ST 2SC3202
NPN Silicon Epitaxial Planar Transistor
for switching and general purpose applications.
The transistor is subdivided into two groups, O and Y
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Symbol Value Unit
Collector Base Voltage VCBO 35 V
Collector Emitter Voltage VCEO 30 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 500 mA
Emitter Current IE -500 mA
Power Dissipation Ptot 625 mW
O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C
G S P FORM A IS AVAILABLE
Тел.: (495) 795-0805
Факс: (495) 234-1603
РАДИОТЕХ Эл. почта: info@rct.ru
Веб: www.rct.ru
®
ST 2SC3202
Characteristics at Tamb=25 OC
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group
O hFE 70 - 140 -
Y hFE 120 - 240 -
at VCE=6V, IC=400mA O hFE 25 - -- --
Y hFE 40 - -
Collector Cutoff Current
at VCB=35V ICBO - - 0.1 µA
Emitter Cutoff Current
at VEB=5V IEBO - - 0.1 µA
Collector Emitter Saturation Voltage
at IC=100mA, IB=10mA VCE(sat) - 0.1 0.25 V
Base Emitter Voltage
at VCE=1V, IC=100mA VBE - 0.8 1 V
Transition Frequency
at VCE=6V, IC=20mA fT - 300 - MHz
Collector Output Capacitance
at VCB=6V, f=1MHz COB - 7.0 - pF
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
