Electrodeposition
Electrodeposition
1
 2
     Electrodeposition
 3                                                                                                                                      E
 4
     André Avelino Pasa
 5
     Thin Films and Surfaces Group, Departamento de Fı´sica, Universidade Federal de Santa
 6   Catarina, Florianópolis, Santa Catarina, Brazil
 7
 8   Maximiliano Luis Munford
 9   Group of Organic Optoelectronic Devices, Departamento de Fı´sica, Universidade Federal do
10   Paraná, Curitiba, Paraná, Brazil
11
12
13
14
15   INTRODUCTION                                                        interface process mediated by the occurrence of elec-
16                                                                       trochemical reactions that promote the reduction or
17   Most important concepts and techniques of an electro-               the oxidation (redox reactions) of the ionic species.
18   deposition are introduced and described here in an                      An electrochemical cell with a battery is illustrated in
19   easy-to-understand way. Examples of technological                   Fig. 1, where the motion of the ions toward the
20   applications are given, with emphasis on the fabri-                 electrodes is also sketched. In this case, the metallic salt
21   cation of nanostructures.                                           NiSO4 (nickel sulfate) dissolved in water is a practical
22                                                                       example of an electrolyte for Ni-plating metallic objects.
23                                                                       In this example, the object to be plated is a key, placed
24   DEFINITIONS AND HISTORY                                             as the working electrode. By applying an external
25                                                                       voltage with the negative terminal of the battery
26   Electrodeposition is an electrochemical process that                connected to the working electrode, the Ni2þ move to
27   allows the preparation of solid deposits on the surface             this electrode, where deposition takes place, and the
28   of conductive materials. It is a commercially highly                SO42 toward the positively charged counter-electrode.
29   relevant process, providing the basis for many indus-                   An essential characteristic of electrochemical reac-
30   trial applications, such as electro-winning, refining,              tions is that the exchange of charge does not occur
31   and metal plating. Metal plating is the process that                between chemical species, as it does in a typical chemical
32   has perhaps the closest contact with most people’s                  reaction, but between chemical species and the electrode.
33   everyday life, because we are surrounded by things that             The electrochemical reaction that is most important for
34   have a protective or decorative coating, such as                    the electrodeposition process is the one that occurs at
35   watches, buttons, belt buckles, doorknobs, handlebars,              the working electrode; i.e., for the example, in Fig. 1,
36   etc. Additionally and more recently, as will be seen                it is the reduction reaction Ni2þ þ 2e ! Ni0 , where
37   below, not only do the circuit boards and the packaging             the Ni ions are reduced by receiving two electrons (e )
38   modules of computers, but also the recording and                    from the electrode. At the counter-electrode, the oxida-
39   reading heads of their hard disk drives and the micro-              tion of the sulfate radical is too energetic to occur,
40   processor chip itself may have plated material on them.             and the most probable oxidation reaction for inert
41      Electrodeposits are formed by the action of an elec-             electrodes in an aqueous electrolyte is the electrolysis
42   tric current passing in an electrochemical cell, a device           of the water, forming Hþ and O2 through the reaction
43   that consists of two conductive or semi-conducting                  H2 O ! 2Hþ þ 1=2O2 þ 2e . This reaction occurs
44   electrodes immersed in an electrolyte. The electrodes               by donating two electrons to the anode, completing
45   are called the working electrode (cathode), consisting              the electrical circuit and keeping the electric charge
46   of the object where electrodeposition is planned, and               balanced. Frequently used inert electrodes include
47   the counter-electrode (anode), necessary to complete                platinum and glassy carbon. If the counter-electrode
48   the electrical circuit. Electrolytes for electrodeposition          is a metallic bar or foil (a non-inert electrode), the
49   are usually aqueous solutions containing positive and               electrodissolution of the metal could provide electrons
50   negative ions, prepared by dissolving metal salts. The              for the electrode and ions for the solution.
51   electric current that flows between the two conductive                  Historically, the discovery of electrodeposition is
52   electrodes in the presence of an external voltage is                attributed to Luigi V. Brugnatelli, an Italian professor,
53   because of the motion of charged species, via migration             who in 1805 was able to electrodeposit gold on the
54   and diffusion, towards the surfaces of the polarized elec-          surface of a metallic object, from a solution containing
55   trodes. At the surface of the electrodes, the conduction            dissolved gold, using a voltaic pile (battery). About 40
56   mechanism must change from ionic to electronic, an                  years later, John Wright, from Birmingham, England,
     Encyclopedia of Chemical Processing DOI: 10.1081/E-ECHP-120037171
     Copyright # 2006 by Taylor & Francis. All rights reserved.                                                                  821
                                                    120037171_E-ECHP_00_00_R2_081905
          822                                                                                                        Electrodeposition
 1       A                                            B
 2                POTENTIOSTATIC                            PULSED MODE
 3                      MODE                               (Potential / Current)
 4                                                                                          Eb / Ib
          Potential
 5
          Applied
                                               E
 6                                                                                          Ea / Ia  Fig. 3 Illustration of the potential as a AQ1=PR
 7                                                                                                   function of time for potentiostatic and
 8                                          Time                                        Time         pulsed deposition modes.
 9
10
11     simply voltammogram. Fig. 4(A) illustrates a poten-                     deposit that is very homogeneous, apart from a micro-
12     tial ramp applied to the working electrode, and                         scopic defect because of a hydrogen bubble, obtained
13     Fig. 4(B) the corresponding plot for the variation of                   at a deposition potential of 1.1 V. Fig. 5(C) shows a
14     the cathodic current as a function of the cathodic                      plot of the deposition current. This plot, known as a
15     potential. This figure shows a typical polarization                     current transient, gives information about the deposi-
16     curve for the reduction of a metal at a conductive                      tion process and allows the calculation of the elec-
17     electrode. The onset of current, indicated by an                        trodeposited charge from the area below the curve.
18     arrow, corresponds to the minimum cathodic poten-
19     tial at which the reaction occurs (a fundamental value
20     for electrodeposition purposes), the peak corresponds
21     to the maximum current at a given rate of change of                     ELECTRODEPOSITION MECHANISMS
22     potential (also known as the reduction peak), while
23     the third characteristic feature of the plot is the                     Electrodeposited Charge
24     saturation of the current at more negative potentials.
25     The intensity of the reduction peak depends on the                      Because the electrodeposition process involves the
26     potential scan-rate, this peak being not observed, in                   transfer of electrons to an electrode, by measuring
27     many cases, because of other reactions that occur                       the current in the electrochemical cell, it is in principle
28     simultaneously.                                                         possible to calculate the amount of material deposited.
29                                                                             If no other reaction occurs in parallel, then we can
30                                                                             assume that the reaction at the working electrode in
31                                                                             aqueous electrolyte is just the simple reduction of a
32     Potentiostatic Deposition
                                                                               metal (M)
33
34     This   section  will describe    the   pontentiostatic   mode
35     using an electrolyte containing cobalt sulfate. By                      Mnþ þ ne ! M0 ;                                            ð1Þ
36     applying   a potential   ramp   it is possible   to obtain   the
37     polarization curve shown in Fig. 5(A). In this figure                   where a metal ion Mnþ is reduced to a metal atom M0
38     the  onset of Co  reduction   is about    0.8 V.  By selecting         after gaining n electrons. By assuming that all the
39     a deposition potential negative than this value, it is                  metal ions reduced at the surface of the working
40     possible to obtain a deposit. Fig. 5(B) illustrates a Co                electrode stick to this surface, the total amount of
41                                                                             electrodeposited material can easily be calculated from
42                                                                             the charge Q (in coulombs), which represents the
43                                                                             product of the total amount of electrodeposited atoms
44      A                             B                                        N times the charge of n electrons, as given by the
45          E                                                    I             expression
                               Time       Ef                Ei
46                                                                    E
47      Ei                                                                     Q ¼ Nne;                                                    ð2Þ
48
49
50                                                                             where e is the charge of one electron, equal to
51                                                                             1:6  1019 C. The charge Q is calculated from the
   AQ1/                                                                        current   transient. If the deposition current is constant,
52      Ef
   PR                                                                          Q  can  be  calculated by simply multiplying the current I
53
54                                                                             by  the  deposition  time t,
       Fig. 4 Illustration of the applied potential ramp (A) to
55     obtain a typical polarization curve (voltammogram) of metal
56     deposition on a metal working electrode.                                Q ¼ It:                                                     ð3Þ
                                               120037171_E-ECHP_00_00_R2_081905
     Electrodeposition                                                                                                            825
 1
 2
 3                                                                                                                                          E
 4
 5
 6
 7
 8
 9
10
11
12   Fig. 5 (A) Polarization curve of an electrolyte containing cobalt sulfate, (B) scanning electron microscope (SEM) image of a Co     AQ1=PR
13   deposit obtained at 1.1 V, and (C) the corresponding deposition current as a function of time (current transient). The reference
14   electrode was saturated calomel and the working electrode semiconducting silicon. (From Ref.[1].)
15
16
17
     However, if the current is varying during the deposi-                 This calculation gives a deposit thickness in meters
18
     tion, as shown in Fig. 5(C), Q can be calculated by inte-          that has to be converted into more adequate units
19
     grating the current I ¼ IðtÞ as a function of time,                as microns (1 mm ¼ 106 m) or nanometers (1 nm ¼
20
                                                                        109 m). For a precise calculation of the thickness of
21          Z                                                           deposits, it is necessary to take into account possible
22   Q ¼        IðtÞdt:                                        ð4Þ      electrode reactions that occur simultaneously with
23
                                                                        the main reaction. One very common example is the
24
                                                                        hydrogen evolution reaction, 2Hþ þ 2e ! H2 .
25   In order to calculate the thickness h (m) of the deposit           This reaction is so rapid, in conditions such as rela-
26   on a known area A (m2) of the surface of the electrode             tively high cathodic potentials in acidic electrolytes,
27   where deposition occurred, the quantity N can be                   that it dominates the exchange of electrons at the
28   expressed as                                                       surface of the electrode. The contribution of hydrogen
29
                                                                        evolution to the cathodic current must be determined
30           mNa
     N ¼         ;                                             ð5Þ      in order to obtain the efficiency of the plating process.
31            M                                                         This may be done indirectly by measuring the thickness
32
                                                                        of the deposit and calculating the amount of charge
33   where m is the electrodeposited mass (g), Na is                    corresponding to ‘‘missing’’ metal. The presence of
34   Avogadro’s number (the number of atoms in a mole,                  hydrogen during the deposition has several effects on
35   equal to 6:02  1023 ) and M is the atomic weight.                 the metallurgical properties of the deposits. One of
36   Using the density d (g=m3), given by d ¼ m=V,                      these effects is the formation of gas bubbles that mask
37   where the volume V (m3) is given by the product of                 the surface of the electrode locally, introducing
38   the area, and the thickness, V ¼ Ah, Eq. (5) can be                microscopic defects in the electrodeposited layers [see
39   rewritten as                                                       example of this effect in Fig. 5(B)].
40
41
             dAhNa
42   N ¼           ;                                           ð6Þ
43             M                                                        Mass Transport
44
45   and Eq. (2) rewritten as                                           Electrodeposition has the ability to produce a rela-
46                                                                      tively uniform distribution of metal upon a cathode
47           ndAhNa e   ndAhF                                           of irregular shape. Though the uniformity depends
     Q ¼              ¼                                        ð7Þ
48              M         M                                             on the distribution of electric fields inside the electro-
49                                                                      lyte toward the surface of the electrode, other impor-
50   where F is Faraday’s constant, defined as F ¼ Na e,                tant factors have to be considered. The addition of
51   equal to 96,485.34 C. By rearranging Eq. (7) and know-             agents (additives) to the electrolyte, for example, can
52   ing the quantities M, Q, n, d, A and F, the thickness can          affect the microscopic mechanism of electrodeposition,
53   be easily calculated from:                                         reducing the roughness of the deposit and producing a
54                                                                      visual effect known as brightening.
55           MQ                                                            In order to obtain layers with a desired property,
     h ¼         :                                             ð8Þ
56          ndAF                                                        such as uniform thickness and low roughness, or an
                                                                                                                                                120037171_E-ECHP_00_00_R2_081905
     826                                                                                                                                                                                                                                                            Electrodeposition
 1                                                         Helmholtz Layer
     A
 2                                   +
                                         +
                                             +
                                                 +                                  +
                                                                                              +
                                                                                                  +
                                                                                +
 3                                           +                                                                                                                                                          Bulk Solution
                                                     + +
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                               + +
                                                                                                      + +
                                                                          + +
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                                     +                                                                                                                         +        +
                                                 +                              +                                                                          +
 4                                       +   +                                      +         +
                                                                                                  +
                                                                                                                                                                   +
                                                                                                                                                                            + +
                                                                                                                                                     + +
                                             +
                                         +       +
                  ELECTRODE
 5                                   +
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                                                     + +
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                               + +
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 6                                                                                                                        +
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+ +
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                                     +
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                                         +       +
                                             +
                                                                            +                                     +                   +                                                                             +
 7                                   +
                                         +
                                             +
                                                 +                +
                                                                      +             +                                 +       +                                                                                         +    +
                                                                                                                                                                                                                                 +
                                                                                        + +
                                             +              + +
 8
                                                     + +
                               + +
                                     +
                                                                  +
                                                                      +     +
                                                                                    +                                                                              Solvated+ Ion
                                         +       +
 9                                           +
                                                                                                             +
                                                                                                                  +
                                                                                                                          +
                                                                                                                                  +                                               +
                                                                                                                                                                                      +       +
                                             +
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                                                                                                                                                                                                  + +
                                                                                                                                                                            + +
                                         +       +
10                                                                                                                    +
                                                                                                                                      + +
                                     +
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                                                                                                                                                                                  +
                                             +                                                                                                                                                +
                                                     + +
                               + +
                                                                                                             +                                                                        +   +
                                                                                                                  +           +
11                                   +
                                         +   +
                                                 +
                                                                                                                          +
                                                                                                                                                                                      water molecule
12
                                                 Gouy-Chapman Layer
13   B
14
15         ψSolution                                                                                                                              Distance from Electrode
16
17
           Potential
18
19
20
21
22       ψElectrode                                                                                                                                                                                                                         Fig. 6 Illustration of the electric
                                                                                                                                                                                                                                            double layer (A) and potential drop         AQ1=PR
23                                                                                                                                                                                                                                          (B) near the surface of the electrode.
24
25
26   electrolyte with high filling capacity, i.e., with the                                                                                                                                               electrolyte and electrode. An electric double layer,
27   ability to produce deposits inside holes or lith ographic                                                                                                                                            illustrated in Fig. 6, will be formed. Fig. 6(A) shows
28   features, one has to consider carefully the transport of                                                                                                                                             the double layer in greater detail. When the exchange
29   different species inside the electrolyte and the reaction                                                                                                                                            process reaches equilibrium the double layer thickness
30   rates of these species on the surface of the electrode.                                                                                                                                              depends on the physical and chemical properties of the
31      Basically, three mechanisms are responsible for                                                                                                                                                   electrode=electrolyte interface. In general, the descrip-
32   mass transport inside an electrochemical cell: diffusion,                                                                                                                                            tion of the double layer considers the existence of
33   migration, and convection. Diffusion is mass transport                                                                                                                                               two regions named the Helmholtz layer, a monolayer
34   because of concentration gradients, i.e., variations in                                                                                                                                              of ions on the surface of the electrode, and the
35   the concentration of a species with position. Diffusion                                                                                                                                              Gouy-Chapman layer, a region that penetrates the
36   occurs mainly near the electrode surface because of                                                                                                                                                  bulk of the electrolyte with decreasing charge and
37   gradients created by the consumption of species that                                                                                                                                                 concentration gradients. In the figure, the ions are
38   undergo redox reactions and are incorporated into                                                                                                                                                    shown with a sheath of water molecules. This solvation
39   the deposit. This incorporation process depletes the                                                                                                                                                 sheath is because of the electrostatic attraction of polar
40   deposition species near the electrode, generating the                                                                                                                                                water molecules and the ionic species. Fig. 6(B)
41   concentration gradient.                                                                                                                                                                              illustrates the potential drop near the surface of the
42      The simple introduction of an electrode into an                                                                                                                                                   electrode because of the presence of the double layer.
43   electrolyte will lead to an exchange of charge between                                                                                                                                               In the bulk of the electrolyte the potential drop is
44
45
     A                                                                                                                                                                                    B
46
47       Electrode                                                                                                        Bulk Solution
                                             DIFFUSION                                                                                                                                                                      d
48                                           LAYER
49              C
                        Bulk
50                                                                                                                                                                                                                               d'
51
52                                                                                                                                                                                                              C
                                                                                                                                                                                                                        s'                 Fig. 7 (A) Idealized profile of the con-     AQ1=PR
53       C                                                                                                                                                                                                                                 centration gradient near the surface of
54        Surface                                                                                                                                                                                                                          the electrode and (B) an illustration of
55                                                                                                                                                                                                         Cs                              a deposition instability in the presence
                                                                                         d
56                                                                                                                                                                                                                                         of an asperity.
                                                                            120037171_E-ECHP_00_00_R2_081905
     Electrodeposition                                                                                                                                         827
 1          A                                                                                                       B
 2
 3          SOLUTION                                                                                                                                                     E
 4                        +
                               +
                                   +
                      +
 5                            +        + +
                + +
                                             Solvated Ion
 6                    +
                          +    +
                                   +
 7
 8
 9                                     difusion
                                                                                 growing
10
11                        +
                               +
                                   +         electron
                      +                                     difusion over
12                            +              transfer
                                       + +
                + +
                      +
                                                            the surface
                                   +
13                        +    +
 1
 2
 3
 4
 5
 6
 7
 8                                                                                                                                          Fig. 10 (A) Sequence of filling of
 9                                                                                                                                          a trench profile for the fabrication
10                                                                                                                                          of Cu interconnects, (B) a cross-
11                                                                                                                                          section illustration of a six-level
12                                                                                                                                          wiring structure, and (C) SEM
13                                                                                                                                          view of IBM’s first-to-market six
14                                                                                                                                          level copper interconnect technol-
                                                                                                                                            ogy. (From Ref.[2].)
15
16
17
18   fluctuations). Convection can also be produced in a                                                            microscopy (AFM) image of an electrodeposited layer
19   controlled manner by different methods, such as                                                                from an electrolyte containing cobalt sulfate. The
20   mechanically stirring the electrolyte.                                                                         image clearly reveals the formation of Co grains on
21                                                                                                                  top of electrode surface.
22
23   Growth Mechanisms
24                                                                                                                  Electrode Reactions
25   To complete the explanation about the mechanisms of
26   electrodeposition, it is very important to give an idea                                                        The current that flows at the working electrode may
27   about the formation of the deposits. A model for the                                                           be divided into two kinds: faradaic and non-faradaic.
28   electrodeposition process considers a solvated ion going                                                       The faradaic processes are the ones where charges
29   through the diffusion layer as a first step, loosening                                                         are transferred across the liquid–solid interface. These
30   of the solvation sheath by transferring electrons                                                              processes are called faradaic because they follow
31   with electrode and being adsorbed (adatom) as the                                                              Faraday’s law, which says the amount of substance
32   second step, and surface diffusion and incorporation                                                           that undergoes oxidation or reduction at each elec-
33   in an energetically favorable site as the third step.                                                          trode is directly proportional to the amount of electri-
34   The deposition sites can be punctual or extended sur-                                                          city that passes through the cell. Two faradaic
35   face defects, such as vacancies or kinks, known in gen-                                                        processes that are directly related to electrodeposition
36   eral as nucleation sites. The nucleation sites allow the                                                       are shown in Fig. 9, where Fig. 9(A) represents simply
37   formation of nuclei (islands) that evolve to grains,                                                           the deposition of Cu by reduction of Cu2þ and Fig.
38   forming compact deposits that grow on top of the sur-                                                          9(B) the growth of Al anodic oxide by oxidation of
39   face of the electrode. Fig. 8(A) depicts the mechanism                                                         metallic aluminum, this being an example of anodic
40   of layer growth and Fig. 8(B) shows an atomic force                                                            electrodeposition. Non-faradaic processes are struc-
41
42
43
44     A                                                              B
45                  0                                                                 0
46
                                                           Deposition Current (mA)
47
     Current (mA)
                –2                                                                   –2
48                                      Cu2+ + 2e– = Cu°
49
                –4                                                                   –4                                               Fig. 11 (A) Voltammogram of an elec-
50
                                                                                                                                      trolyte containing two salts, Co and Cu       AQ1=PR
51                                                                                                                                    sulfates and (B) pulses corresponding
                –6                                                                   –6
52                                                                                                                                    to the alternate deposition of a Cu=Co
53                                                                                                                                    multilayer. The electrode is semicon-
                –8       Co2+ + 2e– = Cu°                                            –8
54                                                                                                                                    ducting Si. (Courtesy of L. Seligman,
55                      –1.2     –0.6      –0.3    –0.0                                   0    20   40         60        80     100   Universidade     Federal     de   Santa
56                             Potential (VxSCE)                                                         Time (s)                     Catarina).
                                                                        120037171_E-ECHP_00_00_R2_081905
     Electrodeposition                                                                                                                                      829
 1    A                                                             B
 2                  0.6
 3                                                                         8                    Number of                                                             E
                                                                                                 Layers :
 4                  0.4                                                                               9
                                                                           6                         13
 5
     AMR %
                                                                    MR %
                                                                                                     19
 6                                                                         4
                    0.2
 7
                                                                           2
 8
                                                                                                                  Fig. 12 (A) AMR of single layer of Co[1] and     AQ1=PR
 9                  0.0                                                  0                                        (B) GMR results depending on the number of
10                        –240    –120        0       120     240       –1000   –500      0          500   1000   layers. (From Ref.[5].) The substrate is semi-
11                               Applied Field (Oe)                             Applied Field (Oe)                conducting Si.
12
13
14   tural changes of the electrode–solution interface, such                                         ELECTRODEPOSITION IN NANOSCIENCE
15   as absorption and desorption of species that change                                             AND NANOTECHNOLOGY
16   the potential of the electrode and solution composition
17   without charge transfer.                                                                        Simultaneously, with the rapid growth of electrodepo-
18                                                                                                   sition in microelectronics, a new trend based on the
19                                                                                                   electrodeposition of materials, structures, particles,
20   ELECTRODEPOSITION IN MICROELECTRONICS                                                           devices, etc., generally called nano-objects, with
21                                                                                                   dimensions below 100 nm commenced. Nano-objects
22   Recently, there has been a boom in the use of electro-                                          are fundamental for nanoscience investigations and
23   deposition for microelectronics. The microelectronics                                           nanotechnology development. A nano-object is of
24   industry came to the conclusion that the electrodeposi-                                         particular interest if it has physical properties that
25   tion of Cu is the ideal manufacturing process for                                               differ from objects that have macroscopic sizes.
26   wiring for semiconductor logic and memory devices.                                              Quantization of energy, for example, is observed
27   Wiring is the network of wires that interconnects the                                           in systems with greatly reduced size, such as atoms,
28   devices (transistors) on integrated-circuit chips. Cop-                                         molecules, and nanostructures.
29   per is a highly conductive metal and is relatively easy                                             Electrodeposition is an elegant and efficient techni-
30   to electrodeposit. Since 1997, Cu has been successfully                                         que for the production of nano-objects. Using the
31   used for the production of interconnects.[2] Nowadays,                                          pulse deposition mode, it is possible to control the
32   such interconnects are electrodeposited in trenches                                             amount of atoms to be deposited with great precision.
33   with widths of 0.13 mm or less. The ability to fill                                             That is, pulsing with pulse durations of a few millise-
34   trenches and vials with a plated material is called                                             conds to a few seconds, allows the deposition of
35   superfilling and is illustrated in Fig. 10(A). The                                              clusters of atoms or layers with thickness of a few to
36   cross-section of the device illustrated in Fig. 10(B)                                           hundreds of nanometers.
37   depicts the multilevel wiring structure of an integrated                                            A typical example of an electrodeposited nanostruc-
38   circuit and Fig. 10(C) shows a real arrangement of                                              ture is a multilayered structure. By having two salts in
39   electrodeposited interconnects in a device fabricated                                           the electrolyte and applying two potentials in alterna-
40   by IBM.                                                                                         tion, it is possible to deposit multilayer structures,
41
42
43
44   A
45                  –4
46
47                  –5
48
     Current (mA)
 1
 2
 3                   200                                                               200
 4
 5                     0                                                                 0
 6
     Current (mA)
                                                                       Current (mA)
                    –200                                                              –200
 7
 8                                                                                    –400
                    –400
 9                                                                                    –600
10                  –600
                                                                                      –800
11
                    –800                                                                     0.39 0.40 0.41 0.42
12
                                                                                                   Time (s)        Fig. 14 Sequence of ultrafast pulses      AQ1=PR
13                         0.0   0.1     0.2         0.3   0.4   0.5                                               for the deposition of a nanostruc-
14                                        Time (s)                                                                 tured Cu48Ni52 alloy. (From Ref.[10].)
15
16
17   which are artificially fabricated materials that have                                   multilayer. If the individual layers are only a few
18   application in the electronics industry. Fig. 11(A)                                     nanometers thick, which is easily achievable by electro-
19   shows the polarization curve for an electrolyte contain-                                deposition, the electric resistance will vary with the
20   ing two salts, CuSO4 and CoSO4, where the reduction                                     magnetic field, an effect discovered very recently and
21   peaks of each metal are clearly seen. Pulsing the cath-                                 known as giant-magnetoresistance (GMR).[3,4] The
22   odic potential rapidly between a value at which only Cu                                 first observation of a magnetoresistive effect was by
23   is reduced, and one at which a Co-rich alloy is reduced,                                Lord Kelvin in 1857 by measuring the electrical resis-
24   generates a deposit that is a Cu=Co multilayer with                                     tance of magnetic alloys. Nowadays, the effect that
25   individual layers of nanometric thickness. The layer                                    he observed is called anisotropic magnetoresistance
26   thickness may be controlled by integrating the current                                  (AMR), and its magnitude does not exceed 6%.
27   in real time and calculating the electrodeposited charge                                The GMR effect is about one order of magnitude
28   or, more simply, by controlling the deposition time.                                    greater than AMR and depends on many factors, such
29   Fig. 11(B) shows typical current transients with charac-                                as the thickness and number of individual layers, the
30   teristic peaks for each layer electrodeposited. The Co                                  magnetic material used and the preparation method,
31   deposition current is much higher than the Cu one                                       and is observed also in non-layered granular struc-
32   because to assure the deposition of a Co-rich alloy                                     tures. Magnetoresistive materials have been intensively
33   the concentration of Co sulfate in the electrolyte has                                  used in the high-technology industry as magnetic
34   to be much higher than the Cu sulfate concentration.                                    sensors and reading heads for computer hard disk
35       A multilayer structure with one of the repeating                                    drives. Fig. 12(A) shows the magnetoresistance of a
36   layers being a magnetic material is called magnetic                                     single layer of electrodeposited Co, similar to the one
37
38
39
40   A
41                                Pores filled with
42   Nanoporous                   electrodeposited metal
43   Membrane
44
45
46
47
                       Metal Coating
48
49   B
50                     Cu
51
52                                                                                                      Fig. 15 (A) Alumina membrane with nanopores,         AQ1=PR
53                                                                                                      (B) schematic view of a layered nanowire, and
                    Co-Cu-Ni
54                                                                                                      (C) TEM image revealing the layered structure
55                                                                                                      of a Cu=CuCoNi nanowire grown in alumina
56                                                                                                      nanopores. (From Ref.[11].)
                                             120037171_E-ECHP_00_00_R2_081905
     Electrodeposition                                                                                                     831
 1
 2
 3                                                                                                                                E
 4
 5
 6
 7
 8
 9                                                                           Fig. 16 (A) High-resolution AFM image of an
                                                                             atomically flat single crystal of Si showing large
10
                                                                             terraces and parallel steps and (B) nanowires of
11                                                                           Au electrodeposited preferentially at the step
12                                                                           edges. (From Ref.[12].)
13
14
15
16   depicted in Fig. 5, which shows an AMR effect of              per cycle of 0.25 monolayer of Cu and 0.25 monolayer
17   0.5%. Fig. 12(B) illustrates the case of a magnetic mul-      of Ni.
18   tilayer, also electrodeposited, with the effect depending
19   on the number of layers, reaching in this case a
20   maximum of 8.5% for 15 Co=Cu layers.                          Nanowires
21       An interesting achievement of electrodeposition in
22   the preparation of nanostructures is the self-assembly        A special characteristic of electrodeposition is the fact
23   of multilayers.[6] An electrolyte containing copper sul-      the deposition occurs only where there is an electrical
24   fate (CuSO4) and lactic acid (C3H6O3) is a standard           connection to the external circuit. This is a great
25   example because under certain experimental conditions         advantage because it allows the deposition to be area
26   the cell current oscillates spontaneously leading to the      selective. By covering the electrode surface with a pat-
27   growth of a nanometric Cu=Cu2O multilayer. In                 terned insulating layer, electrodeposition will occur
28   Fig. 13(A) the spontaneous oscillations of the deposi-        only on the exposed areas. This makes electrodeposi-
29   tion current are illustrated, though a natural damping        tion an ideal method for growing materials on
30   of the magnitude is observed. However, in stirred             previously determined patterns and also for filling
31   solutions the oscillatory behavior can be maintained          high-aspect ratio templates.
32   for several days.[7] Fig. 13(B) shows a SEM image of             This advantage can be used for growing nanowires
33   filaments of spontaneously grown Cu=Cu2O multi-               (wires with nanometric diameter). Nanoporous mem-
34   layers.[8]                                                    branes that can be fabricated by the anodic oxidation
35       The explanation for the spontaneous formation of          of aluminum are appropriate templates. This process
36   multilayers lies in variations in the pH.[6,7,9] In the       leads to the formation of an alumina layer with parallel
37   growth process, the electrodeposition of Cu2O is              nanopores, as shown in Fig. 15(A), which can then
38   favored, as it has an equilibrium potential more positive     be filled by electrodeposition. Fig. 15(B) shows a
39   than that of Cu deposition (Table 1). However, the            schematic view of a multilayer nanowire and Fig.15(C)
40   reaction 2Cu2þ þ 2e þ 2OH $ Cu2 O þ H2 O                    a transmission electron microscopy image of a Cu=
41   depletes the OH species near the electrode, locally          CuCoNi layered nanowire grown in the nanopores.
42   decreasing the pH and favoring the deposition of Cu.             A different way to electrodeposit nanowires is by
43   The above process is repeated, because the OH con-           using the surface of a single crystal as a template.
44   centration is re-established during Cu2þ reduction.           Fig. 16(A) shows an AFM image of a silicon surface,
45       Additionally, by having an experimental setup with        revealing large terraces with parallel steps. By electro-
46   a high-speed data acquisition system, it is possible to       depositing Au at relatively low deposition rates, the
47   control deposition pulses with durations below millise-       steps act as deposition sites favoring the formation of
48   conds. This ultrafast pulsing method was called               wires of nanometric size along their edges, as shown
49   precision electrodeposition and allowed the deposition        in Fig. 16(B).
50   of sub-monolayer quantities of material.[10] Precision
51   electrodeposition was demonstrated for the CuNi
52   system, as shown in Fig. 14, where a sequence of
53   ultrafast current pulses for the electrodeposition of a       CONCLUSIONS
54   nanostructured CuNi alloy with a controlled composi-
55   tion of 48% Cu and 52% Ni is displayed. The duration          Electrodeposition is a process widely used in industry.
56   of the pulses (tens of milliseconds), allows the deposition   In this entry, emphasis was given to fundamental
                                           120037171_E-ECHP_00_00_R2_081905
     832                                                                                                   Electrodeposition
 1   aspects and to future potential applications of this             cuprous oxide layered nanostructures. J. Mater.
 2   technique.                                                       Res. 1998, 13 (4), 909–916.
 3                                                               7.   Switzer, J.A.; Hung, C.-J.; Huang, L.-Y.; Switzer,
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 5   ACKNOWLEDGMENT                                                   E.W. Electrochemical self-assembly of copper=
 6                                                                    cuprous oxide layered nanostructures. J. Am.
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10   FAPESC.                                                          Nanostructured copper filaments in electroche-
11                                                                    mical deposition. Phys. Rev. Lett. 2001, 86, 3827–
12                                                                    3830.
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34       valves electrodeposited on Si. J. Magn. Magn.
35       Mater. 2001, 226, 752–753.                             Brad, A.J.; Faulkner, L.R. Electrochemical Methods:
36    6. Switzer, J.A.; Hung, C.J.; Huang, L.Y.; Miller,          Fundamentals and Applications; Wiley: New York,
37       F.S.; Zhou, Y.C.; Raub, E.R.; Shumsky, M.G.;             1980.
38       Bohannan, E.W. Potential oscillations during           Schlesinger, M., Paunovic, M., Eds.; Modern
39       the electrochemical self-assembly of copper              Electroplating, 4th Ed.; Wiley: New York, 2000.
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