*****************************************************************

* INFINEON Power Transistors *

* Content: SPICE Model Library *
* Device: CoolMOS (Superjunction MOSFET) *
* Model Types: L0 L1 L3 *
* Technology: P7 600V *
* Date and time: 29.11.2022 16:29:51 *
* Version: 1011 *
*****************************************************************
* *
* The models for Infineon Power MOSFET are evaluated with *
* SIMetrixTM-SPICE simulator. The Infineon Power MOSFET models *
* are tested, verified and provided in SPICE simulation code. *
* *
* Infineon | Terminals | Usage suggestion *
* Level | | *
* ------------------------------------------------------------- *
* L0 | G, D, S | General electrical simulations/ whole *
* | | application circuits. *
* ------------------------------------------------------------- *
* L1 | G, D, S | Transient, switching losses and *
* | | efficiency analyses. Behavior of *
* | | device over full temperature range. *
* ------------------------------------------------------------- *
* L2 | G, D, S, | Same as L1 but with individual device *
* | Tj, Tcase | temperature. This model is not *
* | | supported because it is covered by *
* | | L3-model. *
* ------------------------------------------------------------- *
* L3 | G, D, S, | Self-heating effects, modeling of heat *
* | Tj, Tcase | flow including thermal models of *
* | | application. *
* *
*****************************************************************
* Detailed Informations: *
* *
* The model files are available on the Infineon web page: *
* http://www.infineon.com *
* Please refer also to the Infineon application note AN 2014-02 *
* "Simulation models for Infineon Power MOSFET" *
* *
* This library contains models of the following INFINEON *
* CoolMOS transistors: *
* *
* P7 600V *
* IPW60R037P7 IPZ60R037P7 IPP60R180P7 *
* IPA60R180P7 IPD60R180P7 IPAW60R180P7S *
* IPL60R185P7 IPW60R180P7 IPP60R360P7 *
* IPA60R360P7 IPD60R360P7 IPAW60R360P7S *
* IPL60R365P7 IPP60R600P7 IPD60R600P7 *
* IPP60R060P7 IPA60R060P7 IPW60R060P7 *
* IPP60R080P7 IPA60R080P7 IPW60R080P7 *
* IPP60R099P7 IPA60R099P7 IPW60R099P7 *
* IPP60R120P7 IPA60R120P7 IPW60R120P7 *
* IPP60R280P7 IPA60R280P7 IPD60R280P7 *
* IPAW60R280P7S IPZ60R060P7 IPL60R065P7 *
* IPB60R060P7 IPZ60R080P7 IPL60R085P7 *
* IPB60R080P7 IPZ60R099P7 IPL60R105P7 *
* IPB60R099P7 IPZ60R120P7 IPL60R125P7 *
* IPB60R120P7 IPZ60R180P7 IPB60R180P7 *
* IPL60R285P7 IPB60R280P7 IPB60R360P7 *
* IPA60R600P7 IPAW60R600P7S IPD60R180P7S *
* IPA60R180P7S IPD60R280P7S IPA60R280P7S *
* IPD60R360P7S IPA60R360P7S IPD60R600P7S *
* IPA60R600P7S IPN60R360P7S IPN60R600P7S *
* IPB60R045P7 IPA60R160P7 IPP60R160P7 *
* IPW60R045P7 IPW60R024P7 IPZA60R045P7 *
* IPZA60R024P7 IPAN60R600P7S IPAN60R360P7S *
* IPAN60R280P7S IPZA60R180P7 *
* *
*****************************************************************
**********************************************************************
************************ L1 TECHNOLOGY MODEL *************************
**********************************************************************

.SUBCKT cool_600_p76_var dd g s Tj t1 PARAMS: a=1 dVth=0 dR=0 Inn=1 Unn=1 Rmax=1

+gmin=1 Rs=1 Rdp=1 heat=0
.PARAM fpar42=298
.PARAM fpar1=4.28
.PARAM fpar2=0.005
.PARAM fpar3=-0.0031
.PARAM fpar4=12.45
.PARAM fpar5=0.83
.PARAM fpar6=3.1
.PARAM fpar7=0.3
.PARAM fpar8=6.1045
.PARAM fpar9=0.663075
.PARAM fpar10=5.6
.PARAM fpar11=1.0647
.PARAM fpar12=6.992
.PARAM fpar13=0.295
.PARAM fpar14=-23
.PARAM fpar15=660
.PARAM fpar16=0.88
.PARAM fpar18=0.063
.PARAM fpar19=-28.4
.PARAM fpar20=2e-006
.PARAM fpar21=1.09
.PARAM fpar22=0.394
.PARAM fpar23=1.47e-012
.PARAM fpar24=1.5e-010
.PARAM fpar25=1.0e-010
.PARAM fpar26=5.14e-012
.PARAM fpar27=1.6e-015
.PARAM fpar28=6e-013
.PARAM fpar29=1.15e-011
.PARAM fpar30=4e-013
.PARAM fpar31=25e-014
.PARAM fpar32=90
.PARAM fpar33=1.5e-012
.PARAM fpar34=16e-013
.PARAM fpar35=3.0e-010
.PARAM fpar36=0.93e-007
.PARAM fpar37=4.3e-009
.PARAM fpar38=1.65e-010
.PARAM fpar39=6.5e-011
.PARAM fpar17=0.0
.PARAM fpar40=85.8u
.PARAM fpar41=273
.PARAM dRdi={fpar18/a}
.PARAM Cdio={fpar23*a}
.PARAM Cdg1={fpar24*a+fpar25*SQRT(a)}
.PARAM Cdg2={fpar26*a}
.PARAM CdgV1={fpar27*a}
.PARAM CdgV2={(fpar31*a+fpar28)}
.PARAM Cds0={fpar33*a+fpar34*SQRT(a)}
.PARAM Cds1={a*fpar35+14e-11*(4*SQRT(a))}
.PARAM Cgs0={fpar38*a+fpar39*(SQRT(a))}
.PARAM Vmin=3.4 Vmax=5.4
.PARAM Vth={fpar1+(Vmax-fpar1)*limit(dVth,0,1)-(Vmin-fpar1)*limit(dVth,-1,0)}
.PARAM r0={fpar8*((fpar41/fpar42)**fpar9)*a}
.PARAM r1={(Unn-Inn*Rs-fpar1)*r0}
.PARAM r2={(fpar17*SQRT(0.4)-fpar11)*Inn*r0}
.PARAM Rlim={(r1+2*r2*Rmax-SQRT(r1**2+4*r2))/(2*r2)}
.PARAM dRd={fpar5/a+if(dVth==0,limit(dR,0,1)*max(Rlim-fpar5/a-Rs-Rdp,0),0)}
.PARAM CAP_eedg=-0.556
.PARAM x0={(fpar29-fpar26)/fpar30} x1={fpar29/fpar30} dx={x1-x0}
.FUNC QCdg1(x) {Cdg2*min(x,x1)+CdgV2*max(x-x1,0)+CdgV1/2*max(0, x-fpar32)**2+
(Cdg2-CdgV2)*((limit(x,x0,x1)-x0)**3/(dx*dx)*((limit(x,x0,x1)-x0)/(2*dx)-1))}
.PARAM Eds1={-6000} Eds2={-320} Eds3={-200} eeds1={-0.1667} eeds2={-6.25m}
eeds3={-0.05}
.PARAM a0={(fpar36-fpar35)/fpar37} a1={fpar36/fpar37} da={a1-a0}
.FUNC QCds1(x)
{Cds1*min(x,a1)+Cds1*((limit(x,a0,a1)-a0)**3/(da*da)*((limit(x,a0,a1)-a0)/(2*da)-
1))}
E_Edg1 d1 ox VALUE {if(V(d1,g)>0,V(d1,g)-(exp(CAP_eedg*max(V(d1,g),0))-
1)/CAP_eedg,0)}
C_Cdg1 ox g {Cdg1}
E_Edg2 d1 ox2 VALUE {V(d1,g)-QCdg1(V(d1,g))/Cdg2}
C_Cdg2 ox2 g {Cdg2}
C_Cds0 d1 s {Cds0}
E_Eds1 d1 edep1 VALUE {if(V(d1,s)>0,V(d1,s)-Eds1*(exp(eeds1*max(V(d1,s),0))-
1)-Eds2*(exp(eeds2*max(V(d1,s),0))-1)-Eds3*(exp(eeds3*max(V(d1,s),0))-1),0)}
C_Cds1 edep1 s {Cds0}
E_Eds2 d1 edep2 VALUE {V(d1,s)-QCds1(V(d1,s))/Cds1}
C_Cds2 edep2 s {Cds1}
C_Cgs g s {Cgs0}
.FUNC I0(Uee,p,pp,z1,cc) {if(Uee>pp,(Uee-cc*z1)*z1,p*(pp-p)/cc*exp((Uee-pp)/p))}
.FUNC Ig(Uds,T,p,Uee,cc)
{fpar8*(fpar41/T)**fpar9*I0(Uee,p,min(2*p,p+cc*Uds),min(Uds,Uee/(2*cc)),cc)}
.FUNC J(d,g,T,da,s)
+ {a*(s*(Ig(da,T,fpar10*fpar40*T,g-Vth+fpar2*(T-fpar42),fpar11)+1*exp(min(fpar14+
(d-fpar15-fpar16*(T-fpar42))/fpar13,25))))}
G_chan d s VALUE={J(V(d,s),V(g,s),fpar41+limit(V(Tj),-200,499),
(SQRT(1+4*fpar12*abs(V(d,s)))-1)/2/fpar12,sgn(V(d,s)))}
V_Ichannel d1 d 0
.FUNC Rd0(T) {(fpar7*dRd+(1-fpar7)*dRd*(T/fpar42)**fpar6)}
.FUNC CF(T,Iepi) {(fpar4**2)/max(1,fpar4**2-(Rd0(T)*Iepi)**limit(2+fpar3*(T-
fpar42),1.2,3))}
V_Iepi dd d2 0
G_G_Rd d2 d1 VALUE {V(d2,d1)/(Rd0(fpar41+LIMIT(V(t1),-
200,999))*CF(fpar41+LIMIT(V(t1),-200,999),abs(I(V_Iepi))))}
G_Dio s dio VALUE={(a*exp(fpar19-3.3))*exp(((((V(Tj)+273)/273)-1)*1.11)/(((V(Tj)
+273)*fpar21*fpar40)))*((V(Tj)+273)/273)**(3/fpar21)*(exp(V(s,dio)/((V(Tj)
+273)*fpar21*fpar40)-1))}
G_Rdio dio2 dd
VALUE={V(dio2,dd)/(dRdi*((limit(V(Tj),-200,999)+fpar41)/fpar42)**fpar22)}
V_sense2 dio2 dio 0
R_R_ERd_g d2 d1 10k
R1 g s 1G
Rd01 d s 500Meg
Rd02 d2 s 500Meg
Rd03 dio s 500Meg
G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) }
G_G_Ptot_Epi 0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)
+LIMIT(V(dd,s)*I(V_sense2),0,100k))}
.ENDS

**********************************************************************

.SUBCKT IPW60R037P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 928.5u
Rg g1 g2 0.85
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 150.008 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.028 TC=12m
.MODEL MVDR NMOS (KP=245 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 48p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 1.75m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 4.81n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 5.81n
.ENDS IPW60R037P7_L0

********************************************************************************

.SUBCKT IPW60R037P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=4.38E-04 Rg=0.85 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-
09
.PARAM Lg=8.38E-09 act=29.5 Inn={1.0*29.5} Unn=10.0 Rmax=37m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R037P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=4.38E-04 Rg=0.85 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-
09
.PARAM Lg=8.38E-09 act=29.5 Inn={1.0*29.5} Unn=10.0 Rmax=37m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 283.789u
C_CZth2 0 1 1.711m
C_CZth3 0 2 2.416m
C_CZth4 0 3 13.734m
C_CZth5 0 4 75.082m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {5.75m+lzth*1.49m}
R_Rth2 1 2 {7.93m+lzth*2.06m}
R_Rth3 2 3 {44.5m+lzth*11.54m}
R_Rth4 3 4 {75.85m+lzth*115.35m}
R_Rth5 4 Tcase {111.32m+lzth*113.21m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPZ60R037P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 928.5u
Rg g1 g2 0.85
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 150.008 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.028 TC=12m
.MODEL MVDR NMOS (KP=245 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 48p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 1.75m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 4.81n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 5.81n
.ENDS IPZ60R037P7_L0

********************************************************************************

.SUBCKT IPZ60R037P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.83E-04 Rg=0.85 Rdp=1.19E-04 Ls=2.03E-09 Ld=2.15E-
09
.PARAM Lg=8.40E-09 act=29.5 Inn={1.0*29.5} Unn=10.0 Rmax=37m
.PARAM Lss=5.11E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R037P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=3.83E-04 Rg=0.85 Rdp=1.19E-04 Ls=2.03E-09 Ld=2.15E-
09
.PARAM Lg=8.40E-09 act=29.5 Inn={1.0*29.5} Unn=10.0 Rmax=37m
.PARAM Lss=5.11E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 283.789u
C_CZth2 0 1 1.711m
C_CZth3 0 2 2.416m
C_CZth4 0 3 13.734m
C_CZth5 0 4 75.082m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {5.75m+lzth*1.49m}
R_Rth2 1 2 {7.93m+lzth*2.06m}
R_Rth3 2 3 {44.5m+lzth*11.54m}
R_Rth4 3 4 {75.85m+lzth*115.35m}
R_Rth5 4 Tcase {111.32m+lzth*113.21m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R180P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.5m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPP60R180P7_L0

********************************************************************************
.SUBCKT IPP60R180P7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=9.29E-04 Rg=11.0 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R180P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=11.0 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 5.73m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*391.95m}
R_Rth5 4 Tcase {286.57m+lzth*380.64m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R180P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPA60R180P7_L0

********************************************************************************

.SUBCKT IPA60R180P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.06E-04 Rg=11.0 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R180P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=11.0 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 6.876m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*205.55m}
R_Rth5 4 5 {286.57m+lzth*194.25m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.38}
.ENDS

********************************************************************************

.SUBCKT IPD60R180P7_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 1m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPD60R180P7_L0

********************************************************************************

.SUBCKT IPD60R180P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=6.45E-04 Rg=11.0 Rdp=2.39E-06 Ls=2.71E-09 Ld=8.18E-
11
.PARAM Lg=4.10E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R180P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=6.45E-04 Rg=11.0 Rdp=2.39E-06 Ls=2.71E-09 Ld=8.18E-
11
.PARAM Lg=4.10E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 3.689m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*426.03m}
R_Rth5 4 Tcase {218.4m+lzth*414.73m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPAW60R180P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPAW60R180P7S_L0

********************************************************************************

.SUBCKT IPAW60R180P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.14E-03 Rg=11.0 Rdp=2.73E-04 Ls=4.81E-09 Ld=3.31E-
09
.PARAM Lg=9.24E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************
.SUBCKT IPAW60R180P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0
Zthtype=0
.PARAM Rs=1.14E-03 Rg=11.0 Rdp=2.73E-04 Ls=4.81E-09 Ld=3.31E-
09
.PARAM Lg=9.24E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 6.876m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*205.55m}
R_Rth5 4 5 {286.57m+lzth*194.25m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.38}
.ENDS

********************************************************************************

.SUBCKT IPL60R185P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 6.5m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPL60R185P7_L0

********************************************************************************

.SUBCKT IPL60R185P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.34E-03 Rg=11.0 Rdp=2.04E-06 Ls=1.04E-09 Ld=4.33E-
11
.PARAM Lg=3.74E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=185m
.PARAM Lss=2.62E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R185P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=2.34E-03 Rg=11.0 Rdp=2.04E-06 Ls=1.04E-09 Ld=4.33E-
11
.PARAM Lg=3.74E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=185m
.PARAM Lss=2.62E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 3.689m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*322.53m}
R_Rth5 4 Tcase {218.4m+lzth*311.23m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPW60R180P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 2m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPW60R180P7_L0

********************************************************************************

.SUBCKT IPW60R180P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.16E-03 Rg=11.0 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
 +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R180P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=1.16E-03 Rg=11.0 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 14.227m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*320.31m}
R_Rth5 4 Tcase {429.85m+lzth*309m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R360P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 4.8m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.304 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPP60R360P7_L0

********************************************************************************

.SUBCKT IPP60R360P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.28E-03 Rg=6.20 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R360P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.28E-03 Rg=6.20 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 2.051m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*670.14m}
R_Rth5 4 Tcase {451.88m+lzth*646.73m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R360P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.304 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPA60R360P7_L0

********************************************************************************

.SUBCKT IPA60R360P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=6.20 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R360P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.37E-03 Rg=6.20 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 2.461m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*296.11m}
R_Rth5 4 5 {451.88m+lzth*272.71m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.22}
.ENDS

********************************************************************************

.SUBCKT IPD60R360P7_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.303 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPD60R360P7_L0

********************************************************************************

.SUBCKT IPD60R360P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=6.20 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R360P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=2.31E-03 Rg=6.20 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 1.782m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*711.28m}
R_Rth5 4 Tcase {369.59m+lzth*687.88m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPAW60R360P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.304 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPAW60R360P7S_L0

********************************************************************************

.SUBCKT IPAW60R360P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.88E-03 Rg=6.20 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPAW60R360P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.88E-03 Rg=6.20 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 2.461m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*296.11m}
R_Rth5 4 5 {451.88m+lzth*272.71m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.22}
.ENDS

********************************************************************************

.SUBCKT IPL60R365P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 9m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.303 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPL60R365P7_L0

********************************************************************************

.SUBCKT IPL60R365P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.41E-03 Rg=6.20 Rdp=2.03E-06 Ls=1.13E-09 Ld=4.38E-
11
.PARAM Lg=3.74E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=365m
.PARAM Lss=2.61E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R365P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=3.41E-03 Rg=6.20 Rdp=2.03E-06 Ls=1.13E-09 Ld=4.38E-
11
.PARAM Lg=3.74E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=365m
.PARAM Lss=2.61E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 1.782m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*557.78m}
R_Rth5 4 Tcase {369.59m+lzth*534.38m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPP60R600P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 4.9m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPP60R600P7_L0

********************************************************************************

.SUBCKT IPP60R600P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.28E-03 Rg=6.30 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R600P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.28E-03 Rg=6.30 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 2m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*888.62m}
R_Rth5 4 Tcase {568.56m+lzth*851.01m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPD60R600P7_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.2m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPD60R600P7_L0

********************************************************************************

.SUBCKT IPD60R600P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=6.30 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R600P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=2.31E-03 Rg=6.30 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 1.109m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*934.8m}
R_Rth5 4 Tcase {476.22m+lzth*897.19m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPP60R060P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 966.1u
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPP60R060P7_L0

********************************************************************************

.SUBCKT IPP60R060P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.51E-04 Rg=2.80 Rdp=3.62E-04 Ls=2.77E-09 Ld=2.43E-
09
.PARAM Lg=6.41E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R060P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=5.51E-04 Rg=2.80 Rdp=3.62E-04 Ls=2.77E-09 Ld=2.43E-
09
.PARAM Lg=6.41E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 18.852m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*188.25m}
R_Rth5 4 Tcase {126.24m+lzth*184.27m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R060P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1m
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPA60R060P7_L0

********************************************************************************

.SUBCKT IPA60R060P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.17E-04 Rg=2.80 Rdp=2.35E-04 Ls=2.30E-09 Ld=1.90E-
09
.PARAM Lg=6.17E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R060P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=5.17E-04 Rg=2.80 Rdp=2.35E-04 Ls=2.30E-09 Ld=1.90E-
09
.PARAM Lg=6.17E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 22.623m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*99.6m}
R_Rth5 4 5 {126.24m+lzth*95.62m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.55}
.ENDS

********************************************************************************

.SUBCKT IPW60R060P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 1.2m
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPW60R060P7_L0

********************************************************************************

.SUBCKT IPW60R060P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=6.17E-04 Rg=2.80 Rdp=7.67E-05 Ls=3.52E-09 Ld=2.25E-
09
.PARAM Lg=8.95E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R060P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=6.17E-04 Rg=2.80 Rdp=7.67E-05 Ls=3.52E-09 Ld=2.25E-
09
.PARAM Lg=8.95E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 40.468m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*154.7m}
R_Rth5 4 Tcase {189.36m+lzth*150.73m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R080P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.5m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.07 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPP60R080P7_L0

********************************************************************************

.SUBCKT IPP60R080P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.29E-04 Rg=4.80 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R080P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=4.80 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 13.634m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*232.04m}
R_Rth5 4 Tcase {161.76m+lzth*226.68m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS
********************************************************************************

.SUBCKT IPA60R080P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.07 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPA60R080P7_L0

********************************************************************************

.SUBCKT IPA60R080P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.06E-04 Rg=4.80 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R080P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=4.80 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 16.361m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*118.84m}
R_Rth5 4 5 {161.76m+lzth*113.49m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.44}
.ENDS

********************************************************************************

.SUBCKT IPW60R080P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 2.1m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.07 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPW60R080P7_L0

********************************************************************************

.SUBCKT IPW60R080P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.16E-03 Rg=4.80 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R080P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=1.16E-03 Rg=4.80 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 30.033m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*191.6m}
R_Rth5 4 Tcase {242.64m+lzth*186.24m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R099P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.5m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPP60R099P7_L0

********************************************************************************

.SUBCKT IPP60R099P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.29E-04 Rg=5.90 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R099P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=5.90 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 11.979m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*255.55m}
R_Rth5 4 Tcase {177.81m+lzth*249.53m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R099P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPA60R099P7_L0

********************************************************************************

.SUBCKT IPA60R099P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.06E-04 Rg=5.90 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R099P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=5.90 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 14.375m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*127.23m}
R_Rth5 4 5 {177.81m+lzth*121.22m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.4}
.ENDS

********************************************************************************

.SUBCKT IPW60R099P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 2.1m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPW60R099P7_L0

********************************************************************************

.SUBCKT IPW60R099P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.16E-03 Rg=5.90 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R099P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=1.16E-03 Rg=5.90 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 26.724m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*211.1m}
R_Rth5 4 Tcase {266.71m+lzth*205.08m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R120P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.5m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPP60R120P7_L0

********************************************************************************

.SUBCKT IPP60R120P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.29E-04 Rg=7.10 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R120P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=7.10 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 9.039m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*307.3m}
R_Rth5 4 Tcase {216.2m+lzth*299.58m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R120P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPA60R120P7_L0

********************************************************************************

.SUBCKT IPA60R120P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.06E-04 Rg=7.10 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
 +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R120P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=7.10 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 10.847m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*154.38m}
R_Rth5 4 5 {216.2m+lzth*146.67m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.39}
.ENDS

********************************************************************************

.SUBCKT IPW60R120P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 2.1m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPW60R120P7_L0

********************************************************************************

.SUBCKT IPW60R120P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.16E-03 Rg=7.10 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R120P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=1.16E-03 Rg=7.10 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-
09
.PARAM Lg=8.96E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 20.845m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*253.25m}
R_Rth5 4 Tcase {324.3m+lzth*245.53m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPP60R280P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.215 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPP60R280P7_L0

********************************************************************************
.SUBCKT IPP60R280P7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=3.28E-03 Rg=7.00 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPP60R280P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.28E-03 Rg=7.00 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 3.477m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 500m
C_CZth8 0 7 450m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*527.94m}
R_Rth5 4 Tcase {369.07m+lzth*511.4m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPA60R280P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.215 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPA60R280P7_L0

********************************************************************************

.SUBCKT IPA60R280P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=7.00 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R280P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.37E-03 Rg=7.00 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 4.172m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*261.41m}
R_Rth5 4 5 {369.07m+lzth*244.87m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.35}
.ENDS

********************************************************************************

.SUBCKT IPD60R280P7_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.3m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.214 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPD60R280P7_L0

********************************************************************************

.SUBCKT IPD60R280P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=7.00 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R280P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=2.31E-03 Rg=7.00 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 2.521m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*565.53m}
R_Rth5 4 Tcase {293.88m+lzth*548.99m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPAW60R280P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.215 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPAW60R280P7S_L0

********************************************************************************

.SUBCKT IPAW60R280P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.88E-03 Rg=7.00 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************
.SUBCKT IPAW60R280P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0
Zthtype=0
.PARAM Rs=3.88E-03 Rg=7.00 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 4.172m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*261.41m}
R_Rth5 4 5 {369.07m+lzth*244.87m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.35}
.ENDS

********************************************************************************

.SUBCKT IPZ60R060P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 1m
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPZ60R060P7_L0

********************************************************************************

.SUBCKT IPZ60R060P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.43E-04 Rg=2.80 Rdp=1.19E-04 Ls=2.41E-09 Ld=2.25E-
09
.PARAM Lg=8.44E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM Lss=5.14E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R060P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=5.43E-04 Rg=2.80 Rdp=1.19E-04 Ls=2.41E-09 Ld=2.25E-
09
.PARAM Lg=8.44E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM Lss=5.14E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 40.468m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*156.69m}
R_Rth5 4 Tcase {189.36m+lzth*152.71m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPL60R065P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 4.1m
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPL60R065P7_L0

********************************************************************************

.SUBCKT IPL60R065P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.77E-03 Rg=2.80 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=65m
.PARAM Lss=2.65E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R065P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.77E-03 Rg=2.80 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=65m
.PARAM Lss=2.65E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 10.494m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*144.88m}
R_Rth5 4 Tcase {71.09m+lzth*140.91m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************
.SUBCKT IPB60R060P7_L0 drain gate source
Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 921.3u
Rg g1 g2 2.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 80.852 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.052 TC=12m
.MODEL MVDR NMOS (KP=132.05 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 25.9p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=4.15n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=11130p N=1.5 RS=8u EG=1.12 TT=250n)
Rdiode d1 21 3.24m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.59n
.MODEL DGD D(M=0.9 CJO=2.59n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 3.13n
.ENDS IPB60R060P7_L0

********************************************************************************

.SUBCKT IPB60R060P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.88E-04 Rg=2.80 Rdp=3.76E-04 Ls=2.80E-09 Ld=2.38E-
09
.PARAM Lg=6.35E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R060P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=5.88E-04 Rg=2.80 Rdp=3.76E-04 Ls=2.80E-09 Ld=2.38E-
09
.PARAM Lg=6.35E-09 act=15.9 Inn={1.0*15.9} Unn=10.0 Rmax=60m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 152.957u
C_CZth2 0 1 922.369u
C_CZth3 0 2 1.302m
C_CZth4 0 3 7.402m
C_CZth5 0 4 18.852m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {10.67m+lzth*2.77m}
R_Rth2 1 2 {14.71m+lzth*3.81m}
R_Rth3 2 3 {82.57m+lzth*21.4m}
R_Rth4 3 4 {129.28m+lzth*188.25m}
R_Rth5 4 Tcase {126.24m+lzth*184.27m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPZ60R080P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 1.7m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.069 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPZ60R080P7_L0

********************************************************************************

.SUBCKT IPZ60R080P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.02E-03 Rg=4.80 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM Lss=5.13E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R080P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.02E-03 Rg=4.80 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM Lss=5.13E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 30.033m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*191.6m}
R_Rth5 4 Tcase {242.64m+lzth*186.24m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPL60R085P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 4.4m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.069 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPL60R085P7_L0

********************************************************************************

.SUBCKT IPL60R085P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.77E-03 Rg=4.80 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=85m
.PARAM Lss=2.65E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R085P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.77E-03 Rg=4.80 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=85m
.PARAM Lss=2.65E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 7.788m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*183.7m}
R_Rth5 4 Tcase {103.89m+lzth*178.35m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPB60R080P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 1.4m
Rg g1 g2 4.8
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 60.003 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.069 TC=12m
.MODEL MVDR NMOS (KP=98 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 19.2p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=3.08n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=8260p N=1.5 RS=11u EG=1.12 TT=250n)
Rdiode d1 21 4.37m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.92n
.MODEL DGD D(M=0.9 CJO=1.92n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.32n
.ENDS IPB60R080P7_L0

********************************************************************************

.SUBCKT IPB60R080P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.95E-04 Rg=4.80 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R080P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.95E-04 Rg=4.80 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=11.8 Inn={1.0*11.8} Unn=10.0 Rmax=80m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 113.515u
C_CZth2 0 1 684.525u
C_CZth3 0 2 966.388u
C_CZth4 0 3 5.494m
C_CZth5 0 4 13.634m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {14.37m+lzth*3.73m}
R_Rth2 1 2 {19.82m+lzth*5.14m}
R_Rth3 2 3 {111.25m+lzth*28.84m}
R_Rth4 3 4 {165.86m+lzth*232.04m}
R_Rth5 4 Tcase {161.76m+lzth*226.68m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPZ60R099P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 1.7m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPZ60R099P7_L0

********************************************************************************
.SUBCKT IPZ60R099P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0
.PARAM Rs=1.02E-03 Rg=5.90 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM Lss=5.13E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R099P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.02E-03 Rg=5.90 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM Lss=5.13E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 26.724m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*211.1m}
R_Rth5 4 Tcase {266.71m+lzth*205.08m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPL60R105P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 4.5m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPL60R105P7_L0

********************************************************************************

.SUBCKT IPL60R105P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.77E-03 Rg=5.90 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=105m
.PARAM Lss=2.65E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R105P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.77E-03 Rg=5.90 Rdp=2.01E-06 Ls=9.13E-10 Ld=4.31E-
11
.PARAM Lg=3.76E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=105m
.PARAM Lss=2.65E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 6.93m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*204.59m}
R_Rth5 4 Tcase {118.66m+lzth*198.57m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPB60R099P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 1.4m
Rg g1 g2 5.9
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 53.393 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.078 TC=12m
.MODEL MVDR NMOS (KP=87.2 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 17.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.74n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=7350p N=1.5 RS=13u EG=1.12 TT=250n)
Rdiode d1 21 4.91m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.71n
.MODEL DGD D(M=0.9 CJO=1.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 2.07n
.ENDS IPB60R099P7_L0

********************************************************************************

.SUBCKT IPB60R099P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.95E-04 Rg=5.90 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R099P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.95E-04 Rg=5.90 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=10.5 Inn={1.0*10.5} Unn=10.0 Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 101.009u
C_CZth2 0 1 609.111u
C_CZth3 0 2 859.922u
C_CZth4 0 3 4.888m
C_CZth5 0 4 11.979m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {16.15m+lzth*4.19m}
R_Rth2 1 2 {22.28m+lzth*5.78m}
R_Rth3 2 3 {125.03m+lzth*32.41m}
R_Rth4 3 4 {182.41m+lzth*255.55m}
R_Rth5 4 Tcase {177.81m+lzth*249.53m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPZ60R120P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 1.7m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPZ60R120P7_L0

********************************************************************************

.SUBCKT IPZ60R120P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.02E-03 Rg=7.10 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM Lss=5.13E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R120P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.02E-03 Rg=7.10 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM Lss=5.13E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 20.845m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*253.25m}
R_Rth5 4 Tcase {324.3m+lzth*245.53m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS
********************************************************************************

.SUBCKT IPL60R125P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 4.8m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPL60R125P7_L0

********************************************************************************

.SUBCKT IPL60R125P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.95E-03 Rg=7.10 Rdp=2.00E-06 Ls=9.58E-10 Ld=4.34E-
11
.PARAM Lg=3.76E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=125m
.PARAM Lss=2.65E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************

.SUBCKT IPL60R125P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.95E-03 Rg=7.10 Rdp=2.00E-06 Ls=9.58E-10 Ld=4.34E-
11
.PARAM Lg=3.76E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=125m
.PARAM Lss=2.65E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 5.405m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*249.99m}
R_Rth5 4 Tcase {153.92m+lzth*242.27m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPB60R120P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 1.4m
Rg g1 g2 7.1
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 41.646 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.1 TC=12m
.MODEL MVDR NMOS (KP=68.02 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=2.14n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=5733p N=1.5 RS=16u EG=1.12 TT=250n)
Rdiode d1 21 6.29m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.33n
.MODEL DGD D(M=0.9 CJO=1.33n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.61n
.ENDS IPB60R120P7_L0

********************************************************************************

.SUBCKT IPB60R120P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.95E-04 Rg=7.10 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R120P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.95E-04 Rg=7.10 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=8.19 Inn={1.0*8.19} Unn=10.0 Rmax=120m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 78.787u
C_CZth2 0 1 475.107u
C_CZth3 0 2 670.739u
C_CZth4 0 3 3.813m
C_CZth5 0 4 9.039m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {20.71m+lzth*5.37m}
R_Rth2 1 2 {28.56m+lzth*7.4m}
R_Rth3 2 3 {160.29m+lzth*41.55m}
R_Rth4 3 4 {222.1m+lzth*307.3m}
R_Rth5 4 Tcase {216.2m+lzth*299.58m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPZ60R180P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 1.7m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPZ60R180P7_L0

********************************************************************************

.SUBCKT IPZ60R180P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.02E-03 Rg=11.0 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM Lss=5.13E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZ60R180P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.02E-03 Rg=11.0 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM Lss=5.13E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 14.227m
C_CZth6 0 Tcase 500m
C_CZth7 0 6 1.9
C_CZth8 0 7 2
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*320.31m}
R_Rth5 4 Tcase {429.85m+lzth*309m}
R_Rth6 Tcase 6 200m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPB60R180P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 1.4m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPB60R180P7_L0

********************************************************************************

.SUBCKT IPB60R180P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.95E-04 Rg=11.0 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R180P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.95E-04 Rg=11.0 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-
09
.PARAM Lg=6.35E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 5.73m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*391.95m}
R_Rth5 4 Tcase {286.57m+lzth*380.64m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPL60R285P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 8.8m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.214 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPL60R285P7_L0
********************************************************************************

.SUBCKT IPL60R285P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.41E-03 Rg=7.00 Rdp=2.03E-06 Ls=1.13E-09 Ld=4.38E-
11
.PARAM Lg=3.74E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=285m
.PARAM Lss=2.61E-09 Rss=3.30E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPL60R285P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=3.41E-03 Rg=7.00 Rdp=2.03E-06 Ls=1.13E-09 Ld=4.38E-
11
.PARAM Lg=3.74E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=285m
.PARAM Lss=2.61E-09 Rss=3.30E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 2.521m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*438.92m}
R_Rth5 4 Tcase {293.88m+lzth*422.38m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPB60R280P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 4.4
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.214 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPB60R280P7_L0

********************************************************************************

.SUBCKT IPB60R280P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.53E-03 Rg=7.00 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-
09
.PARAM Lg=6.36E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R280P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.53E-03 Rg=7.00 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-
09
.PARAM Lg=6.36E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 3.477m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*527.94m}
R_Rth5 4 Tcase {369.07m+lzth*511.4m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPB60R360P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 4.7m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.303 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPB60R360P7_L0

********************************************************************************

.SUBCKT IPB60R360P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.53E-03 Rg=6.20 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-
09
.PARAM Lg=6.36E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R360P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.53E-03 Rg=6.20 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-
09
.PARAM Lg=6.36E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 2.051m
C_CZth6 0 Tcase 140m
C_CZth7 0 6 220m
C_CZth8 0 7 500m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*670.14m}
R_Rth5 4 Tcase {451.88m+lzth*646.73m}
R_Rth6 Tcase 6 400m
R_Rth7 6 7 30
.ENDS

********************************************************************************

.SUBCKT IPA60R600P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPA60R600P7_L0

********************************************************************************

.SUBCKT IPA60R600P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=6.30 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R600P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.37E-03 Rg=6.30 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 2m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*289.62m}
R_Rth5 4 5 {568.56m+lzth*252.01m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*886m}
.ENDS

********************************************************************************

.SUBCKT IPAW60R600P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPAW60R600P7S_L0

********************************************************************************

.SUBCKT IPAW60R600P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.88E-03 Rg=6.30 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPAW60R600P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.88E-03 Rg=6.30 Rdp=2.73E-04 Ls=6.62E-09 Ld=3.93E-
09
.PARAM Lg=1.08E-08 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 2m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*289.62m}
R_Rth5 4 5 {568.56m+lzth*252.01m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*886m}
.ENDS

********************************************************************************

.SUBCKT IPD60R180P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 1m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPD60R180P7S_L0

********************************************************************************

.SUBCKT IPD60R180P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=11.0 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R180P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=2.31E-03 Rg=11.0 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 3.689m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*426.03m}
R_Rth5 4 Tcase {218.4m+lzth*414.73m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPA60R180P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPA60R180P7S_L0

********************************************************************************

.SUBCKT IPA60R180P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.06E-04 Rg=11.0 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R180P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=9.06E-04 Rg=11.0 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-
09
.PARAM Lg=6.17E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
 +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 53.776u
C_CZth2 0 1 324.279u
C_CZth3 0 2 457.806u
C_CZth4 0 3 2.602m
C_CZth5 0 4 6.876m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*205.55m}
R_Rth5 4 5 {286.57m+lzth*194.25m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.38}
.ENDS

********************************************************************************

.SUBCKT IPD60R280P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.3m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.214 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPD60R280P7S_L0

********************************************************************************

.SUBCKT IPD60R280P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=7.00 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R280P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=2.31E-03 Rg=7.00 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 2.521m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*565.53m}
R_Rth5 4 Tcase {293.88m+lzth*548.99m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPA60R280P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.215 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPA60R280P7S_L0

********************************************************************************

.SUBCKT IPA60R280P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=7.00 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************
.SUBCKT IPA60R280P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0
Zthtype=0
.PARAM Rs=3.37E-03 Rg=7.00 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=3.82 Inn={1.0*3.82} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 36.748u
C_CZth2 0 1 221.6u
C_CZth3 0 2 312.848u
C_CZth4 0 3 1.778m
C_CZth5 0 4 4.172m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*261.41m}
R_Rth5 4 5 {369.07m+lzth*244.87m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.35}
.ENDS

********************************************************************************

.SUBCKT IPD60R360P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.303 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPD60R360P7S_L0

********************************************************************************

.SUBCKT IPD60R360P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=6.20 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R360P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=2.31E-03 Rg=6.20 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 1.782m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*711.28m}
R_Rth5 4 Tcase {369.59m+lzth*687.88m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPA60R360P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.304 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPA60R360P7S_L0

********************************************************************************

.SUBCKT IPA60R360P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=6.20 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R360P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.37E-03 Rg=6.20 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 1.257m
C_CZth5 0 4 2.461m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*296.11m}
R_Rth5 4 5 {451.88m+lzth*272.71m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*1.22}
.ENDS

********************************************************************************

.SUBCKT IPD60R600P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.2m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPD60R600P7S_L0

********************************************************************************

.SUBCKT IPD60R600P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2.31E-03 Rg=6.30 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPD60R600P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=2.31E-03 Rg=6.30 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-
11
.PARAM Lg=4.06E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 1.109m
C_CZth6 0 Tcase 42.5m
C_CZth7 0 6 65m
C_CZth8 0 7 90m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*934.8m}
R_Rth5 4 Tcase {476.22m+lzth*897.19m}
R_Rth6 Tcase 6 500m
R_Rth7 6 7 50
.ENDS

********************************************************************************

.SUBCKT IPA60R600P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPA60R600P7S_L0

********************************************************************************

.SUBCKT IPA60R600P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.37E-03 Rg=6.30 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
 +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R600P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.37E-03 Rg=6.30 Rdp=2.35E-04 Ls=3.68E-09 Ld=2.13E-
09
.PARAM Lg=6.18E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 782.137u
C_CZth5 0 4 2m
C_CZth6 0 5 18m
C_CZth7 0 6 500m
C_CZth8 0 7 600m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*289.62m}
R_Rth5 4 5 {568.56m+lzth*252.01m}
R_Rth6 5 6 400m
R_Rth7 6 7 5
R_Rth8 5 Tcase {2.1+lzth*886m}
.ENDS

********************************************************************************

.SUBCKT IPN60R360P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.1m
Rg g1 g2 6.2
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.303 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPN60R360P7S_L0

********************************************************************************

.SUBCKT IPN60R360P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=7.52E-03 Rg=6.20 Rdp=5.83E-05 Ls=1.85E-09 Ld=3.79E-
10
.PARAM Lg=2.59E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPN60R360P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=7.52E-03 Rg=6.20 Rdp=5.83E-05 Ls=1.85E-09 Ld=3.79E-
10
.PARAM Lg=2.59E-09 act=2.7 Inn={1.0*2.7} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 25.974u
C_CZth2 0 1 156.629u
C_CZth3 0 2 221.123u
C_CZth4 0 3 756u
C_CZth5 0 4 12m
C_CZth6 0 5 15m
C_CZth7 0 6 35m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {2.57+lzth*298.13m}
R_Rth5 4 5 {7.7+lzth*274.73m}
R_Rth6 5 6 45
R_Rth8 5 Tcase {5.2+lzth*555.52m}
.ENDS

********************************************************************************

.SUBCKT IPN60R600P7S_L0 drain gate source

Lg gate g1 3n
Ld drain d1 1n
Ls source s1 2n
Rs s1 s2 3.2m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPN60R600P7S_L0

********************************************************************************
.SUBCKT IPN60R600P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=7.52E-03 Rg=6.30 Rdp=5.83E-05 Ls=1.85E-09 Ld=3.79E-
10
.PARAM Lg=2.59E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPN60R600P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=7.52E-03 Rg=6.30 Rdp=5.83E-05 Ls=1.85E-09 Ld=3.79E-
10
.PARAM Lg=2.59E-09 act=1.68 Inn={1.0*1.68} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_CZth1 Tj 0 16.162u
C_CZth2 0 1 97.458u
C_CZth3 0 2 137.587u
C_CZth4 0 3 500u
C_CZth5 0 4 12m
C_CZth6 0 5 15m
C_CZth7 0 6 35m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {3.42+lzth*58.03m}
R_Rth5 4 5 {8.19+lzth*20.42m}
R_Rth6 5 6 45
R_Rth8 5 Tcase {5.2+lzth*31.05m}
.ENDS

********************************************************************************
.SUBCKT IPB60R045P7_L0 drain gate source
Lg gate g1 4n
Ld drain d1 1n
Ls source s1 2.5n
Rs s1 s2 921.3u
Rg g1 g2 2.03
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 120 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.038 TC=12m
.MODEL MVDR NMOS (KP=180 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 3.4m TC=0.95m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.8n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 4n
.ENDS IPB60R045P7_L0

********************************************************************************

.SUBCKT IPB60R045P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.88E-04 Rg=2.03 Rdp=3.76E-04 Ls=2.80E-09 Ld=2.38E-
09
.PARAM Lg=6.35E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPB60R045P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=5.88E-04 Rg=2.03 Rdp=3.76E-04 Ls=2.80E-09 Ld=2.38E-
09
.PARAM Lg=6.35E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 208.272u
C_Czth2 0 1 1.256m
C_Czth3 0 2 1.773m
C_Czth4 0 3 10.079m
C_Czth5 0 4 26.171m
C_Czth6 0 Tcase 140.0m
C_Czth7 0 6 220.0m
C_Czth8 0 7 500.0m
R_Rth1 Tj 1 {7.83m+lzth*2.03m}
R_Rth2 1 2 {10.81m+lzth*2.8m}
R_Rth3 2 3 {60.64m+lzth*15.72m}
R_Rth4 3 4 {99.22m+lzth*165.44m}
R_Rth5 4 Tcase {96.99m+lzth*162.52m}
R_Rth6 Tcase 6 400.0m
R_Rth7 6 7 30.0
.ENDS

********************************************************************************

.SUBCKT IPA60R160P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.6m
Rg g1 g2 9.00
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 34 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.108 TC=12m
.MODEL MVDR NMOS (KP=55 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9m TC=0.8m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.35n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.4n
.ENDS IPA60R160P7_L0

********************************************************************************

.SUBCKT IPA60R160P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.29E-04 Rg=9.00 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=6.913 Inn={1.0*6.913} Unn=10.0 Rmax=160m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPA60R160P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=9.00 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=6.913 Inn={1.0*6.913} Unn=10.0 Rmax=160m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 66.474u
C_Czth2 0 1 400.853u
C_Czth3 0 2 565.91u
C_Czth4 0 3 3.217m
C_Czth5 0 4 8.892m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {24.54m+lzth*6.36m}
R_Rth2 1 2 {33.85m+lzth*8.78m}
R_Rth3 2 3 {189.98m+lzth*49.25m}
R_Rth4 3 4 {252.83m+lzth*183.55m}
R_Rth5 4 5 {245.84m+lzth*174.41m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*1.45}
.ENDS

********************************************************************************

.SUBCKT IPP60R160P7_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 1.5m
Rg g1 g2 9.00
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 34 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.108 TC=12m
.MODEL MVDR NMOS (KP=55 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9m TC=0.8m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 1.35n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.4n
.ENDS IPP60R160P7_L0

********************************************************************************

.SUBCKT IPP60R160P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=9.29E-04 Rg=9.00 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=6.913 Inn={1.0*6.913} Unn=10.0 Rmax=160m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************

.SUBCKT IPP60R160P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.29E-04 Rg=9.00 Rdp=3.62E-04 Ls=3.36E-09 Ld=2.53E-
09
.PARAM Lg=6.43E-09 act=6.913 Inn={1.0*6.913} Unn=10.0 Rmax=160m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 66.474u
C_Czth2 0 1 400.853u
C_Czth3 0 2 565.91u
C_Czth4 0 3 3.217m
C_Czth5 0 4 7.41m
C_Czth6 0 Tcase 140.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 450.0m
R_Rth1 Tj 1 {24.54m+lzth*6.36m}
R_Rth2 1 2 {33.85m+lzth*8.78m}
R_Rth3 2 3 {189.98m+lzth*49.25m}
R_Rth4 3 4 {252.83m+lzth*375.85m}
R_Rth5 4 Tcase {245.84m+lzth*366.7m}
R_Rth6 Tcase 6 400.0m
R_Rth7 6 7 15.8
.ENDS

********************************************************************************

.SUBCKT IPW60R045P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 928.5u
Rg g1 g2 2.03
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 120 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.038 TC=12m
.MODEL MVDR NMOS (KP=180 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 3.4m TC=0.95m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.8n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 4n
.ENDS IPW60R045P7_L0

********************************************************************************

.SUBCKT IPW60R045P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=6.17E-04 Rg=2.03 Rdp=7.67E-05 Ls=3.52E-09 Ld=2.25E-
09
.PARAM Lg=8.95E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R045P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=6.17E-04 Rg=2.03 Rdp=7.67E-05 Ls=3.52E-09 Ld=2.25E-
09
.PARAM Lg=8.95E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 208.272u
C_Czth2 0 1 1.256m
C_Czth3 0 2 1.773m
C_Czth4 0 3 10.079m
C_Czth5 0 4 55.102m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {7.83m+lzth*2.03m}
R_Rth2 1 2 {10.81m+lzth*2.8m}
R_Rth3 2 3 {60.64m+lzth*15.72m}
R_Rth4 3 4 {99.22m+lzth*141.19m}
R_Rth5 4 Tcase {145.49m+lzth*138.27m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPW60R024P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 3n
Ls source s1 5n
Rs s1 s2 928.5u
Rg g1 g2 2.80
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 150.008 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.019 TC=12m
.MODEL MVDR NMOS (KP=320 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 65p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 5m TC=0
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 7n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 7.3n
.ENDS IPW60R024P7_L0

********************************************************************************

.SUBCKT IPW60R024P7_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=4.38E-04 Rg=2.80 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-
09
.PARAM Lg=8.38E-09 act=40.597 Inn={1.0*40.597} Unn=10.0 Rmax=24m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPW60R024P7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=4.38E-04 Rg=2.80 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-
09
.PARAM Lg=8.38E-09 act=40.597 Inn={1.0*40.597} Unn=10.0 Rmax=24m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 390.57u
C_Czth2 0 1 2.355m
C_Czth3 0 2 3.325m
C_Czth4 0 3 18.902m
C_Czth5 0 4 103.333m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {4.18m+lzth*1.08m}
R_Rth2 1 2 {5.76m+lzth*1.49m}
R_Rth3 2 3 {32.33m+lzth*8.38m}
R_Rth4 3 4 {57.49m+lzth*120.19m}
R_Rth5 4 Tcase {84.46m+lzth*118.63m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPZA60R045P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 928.5u
Rg g1 g2 2.03
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 120 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.038 TC=12m
.MODEL MVDR NMOS (KP=180 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 3.4m TC=0.95m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 2.8n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 4n
.ENDS IPZA60R045P7_L0

********************************************************************************

.SUBCKT IPZA60R045P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=5.43E-04 Rg=2.03 Rdp=1.19E-04 Ls=2.41E-09 Ld=2.25E-
09
.PARAM Lg=8.44E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
.PARAM Lss=5.14E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZA60R045P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=5.43E-04 Rg=2.03 Rdp=1.19E-04 Ls=2.41E-09 Ld=2.25E-
09
.PARAM Lg=8.44E-09 act=21.648 Inn={1.0*21.648} Unn=10.0 Rmax=45m
.PARAM Lss=5.14E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_Czth1 Tj 0 208.272u
C_Czth2 0 1 1.256m
C_Czth3 0 2 1.773m
C_Czth4 0 3 10.079m
C_Czth5 0 4 55.102m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {7.83m+lzth*2.03m}
R_Rth2 1 2 {10.81m+lzth*2.8m}
R_Rth3 2 3 {60.64m+lzth*15.72m}
R_Rth4 3 4 {99.22m+lzth*141.19m}
R_Rth5 4 Tcase {145.49m+lzth*138.27m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPZA60R024P7_L0 drain gate source

Lg gate g1 5n
Ld drain d1 5n
Ls source s1 0n
Rs s1 s2 928.5u
Rg g1 g2 2.80
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 150.008 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.019 TC=12m
.MODEL MVDR NMOS (KP=320 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 65p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=7.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=20650p N=1.5 RS=5u EG=1.12 TT=250n)
Rdiode d1 21 5m TC=0
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 7n
.MODEL DGD D(M=0.9 CJO=4.81n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 7.3n
.ENDS IPZA60R024P7_L0

********************************************************************************

.SUBCKT IPZA60R024P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.83E-04 Rg=2.80 Rdp=1.19E-04 Ls=2.03E-09 Ld=2.15E-
09
.PARAM Lg=8.40E-09 act=40.597 Inn={1.0*40.597} Unn=10.0 Rmax=24m
.PARAM Lss=5.11E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZA60R024P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=3.83E-04 Rg=2.80 Rdp=1.19E-04 Ls=2.03E-09 Ld=2.15E-
09
.PARAM Lg=8.40E-09 act=40.597 Inn={1.0*40.597} Unn=10.0 Rmax=24m
.PARAM Lss=5.11E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_Czth1 Tj 0 390.57u
C_Czth2 0 1 2.355m
C_Czth3 0 2 3.325m
C_Czth4 0 3 18.902m
C_Czth5 0 4 103.333m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {4.18m+lzth*1.08m}
R_Rth2 1 2 {5.76m+lzth*1.49m}
R_Rth3 2 3 {32.33m+lzth*8.38m}
R_Rth4 3 4 {57.49m+lzth*120.19m}
R_Rth5 4 Tcase {84.46m+lzth*118.63m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************

.SUBCKT IPAN60R600P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 6.3
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 8.543 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.488 TC=12m
.MODEL MVDR NMOS (KP=13.95 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.6p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.44n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1176p N=1.5 RS=79u EG=1.12 TT=250n)
Rdiode d1 21 30.68m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.36n
.MODEL DGD D(M=0.9 CJO=0.36n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.37n
.ENDS IPAN60R600P7S_L0

********************************************************************************

.SUBCKT IPAN60R600P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.28E-03 Rg=6.30 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=1.678 Inn={1.0*1.678} Unn=10.0 Rmax=600m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************
.SUBCKT IPAN60R600P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0
Zthtype=0
.PARAM Rs=3.28E-03 Rg=6.30 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=1.678 Inn={1.0*1.678} Unn=10.0 Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 16.162u
C_Czth2 0 1 97.458u
C_Czth3 0 2 137.587u
C_Czth4 0 3 782.137u
C_Czth5 0 4 2.0m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {100.95m+lzth*26.17m}
R_Rth2 1 2 {139.25m+lzth*36.1m}
R_Rth3 2 3 {781.42m+lzth*202.58m}
R_Rth4 3 4 {597.33m+lzth*288.9m}
R_Rth5 4 5 {568.56m+lzth*251.29m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*883.45m}
.ENDS

********************************************************************************

.SUBCKT IPAN60R360P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.1m
Rg g1 g2 5.06
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 13.73 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.304 TC=12m
.MODEL MVDR NMOS (KP=22.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6.4p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=0.7n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=1890p N=1.5 RS=49u EG=1.12 TT=250n)
Rdiode d1 21 19.09m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.5n
.MODEL DGD D(M=0.9 CJO=0.5n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.59n
.ENDS IPAN60R360P7S_L0

********************************************************************************

.SUBCKT IPAN60R360P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.28E-03 Rg=5.06 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=2.702 Inn={1.0*2.702} Unn=10.0 Rmax=360m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPAN60R360P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.28E-03 Rg=5.06 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=2.702 Inn={1.0*2.702} Unn=10.0 Rmax=360m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 25.974u
C_Czth2 0 1 156.629u
C_Czth3 0 2 221.123u
C_Czth4 0 3 1.257m
C_Czth5 0 4 2.461m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {62.82m+lzth*16.28m}
R_Rth2 1 2 {86.64m+lzth*22.46m}
R_Rth3 2 3 {486.22m+lzth*126.05m}
R_Rth4 3 4 {469.78m+lzth*295.49m}
R_Rth5 4 5 {451.88m+lzth*272.09m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*1.22}
.ENDS

********************************************************************************

.SUBCKT IPAN60R280P7S_L0 drain gate source

Lg gate g1 4n
Ld drain d1 2.5n
Ls source s1 2.5n
Rs s1 s2 5.3m
Rg g1 g2 7
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 19.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.215 TC=12m
.MODEL MVDR NMOS (KP=31.73 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=2674p N=1.5 RS=35u EG=1.12 TT=250n)
Rdiode d1 21 13.49m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.71n
.MODEL DGD D(M=0.9 CJO=0.71n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 0.84n
.ENDS IPAN60R280P7S_L0

********************************************************************************

.SUBCKT IPAN60R280P7S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=3.28E-03 Rg=7.00 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=3.821 Inn={1.0*3.821} Unn=10.0 Rmax=280m
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPAN60R280P7S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0

Zthtype=0
.PARAM Rs=3.28E-03 Rg=7.00 Rdp=3.62E-04 Ls=4.07E-09 Ld=2.64E-
09
.PARAM Lg=6.43E-09 act=3.821 Inn={1.0*3.821} Unn=10.0 Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 36.748u
C_Czth2 0 1 221.6u
C_Czth3 0 2 312.848u
C_Czth4 0 3 1.778m
C_Czth5 0 4 4.172m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {44.4m+lzth*11.51m}
R_Rth2 1 2 {61.24m+lzth*15.88m}
R_Rth3 2 3 {343.66m+lzth*89.09m}
R_Rth4 3 4 {381.72m+lzth*261.28m}
R_Rth5 4 5 {369.07m+lzth*244.74m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*1.35}
.ENDS

********************************************************************************

.SUBCKT IPZA60R180P7_L0 drain gate source

Lg gate g1 8.45E-09
Ld drain d1 2.38E-09
Ls source s1 3.12E-09
Rs s1 s2 1.02E-03
Rg g1 g2 11
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= 28.425 VTO=4.4 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3)
Rd d2 d1a 0.147 TC=12m
.MODEL MVDR NMOS (KP=46.42 VTO=-1 LAMBDA=0.15)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 9.1p
Dbd s2 d2 Dbt
.MODEL Dbt D(BV=600 M=0.9 CJO=1.46n VJ=0.5V)
Dbody s2 21 DBODY
.MODEL DBODY D(IS=3913p N=1.5 RS=24u EG=1.12 TT=250n)
Rdiode d1 21 9.22m TC=1m
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 0.91n
.MODEL DGD D(M=0.9 CJO=0.91n VJ=0.5)
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 1.1n
.ENDS IPZA60R180P7_L0

********************************************************************************

.SUBCKT IPZA60R180P7_L1 drain gate source source_sense PARAMS: dVth=0 dRdson=0

.PARAM Rs=1.02E-03 Rg=11.0 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM Lss=5.13E-09 Rss=4.20E-02
X1 dd g s Tj Tj cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS

********************************************************************************

.SUBCKT IPZA60R180P7_L3 drain gate source source_sense Tj Tcase PARAMS: dVth=0

dRdson=0 Zthtype=0
.PARAM Rs=1.02E-03 Rg=11.0 Rdp=1.19E-04 Ls=3.12E-09 Ld=2.38E-
09
.PARAM Lg=8.45E-09 act=5.59 Inn={1.0*5.59} Unn=10.0 Rmax=180m
.PARAM Lss=5.13E-09 Rss=4.20E-02 lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_600_p76_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn}
Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
L_Lss source_sense lssrss {Lss}
R_Lss source_sense lssrss 10
R_Rss lssrss s {Rss}
C_Czth1 Tj 0 53.776u
C_Czth2 0 1 324.279u
C_Czth3 0 2 457.806u
C_Czth4 0 3 2.602m
C_Czth5 0 4 14.227m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {30.34m+lzth*7.87m}
R_Rth2 1 2 {41.85m+lzth*10.85m}
R_Rth3 2 3 {234.85m+lzth*60.88m}
R_Rth4 3 4 {295.21m+lzth*319.81m}
R_Rth5 4 Tcase {429.85m+lzth*308.5m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS

********************************************************************************