Scribd
Upload
25 views1 page

APPLICATION: Audio Power Amplifier Applications.: - PNP Silicon

This document provides specifications for an audio power amplifier transistor. It lists maximum ratings including collector-base voltage, collector-emitter voltage, and power dissipation. Electrical characteristics are given like common emitter current gain, collector cutoff current, and gain bandwidth product. The transistor is classified based on its current gain range and is marked accordingly.

Uploaded by

Jasons Solano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
25 views1 page

APPLICATION: Audio Power Amplifier Applications.: - PNP Silicon

This document provides specifications for an audio power amplifier transistor. It lists maximum ratings including collector-base voltage, collector-emitter voltage, and power dissipation. Electrical characteristics are given like common emitter current gain, collector cutoff current, and gain bandwidth product. The transistor is classified based on its current gain range and is marked accordingly.

Uploaded by

Jasons Solano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

风光欣技术资料 A1357

—PNP silicon —
■■APPLICATION: Audio Power Amplifier Applications.

■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER SYMBOL RATING UNIT

Collector-base voltage VCBO -35 V


Collector-emitter voltage VCEO -20 V
Emitter-base voltage VEBO -8 V 1 TO-126
Collector current IC -5 A 1. Emitter 2.Collector 3.Base

Peak Collector current ICM -8 A


Emitter current IB -1 A
Power Dissipation(Ta=25℃) P 1.5 W
Power Dissipation(Tc=25℃) PC 10 W
Junction Temperature TJ 150 ℃
Storage Temperature Range Tstg -55~150 ℃

■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

hFE1 100 320 VCE= -2V，IC= -500mA


Common Emitter DC Current Gain
hFE2 70 VCE= -2V，IC= -4A
Collector Cut-off Current ICBO -100 μA VCB= -35V，IE=0
Emitter Cut-off Current IEBO -100 μA VEB= -8V，IC=0
Collector-Base Breakdown Voltage BVCBO -35 V IC= -1mA，IE=0
Collector-Emitter Breakdown Voltage BVCEO -20 V IC= -10mA，IB=0
Emitter-Base Breakdown Voltage BVEBO -8 V IE= -1mA，IC=0
Base-Collector Voltage VBE -1.5 V VCE= -2V，IC= -4A
Collector-Emitter Saturation Voltage VCE(sat) -1 V IC= -4A，IB= -100mA
Gain bandwidth product fT 100 170 MHz IC= -500mA，VCE= -2V
Output Capacitance Cob 62 pF VCB= -10V, IE=0, f = 1MHz

■■hFE Classification And Marking


Classification O Y
hFE 100~200 160~320

You might also like