Acoustic Wave Device Design Guide
Acoustic Wave Device Design Guide
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AN INTROCqXYION TO TIE DCSI6N OF SIaFACE ACOUSTIC WAVE DEVICES. (U)
APR 78 P 000SON
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DEPARTMENT OF DEFEN C E
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R. DOBSON
Commonwealth of Ausrr~~e
COPY No. APRIL 197
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DEPARTMENT OF DEFEN CE
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AN INTRODUCTION TO THE DESIGN OF SURFACE
!__— ACOUSTIC WAV ~~DEVICES,
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S U M M A R Y
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Number: AR 00 1477 ~~~~~~~t:
Other c. Summary in
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3 [TITLE
AN INTRODU CTION TO THE DESIGN OF SURFACE
ACOUSTIC WAVE DEVICES
6.2 NUMBER OF 69
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No l i m i t a t i o n .
SUMMARY OR ABSTRACT :
(if this is security classified,the announcement of this report will be similarly classified)
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TAB LE OF CONTENTS
Page No.
1. INTRODUCT ION 1
4. PRACTICAL CONSIDERATION S 11 - 26
4.1 Substrate attenuation ii
4.2 Air loading attenuation 12
4.3 Energy coupling attenuation 12
• 4.4 Transducer coupling losses 12 - 13
4.5 Electro-acoustic regeneration 13 15
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-
5. TRANSDUCER ANALYSIS 27 - 41
5.1 Equivalent circuit models 28 - 34
5.2 Electrical matching network 35 37
5.3 Transducer scattering parameters 37 - 40
5.4 Transducer electrode capacitance 41
Page No.
6. TRANSDUCER DESIGN 41 - 46
6.1 The undirectional transducer 42
6.2 The laultistrip coupler 42 43 -
7. PRACTICAL RESULTS 46 - 49
7.1 Phase coded sequence generator/correlator 46 - 48
7.2 150 )‘*lz bandpass filter 49
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8. CONCLUSIONS 50
9. ACKNOWLEDGEMENT 50
REFERENCES
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LIST OF FIGURES
Page No.
Page No.
53. Phase velocity and propagation loss for aluminium and gold 46
films on YX quartz
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1. INTRODUCTION
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is known as apodization .
As distance along the surface corresponds to time, then the phase of a
signal may be varied by varying the position of the transducers. Thus
the interdigital transducer allows precise control of frequency, phase and
amplitude of signals on a surface wave delay line, or equivalently there
is a unique correspondence between the metallization pattern of the trans-
ducers and the device ’s response to an impulse of electrical energy.
• Interdigital transducers for the frequency range up to several hundred
megahertz may be produced using standard photolithographic processing
techniques used in the production of microelectronic circuits. Transducers
covering the range up to low microwave frequencies may be manufactured by a
more elaborate process using electron beam etching and laser interferometer
positioning techniques.
The principles of operation of a few of the more common surface wave devices
will be discussed.
3.1 Chirp matched f i l t er
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It will now be shown how a surface acoustic wave correlator may be used to
overcome these shortcomings. Consider the case of code generation. In
figure 7 the transducers at either end of the substrate consist of N
finger pairs with a periodicity corresponding to the desired RF carrier.
If the transducer on the left has an electrical impulse applied to it then
a train of N cycles of sine wave will be set up which will then propagate
under the centre phase coded transducer. As these N cycles pass under
• each tap of the centre transducer then N cycles of sine wave will appear
at the output, the phase of which will be determined by the phase coding
of each tap. As the last cycle of sine wave finishes passing under one
tap, the first cycle will start passing under the next tap and so a
continuous stream of phase coded sine wave at the RF carrier will be
produced until the wave train passes under the last tap.
A device identical to that used for generating the phase coded sequence
may be used to correlate the sequence. Consider the phase coded sequence
generated above being applied to the transducer on the right of figure 7.
This sequence will propagate under the phase coded taps and at one point
only will the phase coding of the sequence correspond to the phase coding
of the taps and produce a correlation peak ; at all other times the
contributions of the phase coded taps will tend to cancel each other out.
The amplitude of the correlation peak is proportional to the number of
taps.
3.3 SAW bandpass filters
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at one frequency only are also discussed on figure 9.
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Figure 10. SAW resonator oscillator
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Another type of SAW osc illator which has been developed more recently
is the ~‘esonator controlled oscillator shown in figure 10. This
oscilla~.or relies on reflections from periodic discontinuities placed at
half wavelength spacings to create a resonant structure.
SAW oscillators using ST cut quartz substrates have a stability which
is considerably better than the common inductor-capacitor (LC) oscillator,
but is not as good as the crystal controlled oscillator. SAW oscillators
do not rely on harmonic operation as do some crys tal osc illators and,
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It has a transducer at each end and detector electrode plates on the top
and bottom in the centre of the substrate . The SAW convolver is unusua l
in that it relies on elastic nonlinearities , which become evident when the
device is operated at abnormally hi gh power levels , to generate produc t
terms. The convolution of two signals
f (t) * g Ct) =
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The ideal surface acoustic wave may be thought of as a parallel wave the
width of the launching transducer travelling unattenuated down the length of
the substrate, with the conversion of e lectr ica l energy to acous tic energy and
back again being one hundred percent efficient. The deficiencies of practical
devices will now be discussed .
4.1 Substrate attenuation
The attenuation of a surface acoustic wave due to the substrate
material has been found to be approximately proportional to the square of
the operating frequency 1 501 . Both magnitude and frequency dependence of
the at t enuation are important parameters to be considered when high
percentage bandwidth filters are being designed . Curves of attenuation
against frequency for Quartz , Lithium Niobate and Bismuth Germanium Oxide ,
the most common surface wave substrates, are illustrated in figure 13.
Note that Quartz has more than twice the attenuation per given delay than (
has Lithium Niobate. (Both have delay times of approximately 3 Ps/cm.)
For devices designed to operate in the lower VHF region, the attenuation
will be negligible except where very long time delays are being considered.
ATTENUATION IN VACUUM
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Figure 15. The unidirectional transducer
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whi ch then becomes a new surface acoustic wave propagating hidirectionally -
from the transducer. This effect occurs in both the launch and receive
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transducers. The wave which is relaunched in the opposite direction to
the incident wave is called the reflected wave.
Consider the case of a wave which is incident on an ideally terminated •
bidirectional receive transducer. Only one half of the incident wave
energy will be absorbed, the other half will be relaunched bidirectionally
(see figure 16).
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F igure 18. Impulse responses of a phas e coded transduce r
w ithout (top) and with (bottom) dummy filling
electrodes 142 1
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field. This has the disadvantage of severely attenuating the received
signal; however , in many cases th is may be en t irely accep table.
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Figure 19.
metallised.
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Curves of surface wave velocity and An/voo versus plate norma l
direction for Lithiwi Niobate are illustrated in figures 25 and 26.
These curves will give the designer some idea as to the tolerance to
spec ify for the substrate crystal orientation for a given device.
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TRANSDUCER SEPARATION
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Figure 28. Diffraction loss versus scaled transducer
separation 1 511
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Diffraction loss is illustrated in figure 28 which is a universal
diffraction loss curve for all parabolic materials (materials for
which velocities near the pure mode axes can be approximated by
parabolas). The use of these curves for the known non-parabolic
surface wave substrates leads to only slight errors. The near
field diffracti~n loss never exceeds 1.6db (the near field being
defined as a < L 2/ 11 + a#/aol). The far f ield diffrac tion loss
may be expressed as:
Far Field Diffraction Loss (db) = -10 log1o- X -l.6/x2
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In the past, bulk wave generation has been a major problem in the
implemen tation of h ighly dispersive filters . La Rose and Vas ile , L 441 ,
have demonstrated a method of bulk wave cancellation using a launch
transducer which is split in two (figure 31); the two halves being phased
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so that bulk waves generated by each half cancel , whilst the two surface
waves generated by these transducers are phased up by placing a slowing
device in the path of one half of the aperture . A thin metal coat ing is - -
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Figure 31. Transducer geometry for bulk wave cancellation 1 441
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5. TRANSDUCER ANALYSIS
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Surface acoustic wave transducer network models are based on the Mason
three port bulk wave circuit model shown in figure 33. Although this
circuit model was originally derived for bulk wave transducers having one
electrical and two acoustic ports, a cascade of Mason equivalent circuits
may be used to represent a surface wave transducer which has one
electrical and many acoustic ports. Smith et. al. 1 681 , have proposed
two diff eren t t ran sducer circuit models based on two different electric
field approximations; the ‘crossed field ’ model which assumes the
dominant electric field is norma l to the surface of the substrate and the
‘i n l ine field’ model which assumes the dominant electric field is along
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Figure 34. ‘C rossed field ’ and ‘in line field ’
to actua l transducer electric field
researchers as to which is the
There is some disagreement amongst various Holland and
circumstances.
correct circuit model to use under which model should be used for
Claiborne 1 21, conclude that the ‘crossed field ’
coupling coefficient) with a large
Lithium Niobate (hig h electro-ulechaflical
should be used for Quartz (low
number of f inger s and the ‘in line ’ model small number of fingers.
electro-mechaflical coupling coefficient) with a , shown in figure 35
irical results
Smith et. al. (681 , have published emp model for Lithium Niobate.
which support the use of the ‘crossed field’
(b)
h theoretical
Figure 35. A comparison of emp ir ical resul ts w it (671
model
values from the ‘crossed field’
~~~~~~~~~~~~~~~~~~ ~
-- _ _
AEL-000I-TR - 30 -
Milsom and Redwood (651 , have proposed a model intermediate between the
‘crossed field’ and the ‘in line field’ models and claim that this model
best suits the particular polarised ceramic PZT4. Bristol 1 551 , is quite
adamant that the ‘crossed field’ model is the only model to be used and
claims tha t the use of any other model will result in significant er ors .
In support o f h i s cl a im , Bristol gives results of a comparison of the
‘in l ine field ’ model , the ‘crossed field ’ model and a model consisting of
50% of each of these models , with experimentally determined results , the
scattering parameter P11 being the critical parameter see figure 36. -
Further support for the ‘crossed field ’ model is given by Hartmann et. al .
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Ra ( .. ..(12)
Xa (‘~3) = Ra (~3 o) (sin 2x - 2x)/2x2 ....(13)
Ra ((
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where x = N~ (‘ - w o)/c~ o
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C1. = N.Cs total transducer capacitance
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This indicates that the material with the highest coupling coefficien t
w i l l have the maximum fractional bandwidth under minimum insertion loss
conditions.
To a first order approximation , the overall bandshape of a surface
wave device may be considered as the product of the electrical bandshape
and the transducer acoustic bandshape, the transducer acoustic bandshape
being determined by taking the inverse Fourier transform of the electrode
pattern. This implies that the overall bandshape is determined by the
smaller bandshape of the two and also that , for maximum bandwidth under
• minimum insertion loss conditions, the transducer electrical Q should
equal the transducer acoustic radiation Q.
Consider the case of an unapodized transducer consisting of N periodic
• sectio n s , of X = V/f,, each, as in figure 43.
k NX — .4
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N periods of f,, = N x t -
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Inverse Fourier transform
of impulse response —
frequency response of
• transducer
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N
Note: fractional bandwidth between units = 2/N
Q~~ N
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-— - - -- - -~~~ - T- - - - -
M~L-0O0I-TR - 36 - ~~~
No w T =
N.t = N/f,, = N X/V
where t is the period corresponding to a frequency fo
V is surface wave velocity
N2 = ir/4k2 .. ..(20)
Smith ( 691 has shown this condition also to be the condition for minimum
phase dispersion and has determined the optimum transducer design , based
on (20), for various substrates. These appear in Table 2.
(
electric Voo T.~ --
Aperture ~ ‘° ~
Note that transducers with wider bandwidths than those given in Table 2
may be readil y obtained , although the electrical circuit Q must be damped ,
sometimes severel y, to obtain the desired bandwidth. Output tran sducers
may be loaded to reduce electrode reflections and also to reduce energy
coupl ing and hence signal droop in long transducers. Figure 44 illustrates
the minimum achievable insertion loss versus fractional bandwidth for
various substrates.
L -
~~~~~~~~~~~~~~ — — ---- -
-
—.- ---- - --
- - -
~~~
- -— - - ______
- 37 -
AEL-000l-TR
1 1 T lT 1 r i
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i i ititul 1 1 tu tu
F,actvjna
~
kndra h ‘P rcenft
R0 I 2
‘ ‘‘
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
~
2E j nc E G
~~~~~
TRANSDUCER ~~ R 0
~~~~~ j 2
Z~
_ F—
~~
Figure 45. Scattering parameter model (671
-- —- - —- - - — ~~~~ - - - --
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ -.-
—— -.
— ~~~~~ —
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-- —
M1.-000 I-T R - 3$ -
From t ransducer symmetry and reciporcity I’ll = I~22 , I~l3 I’23, I’ij = Pij. =
1 + (N5/2) 2 ,2 N6 Yi ....(2l)
P11 -
9 —
~~
D (N& , ? ) -:
—
121 2
P21
N& , ‘ )
—
D ( ....(22)
~
A
2Y
P31 =
D (N& , V) .. ..(23)
f-fo
• where 6 ~~2ir
~~~fo ~
= real part of
A
Yi - imaginary part of Y
2 normalised electric port load
= + J ‘ CT
~ ....(24)
Ga (4/ir).k2 ~
- ‘o Cs N
2
P1 1 = - •...(25)
1~~ ~z
P21 — ~~~ 3 ....(26)
1 -
-
P31=0 ....(27)
where a — (X
L
- ) /Ra ‘in line field model’
~~~~ T
a - oC ) /Ga ‘crossed field model’
+
~~ t
X load reactance
L
—
1 P11
(1 ~ b) ’ ....(28)
-
....(29)
~~~~~~~~~~~~~~~~~~~~~~~~~ _ _ _ _ _ _ _ _ _ _ _ _ _ _
-
- 39 - AE L - 000I - TR
P31 =
2b
.- ~~~~~ (30
where b = R / a ‘in l ine field model’ H
L~
b = G / a ‘crossed field model’
L~
= load resistance
= load conductance
Note that the simplified expressions of Smith ét. al. are in good agreement
with the more complex expressions of Gerard except for Lii and even this is
in good agreement over the range b = 0.5 to 2.0 and a = -2 to +2.
Figure 46 illustrates reflection loss and transmission loss versus
normalised electrical susceptance compared with Gerard ’s model and the
model of Smith et. al.
It -r
~~. ~
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NORMALIZED SUSCEPTANCE . (B , ’
(
a)
55 68
•
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~~~~~
~~ — THEORY
•,* EXPERIMENT
2-
I I I I
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2 4 6 S ~~
NORMALIZED SUSCEPTANCE , 16L. C-r)I’4.
~~~~ %
(b)
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AEL-0001-TR - 40 -
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(a)
20
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.,& ,e EXPER IMENT
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(b)
- 41 - AEL-0001-TR
Only the single interface structure , the most common struc ture, will be
considered here. This is defined as a ‘transducer deposited on the free
surface of an infinitely deep substrate with alternate fingers driven in
• opposite phase’.
If it can be assumed that the transducer finger structure extends
i n f i n i t e l y in both direction s along the substrate surface and that the
finger width is much greater than its thickness , then the capacitance of
a single electrode pair may be expressed as:
6. TRANSDUCER DESIGN
As surface acoustic wave devices are essentially tapped delay lines, all
device specifications must ultimately be transformed into the time domain. - -
Simple delay lines and phase coded correlators are already time domain problems
and are readily handled in the time domain. Filters having a certain desired
band shape in the frequency domain , however, must have their response
transformed into the time domain. - -
h (t) =
~~ 1:H(9 ju’t) d*~d
exp (
AEL-0001-TR - 42 -
0
IIS~~~~
.dvcs,
M.,U •tflpe
TricS A
—
—
Su~s~rs~s
I
— ----.----‘
-— - ~ -— ~ ~ —- -
- 43 AI~L-0O0i-TR
then the other transducer must be unapodized . This is because the wave
front of an apodized transducer is not uniform in amplitude. A
multistrip coupler placed between the launch and receive transducer, now
on different tracks, will average the wave front from the launch
transducer causing a uniform wave front on the second transducer and allow —
both input and output transducers to be apodized. This means that for the
case where the input and output transducers are identical , the frequency
response will be the square of the Fourier transform of the impulse
response of a single transducer. This will have the effect of doubling
(in db) the stopband rejection and doubling the skirt steepness but not
significantly changing the insertion loss. Also as the multistrip -
• coupler causes the surface wave to change tracks but not so the bulk wave,
-
then the bulk wave from the launch transducer will miss the receive
transducer and thereby eliminate its purious response. See Tancrell,
( 24] , and Deacon et. al. 1 191 . The optimum length of a multistrip
coupler is proportional to the inverse of the electro-mechanical
coupling coefficient . Multistrip couplers on Lithium Niobate are quite
small and efficient due to that material ’s high electro-mechanical
coupling coefficient . Unfortunately, quartz has such a low electro-
mechanical coupling coefficient that multistrip coupler lengths are
impractical. The design and application s of multistrip couplers are
discussed to some length by Marshall et. al. (631 and (641 .
6.3 Transducer stripe to gap ratio
Transducer stripe to gap ratio determines the electric field
distribution in the surface wave substrate and hence the degree of
excitation of the fundamental and harmonic surface waves. It also
determines the degree of reflection caused by the metal electrodes short
• cirtuiting the electric field , see figure 17. An analysis of the
excitation of surface waves at harmonics of the transducer fundamental
frequency for the conventional and split finger transducer configurations
has been carried out by Smith (661 . Results for the conventional single
finger geometry are illustrated in figure 49 where surface wave excitation
as a function of metallization ratio is shown for harmonics up to the I -
eleventh. Similar results are given for the split finger geometry in
figure 50.
1.20
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
~ ,‘
~, M= 1 (FUNDAMENTAL )
g~~~~O.8O /
M
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~ 0.20
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~~ 0.60 0.80
~~~~~~~~~~~~~~~~~~ ~~~~~~~~~~ ’
1.0
STR I PE TO SPACING RATIO (fl)
____________________________________________ — — -— - — - — —
— — -~~~~ — -~~ — --~~— ~ ~~~~~~~ -
I ~I~ I.~~~ —~~ --- -- --- - . — - — _ _ _ _ Ig•—----_-_- - - ~~~~~~~~~~~~ .
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AEL-000l-TR - 44
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2
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
~~~~~~~~~~~~~
0. 4 \
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a / /
1...
0.2
/
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I ~~~~~~ _. £ • £
0 ~~~~ ~~~ ~~~~~
0 0 . 2 0 . 4 0 . 6 0 .8 1 .0
STRIPE TO SPAC ING RATIO (fl)
2 00C
I~J
0.
-
-—
i— 1 000 _ _ _ _ _ _ _ _ _ _ _ _
— _ _ _ _ _ _ _
—
~~~~~~~-
.
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~~~~~~~~
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800 — — — ~~~~~~~~~~~~~~~~~~~
— —
—
LI TH IUM __
A
_ _ _ _ _ _ _
NIOBATE
— QUARTZ ~~~~~~~~~~~ — —
20C
1 2 4 6 8 10 20 40 60 100
ElECTRODE SEPARATION (MICRONS)
L ~~~~~~~~~~~~~~~~
_
~~~~~~~~~~~~~~~~~~~~~~~~~~~
— - — — _ _
- 45 - AEL-000l-TR
-2O~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
•
10 100 1000
(a)
-
—2S I
\ I I I ~~~
I • I I I ~
10 100 w 1000
(b)
Figure 52. Electrode efficiency in decibels as a function
of aperture [ 431
‘ - - rn r r. Ir H I ft T 1 ~~~~~ f i j [ f l i - -
. -
--
-
-
-
-:
.
.
-
Al~L-uoo1-rR
-
- 4 , -
~
-
Values of attenuation (~lb/cm) may be linearly interpolated for
frequencies other than those shown .
F
- -
- VOQUANt1 1
- -- ~~~~~~~~~~~~~
- ~
-
- 1
~~
r~~~~~
~~~~~~~
oot u
I
I
-
F / ALUMI ~dU0
I
r—-—PN0,auAtmw
I 104 M•4.I
—4— ------ —- - — - - I
I /-k !
004
v~~~~ o~~
_ _ _ _
I:i gurc 53. Phase velocity and propagation loss for alum inium
and gold films on YX quartz (391 (4~ 1
Pouliquen and Vaesken also give results of metal fil m resistance as a
function of film thickness. They conclude that metal films below about
500 to 600 are not mechan~ ca1ly continuous , consisting of small islands
of atoms. Below about SO A , these islands do not touch and the
electrical resistance of the ~ ilm is infinite. ~\s the metal film
thickness increases about 50 A , the small islands of metal atoms begin to
contact one another and the resistance falls rapidly until at about 500
to 600 the film becomes mechanically continuous . Aluminium has been
R
used extensively as the transducer electrode metal because of its low mass
density and high conductivity. Unfortunately, Aluminium has a great
chemical affinity with ox y g en and cannot be deposited I n thicknesses of
less than a few thousand Angstrom units X ithout quickly oxidis ing . If
ve ry t h i n metal electrodes (500 to 1000 A) are d e s i r e d , then (~old may be
used as t~o electrode materi al. c,old usually requires a keying layer of
about 50 A of Chromium to be deposited on the substrate to aid bonding .
7. PRACTICAL RESULTS
Several SAW devices have been des igned and fabrtcated at the Defence
Research Centre Salisbury, using the princ i ples discussed in this paper. At
this stage there is Insu fficient time to inc lude a complete analysis of any
part icular device ; however brief results from two of the devices will ho
given here.
7.1 Phase coded sequence generator/corrolator
Th,0 first devices fabricated wore a pair of phase coded sequence
generator/correlators similar to the one discussed In paragraph 3.2.
They have a centre frequency of 70 Phi and a chip or phase reversal
rate of 10 1h z with 127 phase coded taps . The dovicos w r e fabricated
-- .- --
_
- 47 - AEL-000l-TR
A.1 s
~L
L1& - A
~~~~ ~~~~
~~ _~~~~ II ~~~~~~~~~~~~~~~~~
2 u s/div
50 n s/ d i v —
k . _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
-
--
- .-~
_
_ _____
___
- _ _ _ _
- -
AEL-000l-TR - 48 -
Figures 56 and 57 show the results when the second device is used to
correlate the waveform of the first device. Figure 56 shows the
correlation peaks standing out clearly from the cross correlation noise.
Figure 57 is an expansion of t h e cross c o r r e l a t i o n peak showing the
almost ideal triangular shape . The cross correlation noise is
considerably worse than predicted from theory ; this is caused largely
by the two devices being made at separate t imes with separate
photographic masters , resulting in slig htly different centre frequencies.
1-’
=~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
50 ns/ div
- I
‘- S
-
Act u t 0i04
10
20
.030
40
- 50
-
-
9. ACKNOWLEDGEMENT
I
F- --- -- -.- ----—.-----— - -—-- - - - ---- — — -- ----.- ‘-—------ --- ---- -- —
- 51 - AEL-0001-TR
~~~~~~~
REFEREN CES
General Overviews
1 Farnell , G.W. and Adler, E.L. “An Overview of Acoustic Surface
Wav e Technology ” Dept . of
Electrical Engineering, McGill
University. Final Report to
Comunications Research Centre
on DSS Contract 36001-3-4406,
August 1974.
SAW Fundamentals
-
S White , R .M. “Surface Elastic Waves ”
Proc. IEEE , Vol. 58 , No. 8,
August 1970. -
-
Chirp Filters
AEL-0001-TR - 52 -
January 1972.
12 Tancrell, R.H. and Holland , M.G. “Acoustic Surface Wave Filters” ,
Proc . IEEE , Vol. 59, No. 3,
March 1971.
- 53 - AEL-0001-TR
28 Davies, L.W. and Lawrence, M.W. “Prospects for Surface Elastic Wave
Crystal-controlled Delay Line
Oscilla tors ”, Proc. I.R.E.E.
Aus tralia , February 1971.
-_ S - --Sfl - — —
~~~~~~~~~~~~~~~~~~~~~~~~ ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
AEL-000l-TR - 54 -
Synthesisers
Convolvers
34 Luukkala , M., and Kino , G.S. “Convolution and Time Invers ion
using Parametric Interaction s of
Acoustic -Surface-Waves. Applied
Physics Letters , Vol. 18, No. 9,
1st May 1971.
a Surface-Wave Convolver”.
Elec t ronics Letters 14th December -
~
’
- ss -
AFL-OOOi Th
~~~~~~ W ~~~
— - — - -- ~~~~~~~~~~~~~~~~~~~
~~~~~~~~~~~~~~~~~~ - —
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
_ _ _ _
AEL-000l-TR - 56 -
-
-
September 1970 .
-
50 Slobodnik, A.J. “A Review of Material Trade-Offs H
in the Desi gn of Aco u sti c Sur fac e
Wave Devices at VHF and Microwav e
Frequencies”. IEEE Trans. Sonics
and Ultrasonics. Vol. SU-20, No. 4,
October 1973.
Transducer Analysis
_ U
- 57 - AEL-000l-TR
là I -
F -—
--- — -
-
-
~~~~~~~~~~~~
r ~~~ ~~~~~~~~~~
AEL-0001-TR - 58 -
Ii -
I
-
Li
—_ _ _ _ _ _ _ _ _
~
AEL- (WOt -TR
In Australia
Chief Defence Scientist 3
Army Scientific Adviser 4
Navy Scientific Adviser 5
Air Force Scientific Adviser 6
Executive Controller (Australian Defence Scientific Service) 7
Superintendent (Defence Science Administration ) 8
Defence Information Services Branch (for microfilming) 9
Defence Information Services Branch for:
United Kingdom, Ministry of Defence, 10
Defence Research Information Centre (DRIC)
United States, Department of Defense, 11 - 22
Canada, Department of National Defence ,
Defence Science Information Service 23
New Zeal and , Department of Defence 24
Australian National Library (Through STIB) 25
Defence Library, Campbell Park 26
Library, Aeronautical Research Laboratories 27
Library, Materials Research Laboratories 28
Director, Joint Intelligence Organisation (DDSTI) 29
WI T
h I N DRCS
Chairman , Defence Research Centre Salisbury Management Committee 30
Chief Superintendent, Advanced Engineering Laboratory 31
Superintendent, Conmiunications and Electronic Engineering 32
Division
Superintendent, Workshops and Mechanical Design Division 33
Superintendent, Systems Analysis Division 34
Superintendent , Electronics Division 35
Superintendent, Weapon Systems Division 36
Senior Principa l Research Scientist, Electronic Warfare 37
Senior Principal Research Scientist, Radar Technology 38
-
-
—
— ~~~~~ -c ~~~~~~~~ —
AEL-000l-TR
Copy No.
Principal Engineer , Communications 39
Principal Officer , Communications Technology Group 40
Principal Officer , Radar and Electronic Tracking Group 41
Principal Officer, Radio Group 42
Principal Officer, Electronic Warfare Development Group 43
Principal Officer, Micro-Engineering Group 44
Principal Officer, Tropospheric Studies Group 45
-
-
Principal Officer , Systems Development Group 46
Principal Officer , Ionospheric Studies Group 47
-. -
-
Principal Officer , Tracking and Command Systems Group 48
Principal Officer, Telecommunications Engineering Group 49
Dr A.S. Burgess, Underwater Detection Group 50
Mr D. Neal , Micro-Engineering Group 51
Author 52 - 53
DOC Section CEE Division Headquarters -
54
Library 55 - 56
Spores 57 - 62
i—i
r.
~
-~~~~~~~~~~ - --