS1 3 gain switch control 1
n.c. 4, 5, 7, 10 not connected, internally open
GS2 6 gain switch control 2
i.c. 8 internally connected to ground
Vctrl(Gp) 9 power gain control voltage
RF_OUT 12 RF output
VCC2 14 supply voltage 2
VCC1 15 supply voltage 1

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BGU7061 HLQFN16R plastic thermal enhanced low quad flat package; SOT1301-1
no leads; 16 terminals; body 8  8  1.3 mm

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 3 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

4. Functional diagram

9&&

9&&
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QF

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Fig 2. Functional diagram

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 4 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage 0 6 V
Vctrl(Gp) power gain control voltage 1 +3.6 V
VI(GS1) input voltage on pin GS1 1 +3.6 V
VI(GS2) input voltage on pin GS2 1 +3.6 V
Pi(RF)CW continuous waveform RF input power Vctrl(Gp) = 0 V; 777 MHz  f  915 MHz
high gain mode [1] - 10 dBm
low gain mode [2] - 15 dBm
Tj junction temperature - 150 C
Tstg storage temperature 40 +150 C
VESD electrostatic discharge voltage Human Body Model (HBM); according to - 2 kV
ANSI/ESDA-JEDEC JS-001-2020-Device Testing,
Human Body Model
Charged Device Model (CDM); according to - 750 V
JEDEC standard 22-C101

[1] high gain mode: GS1 = LOW; GS2 = HIGH (see Table 15)
[2] low gain mode: GS1 = HIGH; GS2 = LOW (see Table 15)

6. Recommended operating conditions

Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
VCC1 supply voltage 1 4.75 5 5.25 V
VCC2 supply voltage 2 4.75 5 5.25 V
Vctrl(Gp) power gain control voltage 0 - 3.3 V
VI(GS1) input voltage on pin GS1 0 - 3.3 V
VI(GS2) input voltage on pin GS2 0 - 3.3 V
Z0 characteristic impedance - 50 - 
Tcase case temperature 40 - +85 C

7. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case [1] 42 K/W

[1] The case temperature is measured at the ground solder pad.

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 5 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

8. Characteristics

8.1 Characteristics at f = 900 MHz

Table 7. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 197 229 267 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 12.7 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 36.7 - dB
Gp(flat) power gain flatness 880 MHz  f  915 MHz; 18 dB  Gp  35 dB - 0.0 - dB
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) - 0.74 - dB
Gp = 35 dB - 0.87 1.05 dB
Gp = 18 dB - 6.47 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB 1 2.0 - dBm
Gp = 30 dB - 4.8 - dBm
Gp = 29 dB - 5.0 - dBm
Gp = 18 dB - 6.3 - dBm
Pi(1dB) input power at 1 dB Gp = 35 dB 13.5 12.5 - dBm
gain compression Gp = 30 dB - 7.6 - dBm
Gp = 29 dB - 6.8 - dBm
Gp = 18 dB - 4.8 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 30.5 - dB
Gp = 35 dB - 28.0 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 17.5 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

Table 8. Characteristics low gain mode

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 175 199 230 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 5.9 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 18.3 - dB
Gp(flat) power gain flatness 880 MHz  f  915 MHz; 3 dB  Gp  17 dB - 0.0 - dB
NF noise figure Gp = 17 dB - 11.2 - dB
Gp = 3 dB - 22.9 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz -
Gp = 17 dB - 21.4 - dBm
Gp = 12 dB - 26.5 - dBm
Gp = 11 dB - 27.4 - dBm
Gp = 3 dB - 31.2 - dBm

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 6 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

Table 8. Characteristics low gain mode …continued

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
Pi(1dB) input power at 1 dB gain compression Gp = 17 dB - 5.6 - dBm
Gp = 12 dB - 10.4 - dBm
Gp = 11 dB - 11.1 - dBm
Gp = 3 dB - 13.2 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 25.1 - dB
Gp = 17 dB - 22.7 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 18.3 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

8.2 Characteristics at f = 788 MHz

Table 9. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 788 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 197 229 267 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 12.6 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 37.3 - dB
Gp(flat) power gain flatness 777 MHz  f  798 MHz; 18 dB  Gp  35 dB - 0.1 - dB
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) - 0.64 - dB
Gp = 35 dB - 0.86 1.05 dB
Gp = 18 dB - 6.27 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB 0 1.3 - dBm
Gp = 30 dB - 3.5 - dBm
Gp = 29 dB - 3.7 - dBm
Gp = 18 dB - 5.5 - dBm
Pi(1dB) input power at 1 dB Gp = 35 dB 13.5 12.4 - dBm
gain compression Gp = 30 dB - 7.8 - dBm
Gp = 29 dB - 7.1 - dBm
Gp = 18 dB - 5.6 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 20.0 - dB
Gp = 35 dB - 20.5 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 18.6 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 7 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

Table 10. Characteristics low gain mode

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 788 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 175 199 230 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 5.9 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 18.8 - dB
Gp(flat) power gain flatness 777 MHz  f  798 MHz; 3 dB  Gp  17 dB - 0.0 - dB
NF noise figure Gp = 17 dB - 11.4 - dB
Gp = 3 dB - 22.9 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz -
Gp = 17 dB - 21.0 - dBm
Gp = 12 dB - 25.7 - dBm
Gp = 11 dB - 26.8 - dBm
Gp = 3 dB - 32.1 - dBm
Pi(1dB) input power at 1 dB gain compression Gp = 17 dB - 5.8 - dBm
Gp = 12 dB - 10.5 - dBm
Gp = 11 dB - 11.2 - dBm
Gp = 3 dB - 13.9 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 25.6 - dB
Gp = 17 dB - 25.8 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 21.0 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

8.3 Characteristics at f = 830 MHz

Table 11. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 197 229 267 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 12.7 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 36.8 - dB
Gp(flat) power gain flatness 815 MHz  f  840 MHz; 18 dB  Gp  35 dB - 0.1 - dB
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) - 0.61 - dB
Gp = 35 dB - 0.75 1.05 dB
Gp = 18 dB - 5.49 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB 0.5 1.5 - dBm
Gp = 30 dB - 4.0 - dBm
Gp = 29 dB - 4.3 - dBm
Gp = 18 dB - 6.0 - dBm

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 8 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

Table 11. Characteristics high gain mode …continued

GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
Pi(1dB) input power at 1 dB Gp = 35 dB 13.5 12.4 - dBm
gain compression Gp = 30 dB - 7.6 - dBm
Gp = 29 dB - 6.9 - dBm
Gp = 18 dB - 4.8 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 24.0 - dB
Gp = 35 dB - 24.8 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 18.0 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

Table 12. Characteristics low gain mode

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 175 199 230 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 6.1 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 18.4 - dB
Gp(flat) power gain flatness 815 MHz  f  840 MHz; 3 dB  Gp  17 dB - 0.0 - dB
NF noise figure Gp = 17 dB - 10.4 - dB
Gp = 3 dB - 22.0 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz -
Gp = 17 dB - 21.7 - dBm
Gp = 12 dB - 26.9 - dBm
Gp = 11 dB - 27.7 - dBm
Gp = 3 dB - 31.4 - dBm
Pi(1dB) input power at 1 dB gain compression Gp = 17 dB - 5.8 - dBm
Gp = 12 dB - 10.5 - dBm
Gp = 11 dB - 11.9 - dBm
Gp = 3 dB - 13.6 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 25.5 - dB
Gp = 17 dB - 24.0 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 19.4 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 9 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

8.4 Characteristics at f = 850 MHz

Table 13. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 197 229 267 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 12.7 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 36.7 - dB
Gp(flat) power gain flatness 825 MHz  f  865 MHz; 18 dB  Gp  35 dB - 0.1 - dB
NF noise figure Vctrl(Gp) = 0 V (maximum power gain) - 0.64 - dB
Gp = 35 dB - 0.77 1.05 dB
Gp = 18 dB - 5.54 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB 0.5 1.6 - dBm
Gp = 30 dB - 4.5 - dBm
Gp = 29 dB - 4.7 - dBm
Gp = 18 dB - 6.0 - dBm
Pi(1dB) input power at 1 dB Gp = 35 dB 13.5 12.4 - dBm
gain compression Gp = 30 dB - 7.6 - dBm
Gp = 29 dB - 6.9 - dBm
Gp = 18 dB - 5.1 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 25.1 - dB
Gp = 35 dB - 26.5 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 17.5 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

Table 14. Characteristics low gain mode

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
ICC(tot) total supply current 175 199 230 mA
Gp(min) minimum power gain Vctrl(Gp) = 3.3 V - 6.0 - dB
Gp(max) maximum power gain Vctrl(Gp) = 0 V - 18.3 - dB
Gp(flat) power gain flatness 825 MHz  f  865 MHz; 3 dB  Gp  17 dB - 0.0 - dB
NF noise figure Gp = 17 dB - 10.4 - dB
Gp = 3 dB - 22.1 - dB
IP3I input third-order intercept point 2-tone; tone-spacing = 1.0 MHz -
Gp = 17 dB - 21.6 - dBm
Gp = 12 dB - 26.5 - dBm
Gp = 11 dB - 27.5 - dBm
Gp = 3 dB - 31.4 - dBm

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Product data sheet Rev. 2 — 29 January 2015 10 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

Table 14. Characteristics low gain mode …continued

GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
Pi(1dB) input power at 1 dB gain compression Gp = 17 dB - 5.7 - dBm
Gp = 12 dB - 10.5 - dBm
Gp = 11 dB - 11.2 - dBm
Gp = 3 dB - 13.5 - dBm
RLin input return loss Vctrl(Gp) = 0 V (maximum power gain) - 25.1 - dB
Gp = 17 dB - 23.5 - dB
RLout output return loss Vctrl(Gp) = 0 V (maximum power gain) - 18.7 - dB
K Rollett stability factor 0 GHz  f  12.75 GHz 1 - -

8.5 Gain switch truth table

Table 15. Gain switch truth table
VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C
Gain mode GS1 GS2
logic VGS1 logic VGS2
high gain mode LOW 0 V to 0.5 V HIGH 2 V to 3.3 V
low gain mode HIGH 2 V to 3.3 V LOW 0 V to 0.5 V

8.6 Graphs

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GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V. Vctrl(Gp) = 0 V.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 3. Power gain as a function of frequency in high Fig 4. Power gain as a function of frequency in low
gain mode; typical values gain mode; typical values

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 11 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
5/LQ 5/LQ
G% G%




 

 




 



 
           
I *+] I *+]

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V. Vctrl(Gp) = 0 V.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 5. Input return loss as a function of frequency in Fig 6. Input return loss as a function of frequency in
high gain mode; typical values low gain mode; typical values

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6
6

6
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6

 

 
         
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GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V; Tamb = 25 C. Vctrl(Gp) = 0 V; Tamb = 25 C.
Fig 7. S-parameters as a function of frequency in Fig 8. S-parameters as a function of frequency in low
high gain mode; typical values gain mode; typical values

BGU7061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 2 — 29 January 2015 12 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
. .

 

  



 




 

 
               
I *+] I *+]

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V. Vctrl(Gp) = 0 V.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 9. Rollet stability factor as a function of Fig 10. Rollet stability factor as a function of
frequency in high gain mode; typical values frequency in low gain mode; typical values

DDD DDD
 
,3, ,3,
G%P G%P




  
 
  







 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz. f = 900 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 11. Input third-order intercept point as a function Fig 12. Input third-order intercept point as a function
of power gain in high gain mode; typical of power gain in low gain mode; typical values
values

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Product data sheet Rev. 2 — 29 January 2015 13 of 27

NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
,3, ,3,
G%P G%P




 

 

 
 





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz. f = 788 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 13. Input third-order intercept point as a function Fig 14. Input third-order intercept point as a function
of power gain in high gain mode; typical of power gain in low gain mode; typical values
values

DDD DDD
 
,3, ,3,
G%P G%P

  
 
 











 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz. f = 830 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 15. Input third-order intercept point as a function Fig 16. Input third-order intercept point as a function
of power gain in high gain mode; typical of power gain in low gain mode; typical values
values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
,3, ,3,
G%P G%P




 

 

 
 





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz. f = 850 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 17. Input third-order intercept point as a function Fig 18. Input third-order intercept point as a function
of power gain in high gain mode; typical of power gain in low gain mode; typical values
values

DDD DDD
 
3L G% 3L G%
G%P G%P



 
 
   





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz. f = 900 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 19. Input power at 1 dB gain compression as a Fig 20. Input power at 1 dB gain compression as a
function of power gain in high gain mode; function of power gain in low gain mode;
typical values typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
3L G% 3L G%
G%P G%P



 
 
   





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz. f = 788 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 21. Input power at 1 dB gain compression as a Fig 22. Input power at 1 dB gain compression as a
function of power gain in high gain mode; function of power gain in low gain mode;
typical values typical values

DDD DDD
 
3L G% 3L G%
G%P G%P



 
 
   





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz. f = 830 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 23. Input power at 1 dB gain compression as a Fig 24. Input power at 1 dB gain compression as a
function of power gain in high gain mode; function of power gain in low gain mode;
typical values typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
3L G% 3L G%
G%P G%P



 
 
   





 
              
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz. f = 850 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 25. Input power at 1 dB gain compression as a Fig 26. Input power at 1 dB gain compression as a
function of power gain in high gain mode; function of power gain in low gain mode;
typical values typical values

DDD DDD
 
1) 1)
G% G%

 

 
 
 
 

 

 

 
                 
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz. f = 900 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 27. Noise figure as a function of power gain in Fig 28. Noise figure as a function of power gain in low
high gain mode; typical values gain mode; typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
1) 1)
G% G%

 

 
 
 
 

 

 

 
                 
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz. f = 788 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 29. Noise figure as a function of power gain in Fig 30. Noise figure as a function of power gain in low
high gain mode; typical values gain mode; typical values

DDD DDD
 
1) 1)
G% G%

 

  



 




 

 
                 
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz. f = 830 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 31. Noise figure as a function of power gain in Fig 32. Noise figure as a function of power gain in low
high gain mode; typical values gain mode; typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
1) 1)
G% G%

 

  



 




 

 
                 
*S G% *S G%

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz. f = 850 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 33. Noise figure as a function of power gain in Fig 34. Noise figure as a function of power gain in low
high gain mode; typical values gain mode; typical values

DDD DDD
 
*S *S
G% G%



 
 
   





 
               
9FWUO *S  9 9FWUO *S  9

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz. f = 900 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 35. Power gain as a function of power gain control Fig 36. Power gain as a function of power gain control
voltage in high gain mode; typical values voltage in low gain mode; typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
*S *S
G% G%



 
 
   





 
               
9FWUO *S  9 9FWUO *S  9

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz. f = 788 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 37. Power gain as a function of power gain control Fig 38. Power gain as a function of power gain control
voltage in high gain mode; typical values voltage in low gain mode; typical values

DDD DDD
 
*S *S
G% G%



 
 
   





 
               
9FWUO *S  9 9FWUO *S  9

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz. f = 830 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 39. Power gain as a function of power gain control Fig 40. Power gain as a function of power gain control
voltage in high gain mode; typical values voltage in low gain mode; typical values

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

DDD DDD
 
*S *S
G% G%



 
 
   





 
               
9FWUO *S  9 9FWUO *S  9

GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V; GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz. f = 850 MHz.
(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = +25 C (2) Tamb = +25 C
(3) Tamb = +85 C (3) Tamb = +85 C
Fig 41. Power gain as a function of power gain control Fig 42. Power gain as a function of power gain control
voltage in high gain mode; typical values voltage in low gain mode; typical values

9. Application information
Table 16. List of components
For application circuit see Figure 43.
Component Description Value Remarks
C1, C2 capacitor 1 nF [1] 0402
C3, C4, C5, C6, C12 capacitor 100 pF [1] 0402
C7, C8, C9, C10, capacitor optional
C11, C17 capacitor 100 nF [1] 0402
C13, C14, C15, C16 capacitor optional
L1, L2 inductor 10 nH [2] 0402

[1] Murata GRM1555 series.

[2] Murata LQG15 series.

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

9&& 9&&

& &

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& &

& &

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9&&

9&&
*1'

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5)B,1387 & & 5)B287387

5)B,1   5)B287

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 9*$ 

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 *DLQBFWUO
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QF

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See Table 16 for a list of components.

Fig 43. Schematic layout for application circuit

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Analog high linearity low noise variable gain amplifier

10. Package outline

+/4)15SODVWLFWKHUPDOHQKDQFHGORZSURILOHTXDGIODWSDFNDJHQROHDGVWHUPLQDOVERG\[[PP 627

' % $

WHUPLQDO
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Fig 44. Package outline SOT1301-1 (HLQFN16R)

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

11. Abbreviations
Table 17. Abbreviations
Acronym Description
3G 3rd Generation
ESD ElectroStatic Discharge
LNA Low Noise Amplifier
LTE Long Term Evolution

12. Revision history

Table 18. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGU7061 v.2 20150129 Product data sheet - BGU7061 v.1
Modifications: • Section 1.1 on page 1: the frequency range has been extended to go from 770 MHz to 915 MHz
• Section 1.4 on page 2: data measured at a frequency of 788 MHz has been added.
• Section 1.4 on page 2: IP3i data measured at frequencies 830 MHz and 850 MHz have been
changed.
• Section 8.2 on page 7: section has been added
• Table 11 on page 8: IP3i data have been changed
• Table 13 on page 10: IP3i data have been changed
• Figure 3 on page 11: figure has been updated
• Figure 4 on page 11: figure has been updated
• Figure 5 on page 12: figure has been updated
• Figure 6 on page 12: figure has been updated
• Figure 13 on page 14: figure has been added
• Figure 14 on page 14: figure has been added
• Figure 21 on page 16: figure has been added
• Figure 22 on page 16: figure has been added
• Figure 29 on page 18: figure has been added
• Figure 30 on page 18: figure has been added
• Figure 37 on page 20: figure has been added
• Figure 38 on page 20: figure has been added
BGU7061 v.1 20140121 Product data sheet - -

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Analog high linearity low noise variable gain amplifier

13. Legal information

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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

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Draft — The document is a draft version only. The content is still under
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Applications — Applications that are described herein for any of these
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full information. For detailed and full information see the relevant full data
specified use without further testing or modification.
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Product specification — The information and data provided in a Product design. It is customer’s sole responsibility to determine whether the NXP
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
the Recommended operating conditions section (if present) or the
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Right to make changes — NXP Semiconductors reserves the right to make applying the customer’s general terms and conditions with regard to the
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Analog high linearity low noise variable gain amplifier

Export control — This document as well as the item(s) described herein product for such automotive applications, use and specifications, and (b)
may be subject to export control regulations. Export might require a prior whenever customer uses the product for automotive applications beyond
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Quick reference data — The Quick reference data is an extract of the
liability, damages or failed product claims resulting from customer design and
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14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

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NXP Semiconductors BGU7061
Analog high linearity low noise variable gain amplifier

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 4
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
6 Recommended operating conditions. . . . . . . . 5
7 Thermal characteristics . . . . . . . . . . . . . . . . . . 5
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Characteristics at f = 900 MHz . . . . . . . . . . . . . 6
8.2 Characteristics at f = 788 MHz . . . . . . . . . . . . . 7
8.3 Characteristics at f = 830 MHz . . . . . . . . . . . . . 8
8.4 Characteristics at f = 850 MHz . . . . . . . . . . . . 10
8.5 Gain switch truth table . . . . . . . . . . . . . . . . . . 11
8.6 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Application information. . . . . . . . . . . . . . . . . . 21
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
14 Contact information. . . . . . . . . . . . . . . . . . . . . 26
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP Semiconductors N.V. 2015. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 January 2015
Document identifier: BGU7061