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Datasheet

This document provides specifications for an N-channel power MOSFET device. It includes maximum ratings, electrical characteristics, switching performance metrics, and application examples such as light dimmers and inrush current limiters.

Uploaded by

Sadegh Shebani
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© © All Rights Reserved
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26 views13 pages

Datasheet

This document provides specifications for an N-channel power MOSFET device. It includes maximum ratings, electrical characteristics, switching performance metrics, and application examples such as light dimmers and inrush current limiters.

Uploaded by

Sadegh Shebani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 13

STGD5NB120SZ-1

STGD5NB120SZ
N-CHANNEL 5A - 1200V DPAK/IPAK
INTERNALLY CLAMPED PowerMESH™ IGBT

Table 1: General Features Figure 1: Package


TYPE VCES VCE(sat) IC

STGD5NB120SZ 1200 V < 2.0 V 5A


STGD5NB120SZ-1 1200 V < 2.0 V 5A
■ HIGH INPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP (Vcesat)
■ HIGHT CURRENT CAPABILITY 3 3
1 2
■ OFF LOSSES INCLUDE TAIL CURRENT 1
■ HIGH VOLTAGE CLAMPING FEATURES DPAK IPAK
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve Figure 2: Internal Schematic Diagram
minimum on-voltage drop for low frequency appli-
cations (<1kHz). The built in collector-gate zener
exibits a very precise active clamping.

APPLICATIONS
■ LIGHT DIMMER
■ INRUSH CURRENT LIMITATION

■ PRE-HEATING FOR ELECTRONIC LAMP

BALLAST

Table 2: Order Code


PART NUMBER MARKING PACKAGE PACKAGING
STGD5NB120SZT4 GD5NB120SZ DPAK TAPE & REEL
STGD5NB120SZ-1 GD5NB120SZ IPAK TUBE

Rev. 2
January 2005 1/13
STGD5NB120SZ-1 - STGD5NB120SZ

Table 3: Absolute Maximum ratings


Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 1200 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage ±20 V
IC Collector Current (continuous) at TC = 25°C 10 A
IC Collector Current (continuous) at TC = 100°C 5 A
ICM () Collector Current (pulsed) 20 A
PTOT Total Dissipation at TC = 25°C 55 W
Derating Factor 0.44 W/°C
Single Pulse Avalanche Energy at Tj = 25°C 10 mJ
Eas (1)
Single Pulse Avalanche Energy at Tj = 100°C 7 mJ
Tstg Storage Temperature –55 to 150 °C
Tj Operating Junction Temperature range 150 °C
() Pulse width limited by safe operating area
(1) VCE = 50 V , IAV = 3.3 A
Table 4: Thermal Data
Min. Typ. Max.
Rthj-case Thermal Resistance Junction-case 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient 100 °C/W

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)


Table 5: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 10 mA, VGE = 0 V 1200 V
Voltage
ICES Collector cut-off Current VCE = 900 V 50 µA
(VGE = 0) VCE = 900 V, Tj = 125 °C 250 µA
IGES Gate-Emitter Leakage VGE = ±20V , VCE = 0 V ±100 nA
Current (VCE = 0)
VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA 2 5 V
VGE Gate Emitter Voltage VCE =2.5 V, IC = 2 A, 6.5 V
Tj = 25÷125°C
VCE(sat) Collector-Emitter Saturation VGE = 15V, IC = 5 A 1.3 2.0 V
Voltage VGE = 15V, IC = 5 A, Tj =125°C 1.2 V

2/13
STGD5NB120SZ-1 - STGD5NB120SZ

ELECTRICAL CHARACTERISTICS (CONTINUED)


Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs Forward Transconductance VCE = 25 V , IC = 5 A 5 S
Cies(*) Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0V 430 pF
Coes(*) Output Capacitance 40 pF
Cres(*) Reverse Transfer 7 pF
Capacitance
Rg Gate Resistance 4 KΩ
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%

Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Delay Time IC = 5 A , VCC = 960 V 690 ns
tr Current Rise Time VGE = 15 V , Rdrive = 1KΩ 170 ns
(di/dt)on Turn-on Current Slope Tj = 25°C 39.6 A/µs
td(on) Dealy Time ICC = 5 A , VCC = 960 V 600 ns
tr Current Rise Time VGE = 15 V , Rdrive = 1KΩ 185 ns
(di/dt)on Turn-on Current Slope Tj = 125°C 39 A/µs

Table 8: Switching Off


Symbol Parameter Test Conditions Min. Typ. Max. Unit
tc Cross-over Time IC = 5 A , VCC = 960 V 4 µs
tr(Voff) Off Voltage Rise Time VGE = 15 V , Rdrive = 1KΩ 2.2 µs
td(off) Delay Time Tj = 25°C 12.1 µs
Current Fall Time 1.13
tf µs
tc Cross-over Time IC = 5 A , VCC = 960 V 5 µs
tr(Voff) Off Voltage Rise Time VGE = 15 V , Rdrive = 1KΩ 2.2 µs
td(off) Delay Time Tj = 125°C 12.1 µs
Current Fall Time 2
tf µs

Table 9: Switching Energy


Symbol Parameterr Test Conditions Min. Typ. Max Unit
Eon (2) Turn-on Switching Losses VCC = 800 V, IC = 3 A 2.59 mJ
Eoff (3) Turn-off Switching Loss RG= 10 Ω, VGE= 15V, Tj= 25°C 9 mJ
Ets Total Switching Loss (see Figure 18) 11.59 mJ

Eon (2) Turn-on Switching Losses VCC = 800 V, IC = 3 A 2.64 mJ


Eoff (3) Turn-off Switching Loss RG= 10 Ω, VGE= 15V, Tj= 125°C 10.2 mJ
Ets Total Switching Loss (see Figure 18) 12.68 mJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2.
(3) Turn-off losses include also the tail of the collector current.

3/13
STGD5NB120SZ-1 - STGD5NB120SZ

Table 10: Functional Test


Symbol Parameterr Test Conditions Min. Typ. Max Unit
Ias Unclamped inductive switching VCC = 50 V, L= 1.8 mH 3.3 A
current Tstart = 25°C, Rdrive = 1KΩ

ICL Latching Current VCLAMP = 960 V, Tj =125°C 10 A


Rdrive = 1KΩ

4/13
STGD5NB120SZ-1 - STGD5NB120SZ

Figure 3: Output Characteristics Figure 6: Transfer Characteristics

Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Tem-


perature

Figure 5: Collector-Emitter On Voltage vs Col- Figure 8: Normalized Gate Threshold vs Tem-


lector Current perature

5/13
STGD5NB120SZ-1 - STGD5NB120SZ

Figure 9: Gate Threshold vs Temperature Figure 12: Breakdown Voltage vs Temperature

Figure 10: Capacitance Variations Figure 13: Gate-Charge vs Gate-Emitter Volt-


age

Figure 11: Switching Losses vs Gate Resis- Figure 14: Switching Losses vs Collector Cur-
tance rent

6/13
STGD5NB120SZ-1 - STGD5NB120SZ

Figure 15: Thermal Impedance Figure 16: Turn-Off SOA

7/13
STGD5NB120SZ-1 - STGD5NB120SZ

Figure 17: Test Circuit for Inductive Load Figure 19: Gate Charge Test Circuit
Switching

Figure 18: Switching Waveforms Figure 20: Diode Recovery Time Waveforms

8/13
STGD5NB120SZ-1 - STGD5NB120SZ

TO-252 (DPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024


D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398

L2 0.8 0.031

L4 0.60 1.00 0.024 0.039


o o o
V2 0 8 0 0o

P032P_B

9/13
STGD5NB120SZ-1 - STGD5NB120SZ

TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H
C
A

A3
C2

A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1
0068771-E

10/13
STGD5NB120SZ-1 - STGD5NB120SZ

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)*

All dimensions
All dimensions are in millimeters are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA


mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY


TAPE MECHANICAL DATA
2500 2500
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641

* on sales type

11/13
STGD5NB120SZ-1 - STGD5NB120SZ

Table 11: Revision History

Date Revision Description of Changes


06-Oct-2003 1 First release
18-Jan-2005 2 Final datasheet

12/13
STGD5NB120SZ-1 - STGD5NB120SZ

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics


All other names are the property of their respective owners

© 2005 STMicroelectronics - All Rights Reserved

STMicroelectronics group of companies


Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

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