BC550CG.

BC550CG
BC549C, BC550C

Low Noise Transistors

NPN Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS
Rating Symbol Value Unit 2
BASE
Collector −Emitter Voltage VCEO Vdc
BC549C 30
BC550C 45 3
EMITTER
Collector −Base Voltage VCBO Vdc
BC549C 30
BC550C 50
Emitter −Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC 100 Vdc
Total Device Dissipation @ TA = 25°C PD 625 mW TO−92
Derate above = 25°C 5.0 mW/°C
CASE 29
Total Device Dissipation @ TA = 25°C PD 1.5 W STYLE 17
12
Derate above = 25°C 12 mW/°C
3
Operating and Storage Junction TJ, Tstg −55 to +150 °C STRAIGHT LEAD
Temperature Range BULK PACK

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum BC5x
Ratings are stress ratings only. Functional operation above the Recommended yC
Operating Conditions is not implied. Extended exposure to stresses above the AYWW G
Recommended Operating Conditions may affect device reliability. G

BC5xyC = Device Code

x = 4 or 5
y = 9 or 0
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

BC549CG TO−92 5000 Units / Bulk

(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please BC550CG TO−92 5000 Units / Bulk
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

March, 2007 − Rev. 2 BC550C/D
 BC549C, BC550C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) 45 − −

Collector −Base Breakdown Voltage V(BR)CBO Vdc

(IC = 10 mAdc, IE = 0) 50 − −

Emitter −Base Breakdown Voltage V(BR)EBO Vdc

(IE = 10 mAdc, IC = 0) 5.0 − −

Collector Cutoff Current ICBO

(VCB = 30 V, IE = 0) − − 15 nAdc
(VCB = 30 V, IE = 0, TA = +125°C) − − 5.0 mAdc
Emitter Cutoff Current IEBO nAdc
(VEB = 4.0 Vdc, IC = 0) − − 15

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 10 mAdc, VCE = 5.0 Vdc) 100 270 −
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 420 500 800
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 0.5 mAdc) − 0.075 0.25
(IC = 10 mAdc, IB = see note 1) − 0.3 0.6
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2) − 0.25 0.6
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 100 mAdc, IB = 5.0 mAdc) − 1.1 −

Base−Emitter On Voltage VBE(on) Vdc

(IC = 10 mAdc, VCE = 5.0 Vdc) − 0.52 −
(IC = 100 mAdc, VCE = 5.0 Vdc) − 0.55 −
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.62 0.7
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) − 250 −

Collector−Base Capacitance Ccbo pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 2.5 −

Small−Signal Current Gain hfe −

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) 450 600 900

Noise Figure dB
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) NF1 − 0.6 2.5
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF2 − − 10
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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 BC549C, BC550C

2.0 1.0
VCE = 10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN
1.5 0.9
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain Figure 3. “Saturation” and “On” Voltages

f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

10
400
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF) 5.0 Cib

100
80 VCE = 10 V
TA = 25°C 3.0
60
Cob
40
30 2.0

20

1.0
0.5 0.7 1.0 2.0 5.0 7.0 10 20 50 0.4 0.6 1.0 2.0 4.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Current−Gain — Bandwidth Product Figure 5. Capacitance

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C

130

120
0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

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3
 BC549C, BC550C

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
 BC550CG. BC550CG

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