NIKO-SEM N-Channel Enhancement Mode Field PK506BA

Effect Transistor PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID D
D D D D
30V 5mΩ 64A

G
G. GATE
D. DRAIN
S. SOURCE
S #1 S S S G

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 64
Continuous Drain Current3 ID
TC = 100 °C 51
Pulsed Drain Current1 IDM 160
TA = 25 °C 16
Continuous Drain Current ID A
TA = 70 °C 13
Avalanche Current IAS 35
Avalanche Energy L = 0.1mH EAS 63 mJ
TC = 25 °C 35
Power Dissipation PD W
TC = 100 °C 14
TA = 25 °C 2.2
Power Dissipation PD W
TA = 70 °C 1.4
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient Steady-State RJA 55
°C / W
Junction-to-Case Steady-State RJC 3.5
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3
Package limitation current is 35A.

REV 0.9 Feb-29-2012

1
NIKO-SEM N-Channel Enhancement Mode Field PK506BA
Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.5 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 20V, VGS = 0V, TJ = 55 °C 10

Drain-Source On-State VGS =4.5V, ID = 20A 5.1 6.2

RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 20A 4.2 5
Forward Transconductance1 gfs VDS = 5V, ID = 20A 62 S
DYNAMIC
Input Capacitance Ciss 1669
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 212 pF

Reverse Transfer Capacitance Crss 158

Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω
VGS = 10V 36
Total Gate Charge2 Qg VDS = 15V , VGS = 10V,
VGS = 4.5V 18.4
ID = 20A
Gate-Source Charge2 Qgs 5 nC
2
Gate-Drain Charge Qgd 8
2
Turn-On Delay Time td(on) 26
VDS = 15V ,
2
Rise Time tr 18
ID  20A, VGS = 10V, RGEN =6Ω nS
2
Turn-Off Delay Time td(off) 40
Fall Time2 tf 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3 IS 64 A
Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V
Reverse Recovery Time trr 27 nS
IF = 20A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 13.2 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 35A.

REV 0.9 Feb-29-2012

2
NIKO-SEM N-Channel Enhancement Mode Field PK506BA
Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

REV 0.9 Feb-29-2012

3
NIKO-SEM N-Channel Enhancement Mode Field PK506BA
Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

REV 0.9 Feb-29-2012

4