MDD1051– Single N-Channel Trench MOSFET 150V
MDD1051
Single N-channel Trench MOSFET 150V, 28A, 46mΩ
General Description Features
The MDD1051 uses advanced MagnaChip’s MOSFET VDS = 150V
Technology, which provides high performance in on-state
ID = 28A @VGS = 10V
resistance, fast switching performance and excellent
quality. MDD1051 is suitable device for Synchronous RDS(ON)
Rectification For Server and general purpose applications. < 46.0 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 150 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C (Silicon Limited) 28
Continuous Drain Current (1) ID
o
TC=100 C 18 A
Pulsed Drain Current IDM 110
o
TC=25 C 70
Power Dissipation PD W
TC=100oC 28
Single Pulse Avalanche Energy (2) EAS 40.5 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 50 o
C/W
Thermal Resistance, Junction-to-Case RθJC 1.8
June. 2014. Version 1.0 1 MagnaChip Semiconductor Ltd.
MDD1051– Single N-Channel Trench MOSFET 150V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDD1051RH -55~150oC D-PAK Tape & Reel Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 150 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.2 2.2 3.2
Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1.0
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 37.0 46.0 mΩ
Forward Transconductance gfs VDS = 10V, ID = 20A - 30 - S
Dynamic Characteristics
Total Gate Charge Qg - 19.6 -
VDS = 75V, ID = 20A,
Gate-Source Charge Qgs - 5.2 - nC
VGS = 10V
Gate-Drain Charge Qgd - 5.2 -
Input Capacitance Ciss - 1270 -
VDS = 40V, VGS = 0V,
Reverse Transfer Capacitance Crss - 40 - pF
f = 1.0MHz
Output Capacitance Coss - 405 -
Turn-On Delay Time td(on) - 15 -
Rise Time tr VGS = 10V, VDS = 75V, - 10 -
ns
Turn-Off Delay Time td(off) ID = 20A , RG = 3.0Ω - 20 -
Fall Time tf - 5 -
Gate Resistance Rg f=1 MHz - 1.8 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 20A, VGS = 0V - 0.9 1.3 V
Body Diode Reverse Recovery Time trr - 73 ns
IF = 20A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 245 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 9.0A, VGS = 10V.
June. 2014. Version 1.0 2 MagnaChip Semiconductor Ltd.
MDD1051– Single N-Channel Trench MOSFET 150V
Package Dimension
2 Leads, DPAK (TO-252)
Dimensions are in millimeters unless otherwise specified
June. 2014. Version 1.0 3 MagnaChip Semiconductor Ltd.
MDD1051– Single N-Channel Trench MOSFET 150V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
June. 2014. Version 1.0 4 MagnaChip Semiconductor Ltd.
