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BE Assignment

The document contains short questions and long questions about basic electronics topics such as diodes, rectifiers, transistors, and feedback. The short questions cover diode characteristics, rectifier calculations, transistor configurations and biasing, and feedback concepts. The long questions involve more in-depth calculations and explanations for rectifier circuits, transistor biasing networks, and feedback amplifier analysis.

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0% found this document useful (0 votes)
56 views5 pages

BE Assignment

The document contains short questions and long questions about basic electronics topics such as diodes, rectifiers, transistors, and feedback. The short questions cover diode characteristics, rectifier calculations, transistor configurations and biasing, and feedback concepts. The long questions involve more in-depth calculations and explanations for rectifier circuits, transistor biasing networks, and feedback amplifier analysis.

Uploaded by

msanjalin3294
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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BASIC ELECTRONICS

ASSIGNMENT-2
SHORT QUESTIONS
1. A silicon diode has reverse saturation current of 2.5 μA at 300 k. Find forward voltage for a forward
current of 10 mA. ✔
2. The reverse bias saturation current for a P-N junction diode is 1 μA at 300k. Determine its ac
resistance at 150 mv forward bias. ✔
3. Write the difference between half wave & full wave rectifier.
4. What is the difference between avalanche breakdown & Zener breakdown.
5. Prove that the dynamic ac resistance is 26mv/ID
6. The leakage current in a certain diode is 25 μA at 25° C. Find the change in temperature required to
have leakage current of 40 μA. ✔
7. Define and derive ripple factor for half and full wave rectifier?
8. Write the disadvantages of center tapped rectifier.
9. Write the Advantage & disadvantage of Si over Ge.
10. Write the difference between clipper and clamper

FOCUSED SHORT QUESTION

1. Determine V0& ID

2. Calculate V0 and draw the output wave form.

3. Determine V0& ID in both the circuits given below.


4. Draw neat diagram and explain the operation of bridge rectifier and derive its efficiency.
5. Calculate V0 and draw the output wave form.

Input signal is +20 to -20 sinusoidal signal. Diode is Si type. V==5 volt.

LONG QUESTION

1. a) AC voltage of 230V is applied to a half wave rectifier circuit through a transformer to


turn ratio 10:1.The load resistance value is 1kΩ and diode internal resistance value is 20
Ω.Determine Vm , Im, Iavg, Irms.

b) Calculate efficiency, ripple factor, form factor of the above question

2. a )AC voltage of 230 V rms applied to a bridge full wave rectifier circuit through a
transformer to turn ratio 10:1 and. load resistance is 2kΩ.if the diode forward resistance
20Ω then calculateVm , Im, Idc, Iac, input ac power, output dc power.
b) Calculate efficiency, ripple factor of the above question.

3.a ) Calculate V0 and draw the output wave form where V=5V, input signal Vi= 20Sinθ .
Diode is ideal diode.

ASSIGNMENT-3
SHORT QUESTION
1. Why transistor is called as Bipolar Junction Transistor? And draw Ebers Mole model of
transistor.
2. The emitter current IE in a transistor is 3 mA. If the leakage current ICBO is 5 μA. α = 0.98.
Calculate the collector & base current.
3. In a transistor α = 0.995 , IE =10 mA & leakage current ICBO = 0.5 μA. Determine IC, IB,
ICEO.
4. IN a transistor circuit IE = 5mA , IC = 4.95mA , ICEO = 200 μA. Calculate β & ICBO.
5. What is the relationship between α,β, γ.
6. Which biasing circuit is most stable one & why?
7. Write the difference between BJT and FET?
8. What do you mean by proper biasing of transistor?
9. Why CE BJT configuration is mostly used?
10. Why different types of transistor configuration are made? And draw common emitter
configuration with proper bis potential.
11. Define the d.c current gain of all transistor configuration of BJT. Find the relation between
α,β.
12. DeriveeIB,IC,IE,VCE,VC for voltage divider circuit.

FOCUSED QUESTION

1. Write the characteristics of CE and CC transistor configuration with neat diagram using n-
p-n transistor.
2. Write the three current equation of BJT. prove that relation between α,β,γ .
3. calculate IB,IC,IE,VCE,VC

4. Explain with suitable example transistor acts as an amplifier?


5.Determine IB, IC, VC , VB for the network. Given β=90.
LONG QUESTION

1. a ) Determine IB, IC, VC , VB,VCE for the network. Given β=120.

b )Draw and Explain the characteristics of Common Base , common collector and common
emitter configuration.

2. a ) Determine IB, IC, VC , VB,VCE for the network. Given β=180

3.a) Describe the Voltage divider biasing circuit of BJT


b) ) Describe the Emitter feed back biasing circuit of BJT

Assignment-4

SHORTQUESTION

1. Write the advantages of negative feedback


2. Write down the Shokley`s equation & define each term associated with it.
3. What is barkhausencriteria on oscillator.
4. Calculate the gain of negative feedback circuit.
5. Write the difference between FET and BJT?
FOCUSED SHORT QUESTION

1. Explain construction of n-channel JFET


2. With a negative voltage feedback, an amplifier gives an output of 10 V with an input of 0.5
V. When feedback is removed, it requires 0.25 V input for the same output. Calculate (i)
gain without feedback (ii) feedback fraction

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