2SK2586

Silicon N-Channel MOS FET

ADE-208-358 C
4th. Edition

Application

High speed power switching

Features

• Low on-resistance
• R DS(on) = 7 m typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source

Outline

TO-3P

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK2586

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
2
Drain current ID* 60 A
1
Drain peak current I D(pulse)* 240 A
2
Body to drain diode reverse drain current I DR* 60 A
3
Avalanche current I AP * 45 A
3
Avalanche energy EAR* 174 mJ
2
Channel dissipation Pch* 125 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω

2
 2SK2586
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown V(BR)DSS 60 — — V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS — — 100 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 7 10 mΩ I D = 30 A
resistance VGS = 10 V*1
— 10 16 mΩ I D = 30 A
VGS = 4 V*1
Forward transfer admittance |yfs| 35 60 — S I D = 30 A
VDS = 10 V*1
Input capacitance Ciss — 3550 — pF VDS = 10 V
Output capacitance Coss — 1760 — pF VGS = 0
Reverse transfer capacitance Crss — 500 — pF f = 1 MHz
Turn-on delay time t d(on) — 35 — ns I D = 30 A
Rise time tr — 260 — ns VGS = 10 V
Turn-off delay time t d(off) — 480 — ns RL = 1.0 Ω
Fall time tf — 370 — ns
Body to drain diode forward VDF — 0.94 — V I F = 60 A, VGS = 0
voltage
Body to drain diode reverse t rr — 140 — ns I F = 60 A, VGS = 0
recovery time diF / dt = 50 A / µs
Note: 1. Pulse Test

See characteristic curves of 2SK2529.

3
2SK2586

Power vs. Temperature Derating Maximum Safe Operation Area

200 500
10
µs
Pch (W)

200 10
0

I D (A)
100 µs
150 PW 1
50 m
= s
10

D
Channel Dissipation

C
Drain Current
m

O
20 s

pe
100 (1

ra
sh

tio
10 Operation in ot

n
)

(T
this area is

c
5 limited by R DS(on)

=
25
50

°C
2

)
1
Ta = 25 °C
0.5
0 50 100 150 200 0.1 0.3 1 3 10 30 100
Case Temperature Tc (°C) Drain to Source Voltage V DS (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3
Normalized Transient Thermal Impedance
γ s (t)

Tc = 25°C
1
D=1

0.5
0.3

0.2
θ ch – c(t) = γ s (t) • θ ch – c
0.1 0.1 θ ch – c = 1.0 °C/W, Tc = 25 °C
0.05
PDM PW
D=
0.02 T
0.03 1 lse
0.0 t pu PW
ho
1s T

0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)

4
 Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8
18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Weight (reference value) 5.0 g
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