TLP137

TOSHIBA Photocoupler GaAs IRed & Photo−Transistor

TLP137
Office Machine
Unit in mm
Programmable Controllers
AC / DC−Input Module
Telecommunication

The TOSHIBA mini flat coupler TLP137 is a small outline coupler,

suitable for surface mount assembly.
TLP137 consists of a gallium arsenide infrared emitting diode, optically
coupled to a photo transistor, and provides high CTR at low input
current.
TLP137 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.

l Collector−emitter voltage: 80V(min.)

l Current transfer ratio: 100%(min.)
Rank BV: 200%(min.)
l Isolation voltage: 3750Vrms(min.)
l UL recognized: UL1577, file No. E67349 TOSHIBA 11−4C2
l Current transfer ratio
Weight: 0.09 g

Current Transfer Ratio (min.) Marking Pin Configurations (top view)

Classi- Ta = 25°C Ta =-25~75°C Of
fication IF = 1mA IF = 0.5mA IF = 1mA Classi-
VCE = 0.5V VCE = 1.5V VCE = 0.5V fication
Rank BV 200% 100% 100% BV

Standard 100% 50% 50% BV, Blank 1 6

(Note) Application type name for certification test,
please use standard product type name, i.e. 5
TLP137 (BV): TLP137

3 4

1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base

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 TLP137
Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA
Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C
LED

Peak forward current (100µs pulse, 100pps) IFP 1 A

Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80 V

Emitter-collector voltage VECO 7 V

Emitter-base voltage VEBO 7 V

Detector

Collector current IC 50 mA

Peak collector current (10ms pulse, 100pps) ICP 100 mA

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C

Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BVS 3750 Vrms

(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.

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 TLP137
Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5V ― ― 10 µA
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Collector-emitter
V(BR)CEO IC = 0.5mA 80 ― ― V
breakdown voltage
Emitter-collector
V(BR)ECO IE = 0.1mA 7 ― ― V
breakdown voltage
Collector-base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V

Emitter-base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V

Detector

VCE = 48V ― 10 100 nA

Collector dark current ICEO
VCE = 48V, Ta = 85°C ― 2 50 µA
VCE = 48V, Ta = 85°C
Collector dark current ICER ― 0.5 10 µA
RBE = 1MΩ

Collector dark current ICBO VCB = 10V ― 0.1 ― nA

DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 1000 ― ―

Capacitance (collector to emitter) CCE V= 0, f = 1MHz ― 12 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 1mA, VCE = 0.5V 100 ― 1200

Current transfer ratio IC / IF %
Rank BV 200 ― 1200
IF = 0.5mA, VCE = 1.5V 50 ― ―
Low input CTR IC / IF(low) %
Rank BV 100 ― ―
Base photo-current IPB IF = 1mA, VCB = 5V ― 5 ― µA
IC = 0.5mA, IF = 1mA ― ― 0.4
Collector-emitter
VCE(sat) IC = 1mA, IF = 1mA ― 0.2 ― V
saturation voltage
Rank BV ― ― 0.4
Off-state collector current IC(off) V F = 0.7V, VCE = 48V ― ― 10 µA

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 TLP137
Coupled Electrical Characteristics (Ta = -25~75°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 1mA, VCE = 0.5V 50 ― ―

Current transfer ratio IC / IF %
Rank BV 100 ― ―
IF = 0.5mA, VCE = 1.5V ― 50 ―
Low input CTR IC / IF(low) %
Rank BV ― 100 ―

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF

10 14
Isolation resistance RS V = 500V 5´10 10 ― Ω
AC, 1minute 3750 ― ―
Vrms
Isolation voltage BVS AC, 1second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 8 ―
Fall time tf VCC = 10V, IC = 2mA ― 8 ―
µs
Turn-on time ton RL = 100Ω ― 10 ―
Turn-off time toff ― 8 ―
Turn-on time tON ― 10 ―
RL = 4.7 kΩ (Fig.1)
Storage time tS RBE = OPEN ― 50 ― µs
VCC = 5 V, IF = 1.6mA
Turn-off time tOFF ― 300 ―
Turn-on time tON ― 12 ―
RL = 4.7kΩ (Fig.1)
Storage time tS RBE = 470kΩ ― 30 ― µs
VCC = 5 V, IF = 1.6mA
Turn-off time tOFF ― 100 ―

Fig. 1 Switching time test circuit

IF
IF VCC
RL tS
VCC
VCE VCE 4.5V
RBE 0.5V
tON tOFF

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 TLP137

IF – Ta PC – Ta
100 200

80 160
Allowable forward current

Allowable collector power

dissipation PC (mw)
IF (mA)

60 120

40 80

20 40

0 0
－20 0 20 40 60 80 100 120 －20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – VF
3000 100
PULSE WIDTH ≦ 100 ms Ta = 25°C
Ta = 25°C 50
30
IF (mA)

1000
Pulse forward current

500 10
IFP (mA)

300
5
Forward current

3
100
1
50
0.5
30
0.3

10 0.1
3 10－3 3 10－2 3 10－1 3 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Duty cycle ratio DR Forward voltage VF (V)

⊿ VF / ⊿Ta － IF IFP – VFP

－3.2 1000
Forward voltage temperature coefficient

(mA)

500
－2.8
300
⊿VF / ⊿Ta(mV /ﾟ C)

IFP

－2.4
100
Pulse forward current

－2.0 50

30
－1.6

10
－1.2
Pulse width ≦ 10 ms
5
Repetitive frequency
－0.8 3 = 100 Hz
Ta = 25°C
－0.4 1
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6 3.0

Forward current IF (mA) Pulse forward voltage VFP (V)

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 TLP137

IC – VCE IC – VCE
4 4
Ta = 25°C Ta = 25°C
IF = 1.0mA

IF = 1.0mA
(mA)

(mA)
3 3

0.8mA
IC

IC
0.8mA
Collector Current

Collector current
2 2
0.6mA
0.6mA

0.5mA
0.5mA
1 1
0.4mA 0.4mA

0.2mA 0.2mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0

Collector-emitter voltage VCE(V) Collector-emitter voltage VCE (V)

IC – IF IC / IF – IF
50 1000
30 Ta = 25°C
Current transfer ratio IC / IF (%)
Collector current IC (mA)

10 500
Sample A
5
300
3
Sample A

Sample B
1
Ta = 25°C
0.5
VCE = 5V 100
0.3 VCE = 5V
VCE = 1.5V
VCE = 1.5V
Sample B VCE = 0.5V
0.1 50 VCE = 0.5V

0.05
0.03 30
0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10

Forward current IF (mA) Forward current IF (mA)

IC – IF at RBE IPB – IF
30 300
Ta=25°C Ta=25°C
(μA)

VCE=5V 100
IC (mA)

10
VCC
IF 30 IF VCB
5
IPB

A
3 VCB=0V
10
Base photo current
Collector current

A VCB=5V
RBE
RBE

1 3

0.5 1

0.3 RBE=∞ 500kΩ 100kΩ 50kΩ

0.3

0.1 0.1
0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10

Forward current IF (mA) Forward current IF (mA)

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 TLP137

ICEO – Ta VCE(sat) – Ta
1
10 0.16
IF = 1mA
IC = 0.5mA
0.14

Collector -emitter saturation voltage

0.12
100
(μA)

0.10
VCE=48V 24V

VCE (sat) (V)

(ICEO)

10V 0.08

-1
ID

10
0.06
Collector dark current

5V
0.04

10-2 0.02

0
－40 －20 0 20 40 60 80 100

10-3 Ambient temperature Ta (°C)

10-4
0 20 40 60 80 100 120

Ambient temperature Ta (°C)

IC – Ta Switching Time – RL
300
30
VCE=1.5V
tOFF
VCE=0.5V
Collector current IC (mA)

IF = 2mA
10
Switching time (µs)

100

5 tS
1mA 50
3
30

0.5mA
tON
1
10
0.5

0.3 0.2mA 5

Ta = 25°C
3
IF=1.6mA
0.1 VCC=5V
RBE=470kΩ
0.05 1
－20 0 20 40 60 80 100 1 3 5 10 30 50 100

Ambient temperature Ta (°C) Load resistance RL (kΩ)

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 TLP137

Switching Time – RBE Switching Time – RL

1000 5000
Ta = 25°C Ta = 25°C
IF=1.6mA 3000 IF=1.6mA
500
VCC=5V tOFF VCC=5V tOFF
300 RL=4.7kΩ
Switching time (µs)

Swithing time (µs)

1000

100 tS 500
N 300
50 tS

N
30
100
tON

10 50

30
5

3 tON
10

1 ５

1 3 5 10 30 50 100
100k 300k 1M 3M ∞

Base-emitter resistance RBE (Ω) Load resistance RL (kΩ)

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 TLP137

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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