VHB40-12F5

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The VHB40-12F5 is Designed for
Class C Amplifier Applications in VHF
Mobile Radios. PACKAGE STYLE .500 6L FLG
1
C A
FEATURES:
3 3 2x Ø N

• PG = 9.5 dB Typ. at 40 W /175 MHz D

FU LL R

• ηC = 60% Typ. at 40 W /175 MHz

• Omnigold™ Metalization System B
2
E
.725/18,42
G F

M
MAXIMUM RATINGS H I
K
L
J

IC 5.0 A D IM M IN IM U M
inches / m m
M AXIM U M
inches / m m

A .150 / 3.43 .160 / 4.06

VCBO 36 V B .045 / 1.14
C .210 / 5.33 .220 / 5.59
VCEO 18 V D .835 / 21.21 .865 / 21.97
E .200 / 5.08 .210 / 5.33

VEBO 4.0 V F
G
.490 / 12.45
.003 / 0.08
.510 / 12.95
.007 / 0.18
H .125 / 3.18
PDISS 70 W @ TC = 25 °C I .725 / 18.42
J .970 / 24.64 .980 / 24.89

TJ -65 °C to +200 °C K .090 / 2.29 .105 / 2.67

L .150 / 3.81 .170 / 4.32
.285 / 7.24
TSTG -65 °C to +150 °C M
N .120 / 3.05 .135 / 3.43

θJC 2.5 °C/W

1 = COLLECTOR 2 = BASE 3 = EMITTER

CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 50 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 15 V 5.0 mA
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---

Cob VCB = 12.5 V f = 1.0 MHz 135 pF

PG 8.5 dB
VCC = 12.5 V POUT = 40 W f = 175 MHz
ηC 60 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
This datasheet has been downloaded from http://www.digchip.com at this page