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MBRS360T3 D (b36)

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0% found this document useful (0 votes)
74 views8 pages

MBRS360T3 D (b36)

Uploaded by

SIBTEK GROUP
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Surface Mount

Schottky Power Rectifier

MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G, www.onsemi.com

NRVBS360BNT3 SCHOTTKY BARRIER


This device employs the Schottky Barrier principle in a large area RECTIFIERS
metal−to−silicon power diode. State−of−the−art geometry features 3.0 AMPERES, 60 VOLTS
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
SMC 2−LEAD SMB
Features CASE 403AC CASE 403A−03
• Small Compact Surface Mountable Package with J−Bend Leads
MARKING DIAGRAMS
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction AYWW AYWW
• Excellent Ability to Withstand Reverse Avalanche Energy Transients B36G B36G
G G
• Guard−Ring for Stress Protection
• NRVBS Prefix for Automotive and Other Applications Requiring B36 = Specific Device Code
Unique Site and Control Change Requirements; AEC−Q101 A = Assembly Location**
Qualified and PPAP Capable* Y = Year
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS WW = Work Week
G = Pb−Free Package
Compliant (Note: Microdot may be in either location)

Mechanical Characteristics **The Assembly Location code (A) is front side


• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
• Weight: 217 mg (Approximately), SMC may be blank.
95 mg (Approximately), SMB
• Finish: All External Surfaces Corrosion Resistant and Terminal ORDERING INFORMATION
Leads are Readily Solderable
Device Package Shipping†
• Lead and Mounting Surface Temperature for Soldering Purposes:
MBRS360T3G SMC 2,500 /
260°C Max. for 10 Seconds (Pb−Free) Tape & Reel
• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead MBRS360BT3G SMB 2,500 /
• Device Meets MSL 1 Requirements (Pb−Free) Tape & Reel
• ESD Ratings: NRVBS360T3G* SMC 2,500 /
♦ Machine Model, C (Pb−Free) Tape & Reel
♦ Human Body Model, 3B NRVBS360BT3G* SMB 2,500 /
(Pb−Free) Tape & Reel
NRVBS360BT3G SMB 2,500 /
−VF01* (Pb−Free) Tape & Reel

NRVBS360BNT3G* SMB 2,500 /


(Pb−Free) Tape & Reel

†For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:


March, 2020 − Rev. 14 MBRS360T3/D
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 60 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C A
4.0 @ TL = 127°C

Nonrepetitive Peak Surge Current IFSM A


(Surge applied at rated load conditions halfwave, single phase, 60 Hz) 125

Storage Temperature Range Tstg − 65 to +175 °C


Operating Junction Temperature (Note 1) TJ − 65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2) RqJL °C/W
SMC Package 11
SMB Package 15
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA °C/W
SMC Package 136
SMB Package 145
Thermal Resistance, Junction−to−Ambient (Note 3) RqJA °C/W
SMC Package 71
SMB Package (Note 4) 73

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 5) VF V
(iF = 3.0 A, TJ = 25°C) 0.63

Maximum Instantaneous Reverse Current (Note 5) iR mA


(Rated dc Voltage, TJ = 25°C) 0.03
(Rated dc Voltage, TJ = 100°C) 3.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

www.onsemi.com
2
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3

TYPICAL ELECTRICAL CHARACTERISTICS

10 10
IF, INSTANTANEOUS FORWARD

IF, INSTANTANEOUS FORWARD


TJ = 150°C
TJ = 175°C
TJ = 175°C
CURRENT (A)

CURRENT (A)
1
TJ = 100°C TJ = 150°C
TJ = 25°C TJ = 25°C

0.1 0.1 TJ = 100°C

TJ = −40°C TJ = −40°C

0.01 0.01
0.0 0.2 0.4 0.6 0.8 0.0 0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1.0E+00
IR, INSTANTANEOUS REVERSE

1.0E−01 TJ = 175°C

1.0E−02
TJ = 150°C
CURRENT (A)

1.0E−03 TJ = 100°C

1.0E−04

1.0E−05
TJ = 25°C
1.0E−06

1.0E−07
0 10 20 30 40 50 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
1.0E+00
IR, INSTANTANEOUS REVERSE

1.0E−01 TJ = 175°C

1.0E−02 TJ = 150°C
CURRENT (A)

TJ = 100°C
1.0E−03

1.0E−04
TJ = 25°C
1.0E−05

1.0E−06
0 10 20 30 40 50 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current

www.onsemi.com
3
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3

IF(AV), AVERAGE FORWARD CURRENT (A) 5 4

PFO, AVERAGE POWER DISSIPATION (W)


TJ = 175°C SQUARE
dc 3.5 WAVE
4
3
SQUARE WAVE dc
3 2.5

2
2
1.5

1
1
0.5
RqJL = 15°C/W
0 0
0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation

1000
TJ = 25°C
C, CAPACITANCE (pF)

100

10
0 10 20 30 40 50 60 70
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance

www.onsemi.com
4
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3

100
r(t), TRANSIENT THERMAL RESPONSE
D = 0.5

0.2
10
0.1

0.05 P(pk)

1
Test Type > min pad 1 oz
0.01 t1 RqJC = min pad 1 oz C/W
t2
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)

Figure 8. Thermal Response, Junction−to−Ambient, SMC Package

100
50% Duty Cycle
20%
10 10%
5%
R(t) (°C/W)

2%
1 P(pk)
1%
Test Type > min pad 1 oz
t1 RqJC = min pad 1 oz C/W
0.1
t2
Single Pulse DUTY CYCLE, D = t1/t2
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (s)

Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package

www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SMB
CASE 403A−03
ISSUE J
SCALE 1:1 SCALE 1:1 DATE 19 JUL 2012
Polarity Band Non−Polarity Band

HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.95 2.30 2.47 0.077 0.091 0.097
b D A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.96 2.03 2.20 0.077 0.080 0.087
c 0.15 0.23 0.31 0.006 0.009 0.012
D 3.30 3.56 3.95 0.130 0.140 0.156
E 4.06 4.32 4.60 0.160 0.170 0.181
POLARITY INDICATOR HE 5.21 5.44 5.60 0.205 0.214 0.220
OPTIONAL AS NEEDED
L 0.76 1.02 1.60 0.030 0.040 0.063
L1 0.51 REF 0.020 REF

A GENERIC
MARKING DIAGRAM*

A1
L L1 c
AYWW AYWW
XXXXXG XXXXXG
G G
SOLDERING FOOTPRINT*
Polarity Band Non−Polarity Band
2.261
0.089 XXXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2.743
(Note: Microdot may be in either location)
0.108
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
2.159 may or may not be present.
0.085 SCALE 8:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42669B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SMB PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com


MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SMC 2−LEAD
CASE 403AC
ISSUE B
DATE 27 JUL 2017
SCALE 1:1

NOTES:
HE 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
MILLIMETERS INCHES
D DIM MIN MAX MIN MAX
A 1.95 2.61 0.077 0.103
A1 c A1 0.05 0.20 0.002 0.008
A2 1.90 2.41 0.075 0.095
DETAIL A
b 2.90 3.20 0.114 0.126
TOP VIEW c 0.15 0.41 0.006 0.016
D 5.55 6.25 0.219 0.246
DETAIL A E 6.60 7.15 0.260 0.281
HE 7.75 8.15 0.305 0.321
A2 A
L 0.75 1.60 0.030 0.063

GENERIC
L b MARKING DIAGRAM*
SIDE VIEW END VIEW
AYWW
RECOMMENDED XXXXG
SOLDERING FOOTPRINT* G
8.750
0.344 XXXX = Specific Device Code
A = Assembly Location
Y = Year
3.790 WW = Work Week
2X
0.149 G = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
2X
2.250 ǒinches
mm Ǔ
SCALE 4:1 device data sheet for actual part marking.
0.089 Pb−Free indicator, “G” or microdot “ G”,
*For additional information on our Pb−Free strategy and soldering may or may not be present.
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON97675F Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SMC 2−LEAD PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com


onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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