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2 SC 3927

This document provides information about the 2SC3927 isc Silicon NPN Power Transistor. It has a high collector-emitter breakdown voltage of 550V minimum, high switching speed, and high reliability. It is designed for switching regulator and general purpose applications. Its absolute maximum ratings include a collector-emitter voltage of 550V, collector current of 10A continuous and 15A peak, and junction temperature of 150°C.

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103 views2 pages

2 SC 3927

This document provides information about the 2SC3927 isc Silicon NPN Power Transistor. It has a high collector-emitter breakdown voltage of 550V minimum, high switching speed, and high reliability. It is designed for switching regulator and general purpose applications. Its absolute maximum ratings include a collector-emitter voltage of 550V, collector current of 10A continuous and 15A peak, and junction temperature of 150°C.

Uploaded by

Jimmy Piña
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SC3927

DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 550V(Min)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for switching regulator and general purpose
applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 900 V

VCEO Collector-Emitter Voltage 550 V

VEBO Emitter-Base voltage 7 V

IC Collector Current-Continuous 10 A

ICM Collector Current-Peak 15 A

IB Base Current-Continuous 5 A

Collector Power Dissipation


PC 120 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SC3927

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 550 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.2 V

ICBO Collector Cutoff Current VCB= 800V ; IE= 0 0.1 mA

IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA

hFE DC Current Gain IC= 5A ; VCE= 4V 10 28

fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 6 MHz

COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 105 pF

Switching times

ton Turn-on Time 1.0 μs

IC= 5A , IB1= 0.75A; IB2= -1.5A


tstg Storage Time 5.0 μs
RL= 50Ω; VCC= 250V

tf Fall Time 0.5 μs

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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