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By raising the light transmission amount of each pixel, twice the resolution is achieved for the same
transmittance. The optical microscope image analysis for the fabricated memristor devices was
proceeded with a magnification of 150. Three years ago, it was also used to drive large OLED
televisions, which was considered a major breakthrough. Thus, the IGZO:N memristor devices
represent a highly improved operation stability with small standard deviations during repeated DC
BRS endurance evaluation, as compared to IGZO memristors. Journal of Low Power Electronics and
Applications (JLPEA). High-Performance Resistive Switching in Solution-Derived IGZO:N
Memristors by Microwave-Assisted Nitridation. Therefore, the microwave-assisted nitrogen
synthesis effect on solution-derived IGZO nanocomposites was systematically evaluated through the
chemical solution etching test, optical absorption coefficient analysis, and X-ray photoelectron
spectroscopy (XPS). The principal patentee, JST, handles the granting of licenses. So far, it has
featured creations such as the DRAM, DVD, CD, and Li-ion rechargeable battery. The figure of
merit (FOM) was also calculated to characterize the performance of the triple-layer structures.
Average resistance values and standard deviations of multi-level states according to the V stop step
in IGZO:N memristor devices. Figure 8 d represents the relationship between the average resistance
values of HRS and the magnitude of the V stop value. The reliable multi-level properties and
nonvolatility of IGZO:N nanocomposites suggest the possibility of gradual synaptic weight
modulation through electrical stimulations. These results in Figure 9 show that the carrier
concentration critically increased and the mobility slightly increased as the thickness of IGZO films
increased, independent of the substrate used. As a result, microwave-assisted nitridation technology
is an effective synthesis technology for oxide-based RS layers, and it can improve the memristive
switching characteristics for potential synaptic electronics. In Figure 2 a, the IGZO film was etched
by the BOE treatment and the thickness of the initial IGZO film decreased. Figure 9 b,d depict the
weight modulation stability of IGZO and IGZO:N memristor devices for five consecutive stimulus
cycles (a total of 5 ? 10 2 synaptic pulses) evaluations. The sequential DC voltage loop of 0 V?1.5
V?0 V??1.0 V?0 V (in 0.05 V step) was applied to the Ti-TE, and the current flow through the RS
layer was measured when the Pt-BE was grounded, as shown in Figure 1 a. Figure 7 shows the
multi-level resistance characteristics for the IGZO memristor devices. The primary outcome of this
study was the improvement in memristive switching properties, which was attained by applying
microwave-assisted nitridation technology on the solution-derived MeO x -based RS layer.
Application of IGZO TFTs to high-definition large LCD televisions are expected to start soon.
European Journal of Investigation in Health, Psychology and Education (EJIHPE). As a result, based
on the reliable multi-level properties and stable nonvolatility of the IGZO:N nanocomposite, the
synaptic weight was successfully modulated in IGZO:N memristor devices, indicating the potential
applications in artificial synaptic electronics. 4. Conclusions We proposed two-terminal memristor
devices using solution-derived IGZO:N nanocomposites as an RS layer, and we systematically
evaluated the multi-level RS characteristics and artificial synapse operations. This indicates the
reliable multi-level BRS operations and stable distribution of multi-level resistance according to the
V stop value. XPS binding energy values and atomic concentrations for each metal species in IGZO
and IGZO:N nanocomposites. Editors select a small number of articles recently published in the
journal that they believe will be particularly. In order to be human-readable, please install an RSS
reader. The nonvolatile multi-level operations in a single memristor cell can demonstrate the gradual
increase and decrease in the conductance in the RS layer. In the 1960s, it was reported that
modulating the electric current was possible when zinc oxide, tin oxide, and indium oxide were
formed into TFT structures. International Journal of Translational Medicine (IJTM).
It was found that IGZO:N memristors not only had a superior BRS endurance during the 10 3 DC
cycling tests and a stable resistance distribution compared to IGZO memristors, but they also
exhibited reliable multi-level BRS characteristics through the modulation of the V stop value. As
Figure 8 a shows, as glass was used as substrate, the maximum transmittance is measured to be
85.6%, 88.1%, 83.9%, and 82.8% as the thickness of ?-IGZO films were 27, 41, 55, and 69 nm,
respectively. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by
Microwave-Assisted Nitridation. Previous Article in Journal Carbon Nanotubes Decrease the
Negative Impact of Alternaria solani in Tomato Crop. Journal of Experimental and Theoretical
Analyses (JETA). Insets indicate the calculated operation power for the set and reset processes. High
purity raw materials of In 2 O 3, Ga 2 O 3, and ZnO with purity higher than 99.9% were weighed
according to the formula composition In 2 O 3 -Ga 2 O 3 -2 ZnO (abbreviated as IGZO) in mole
ratio and ball-milled with alcohol for 24 h in polyethylene (PE) bottles. Their performance, however,
was poor, and reports of research on organic TFTs were mostly nonexistent until around 2000.
Multiple requests from the same IP address are counted as one view. Multiple requests from the same
IP address are counted as one view. This market is rapidly expanding, as can be seen from the
products being released by South Korean and Japanese electronics manufacturers, which now
dominate store shelves. Please let us know what you think of our products and services. Table 4 lists
the average resistance values and standard deviations of multi-level states according to the V stop
step. Field emission scanning electron microscopy measurements of the triple-layer structures
revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. Challenges and Applications
of Emerging Nonvolatile Memory Devices. This allows for detection of even the faintest signals,
enabling highly accurate PCAP (Projected Capacitive) touch and pen input. A new field called oxide
electronics came into existence in the early noughties, examining oxides as electronic materials.
However, while amorphous materials were the optimal choice for forming thin, homogeneous film,
high carrier concentration and other issues due to structural disorder arose, for the most part
preventing electric current modulation by electric fields. Figure 8 d represents the relationship
between the average resistance values of HRS and the magnitude of the V stop value. The sputtering
deposition parameters of ?-IGZO film and Ag thin metal film were base pressure of 3 ? 10 ?6 torr, Ar
flow rate of 20 sccm, working pressure of 5 ? 10 ?2 torr, and target-substrate distance of 5 cm, and
RF power for ?-IGZO was 100 W and for Ag was 40 W. For more information on the journal
statistics, click here. The total BRS operation parameters evaluated by the endurance test are listed in
Table 3 for IGZO and IGZO:N memristor devices. International Journal of Translational Medicine
(IJTM). Insets indicate the calculated operation power for the set and reset processes. As a result,
microwave-assisted nitridation technology is an effective synthesis technology for oxide-based RS
layers, and it can improve the memristive switching characteristics for potential synaptic electronics.
Visit our dedicated information section to learn more about MDPI. XPS binding energy values and
atomic concentrations for each metal species in IGZO and IGZO:N nanocomposites. ISPRS
International Journal of Geo-Information (IJGI). Such displays are installed on the first floor of the
Materials Research Center for Element Strategy and the foyer of the Laboratory for Materials and
Structures at Tokyo Tech. Next Article in Special Issue Hybrid Nanocomposite Thin Films for
Photovoltaic Applications: A Review.
The particle sizes of nano-crystallization grains increased with the increase of thickness of Ag film.
International Journal of Turbomachinery, Propulsion and Power (IJTPP). Utilizing this improved
pixel performance, IGZO reduces power consumption to one-fifth or even one-tenth that of
conventional screens, which contributes to longer product battery life. Average resistance values and
standard deviations of multi-level states according to the V stop step in IGZO:N memristor devices.
As the applied bias increased above the transition voltage ( V tr ) in region (2), the density of
injected carriers increased, compared to the thermally generated free charge carriers. Field emission
scanning electron microscopy measurements of the triple-layer structures revealed that the
thicknesses of the Ag layers ranged from 13 to 41 nm. Journal of Manufacturing and Materials
Processing (JMMP). So far, it has featured creations such as the DRAM, DVD, CD, and Li-ion
rechargeable battery. In the 1960s, it was reported that modulating the electric current was possible
when zinc oxide, tin oxide, and indium oxide were formed into TFT structures. In the positive-
voltage region (1), the current through the RS layer increased with the voltage. Further, the solution-
derived IGZO:N nanocomposites RS layer, which is the most significant part for memristor
operations, was formed as follows: The synthesized 1:3:1 molar-ratio IGZO solution was spin-coated
on the BE layer at 500 rpm for 10 s, followed by 2000 rpm for 30 s. After proving this hypothesis
through experiments and calculations, he started test-producing TFTs. In order to be human-readable,
please install an RSS reader. On ( a ) glass substrates; and ( b ) PET substrates. This LRS was
maintained until the reset process, wherein the CFs were ruptured due to the negatively applied bias
in Figure 6 a. 3.5. Multi-Level Operations and Synaptic Weight Modulation The memristor devices
have received significant attention in recent years because of their use in artificial synapse
applications and their analog synaptic weight modulation possibility. Journal of Low Power
Electronics and Applications (JLPEA). Therefore, a wide variety of oxide-based materials have been
researched to improve the memristive switching characteristics. Note that from the first issue of
2016, this journal uses article numbers instead of page numbers. In the following year, they published
in Nature that amorphous thin film could also produce mobility of around 10 cm2 V-1 s-1. The FOM
value was also calculated using the Equations (4) and (5) with an Ag film thickness of 13 nm and as
a function of thickness of ?-IGZO films, and the calculated results are shown in Figure 10. Figure 5
c,f show the cumulative distribution of the set voltage ( V set ) and reset voltage ( V reset ) for BRS
operation of the IGZO and IGZO:N memristor devices, respectively. The carrier concentration
increased from 4.09 ? 10 21 cm ?3 to 5.99 ? 10 21 cm ?3 as thickness of Ag film increased from 10
nm to 16 nm. However, as the thickness of Ag is further increased, the transmittance ratio of OMO
triple-layer structure decreases due to the opaqueness of the thicker Ag metal film. Three years ago,
it was also used to drive large OLED televisions, which was considered a major breakthrough.
Therefore, the average values of V set, V reset, P set, and P reset were 0.71 V, ?0.74 V, 8.23 mW,
and 7.06 mW for the IGZO memristors, and 0.78 V, ?0.67 V, 7.82 mW, and 5.95 mW for IGZO:N
memristors, respectively. Ag was used because of its lower absorption and resistivity. This market is
rapidly expanding, as can be seen from the products being released by South Korean and Japanese
electronics manufacturers, which now dominate store shelves. International Journal of
Turbomachinery, Propulsion and Power (IJTPP). Journal of Cardiovascular Development and Disease
(JCDD). The MWA process provided effective volumetric annealing on the solution-derived IGZO
layer in a short time through the conversion of electromagnetic energy to thermal energy.
Tropical Medicine and Infectious Disease (TropicalMed). Insets indicate the calculated operation
power for the set and reset processes. In 2003, Hosono and his collaborators reported in Science that
crystalline epitaxial thin film could produce mobility of around 80 cm 2 V -1 s -1. The decrease in
resistivity is mainly due to the increase of carrier concentration and carrier mobility. As a result, the
IGZO:N memristor devices had a more stable resistance distribution and a larger resistance
difference in the LRS and HRS compared to the IGZO memristor devices. The sequential DC
voltage loop of 0 V?1.5 V?0 V??1.0 V?0 V (in 0.05 V step) was applied to the Ti-TE, and the
current flow through the RS layer was measured when the Pt-BE was grounded, as shown in Figure
1 a. Furthermore, the multi-resistance values were linearly controlled depending on the magnitude of
the V stop value, and they exhibited stable nonvolatile retention characteristics even under the high-
temperature condition. As explained in previous reports, at the beginning of deposition, Ag particles
were deposited as separate islands randomly distributed on bottom ?-IGZO film. Previous Article in
Journal Acceleration of Intended Pozzolanic Reaction under Initial Thermal Treatment for
Developing Cementless Fly Ash Based Mortar. As Figure 8 a shows, as glass was used as substrate,
the maximum transmittance is measured to be 85.6%, 88.1%, 83.9%, and 82.8% as the thickness of
?-IGZO films were 27, 41, 55, and 69 nm, respectively. In Figure 9 b, the conductance of IGZO
memristor devices was unstably modulated as the pulse number increased. To investigate the gradual
conductance modulation according to the electrical pulse stimulations, which is essential for
memristive switching, the synaptic weight increase (potentiation) and decrease (depression)
properties were evaluated. In order to secure stable memristive switching characteristics, IGZO:N
nanocomposites were synthesized through the microwave-assisted nitridation of solution-derived
IGZO thin films, and the resulting improvement in synaptic characteristics was systematically
evaluated. Ag was used because of its lower absorption and resistivity. High-Performance Resistive
Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation. Funding
The research has been conducted by the Research Grant of Kwangwoon University in 2021 and by
the excellent research support project of Kwangwoon University in 2021. In the following year, they
published in Nature that amorphous thin film could also produce mobility of around 10 cm2 V-1 s-1.
XPS binding energy values and atomic concentrations for O 1s peaks in IGZO and IGZO:N
nanocomposites. All articles published by MDPI are made immediately available worldwide under
an open access license. No special. Thin Ag layers with different thicknesses were inserted between
two IGZO layers to form a triple-layer structure. The transmittance ratio at 480 nm was measured to
be 80.6, 82.2, 86.3, 84.9, and 82.8% for the 10, 11.5, 13, 14.5, and 16 nm Ag thicknesses,
respectively. Journal of Manufacturing and Materials Processing (JMMP). As a result, based on the
reliable multi-level properties and stable nonvolatility of the IGZO:N nanocomposite, the synaptic
weight was successfully modulated in IGZO:N memristor devices, indicating the potential
applications in artificial synaptic electronics. 4. Conclusions We proposed two-terminal memristor
devices using solution-derived IGZO:N nanocomposites as an RS layer, and we systematically
evaluated the multi-level RS characteristics and artificial synapse operations. The electrical
characteristics were analyzed with an Agilent 4156B Precision Semiconductor Parameter Analyzer
(Hewlett-Packard Corp., Palo Alto, CA, USA). In the fundamental bandgap features of IGZO
nanocomposites, the conduction band ( E c ) was mainly composed of the metal cation-related s -
orbital, especially In 5 s -orbitals, and the highest valence band ( E v ) mainly formed the oxygen-
related 2p -orbital. Journal of Low Power Electronics and Applications (JLPEA). Total BRS
operation parameters of IGZO and IGZO:N memristor devices. In IGZO memristors, each resistance
value changed irregularly and the average values with standard deviations (SDs) of the HRS and
LRS were 4.02 ? 10 2 ? (SD: 7.52 ? 10 2 ?) and 6.70 ? 10 1 ? (SD: 1.04 ? 10 1 ?), respectively. When
nitrogen was incorporated into the IGZO by an annealing process under a nitrogen ambient, the
nitrogen atoms partially occupied the oxygen vacancies and bonded with the inactive interstitial
oxygen. Further, the solution-derived IGZO:N nanocomposites RS layer, which is the most
significant part for memristor operations, was formed as follows: The synthesized 1:3:1 molar-ratio
IGZO solution was spin-coated on the BE layer at 500 rpm for 10 s, followed by 2000 rpm for 30 s.
This work was also supported by the National Research Foundation of Korea (NRF) grant funded by
the Korea government (MSIT) (No. 2020R1A2C1007586). Informed Consent Statement Not
applicable. On the other hand, the IGZO:N film was not etched by BOE treatment, which indicates
the difference in the chemical compositions of IGZO and IGZO:N nanocomposites. This indicates
the reliable multi-level BRS operations and stable distribution of multi-level resistance according to
the V stop value. So far, it has featured creations such as the DRAM, DVD, CD, and Li-ion
rechargeable battery. Figure 8 d represents the relationship between the average resistance values of
HRS and the magnitude of the V stop value. Multiple requests from the same IP address are counted
as one view. Figure 4 b shows the cumulative resistance distribution under 10 2 sequential DC cycles
of the IGZO and IGZO:N memristor devices. The E g values of IGZO and IGZO:N nanocomposites
were 3.82 and 3.68 eV, respectively. The average optical transmittance and E g of IGZO:N
nanocomposites decreased by the microwave-assisted nitridation process. The BRS operations
occurred repetitively following the DC voltage sweep direction from (1) to (4). Feature papers are
submitted upon individual invitation or recommendation by the scientific editors and must receive.
The insets indicate the calculated BRS operation power for the set process ( P set ) and reset process
( P reset ). As a result, microwave-assisted nitridation technology is an effective synthesis technology
for oxide-based RS layers, and it can improve the memristive switching characteristics for potential
synaptic electronics. The reliable multi-level properties and nonvolatility of IGZO:N nanocomposites
suggest the possibility of gradual synaptic weight modulation through electrical stimulations. Insets
indicate the calculated operation power for the set and reset processes. Journal of Manufacturing and
Materials Processing (JMMP). Because of this, the degree of overlap of the orbitals, which govern
how easily electrons can move, is not sensitive to bond angle variation which is an intrinsic nature of
amorphous materials. International Journal of Environmental Research and Public Health (IJERPH).
This article is an open access article distributed under the terms and conditions of the Creative
Commons Attribution (CC BY) license ( ). In Figure 9 b, the conductance of IGZO memristor
devices was unstably modulated as the pulse number increased. Find support for a specific problem
in the support section of our website. In this material series, the bottom of the conduction band,
which works as the path for electron, is made up mainly of spherically symmetrical metal s -orbitals
with a large spatial spread. Figure 2 b represents the optical transmittance spectra of the IGZO and
IGZO:N films that were formed on the glass substrate (7059 glass; Corning Inc., New York, NY,
USA). Conflicts of Interest The authors have no conflict of interest. Journal of Low Power
Electronics and Applications (JLPEA). However, while amorphous materials were the optimal choice
for forming thin, homogeneous film, high carrier concentration and other issues due to structural
disorder arose, for the most part preventing electric current modulation by electric fields. XPS
binding energy values and atomic concentrations for each metal species in IGZO and IGZO:N
nanocomposites. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by
Microwave-Assisted Nitridation. V 2, red line) in region (2), and the trap-controlled space-charge-
limited conduction (SCLC) (a steep increase in I, green line) in region (3). Products with displays
incorporating these TFTs have been available to the general consumers since 2012. Note that from the
first issue of 2016, this journal uses article numbers instead of page numbers.
Journal of Theoretical and Applied Electronic Commerce Research (JTAER). Journal of
Manufacturing and Materials Processing (JMMP). When nitrogen was incorporated into the IGZO
by an annealing process under a nitrogen ambient, the nitrogen atoms partially occupied the oxygen
vacancies and bonded with the inactive interstitial oxygen. Then, for the microwave-assisted
IGZO:N nanocomposites synthesis, the MWA process was conducted at a frequency of 2.45 GHz
and a power of 1800 W for 2 min under a nitrogen-ambient. The FOM value was also calculated
using the Equations (4) and (5) with an Ag film thickness of 13 nm and as a function of thickness of
?-IGZO films, and the calculated results are shown in Figure 10. High-Performance Resistive
Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation. Thus, the
IGZO:N memristor devices represent a highly improved operation stability with small standard
deviations during repeated DC BRS endurance evaluation, as compared to IGZO memristors. Three
years ago, it was also used to drive large OLED televisions, which was considered a major
breakthrough. Amorphous indium gallium zinc oxide (?-IGZO) is a base N-type semiconductor and
satisfies the application of various requirements. All articles published by MDPI are made
immediately available worldwide under an open access license. No special. Tropical Medicine and
Infectious Disease (TropicalMed). Paper should be a substantial original Article that involves several
techniques or approaches, provides an outlook for. In IGZO:N memristors, each resistance value was
stably repeated and the average values with standard deviations (SD) of the HRS and LRS were
8.30 ? 10 2 ? (SD: 3.40 ? 10 1 ?) and 8.95 ? 10 1 ? (SD: 2.01 ? 10 0 ?), respectively. However, since
the thin film was polycrystalline, there were problems with its characteristics and stability, and no
practical applications were achieved. In this study, by inserting a very thin layer of Ag between two
layers of amorphous IGZO, we could fabricate a highly flexible, low resistance, and highly
transparent IGZO-Ag-IGZO triple-layer electrode on the glass and polyethylene terephthalate (PET)
substrates. 2. Experimental Procedures The amorphous In-Ga-Zn-O (?-IGZO) film and the silver
(Ag) thin metal film were deposited at room temperature by radio frequency (RF) magnetron
sputtering method on Corning Eagle XG glass and PET substrates. It was found that IGZO:N
memristors not only had a superior BRS endurance during the 10 3 DC cycling tests and a stable
resistance distribution compared to IGZO memristors, but they also exhibited reliable multi-level
BRS characteristics through the modulation of the V stop value. Utilizing this improved pixel
performance, IGZO reduces power consumption to one-fifth or even one-tenth that of conventional
screens, which contributes to longer product battery life. In IGZO memristor devices, the probability
of resistance was widely distributed, and it was difficult to confirm a clear multi-level according to
the V stop step. Editors select a small number of articles recently published in the journal that they
believe will be particularly. Furthermore, the multi-resistance values were linearly controlled
depending on the magnitude of the V stop value, and they exhibited stable nonvolatile retention
characteristics even under the high-temperature condition. As the Figure 10 shows, as the thickness
of ?-IGZO films increased, the FOM value first increased, reaching a maximum at 41 nm, and then
decreased as the ?-IGZO thickness further increased. Multiple requests from the same IP address are
counted as one view. As a result, the IGZO:N memristor devices had a more stable resistance
distribution and a larger resistance difference in the LRS and HRS compared to the IGZO memristor
devices. In IGZO memristors, each resistance value changed irregularly and the average values with
standard deviations (SDs) of the HRS and LRS were 4.02 ? 10 2 ? (SD: 7.52 ? 10 2 ?) and 6.70 ? 10
1 ? (SD: 1.04 ? 10 1 ?), respectively. Amorphous semiconductors, therefore, were easy to produce,
but were seen to have much inferior electronic properties. Insets indicate the calculated operation
power for the set and reset processes. On ( a ) glass substrates; and ( b ) PET substrates. In this
material series, the bottom of the conduction band, which works as the path for electron, is made up
mainly of spherically symmetrical metal s -orbitals with a large spatial spread. The optimum
thickness of the Ag metal thin film could be evaluated according to the optical transmittance,
electrical conductivity, and figure of merit of the electrode. For the bottom electrode (BE) of the
MIM structure memristor devices, 10 nm-thick Ti and 100 nm-thick Pt thin films were sequentially
deposited on the substrate through an electron-beam (E-beam) evaporator system.
Journal of Otorhinolaryngology, Hearing and Balance Medicine (JOHBM). Then, for the microwave-
assisted IGZO:N nanocomposites synthesis, the MWA process was conducted at a frequency of 2.45
GHz and a power of 1800 W for 2 min under a nitrogen-ambient. The particle sizes of nano-
crystallization grains increased with the increase of thickness of Ag film. Journal of Experimental
and Theoretical Analyses (JETA). Find support for a specific problem in the support section of our
website. All articles published by MDPI are made immediately available worldwide under an open
access license. No special. When nitrogen was incorporated into the IGZO by an annealing process
under a nitrogen ambient, the nitrogen atoms partially occupied the oxygen vacancies and bonded
with the inactive interstitial oxygen. However, electron mobility was still lower by two to three
orders of magnitude compared to that of crystalline silicon -- no better than 0.5 to 1 cm 2 V -1 s -1.
Products with displays incorporating these TFTs have been available to the general consumers since
2012. As the applied bias increased above the transition voltage ( V tr ) in region (2), the density of
injected carriers increased, compared to the thermally generated free charge carriers. As Figure 8 a
shows, as glass was used as substrate, the maximum transmittance is measured to be 85.6%, 88.1%,
83.9%, and 82.8% as the thickness of ?-IGZO films were 27, 41, 55, and 69 nm, respectively. In
2003, Hosono and his collaborators reported in Science that crystalline epitaxial thin film could
produce mobility of around 80 cm 2 V -1 s -1. Feature papers are submitted upon individual
invitation or recommendation by the scientific editors and must receive. In the following year, they
published in Nature that amorphous thin film could also produce mobility of around 10 cm2 V-1 s-1.
Table 4 lists the average resistance values and standard deviations of multi-level states according to
the V stop step. It was found that IGZO:N memristors not only had a superior BRS endurance
during the 10 3 DC cycling tests and a stable resistance distribution compared to IGZO memristors,
but they also exhibited reliable multi-level BRS characteristics through the modulation of the V stop
value. Feature papers represent the most advanced research with significant potential for high impact
in the field. A Feature. The amorphous natures of the deposited IGZO and Ag films can result from
the low temperature of the sputtering process. International Journal of Turbomachinery, Propulsion
and Power (IJTPP). The optical energy bandgap ( E g ) can be extracted through the following
relationship of the absorption coefficient. In the Figure 4, all of the samples showed a sharp optical
band edge in the UV region, and the optical band edge was also shifted to a shorter light
wavelength as the thickness of Ag film increased. Journal of Manufacturing and Materials
Processing (JMMP). To investigate the gradual conductance modulation according to the electrical
pulse stimulations, which is essential for memristive switching, the synaptic weight increase
(potentiation) and decrease (depression) properties were evaluated. High-Performance Resistive
Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation. V, blue
line) in region (1), trap-filled-limited conduction ( I. As a result, microwave-assisted nitridation
technology is an effective synthesis technology for oxide-based RS layers, and it can improve the
memristive switching characteristics for potential synaptic electronics. In order to secure stable
memristive switching characteristics, IGZO:N nanocomposites were synthesized through the
microwave-assisted nitridation of solution-derived IGZO thin films, and the resulting improvement in
synaptic characteristics was systematically evaluated. The microwave-assisted nitridation of solution-
derived IGZO films was clearly demonstrated by chemical etching, optical absorption coefficient
analysis, and X-ray photoelectron spectroscopy. Further, the solution-derived IGZO:N
nanocomposites RS layer, which is the most significant part for memristor operations, was formed as
follows: The synthesized 1:3:1 molar-ratio IGZO solution was spin-coated on the BE layer at 500
rpm for 10 s, followed by 2000 rpm for 30 s. Ag was used because of its lower absorption and
resistivity.