Freescale Semiconductor Document Number: MRF9030

Technical Data Rev. 8, 9/2008

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
MRF9030LR1

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5% 945 MHz, 30 W, 26 V
IMD — - 32.5 dBc LATERAL N - CHANNEL
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW BROADBAND
Output Power RF POWER MOSFET

Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360B - 05, STYLE 1
NI - 360

Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain - Source Voltage VDSS - 0.5, +68 Vdc
Gate - Source Voltage VGS - 0.5, + 15 Vdc
Total Device Dissipation @ TC = 25°C PD 92 W
Derate above 25°C 0.53 W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.9 °C/W

Table 3. ESD Protection Characteristics

Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)

© Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9030LR1

RF Device Data
Freescale Semiconductor 1
 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current IGSS — — 1 μAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 2 2.9 4 Vdc
(VDS = 10 Vdc, ID = 100 μAdc)
Gate Quiescent Voltage VGS(Q) — 3.8 — Vdc
(VDS = 26 Vdc, ID = 250 mAdc)
Drain - Source On - Voltage VDS(on) — 0.19 0.4 Vdc
(VGS = 10 Vdc, ID = 0.7 Adc)
Forward Transconductance gfs — 3 — S
(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics
Input Capacitance Ciss — 49.5 — pF
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss — 26.5 — pF
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance Crss — 1 — pF
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
(continued)

MRF9030LR1
RF Device Data
2 Freescale Semiconductor
 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain Gps 18 19 — dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

Two - Tone Drain Efficiency η 37 41.5 — %

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion IMD — - 32.5 - 28 dBc
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss IRL — - 15.5 -9 dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Common - Source Amplifier Power Gain Gps — 19 — dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency η — 41.5 — %
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion IMD — - 33 — dBc
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss IRL — - 14 — dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point P1dB — 30 — W
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
Common - Source Amplifier Power Gain Gps — 19 — dB
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
Drain Efficiency η — 60 — %
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)

MRF9030LR1
RF Device Data
Freescale Semiconductor 3
 B2
B1 VDD
VGG

+ + + +
C7 C8 C14 C15 C16 C17

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

C5 C9 L2
L1
RF
RF
DUT OUTPUT
INPUT Z8 Z9 Z10 Z11 Z12 Z13
Z1 Z2 Z3 Z4 Z5 Z6 Z7
C13
C1

C2 C3 C4 C6 C10 C11 C12

B1 Short Ferrite Bead Z3 0.500″ x 0.100″ Microstrip

B2 Long Ferrite Bead Z4 0.215″ x 0.270″ Microstrip
C1, C8, C13, C14 47 pF Chip Capacitors Z5 0.315″ x 0.270″ Microstrip
C2, C4 0.8 pF to 8.0 pF Trim Capacitors Z6 0.160″ x 0.270″ x 0.520″, Taper
C3 3.9 pF Chip Capacitor Z7 0.285″ x 0.520″ Microstrip
C5, C6 7.5 pF Chip Capacitors Z8 0.450″ x 0.270″ Microstrip
C7, C15, C16 10 μF, 35 V Tantalum Capacitors Z9 0.140″ x 0.270″ Microstrip
C9, C10 10 pF Chip Capacitors Z10 0.250″ x 0.060″ Microstrip
C11 9.1 pF Chip Capacitor Z11 0.720″ x 0.060″ Microstrip
C12 0.6 pF to 4.5 pF Trim Capacitor Z12 0.490″ x 0.060″ Microstrip
C17 220 μF, 50 V Electrolytic Capacitor Z13 0.290″ x 0.060″ Microstrip
L1, L2 12.5 nH Surface Mount Inductors PCB Taconic RF - 35 - 0300, 30 mil,
Z1 0.260″ x 0.060″ Microstrip εr = 3.55
Z2 0.240″ x 0.060″ Microstrip

Figure 1. 945 MHz Broadband Test Circuit Schematic

C7 C17

VDD
VGG
C8
C14
C9 C15 C16
L1 C5 L2
RF INPUT C1 C13 RF OUTPUT
C2
C3 C4 C6 C10
C11
CUT OUT AREA

C12

MRF9030
900 MHz
Rev−02

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 2. 945 MHz Broadband Test Circuit Component Layout

MRF9030LR1
RF Device Data
4 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

20 50

IMD, INTERMODULATION DISTORTION (dBc)

Gps
19 45
η
18 40

η, DRAIN EFFICIENCY (%)

G ps , POWER GAIN (dB)
VDD = 26 Vdc

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

17 35

IRL, INPUT RETURN LOSS (dB)

Pout = 30 W (PEP)
IDQ = 250 mA
16 −30 −10
Two−Tone, 100 kHz Tone Spacing
IMD
15 −32 −12

14 IRL −34 −14

13 −36 −16

12 −38 −18
930 935 940 945 950 955 960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance

20

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc
IDQ = 375 mA −20 f1 = 945 MHz, f2 = 945.1 MHz
19.5
G ps , POWER GAIN (dB)

19 300 mA −30
IDQ = 200 mA
18.5 250 mA
−40
200 mA
300 mA 250 mA
18
−50
17.5 375 mA
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz −60
17
1 10 100 1 10 100
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus
Output Power

0 22 60
IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc VDD = 26 Vdc

−10 IDQ = 250 mA 20 IDQ = 250 mA 50
f1 = 945 MHz, f2 = 945.1 MHz f = 945 MHz Gps

η, DRAIN EFFICIENCY (%)

G ps , POWER GAIN (dB)

−20
18 40
−30
16 30
3rd Order
−40
14 η 20
−50
5th Order
12 10
−60
7th Order 10 0
−70
1 10 100 0.1 1 10 100
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG.

Figure 6. Intermodulation Distortion Products Figure 7. Power Gain and Efficiency versus
versus Output Power Output Power

MRF9030LR1
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

20 60

IMD, INTERMODULATION DISTORTION (dBc)

Gps
18 40

G ps , POWER GAIN (dB)

η, DRAIN EFFICIENCY (%)

16 20

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

η VDD = 26 Vdc
IDQ = 250 mA
14 0
f1 = 945 MHz, f2 = 945.1 MHz

12 −20

10 IMD −40

8 −60
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power

1010
MTTF FACTOR (HOURS X AMPS2)

109

108

107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.

Figure 9. MTTF Factor versus Junction Temperature

MRF9030LR1
RF Device Data
6 Freescale Semiconductor
 NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN

Zo = 5 Ω
Zsource
Zload
f = 930 MHz f = 930 MHz

f = 960 MHz
f = 960 MHz

VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP

f Zsource Zload
MHz Ω Ω

930 1.34 - j0.1 3.175 + j0.09

945 1.36 - j0.2 3.1 + j0.08

960 1.4 - j0.14 3.0 + j0.05

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input Device Output

Matching Under Test Matching
Network Network

Z Z
source load

Figure 10. Series Equivalent Source and Load Impedance

MRF9030LR1
RF Device Data
Freescale Semiconductor 7
 PACKAGE DIMENSIONS

2X Q
B G aaa M T A M B M NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
1 PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

INCHES MILLIMETERS
B DIM MIN MAX MIN MAX
(FLANGE) 2
A 0.795 0.805 20.19 20.45
2X K
2XD B
C
0.225
0.125
0.235
0.175
5.72
3.18
5.97
4.45
bbb M T A M B M R D 0.210 0.220 5.33 5.59
(LID) E 0.055 0.065 1.40 1.65
F 0.004 0.006 0.10 0.15
ccc M T A M B M G 0.562 BSC 14.28 BSC
H 0.077 0.087 1.96 2.21
F K 0.220 0.250 5.59 6.35
N ccc M T A M B M H M 0.355 0.365 9.02 9.27
(LID) N 0.357 0.363 9.07 9.22
E C Q 0.125 0.135 3.18 3.43
R 0.227 0.233 5.77 5.92
S 0.225 0.235 5.72 5.97
S aaa 0.005 REF 0.13 REF
(INSULATOR) bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
SEATING aaa M T A M B M
T PLANE STYLE 1:
PIN 1. DRAIN
M bbb M T A M B M 2. GATE
(INSULATOR) 3. SOURCE

A A

CASE 360B - 05
ISSUE G
NI - 360
MRF9030LR1

MRF9030LR1
RF Device Data
8 Freescale Semiconductor
 PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

8 Sept. 2008 • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Added Product Documentation and Revision History, p. 9

MRF9030LR1
RF Device Data
Freescale Semiconductor 9
 NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN

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MRF9030LR1
Document Number: MRF9030 RF Device Data
Rev. 8, 9/2008
10 Freescale Semiconductor