Aug 2002

AO3407
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3407 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON) with low gate charge. This ID = -4.1 A
device is suitable for use as a load switch or in PWM RDS(ON) < 52mΩ (VGS = -10V)
applications. RDS(ON) < 87mΩ (VGS = -4.5V)

D
TO-236
(SOT-23)
Top View

G
D G
S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -4.1
Current A TA=70°C ID -3.5 A
B
Pulsed Drain Current IDM -20
TA=25°C 1.4
PD W
Power Dissipation A TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 65 90 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 85 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 43 60 °C/W

Alpha & Omega Semiconductor, Ltd.

AO3407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -1.8 -3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 A
VGS=-10V, ID=-4.1A 40.5 52
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 57 73
VGS=-4.5V, ID=-3A 64 87 mΩ
gFS Forward Transconductance VDS=-5V, ID=-4A 5.5 8.2 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current -2.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 700 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 120 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge (10V) 14.3 nC
Qg Total Gate Charge (4.5V) 7 nC
VGS=-4.5V, VDS=-15V, ID=-4A
Qgs Gate Source Charge 3.1 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 8.6 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3.6Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 28.2 ns
tf Turn-Off Fall Time 13.5 ns
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 27 ns
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 15 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-10V -5V

-4.5V 8 VDS=-5V
15 -4V

6
-ID (A)

-ID(A)
10
-3.5V
4 125°C

5 VGS=-3V 2
25°C

0 0
0.00 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.6
Normalized On-Resistance VGS=-4.5V

80 1.4 VGS=-10V
VGS=-4.5V
RDS(ON) (mΩ)

60 1.2

VGS=-10V

40 1 ID=-2A

20 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

160 1E+01

140 ID=-2A 1E+00

120 1E-01 125°C

RDS(ON) (mΩ)

100 1E-02
-IS (A)

80 125°C 1E-03
25°C
60 1E-04

40 25°C 1E-05

20 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000

VDS=-15V
8 ID=-4A 800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4 400 Coss
Crss
2 200

0 0
0 4 8 12 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 30
10 100µs 10µs
limited
Power (W)
-ID (Amps)

1ms
20
0.1s 10ms
1
1s 10
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=90°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 SOT-23 Package Data

DIMENSIONS IN MILLIMETERS
SYMBOLS
MIN NOM MAX
A 1.00 −−− 1.25
θ A1 0.00 −−− 0.10
A2 1.00 1.10 1.15
b 0.35 0.40 0.50
C 0.10 0.15 0.25
D 2.80 2.90 3.04
E 2.60 2.80 2.95
E1 1.40 1.60 1.80
e −−− 0.95 BSC −−−
e1 −−− 1.90 BSC −−−
L 0.40 −−− 0.60
θ1 1° 5° 8°

NOTE:
SEATING PLANE
GAUGE PLANE

1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.

THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN

SOT-23 PART NO. CODE

PNDLN PART NO. CODE

AO3407 A7

NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.

Rev. A
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SEMICONDUCTOR, INC.

SOT-23 Carrier Tape

SOT-23 Reel

SOT-23 Tape
Leader / Trailer
& Orientation
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