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2N3905 & 2N3906 PNP Transistor Specs

This document provides specifications for 2N3905 and 2N3906 silicon PNP transistors. It lists maximum ratings, electrical characteristics including DC parameters, small-signal parameters, switching characteristics and package dimensions for the transistors.

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0% found this document useful (0 votes)
41 views3 pages

2N3905 & 2N3906 PNP Transistor Specs

This document provides specifications for 2N3905 and 2N3906 silicon PNP transistors. It lists maximum ratings, electrical characteristics including DC parameters, small-signal parameters, switching characteristics and package dimensions for the transistors.

Uploaded by

Ant 1
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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2N3905 & 2N3906

Silicon PNP Transistor


General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C
Total Device Dissipation (TA = +605C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction to Case, R thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, R thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 105 A, IE = 0 40 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 105 A, IC = 0 5 − − V
Collector Cutoff Current ICEX VCE = 30V, VEB = 3V − − 50 nA
Base Cutoff Current IBL VCE = 30V, VEB = 3V − − 50 nA
ON Characteristics (Note 1)
DC Current Gain hFE
2N3905 VCE = 1V, IC = 0.1mA 30 − −
2N3906 60 − −
2N3905 VCE = 1V, IC = 1mA 40 − −
2N3906 80 − −
2N3905 VCE = 1V, IC = 10mA 50 − 150
2N3906 100 − 300
2N3905 VCE = 1V, IC = 50mA 30 − −
2N3906 60 − −
2N3905 VCE = 1V, IC = 100mA 15 − −
2N3906 30 − −
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.

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Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.25 V
IC = 50mA, IB = 5mA − − 0.4 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA 0.65 − 0.85 V
IC = 50mA, IB = 5mA − − 0.95 V
Small−Signal Characteristics
Current Gain−Bandwidth Product fT
2N3905 IC = 10mA, VCE = 20V, f = 100MHz 200 − − MHz
2N3906 250 − − MHz
Output Capacitance Cobo VCB = 5V, IE = 0, f = 1MHz − − 4.5 pF
Input Capacitance Cibo VCB = 0.5V, IC = 0, f = 100kHz − − 10.0 pF
Input Impedance hie
2N3905 IC = 1mA, VCE = 10V, f = 1kHz 0.5 − 8.0 k3
2N3906 2.0 − 12 k3
Voltage Feedback Ratio hre
2N3905 IC = 1mA, VCE = 10V, f = 1kHz 0.1 − 5.0 x 10−4
2N3906 0.1 − 10 x 10−4
Small−Signal Current Gain hfe −
2N3905 IC = 1mA, VCE = 10V, f = 1kHz 50 200
2N3906 100 − 400
Output Admittance hoe
2N3905 IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 40 5 mhos
2N3906 3.0 − 60 5 mhos
Noise Figure NF IC = 1005 A, VCE = 5V, RS = 1k3 ,
2N3905 f = 10Hz to 15.7kHz − − 5.0 db
2N3906 − − 4.0 db
Switching Characteristics
Delay Time td VCC = 3V, VEB = 0.5V, IC = 10mA, − − 35 ns
IB1 = 1mA
Rise Time tr − − 35 ns
Storage Time ts VCC = 3V, IC = 10mA,
2N3905 IB1 = IB2 = 1mA − − 200 ns
2N3906 − − 225 ns
Fall Time tf
2N3905 − − 60 ns
2N3906 − − 75 ns

Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.


.135 (3.45) Min

.210
(5.33)
Max Seating Plane

.500 .021 (.445) Dia Max


(12.7)
Min

E B C

.100 (2.54)

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max


.105 (2.67) Max
.205 (5.2) Max

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