SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.

,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4410
N-Channel Enhancement Mode Power MOSFET
SO-8L D
D
Description D
D
The 4410 uses advanced trench technology to provide
G
excellent RDS(ON) and low gate charge . The complementary S G
S S
MOSFETs may be used to form a level shifted high side S S
Pin 1 SO-8 S
switch, and for a host of other applications.
Equiva len t Cir cu it
D
General Features

PRODUCT SUMMARY

VDSS ID RDS(on) (mΩ) Max G

S

10 A 13.5 @ VGS = 10V P

MARKING
30V
5A 18.0 @ VGS = 4.5V

4410
● High power and current handing capability
TFCYWP
● Lead free product is acquired o
● Surface mount package
Y :year code W :week code

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain
TA=25°C ID 10
Current A A
Pulsed Drain Current B IDM 45
TA=25°C 2.3
PD W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W

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 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4410
Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID= 250µA, VGS=0V 30 V

IDSS Zero Gate Voltage Drain Current VDS= 24V, V GS=0V 500 nA

IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS ID= 250µA 1.0 1.6 2.5 V
ID(ON) On state drain current VGS= 10V , V DS = 5V 45 A

VGS= 10V, ID= 10A 11 13.5 mΩ

RDS(ON) Static Drain-Source On-Resistance
VGS= 4.5V, ID= 5A 16 18.0 mΩ
gFS Forward Transconductance VDS= 15V, I D = 10A 9 S
VSD Diode Forward Voltage IS= 3A , VGS=0V 0.8 1.2 V
IS Maximum Body-Diode Continuous Current 3 A

DYNAMIC PARAMETERS
Ciss Input Capacitance 710 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 155 pF
Crss Reverse Transfer Capacitance 145 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.0 Ω

SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V) 8 nC
Qg (4.5V) Total Gate Charge (4.5V) 6.2 nC
VDD= 20V, V GEN = 10V, ID= 9A
Qgs Gate Source Charge 3.3 nC
Qgd Gate Drain Charge 2.7 nC
tD(on) Turn-On DelayTime 7.0 ns
tr Turn-On Rise Time VDD= 15V, V GEN = 10V,R L = 15Ω
, 7.0 ns
tD(off) Turn-Off DelayTime RGEN=3Ω I D= 9A 22 ns
tf Turn-Off Fall Time 7.0 ns
trr Body Diode Reverse Recovery Time IF= 10A, dI/dt=100A/µs 24 ns
Qrr Body Diode Reverse Recovery Charge IF= 10A, dI/dt=100A/µs 14 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

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 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4410
Characteristics Curve

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 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4410
Characteristics Curve

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 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4410

SOP-8 Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 1.350 1.750 0.053 0.069
A1 0.100 0.250 0.004 0.010
A2 1.350 1.550 0.053 0.061
b 0.330 0.510 0.013 0.020
c 0.170 0.250 0.006 0.010
D 4.700 5.100 0.185 0.200
E 3.800 4.000 0.150 0.157
E1 5.800 6.200 0.228 0.244
e 1.270(BSC) 0.050(BSC)
L 0.400 1.270 0.016 0.050

θ 0° 8° 0° 8°

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