STY60NK30Z

N-CHANNEL 300V - 0.033Ω - 60A Max247

Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw

STY60NK30Z 300 V < 0.045 Ω 60 A 450 W
■ TYPICAL RDS(on) = 0.033 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING 3
2
REPEATIBILITY 1

Max247

DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the INTERNAL SCHEMATIC DIAGRAM
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH EFFICIENCY

SWITCHING DC/DC CONVETERS FOR

PLASMA TV’s
■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STY60NK30Z Y60NK30Z Max247 TUBE

February 2004 1/8

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ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 300 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 300 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 60 A
ID Drain Current (continuous) at TC = 100°C 37.5 A
IDM (
) Drain Current (pulsed) 240 A
PTOT Total Dissipation at TC = 25°C 450 W
Derating Factor 3.57 W/°C
VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) 6000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Tj Operating Junction Temperature
-55 to 150 °C
Tstg Storage Temperature
(
) Pulse width limited by safe operating area
(1) ISD ≤60A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.28 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 60 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 0.7 J
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V
Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 300 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 20 V ±10 µA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V
RDS(on) Static Drain-source On VGS = 10V, ID = 30 A 0.033 0.045 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 30 A 29 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 7200 pF
Coss Output Capacitance 1070 pF
Crss Reverse Transfer 250 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 240V 880 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 150 V, ID = 30 A 50 ns
tr Rise Time RG = 4.7Ω , VGS = 10 V 90 ns
(Resistive Load see, Figure 3)
Qg Total Gate Charge VDD = 240 V, ID = 60 A, 220 nC
Qgs Gate-Source Charge VGS = 10 V 46 nC
Qgd Gate-Drain Charge 123 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 150 V, ID = 30 A 150 ns
tf Fall Time RG = 4.7Ω , VGS = 10 V 60 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD = 240 V, ID = 60 A, 40 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 65 ns
tc Cross-over Time (Inductive Load see, Figure 5) 110 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 60 A
ISDM (2) Source-drain Current (pulsed) 240 A
VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 60 A, di/dt = 100 A/µs 475 ns
Qrr Reverse Recovery Charge VR = 100 V, Tj = 150°C 6.4 µC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 27 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.

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Safe Operating Area Thermal Impedance

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STY60NK30Z

Max247 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.70 5.30

A1 2.20 2.60

b 1.00 1.40

b1 2.00 2.40

b2 3.00 3.40

c 0.40 0.80

D 19.70 20.30

e 5.35 5.55

E 15.30 15.90

L 14.20 15.20

L1 3.70 4.30

P025Q

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners

© 2004 STMicroelectronics - All Rights Reserved

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