DG213

Vishay Siliconix

Quad Complementary CMOS Analog Switch

DESCRIPTION FEATURES
The versatile DG213 analog switch has two NC and two NO • ± 22 V supply voltage rating
switches. It can be used in various configurations, including • TTL and CMOS compatible logic Pb-free

Low on-resistance - rDS(on): 45 Ω

Available
four single-pole single-throw (SPST), two single-pole •
double-throw (SPDT), one “T” switch, one DPDT, etc. This • Low leakage - ID(on): 20 pA RoHS*
COMPLIANT
device is fabricated in a Vishay Siliconix’ proprietary high- • Single supply operation possible
voltage silicon gate CMOS process, resulting in lower on- • Extended temperature range
resistance, lower leakage, higher speed, and lower power • Fast switching - tON: 85 ns
consumption.
BENEFITS
This analog switch was designed for a wide variety of • Low charge injection - Q: 1 pC
general purpose applications in telecommunications, • Wide analog signal range
instrumentation, process control, computer peripherals, etc. • Simple logic interface
An improved charge injection compensation design
• Higher accuracy
minimizes switching transients. These switches can handle
• Minimum transients
up to ± 22 V, and have an improved continuous current
rating of 30 mA. An epitaxial layer prevents latchup. • Reduced power consumption
• Low cost
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off APPLICATIONS
condition. • Industrial instrumentation
• Test equipment
For additional information, please refer to Application Note • Communications systems
AN208 (FaxBack document #70606). • Computer peripherals
• Portable instruments
• Sample-and-hold circuits

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

TRUTH TABLE
IN1 1 16 IN2
Logic SW1, SW4 SW2, SW3
D1 2 15 D2
0 OFF ON
S1 3 14 S2 1 ON OFF

V- V+ Logic "0" ≤ 0.8 V

4 13
Logic "1" ≥ 2.4 V
GND 5 12 VL

S4 6 11 S3

D4 7 10 D3

IN4 8 9 IN3

Top View

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70662 www.vishay.com

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Vishay Siliconix

ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
16-Pin Plastic DIP DG213DJ DG213DJ-E3
DG213DY DG213DY-E3
16-Pin Narrow SOIC
- 40 °C to 85 °C DG213DY-T1 DG213DY-T1-E3
DG213DQ DG213DQ-E3
16-Pin TSSOP
DG213DQ-T1 DG213DQ-T1-E3

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Limit Unit
Voltages Referenced V+ to V- 44
GND 25
V
(V-) - 2 to (V+) + 2
Digital Inputsa VS, VD
or 30 mA, whichever occurs first
Current, Any Terminal 30
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 °C
16-Pin Plastic DIPc 470
Power Dissipationb 16-Pin Narrow SOICd 640 mW
d 500
16-Pin TSSOP
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.

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Vishay Siliconix

SPECIFICATIONS
Test Conditions D Suffix
Unless Otherwise Specified - 40 °C to 85 °C
V+ = 15 V, V- = - 15 V, VL = 5 V,
Parameter Symbol VIN = 2.4 V, 0.8 Ve Temp.a Min.c Typ.b Max.c Unit
Analog Switch
Analog Signal Ranged VANALOG Full V- V+ V
Room 45 60
Drain-Source On-Resistance rDS(on)
VD = ± 10 V, IS = 1 mA Full 85 Ω
rDS(on) Match ΔrDS(on) Room 1 2
Room - 0.5 ± 0.01 0.5
Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V
Full -5 5
Room - 0.5 ± 0.01 0.5
Drain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V nA
Full -5 5
Room - 0.5 ± 0.02 0.5
Drain On Leakage Currentf ID(on) VS = VD = 14 V
Full - 10 10
Digital Control
Input Voltage High VINH Full 2.4
V
Input Voltage Low VINL Full 0.8
Input Current IINL or IINH VINH or VINL Full -1 1 µA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Turn-On Time tON VS = 10 V Room 85 130
Turn-Off Time tOFF See Figure 2 Room 55 100 ns
Break-Before-Make Time Delay tD VS = 10 V, See Figure 3 Room 15 25
Charge Injection Q CL = 1000 pF, Vg = 0 V, Rg = 0 Ω Room 1 pC
Source-Off Capacitance CS(off) Room 5
VS = 0 V, f = 1 MHz
Drain-Off Capacitance CD(off) Room 5 pF
Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off-Isolation OIRR CL = 15 pF, RL = 50 Ω Room 90
dB
Channel-to-Channel Crosstalk XTALK VS = 1 VRMS, f = 100 kHz Room 95
Power Supply
Room 1
Positive Supply Current I+
Full 5
VIN = 0 or 5 V
Room -1
Negative Supply Current I- µA
Full -5
Room 1
Logic Supply Current IL
Full 5
Power Supply Range for
VOP Full ±3 ± 22 V
Continuous Operation

Document Number: 70662 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS for Unipolar Supply

Test Conditions D Suffix
Unless Otherwise Specified - 40 °C to 85 °C
V+ = 12 V, V- = 0 V, VL = 5 V,
Parameter Symbol VIN = 2.4 V, 0.8 Ve Temp.a Min.c Typ.b Max.c Unit
Analog Switch
Analog Signal Ranged VANALOG Full V- V+ V
Room 90 110
Drain-Source On-Resistance rDS(on) VD = 3 V, IS = 1 mA Ω
Full 140
Dynamic Characteristics
Turn-On Time tON Room 125 200
See Figure 2
Turn-Off Time tOFF Room 45 100 ns
Break-Before-Make Time Delay tD VS = 8 V, See Figure 3 Room 50 80
Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω Room 4 pC
Power Supply
Room 1
Positive Supply Current I+
Full 5
VIN = 0 or 5 V
Room -1
Negative Supply Current I- µA
Full -5
Room 1
Logic Supply Current IL
Full 5
Power Supply Range for
VOP Full +3 + 40 V
Continuous Operation
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

110 100
V+ = 15 V

r DS(on) - Drain-Source On-Resistance (Ω)

100 90 V- = ± 15 V
r DS(on) - Drain-Source On-Resistance (Ω)

90 80
±5V
80 70

70 60 125 °C

60 ± 10 V 50 85 °C

50 ± 15 V 40 25 °C

40 30 - 55 °C
± 20 V
30 20

20 10

10 0
- 20 - 16 - 12 -8 -4 0 4 8 12 16 20 - 15 - 10 -5 0 5 10 15
VD - Drain V oltage (V) VD - Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature

300 40
V+ = 22 V
V- = 0 V
r DS(on) - Drain-Source On-Resistance (Ω)

5V 30 V- = - 22 V
VL = 5 V TA = 25 °C
250

20
ID(on)
200
IS, I D - Current (pA)

10

150 7V IS(off), ID(off)

0

10 V - 10
100
12 V
- 20
50
- 30

0 - 40
0 2 4 6 8 10 12 - 20 - 15 - 10 -5 0 5 10 15 20
VD - Drain V oltage (V) VANALOG - Analog V oltage (V)
rDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage

1 nA 30
V+ = 15 V
V- = - 15 V
VS, VD = ± 14 V 20

100 pA 10
Q - Charge (pC)
I S,I D - Current

V+ = 15 V
0 V- = - 15 V
IS(off), ID(off) V+ = 12 V
V- = 0 V
10 pA - 10

- 20

1 pA - 30
- 55 - 35 - 15 5 25 45 65 85 105 125 - 15 - 10 -5 0 5 10 15

Temperature (°C) VANALOG - Analog V oltage (V)

Leakage Current vs. Temperature QS, QD - Charge Injection vs. Analog Voltage

Document Number: 70662 www.vishay.com

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Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
120
V+ = + 15 V
110 V- = - 15 V

100

90

OIRR (dB)
RL = 50 Ω
80

70

60

50

40
10 k 100 k 1M 10 M
f - Frequency (Hz)
Off Isolation vs. Frequency

SCHEMATIC DIAGRAM Typical Channel

V+

SX
VL

Level V–
Shift/
Drive V+
INX

DX
GND

V–

Figure 1.

TEST CIRCUITS

+ 15 V

V+ 3V
Logic 50 % tr < 20 ns
S D Input tf < 20 ns
VS = + 2 V VO 0V

IN tOFF
3V RL CL
V- 300 Ω 35 pF
GND 90 %
Switch
VO
Output
- 15 V tON
RL
VO = VS
RL + rDS(on)

Figure 2. Switching Time

www.vishay.com Document Number: 70662

6 S-80263-Rev. G, 11-Feb-08
 DG213
Vishay Siliconix
TEST CIRCUITS

+5V + 15 V
Logic 3V
Input 50 %
VL V+
S1 D1 0V
VS1 VO1 VS1
IN1 VO1
90 %
D2 VO2
S2
VS2
Switch 0V
Output
IN2 VS2
RL1 CL1 VO2 90 %
300 Ω 35 pF
GND V-
RL2 CL2 Switch 0V
300 Ω 35 pF tD tD
Output
- 15 V

CL (includes fixture and stray capacitance)

Figure 3. Break-Before-Make

C + 15 V

+ 15 V
V+
C VS S1 D1
Rg = 50 Ω
50 Ω
V+ IN1
VS S D VO
0 V, 2.4 V
Rg = 50 Ω S2 D2 VO
RL NC
IN
0 V, 2.4 V RL
IN2
0 V, 2.4 V
GND V- C
GND V- C
C = RF bypass
VS
- 15 V XTA LK Isolation = 20 log
VS VO - 15 V
Off Isolation = 20 log
VO

Figure 4. Off Isolation Figure 5. Channel-to-Channel Crosstalk

+ 15 V ΔVO
VO
V+
Rg
S D
VO

Vg IN CL INX ON OFF ON
3V 1000 pF
GND V-
ΔVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x ΔVO
- 15 V

Figure 6. Charge Injection

Document Number: 70662 www.vishay.com

S-80263-Rev. G, 11-Feb-08 7
DG213
Vishay Siliconix
APPLICATIONS

+ 15 V +5V + 15 V

VIN1
VOUT

VIN2
CMOS Logic - 15 V
Input Select
High = V IN1
Low = V IN2

CMOS Logic
Gain Select
High = 10x
Low = 1 x

10x 1x DG213

GND

20 kΩ 180 kΩ - 15 V

Figure 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70662.

www.vishay.com Document Number: 70662

8 S-80263-Rev. G, 11-Feb-08
 Package Information
Vishay Siliconix

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES
Dim Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.38 0.51 0.015 0.020
C 0.18 0.23 0.007 0.009
D 9.80 10.00 0.385 0.393
E 3.80 4.00 0.149 0.157
16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC

E H 5.80 6.20 0.228 0.244

L 0.50 0.93 0.020 0.037
1 2 3 4 5 6 7 8
Ĭ 0_ 8_ 0_ 8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300

D H
C

All Leads
0.101 mm
A1 Ĭ
e B L
0.004 IN

Document Number: 71194 www.vishay.com

02-Jul-01 1
 Package Information
Vishay Siliconix

PDIP: 16ĆLEAD

16 15 14 13 12 11 10 9

E1 E

1 2 3 4 5 6 7 8

D
S
Q1

A1 L

15°
C MAX
B1 e1 B eA

MILLIMETERS INCHES
Dim Min Max Min Max
A 3.81 5.08 0.150 0.200
A1 0.38 1.27 0.015 0.050
B 0.38 0.51 0.015 0.020
B1 0.89 1.65 0.035 0.065
C 0.20 0.30 0.008 0.012
D 18.93 21.33 0.745 0.840
E 7.62 8.26 0.300 0.325
E1 5.59 7.11 0.220 0.280
e1 2.29 2.79 0.090 0.110
eA 7.37 7.87 0.290 0.310
L 2.79 3.81 0.110 0.150
Q1 1.27 2.03 0.050 0.080
S 0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482

Document Number: 71261 www.vishay.com

06-Jul-01 1
 Package Information
Vishay Siliconix

TSSOP: 16-LEAD

DIMENSIONS IN MILLIMETERS
Symbols Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e - 0.65 -
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y - - 0.10
θ1 0° 3° 6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624

Document Number: 74417 www.vishay.com

23-Oct-06 1
 PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16

0.193
(4.90)

0.055
(1.40)
0.281

0.171
(7.15)

(4.35)
0.014 0.026 0.012
(0.35) (0.65) (0.30)

Recommended Minimum Pads

Dimensions in inches (mm)

Revision: 02-Sep-11 1 Document Number: 63550

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-16

RECOMMENDED MINIMUM PADS FOR SO-16

0.372
(9.449)

0.047
(1.194)
(6.248)

(3.861)
0.246

0.152
0.022 0.050 0.028
(0.559) (1.270) (0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000