P062ABDD

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

25V 5.8mΩ @VGS = 10V 83A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 25
V
Gate-Source Voltage VGS ±20
TC= 25 °C 83
Continuous Drain Current2 ID
TC= 100 °C 53
1
A
Pulsed Drain Current IDM 180
Avalanche Current IAS 40
Avalanche Energy L=0.1mH EAS 80 mJ
TC= 25 °C 69
Power Dissipation PD W
TC= 100°C 27
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICA MAXIMUM UNITS
Junction-to-Case RqJC L 2.55 °C / W
1
Pulse width limited by maximum junction temperature.
2
Package limitation current is 60A.

REV 1.0 1 2014/4/29

P062ABDD
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.5 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS =20V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS =20V, VGS = 0V, TJ = 125°C 10
Drain-Source On-State VGS =4.5V, ID =20A 6.7 9.8
RDS(ON) mΩ
Resistance1 VGS =10V, ID =20A 3.9 5.8
Forward Transconductance1 gfs VDS =15V, ID =20A 43 S
DYNAMIC
Input Capacitance Ciss 1460
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 308 pF
Reverse Transfer Capacitance Crss 248
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω
VGS = 10V 34
Total Gate Charge2 Qg
VGS = 4.5V VDS = 0.5V(BR)DSS, 18
nC
Gate-Source Charge 2 Qgs ID = 20A 6
Gate-Drain Charge2 Qgd 10
2 td(on)
Turn-On Delay Time 15
2 VDS = 15V ,
Rise Time tr 129
2
ID≌1A, VGS = 10V, RGEN =6Ω nS
Turn-Off Delay Time td(off) 174
Fall Time2 tf 191
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3 IS 83 A
1 VSD IF = 20A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 21 nS
IF = 20A, dlF/dt = 100A / ms
Reverse Recovery Charge Qrr 7.5 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 60A.

REV 1.0 2 2014/4/29

P062ABDD
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014/4/29

P062ABDD
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014/4/29

P062ABDD
N-Channel Enhancement Mode MOSFET

*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

REV 1.0 5 2014/4/29