Scribd
Upload
36 views1 page

A1015 (2) Pot

This document provides information about a SOT-23 plastic-encapsulated transistor including its features, maximum ratings, electrical characteristics, and hFE classification. The transistor has a high voltage and current capacity and excellent hFE linearity. Its key specifications include a collector current of 150mA, power dissipation of 200mW, and DC current gain range of 130-400.

Uploaded by

andi muhanim
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
36 views1 page

A1015 (2) Pot

This document provides information about a SOT-23 plastic-encapsulated transistor including its features, maximum ratings, electrical characteristics, and hFE classification. The transistor has a high voltage and current capacity and excellent hFE linearity. Its key specifications include a collector current of 150mA, power dissipation of 200mW, and DC current gain range of 130-400.

Uploaded by

andi muhanim
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23Plastic-Encapsulate Transistors
A1015 TRANSISTOR (PNP)
SOT-23

FEATURES

z High voltage and high current


z Excellent hFE Linearity
1. BASE
z Low niose
2. EMITTER
z Complementary to C1815
3. COLLECTOR

MARKING: BA

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit


VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
RθJA Thermal Resistance From Junction To Ambient 625 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= -100u A,IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V

Collector cut-off current ICBO VCB=-50V ,IE=0 -0.1 μA

Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 μA

Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 μA

DC current gain hFE VCE=-6V,IC= -2mA 130 400

Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V


VCE=-10V,IC= -1mA
Transition frequency fT 80 MHz
f=30MHz

CLASSIFICATION OF hFE
Rank L H
Range 130-200 200-400

B,Nov,2012

You might also like