Power Transistors

2SC5993
Silicon NPN epitaxial planar type
Unit: mm
4.6±0.2
For power amplification 9.9±0.3 2.9±0.2

3.0±0.5
For TV VM circuit
φ 3.2±0.1

15.0±0.5
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT)
• Full-pack package which can be installed to the heat sink with one

4.2±0.2
1.4±0.2
2.6±0.1
1.6±0.2
screw.

13.7±0.2

Solder Dip
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0.8±0.1 0.55±0.15

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit 2.54±0.30

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Collector-base voltage (Emitter open) VCBO 180 V
1 2 3 1: Base

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Collector-emitter voltage (Base open) VCEO 180 V 2: Collector

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3: Emitter

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Emitter-base voltage (Collector open) VEBO 6 V
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TO-220D-A1 Package

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Collector current IC 1.5 A

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Internal Connection

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Peak collector current ICP 3 A

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Collector power dissipation PC 20 W C
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Ta = 25°C 2.0
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Junction temperature Tj 150 °C

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Storage temperature Tstg −55 to +150 °C

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■ Electrical Characteristics TC = 25°C ± 3°C

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Parameter Symbol Conditions Min Typ Max Unit

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Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 180 V

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Collector-base cutoff current (Emitter open) ICBO VCB = 180 V, IE = 0 100 µA

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Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA

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Forward current transfer ratio * hFE VCE = 5 V, IC = 0.1 A 60 240 

ma ain

Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 0.1 A 0.5 V

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Transition frequency fT VCE = 10 V, IC = 0.2 A, f = 10 MHz 130 MHz

VCB = 10 V, IE = 0, f = 1 MHz
ed

Collector output capacitance Cob 10 pF

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(Common base, input open circuited)

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Turn-on time ton IC = 0.4 A, Resistance loaded 0.1 µs

Storage time tstg IB1 = 0.04 A, IB2 = − 0.04 A 1.5 µs
Fall time tf VCC = 100 V 0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P
hFE 60 to 140 120 to 240

Publication date: July 2004 SJD00320AED 1

2
Collector power dissipation PC (W)

0
5
10
15
20
25
30
35

0
20
(2)
(1)
2SC5993

40
60
PC  Ta
(1) TC = Ta

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(2) Without heat sink

Ambient temperature Ta (°C)

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80 100 120 140 160

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Collector current IC (A)
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0.01
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1
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Safe operation area

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t = 1 ms
Non repetitive pulse, TC = 25°C

Collector-emitter voltage VCE (V)

t = 10 ms

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tin nc
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yp
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on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
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ed cle
yp cy
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d t ife
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tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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Electric Industrial Co., Ltd.

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