UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER

HIGH FREQUENCY OSC NPN
TRANSISTOR

DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
1

FEATURES
*Collector-Emitter voltage:
BVCBO=50V
TO-92
*Collector current up to 150mA
*High hFE linearity
*Complimentary to 2SA733

1:EMITTER 2:COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Dissipation(Ta=25°C) Pc 250 mW
Collector Current Ic 150 mA
Base Current IB 50 mA
Junction Temperature Tj 125 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA,IB=0 50 V
Collector Cut-Off Current ICBO VCB=40V,IE=0 100 nA
Emitter Cut-Off Current IEBO VEB=3V,Ic=0 100 nA
DC Current Gain(note) hFE VCE=6V,Ic=1mA 70 700

Collector-Emitter Saturation Voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.3 V

Current Gain Bandwidth Product fT VCE=10V,Ic=50mA 100 190 MHz
Output Capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF
Noise Figure NF Ic=-0.1mA,VCE=6V 4.0 6.0 dB
RG=10kΩ,f=100Hz

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R201-005,A
UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE
RANK O G Y L
RANGE 70-140 200-400 120-240 350-700

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.1 Static characteristics Fig.2 DC current Gain Fig.3 Base-Emitter on Voltage

100 3 2
10 10

VCE=6V
Ic,Collector current (mA)

Ic,Collector current (mA)

80
HFE, DC current Gain

1 VCE=6V
IB=300 µA 10
2 10
60
IB=250 µA
IB=200 µA
40
1 0
IB=150 µA 10 10

20 IB=100 µA

IB=50 µA
0 0 -1
10 10
0 4 8 12 16 20 -1 0 1 2 3 0 0.2 0.4 0.6 0.8 1.0
10 10 10 10 10

Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V)

Fig.5 Current gain-bandwidth Fig.6 Collector output

Fig.4 Saturation voltage
product Capacitance
4 3 2
10 10 10
Ic=10*IB
Cob,Capacitance (pF)
Current Gain-bandwidth
Saturation voltage (MV)

VCE=6V
f=1MHz
product,f T(MHz)

3 2
10 VBE(sat) 10 1 IE=0
10

2 1 0
10 10 10
VCE(sat)

-1
1 0 10
10 10
-1 0 1 2 3 -1 0 1 2 0 1 2 3
10 10 10 10 10 10 10 10 10 10 10 10 10

Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R201-005,A